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    DIODE A46 Search Results

    DIODE A46 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE A46 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    DIODE A46

    Abstract: A47 diode skkh570 4092 thyristor skkt 90 A76A semipack skkh 106 SKKD380 A36 diode semipack skkt 330
    Text: 1996-2012:QuarkCatalogTempNew 9/20/12 3:44 PM Page 1996 INTERCONNECT TEST & MEASUREMENT 25 SEMIPACK Isolated Diode/Diode and Thyristor/Diode Modules SEMIPACK® Isolated Diode/Diode and Single Diode Modules 27 Amp to 700 Amp RoHS SKKD 46/16 Stock No. Mfr.’s


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    zener diode A36

    Abstract: zener diode A29 ZENER A29 a37 zener diode ZENER A26 a36 zener ZENER A34 CAZ23C24 a59 zener diode ZENER A26
    Text: Silicon-Based Technology Corp. Small-Signal Zener Diodes CAZ23C2V7 CAZ23C51 „ Features and Advantages: z Surface mount package for automatic assembly process z High precision Zener voltage VZ (Note3.) z Small Zener diode dynamic impedance(ZZT) z Low standby reverse current(VR) (Note4.)


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    CAZ23C2V7 CAZ23C51 OT-23 MIL-STD-202, J-STD-020C CAZ23CXVX zener diode A36 zener diode A29 ZENER A29 a37 zener diode ZENER A26 a36 zener ZENER A34 CAZ23C24 a59 zener diode ZENER A26 PDF

    zener diode A29

    Abstract: ZENER A29 a37 zener a23 zener zener diode A36 diode ZENER A26 A26 zener a36 zener marking codes A32 a59 zener diode
    Text: Silicon-Based Technology Corp. Small-Signal Zener Diodes CAZ59C2V7 CAZ59C51 „ Features and Advantages: z Surface mount package for automatic assembly process z High precision Zener voltage VZ (Note3.) z Small Zener diode dynamic impedance(ZZT) z Low standby reverse current(VR) (Note4.)


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    CAZ59C2V7 CAZ59C51 SC-59 MIL-STD-202, J-STD-020C CAZ59CXVX zener diode A29 ZENER A29 a37 zener a23 zener zener diode A36 diode ZENER A26 A26 zener a36 zener marking codes A32 a59 zener diode PDF

    SCHOTTKY 20A 40V

    Abstract: a465
    Text: YG805C04R 40V / 20A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 1.2±0.2 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 Low VF Super high speed switching. High reliability by planer design. 0.6 2.54±0.2 2.7±0.2


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    YG805C04R O-22OF15) 13Min SC-67 SCHOTTKY 20A 40V a465 PDF

    yg805c06

    Abstract: YG805C06R IO120
    Text: YG805C06R 60V / 20A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 1.2±0.2 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 Low VF Super high speed switching. High reliability by planer design. 0.6 2.54±0.2 2.7±0.2


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    YG805C06R O-22OF15) 13Min SC-67 yg805c06 YG805C06R IO120 PDF

    Untitled

    Abstract: No abstract text available
    Text: YG805C06R 60V / 20A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 1.2±0.2 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 Low VF Super high speed switching. High reliability by planer design. 0.6 2.54±0.2 2.7±0.2


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    YG805C06R O-22OF15) 13Min SC-67 PDF

    c5088 transistor

    Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
    Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154


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    1853IMPATT c5088 transistor transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N PDF

    j10016

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M J10015 M J10016 SWITCHMODE Series NPN Silicon Power Darlington TVansistors w ith B ase-Em itter Speedup Diode 50 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 AND 500 VOLTS 250 WATTS The MJ10015 and MJ10016 Darlington transistors are designed for high-voltage,


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    MJ10015 MJ10016 j10016 PDF

    10IOA

    Abstract: P151 T151 T460 T930 TS802C06 SS003 ior P151
    Text: TS802C06 ioa '> a y h + - / < '; 7 '^ V + - K SCHOTTKY BARRIER DIODE : Features • S IE ft£ * < T O Surface mount device • 1&VF Low VF Super high speed switching. Connection Diagram High reliability by planer design • £ i & : Applications High speed power sw itching.


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    TS802C06 500ns, l95t/R89 10IOA P151 T151 T460 T930 SS003 ior P151 PDF

    TF5G

    Abstract: H R C M F 2J ir1f ESAC61-004 SC-65
    Text: E S A C 6 1 - 0 4 1 2 A ’ Outline Drawings SCHOTTKY BARRIER DIODE : Features • i&vF JEDEC Low VF • X -f EIAJ SC-65 X tT - K tf # * « * .' Super high speed switching. Connection Diagram High reliability by planer design : Applications High speed power switching.


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    AC61-004 SC-65 500ns TF5G H R C M F 2J ir1f ESAC61-004 SC-65 PDF

    TS802C06

    Abstract: No abstract text available
    Text: TS802C06 ioa : Outline Drawings '> 3 SCHOTTKY BARRIER DIODE : Features Surface mount device JEDEC EIAJ ’ Low VF Super high speed switching. • f v —r - m m c • U S t ifc j s s s iu s t t Connection Diagram High reliability by planer design . rT^ : Applications


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    TS802C06 500ns, Q00L444 TS802C06 0QQb445 PDF

    Untitled

    Abstract: No abstract text available
    Text: TRANSISTOR MODULE SQP400AA120 S Q D 4 0 0 A A 1 2 0 is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from Semiconductor elements for


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    SQP400AA120 a400A 00020m SQD400AA120 PDF

    TS802C09

    Abstract: Collmer SC
    Text: TS802C09< ioa SCHOTTKY BARRIER DIODE Features • »»*#1*^116 Surface mount device. • 1fcVF Low VF • X-f Xl£-KA *#*i:3fc\,' •w s& s* Connection Diagram Super high speed switching. • TV-*- Jt t f t f l MRt t High reliability by planer design. ■ £ ! & : Applications


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    TS802C09 500ns, TS802C09( Collmer SC PDF

    KE 10A DIODE

    Abstract: No abstract text available
    Text: TS802C09< ioa SCHOTTKY BARRIER DIODE Features • »»*#1*^116 Surface mount device. • 1fcVF Low VF • X-f Xl£-KA *#*i:3fc\,' Super high speed switching. •w s& s* Connection Diagram • TV-*- Jt t f t f l MRt t High reliability by planer design. ■ £ ! & : Applications


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    TS802C09< 500ns, I95t/R89) KE 10A DIODE PDF

    a467

    Abstract: TS802C09 ts802c PUAR
    Text: TS802C09< ioa SCHOTTKY BARRIER DIODE Features • »»*#1*^116 Surface mount device. • 1fcVF Low VF • X-f Xl£-KA *#*i:3fc\,' Super high speed switching. •w s& s* Connection Diagram • TV-*- Jt t f t f l MRt t High reliability by planer design. ■ £ ! & : Applications


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    TS802C09 500ns, TS802C09( a467 ts802c PUAR PDF

    802C06

    Abstract: No abstract text available
    Text: T S 802C 06 ioa '> a y h+ — * < U T ¥ 4 # — K SCHOTTKY BARRIER DIODE I Features Surface mount device • teVF Low V f • 7 .4 "J? > V * . M - KA * # * C iS I ' Super high speed switching. m nu&m Connection Diagram High reliability by planer design.


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    --500ns, TS802C06 TS802C06I10A) 802C06 PDF

    30S3

    Abstract: AH20 T151 TS802C04 TS802
    Text: TS802C04 ioa SCHOTTKY BARRIER DIODE I Features m Surface m ount device. • t e VF Low V f Connection Diagram Super high speed sw itch in g . • T V - * - * S 1± High reliability by planer d e s ig n , I Applications High speed pow er s w itc h in g .


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    TS802C04 500ns, A23Tg30Â AfflTi30Â I95t/R89) Shl50 30S3 AH20 T151 TS802 PDF

    ESAC61-004

    Abstract: SC-65 a469 esac61 SCHOTTKY -004
    Text: E S A 6 C 1 - 4 i 2 A SCH O TTKY BARRIER DIODE ^ Features 1&VF Low V f * 4 " /T X V -V ic & i' Super high speed switching. im t t t Connection Diagram SH4 High reliability by planer design : Applications High speed power switching. M axim um Ratings and Characteristics


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    ESAC61-004 SC-65 500ns ESAC61 SC-65 a469 SCHOTTKY -004 PDF

    erc12 diode

    Abstract: marking A7 ERC12 DIODE A46 marking A46 general purpose diode marking code -06 general purpose diode marking code -08
    Text: ERC12 i.2A I Outline D raw ings - M t M m m ? * * - k _ GEN ERAL USE R EC TIFIER DIODE -w¿3 5. — 28MIN — /Q 8 20MIN — : Features • •0— Hi gh surge current • 'JV£ M $ A • f f if flfit t ■ S /jv i Marking Compact size, lightweight


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    ERC12 28MIN erc12 diode marking A7 DIODE A46 marking A46 general purpose diode marking code -06 general purpose diode marking code -08 PDF

    diode ars1

    Abstract: IR151
    Text: TS802C04 ioa SCHOTTKY BARRIER DIODE • 4 $ £ : Features Surface m ount device. • 1& V f Low V f • wt 7A"J*>9X t r - * (=& i ' Connection Diagram Super high speed sw itchin g. • TV— *H± High reliability by planer design, : Applications High speed pow er s w itc h in g .


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    TS802C04( 500ns, I95t/R89 diode ars1 IR151 PDF

    A461

    Abstract: TS802C04
    Text: TS802C04 ioa SCHOTTKY BARRIER DIODE • 4 $ £ : Features Surface m ount device. • 1& V f Low V f • wt 7A"J*>9X t r - * (=& i ' Connection Diagram Super high speed sw itchin g. • TV— *H± High reliability by planer design, : Applications High speed pow er s w itc h in g .


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    TS802C04 500ns, A461 PDF

    a461

    Abstract: TS802C04
    Text: TS802C04 ioa SCHOTTKY BARRIER DIODE • 4 $ £ : Features Surface m ount device. • 1& V f Low V f • wt 7A"J*>9X t r - * (=& i ' Connection Diagram Super high speed sw itchin g. • TV— *H± High reliability by planer design, : Applications High speed pow er s w itc h in g .


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    TS802C04 500ns, a461 PDF

    Ry110

    Abstract: diode cross reference RY104 a2305 RY115 MICROWAVE ASSOCIATES IN3716 diode ry24 RY101 1N3717
    Text: D 94D 0 0 0 1 3 2 5 7 8 2 5 2 CUSTOM COMPONENTS INC 7 " - o / - o ^ Ë F | 2 5 7 f l E S S D0DDD13 4 Custom Components, Inc. Box SSUt Lebanon, AT. J. 088SS 201 534-6151 TUNNEL DIODE CROSS REFERENCE GENERAL ELECTRIC AERTECH AERTECH # C C I# AERTECH # CCI #


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    QD0D013 534-61S1 A1D207A A1D207E A1E207A A1E207E A1A210D A1A210E A1B210D A1B210E Ry110 diode cross reference RY104 a2305 RY115 MICROWAVE ASSOCIATES IN3716 diode ry24 RY101 1N3717 PDF

    A461

    Abstract: No abstract text available
    Text: TS802C04 ioa '> a 'y h + —*'< l) T ÿ ' i J r — K SCHOTTKY BARRIER DIODE • J& S : : Features • mm Surface m ount device. • flSV F Low V f • T A 'y + 's V * I f - FA"'# $ ' C onnection D iagram Super high speed sw itchin g. • 7V —j — iiffilciSigff


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    TS802C04( 500ns, A461 PDF