TS802C06 Search Results

TS802C06

Contextual Info: TS802C06 1OA <§ SCHOTTKY BARRIER DIODE I • O u tlin e D ra w in g Features • • • • Connection Diagram Surface mount device Lo w V f Super high speed switching High reliability by planer design H Applications • High speed power switching ■

Contextual Info: TS802C06 10A (60V / 10A ) Outline drawings, mm SCHOTTKY BARRIER DIODE 0.9 ±0.3 K-Pack(L) 4.5 ±0.2 1.32 3.0 ±0.3 9.3 ±0.5 1.5 Max 10 +0.5 +0.2 1.2 ±0.2 0.8 —0.1 0.4 +0.2 2.7 5.08 1. Gate 2, 4. Drain 3. Source Features JEDEC Low VF EIAJ Super high speed switching

Contextual Info: TS802C06 10A (60V / 10A ) Outline drawings, mm SCHOTTKY BARRIER DIODE 0.9 ±0.3 K-Pack(L) 4.5 ±0.2 1.32 3.0 ±0.3 9.3 ±0.5 1.5 Max 10 +0.5 +0.2 1.2 ±0.2 0.8 —0.1 0.4 +0.2 2.7 5.08 1. Gate 2, 4. Drain 3. Source Features JEDEC Low VF EIAJ Super high speed switching

TS802C06

Contextual Info: TS802C06 ioa : Outline Drawings '> 3 SCHOTTKY BARRIER DIODE : Features Surface mount device JEDEC EIAJ ’ Low VF Super high speed switching. • f v —r - m m c • U S t ifc j s s s iu s t t Connection Diagram High reliability by planer design . rT^ : Applications

Contextual Info: Schottky-Barrier Diodes Dual package Ratings and characteristics Maximum rating Vrrm lo *1 TS802C06 TS802C09 TP802C04 TP802C06 TP802C09 ESAC82-004 ESAC82M-004 O II CO ^1 5.0 Mass Grams Fig. No. Irrm * 3 Max. mA Dimensions -40 t o +125 0.55 If=2.5A 5.0 0.6

TS802C06

Abstract: ts802c
Contextual Info: TS802C06 10A (60V / 10A ) Outline drawings, mm SCHOTTKY BARRIER DIODE 0.9 ±0.3 K-Pack(L) 4.5 ±0.2 1.32 3.0 ±0.3 9.3 ±0.5 1.5 Max 10 +0.5 +0.2 1.2 ±0.2 0.8 —0.1 0.4 +0.2 2.7 5.08 1. Gate 2, 4. Drain 3. Source Features JEDEC Low VF EIAJ Super high speed switching

Contextual Info: TS802C06 10A (60V / 10A ) Outline drawings, mm SCHOTTKY BARRIER DIODE 0.9 ±0.3 K-Pack(L) 4.5 ±0.2 1.32 3.0 ±0.3 9.3 ±0.5 1.5 Max 10 +0.5 +0.2 1.2 ±0.2 0.8 —0.1 0.4 +0.2 2.7 5.08 1. Gate 2, 4. Drain 3. Source Features JEDEC Low VF EIAJ Super high speed switching

Contextual Info: TS802C06 10A (60V / 10A ) Outline drawings, mm SCHOTTKY BARRIER DIODE 0.9 ±0.3 K-Pack(L) 4.5 ±0.2 1.32 3.0 ±0.3 9.3 ±0.5 1.5 Max 10 +0.5 +0.2 1.2 ±0.2 0.8 —0.1 0.4 +0.2 2.7 5.08 1. Gate 2, 4. Drain 3. Source Features JEDEC Low VF EIAJ Super high speed switching

10IOA

Abstract: P151 T151 T460 T930 TS802C06 SS003 ior P151
Contextual Info: TS802C06 ioa '> a y h + - / < '; 7 '^ V + - K SCHOTTKY BARRIER DIODE : Features • S IE ft£ * < T O Surface mount device • 1&VF Low VF Super high speed switching. Connection Diagram High reliability by planer design • £ i & : Applications High speed power sw itching.

Contextual Info: TS802C06 10A <§ B Outline Drawing 3 o 1.32(0.05) X 3 in (D @ II u J1 1.2 (0.05) 1 0.8 0.03) n—- IS5 o.< (0.02) 5.08 0 20) 2.7 ( . • Features 1.0(0.04) d (0.06) 1 9.3 10.5 (0.41) 4.5 (0.11 i 2) SC H O TTK Y B A R R IER D IO D E ( 0 . 11) Connection Diagram

802C06

Contextual Info: T S 802C 06 ioa '> a y h+ — * < U T ¥ 4 # — K SCHOTTKY BARRIER DIODE I Features Surface mount device • teVF Low V f • 7 .4 "J? > V * . M - KA * # * C iS I ' Super high speed switching. m nu&m Connection Diagram High reliability by planer design.

6DI15S-050

Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
Contextual Info: fl^ Ä f^ l/T y p e Number Index Page Page Page Page Page Page 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 12 17 17 14 13 15 1MBH15D-120 1MBH20D-060 1MBH25-120 1MBH25D-120 1MBH30D-060 1MBH50-060 19 19 19 19 19 19 2DI75Z-120 2DI75Z-140

5n fast recovery diodes

Abstract: 30A 45V SCHOTTKY BARRIER RECTIFIER GENERAL SEMICONDUCTOR SMD DIODES smd diode 0.5A fast 600v LOW LOSS FAST RECOVERY DUAL DIODES
Contextual Info: CONTENTS I. II. III. IV. V. SMD RECTIFIER DIODE LIST. SMD PACKAGE OUTLINE DRAWINGS.

Contextual Info: M/m 5? 4 yJj.TJL' m — K / Rectifier Diodes JfelS» ir m 2 in one-package a Devieetype KS823C04 T a=2£C Therm«! rating Characteristics • *3 lFSM*a Tj and Tstg Max. Volts Max.mA Amps. r SMP t f f t A Maximum ratiog VftRM k ) * 1 Volts Amps. SMD KP823C04

mp2a5100

Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
Contextual Info: 富士電機半導体 総 合 カ タ ログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors

Contextual Info: SCHOTTKY BARRIER DIODES 20 - 90Vo Its 20 - 30V O LT S Part Number •o A PAC KAG E SURFACE MOUNT M S flfttfe ERA82-004 *1 ERA83-004 *1 ERA81-004 *2 ERB83-004 *2 ERC81-004 *4 ERC81S-004 *4 ERC80-004 ERC62-004 ERC80M-004 ERC62M-004 AXIAL TO*220 TO-220F ,TQs22 F<5 ,

TL130

Abstract: tc122 25 8 4 yg802c10 SD883-04 SD833-04 LM3661TL-1.40 TC8520 tc9145 TS802C09 ERA82-004
Contextual Info: 整流ダイオード / Rectifier Diodes • ショットキーバリアダイオード Schottky-Barrier Diodes（SBD） シングル 1 in one-package 形 式 Device type ERA82-004 SC802-04 SC802-06 SC802-09 ERA83-004 ERA83-006 ERA81-004 ERA84-009 ERA85-009

G-160B

Abstract: pg123s15 2FI300A-060 yg121s15 6RI50E-080M5 PA905C6 2fi300a esja18-08 ERD81-004 ESJA83-16A
Contextual Info: Notice of Scheduled Discontinuation of Products Because we are unable to ensure the continued production and maintenance of some manufacturing equipment for our semiconductor products, the products for which stable production and sufficient reliability are expected to become difficult will be discontinued as

Contextual Info: 802 T S C 0 6 io a ’ O utline D raw ings SCHOTTKY BARRIER DIODE 4.5 9 1.32 2 1 t CD <3> II : Features 2 Irrf S $o aV r a i M f 5.oq 2.7 • fm n w s m Surface mount device • 1&VF JEDEC EIAJ Low VF Super high speed switching. Connection Diagram High reliability by planer design

TS802C06

Contextual Info: T S 8 0 2 C 0 6 io a ’ Outline Drawings SCHOTTKY BARRIER DIODE 4.5 9 1.32 2 1 t CD <3> II : Features 2 Irrf S $o a V r a i M f 5.oq 2.7 • fm n w s m Surface mount device • 1&VF JEDEC EIAJ Low V F Super high speed switching. Connection Diagram High reliability by planer design

yg802c10

Abstract: LM3661TL-1.40 YG803C04 YG803C06 TL1115 tc-118 sd TL130 YG805C10 YG835C04 YG811S04
Contextual Info: 整流ダイオード / Rectifier Diodes • ショットキーバリアダイオード Schottky-Barrier Diodes（SBD） シングル 1 in one-package 形 式 Device type SMD 絶対最大定格 対応品 Maximum rating VRRM IF AV ＊1 Volts Amps. 接合保存温度

TS802C06

Contextual Info: T S 8 0 2 C 0 6 io a ’ Outline Drawings SCHOTTKY BARRIER DIODE 4.5 9 1.32 2 1 t CD <3> II : Features 2 Irrf i S $o a V r a M f 5.oq 2.7 • fm n w s m Surface mount device • 1&VF JEDEC EIAJ Low VF Super high speed switching. Connection Diagram High reliability by planer design

YG811S06

Abstract: SD883-04 SD833 ERA82-004 ESAB82-004 ESAB85-009 ESAC82-004 TP801C04 TP801C06 TP802C04
Contextual Info: Schottky-barrier diode Quick Selection Guide Nov-01 SBD Single Package VRRM Volts 20 30 40 Io 45 60 O O O Lead O O O O O O O O O O O O O O SC(SMD) O O SD(SMD) O O O K-pack(SMD) K-pack TO-220AB O O O O O O TO-220F O O O O TO-3P M5R POWER M6R M8R M6R O O O

common anode schottky to220

Abstract: ERB81-004 era-84 era82 ks823c esac82
Contextual Info: SCHOTTKY BARRIER DIODES <S 20 - 90Volts 45 VOLTS 2 0 - 3 0 VOLTS PACKAGE Part Number lo A SURFACE MOUNT SC TYPE 60 VOLTS lo (A) Part Number 1 SC802-04 Part Number SC802-06 90 VOLTS lo (A) Part Number 1 SC802-09 lo (A) 1 ERA82-004 *1 *1 1 ERA85-009 *1 ’1