Untitled
Abstract: No abstract text available
Text: STPSC16H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC16H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band-gap material
|
Original
|
PDF
|
STPSC16H065C
O-220AB
STPSC16H065CT
DocID024810
|
Untitled
Abstract: No abstract text available
Text: STPSC12H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC12H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material
|
Original
|
PDF
|
STPSC12H065C
O-220AB
STPSC12H065CT
DocID024809
|
Untitled
Abstract: No abstract text available
Text: STPSC16H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC16H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band-gap material
|
Original
|
PDF
|
STPSC16H065C
O-220AB
STPSC16H065CT
DocID024810
|
Untitled
Abstract: No abstract text available
Text: STPSC8H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC8H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material
|
Original
|
PDF
|
STPSC8H065C
O-220AB
STPSC8H065CT
DocID024808
|
Untitled
Abstract: No abstract text available
Text: STPSC20H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 1 K (2) A2 (3) A2 A1 K TO-220AB STPSC20H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material
|
Original
|
PDF
|
STPSC20H065C
O-220AB
STPSC20H065CT
DocID023605
|
6A1 diode
Abstract: 7006S VPS05604
Text: BAS 70-06S Silicon Schottky Diode Array 4 • General-purpose diode for high-speed switching 5 6 • Circuit protection • Voltage clamping • High-level detecting and mixing 2 A1/A2 C2 C1 6 5 4 3 1 VPS05604 Di2 Di1 1 2 3 C1 C2 A1/A2 EHA07288 Type Marking
|
Original
|
PDF
|
70-06S
VPS05604
EHA07288
OT-363
EHB00042
EHB00043
EHB00044
EHB00045
Oct-07-1999
6A1 diode
7006S
VPS05604
|
EHA07182
Abstract: BAV70S VPS05604 6C12 5a2 DIODE C2A26 marking 5a2
Text: BAV 70S Silicon Switching Diode Array 4 5 • For high-speed switching applications 6 • Internal galvanic isolated diode arrays in one package • Common cathode 2 3 1 VPS05604 C1/C2 A2 6 5 A1 4 Di2 Di1 1 2 3 A1 A2 C1/C2 EHA07182 Type Marking BAV 70S A4s
|
Original
|
PDF
|
VPS05604
EHA07182
OT-363
Tstg10
Oct-07-1999
EHB00068
EHB00065
EHA07182
BAV70S
VPS05604
6C12
5a2 DIODE
C2A26
marking 5a2
|
Pin diode G4S
Abstract: VSO05561
Text: BAR 63 . W Silicon PIN Diode 3 • PIN diode for high speed switching of RF signal • Low forward resistance • Very low capacitance 2 • For frequencies up to 3 GHz 1 BAR 63-04W BAR 63-05W C1/A2 3 BAR 63-06W C1/C2 A1/A2 3 3 1 2 1 2 1 2 A1 C2 A1 A2 C1
|
Original
|
PDF
|
3-04W
3-05W
3-06W
VSO05561
EHA07181
EHA07179
EHA07187
OT-323
Pin diode G4S
VSO05561
|
STTH12012TV1
Abstract: STTH12012TV2 JESD97 STTH12012TV STTH12012
Text: STTH12012TV Ultrafast recovery - 1200 V diode Main product characteristics IF AV 2 x 60 A VRRM 1200 V Tj 150° C VF (typ) 1.30 V trr (typ) 50 ns K2 A2 A2 K1 K1 A1 K2 A1 STTH12012TV STTH12012TV2 A1 A1 K1 Features and benefits • Ultrafast, soft recovery ■
|
Original
|
PDF
|
STTH12012TV
STTH12012TV2
STTH12012TV1
STTH12012TV1
STTH12012TV2
JESD97
STTH12012TV
STTH12012
|
Untitled
Abstract: No abstract text available
Text: STTH12012TV Ultrafast recovery - 1200 V diode Main product characteristics IF AV 2 x 60 A VRRM 1200 V Tj 150° C VF (typ) 1.30 V trr (typ) 50 ns K2 A2 A2 K1 K1 A1 K2 A1 STTH12012TV STTH12012TV2 A1 A1 K1 Features and benefits • Ultrafast, soft recovery ■
|
Original
|
PDF
|
STTH12012TV
STTH12012TV2
STTH12012TV1
|
Pin diode G4S
Abstract: BAR63-04W BAR63-05W BAR63 BAR63-06W VSO05561 diode C2 marking c2 diode diode MARKING A1 marking G5s
Text: BAR63.W Silicon PIN Diode 3 • PIN diode for high speed switching of RF signal • Low forward resistance • Very low capacitance 2 • For frequencies up to 3 GHz 1 BAR63-04W BAR63-05W C1/A2 3 BAR63-06W C1/C2 A1/A2 3 3 1 2 1 2 1 2 A1 C2 A1 A2 C1 C2 EHA07181
|
Original
|
PDF
|
BAR63.
BAR63-04W
BAR63-05W
BAR63-06W
VSO05561
EHA07181
EHA07179
EHA07187
Pin diode G4S
BAR63-04W
BAR63-05W
BAR63
BAR63-06W
VSO05561
diode C2
marking c2 diode
diode MARKING A1
marking G5s
|
Untitled
Abstract: No abstract text available
Text: BAV 70U Silicon Switching Diode Array 5 For high-speed switching applications 4 6 Internal galvanic isolated diode arrays in one package 3 Common cathode 2 1 C1/C2 A2 A1 6 5 4 VPW09197 Di2 Di1 1 2 3 A1 A2 C1/C2 EHA07182 Type Marking BAV 70U A4s Pin Configuration
|
Original
|
PDF
|
VPW09197
EHA07182
SC-74
Oct-07-1999
EHB00068
EHB00065
|
STPS50u100
Abstract: STPS50U100CT STPS50U100C
Text: STPS50U100C ULVF power Schottky rectifier Features A1 • ultralow forward voltage drop ■ high current capability ■ high frequency operation K A2 Description A2 A1 K A2 A1 The STPS50U100C is a dual power Schottky diode rectifier, suited for high frequency switch
|
Original
|
PDF
|
STPS50U100C
STPS50U100C
O-220AB
O-220AB
STPS50U100CT
STPS50U100CR
STPS50u100
STPS50U100CT
|
VSO05561
Abstract: No abstract text available
Text: BBY 52-05W Silicon Tuning Diode 3 • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment 2 1 VSO05561 C1/C2 3 1 2 A1 A2 EHA07179 Type Marking BBY 52-05W S2s Pin Configuration 1=A1 2=A2
|
Original
|
PDF
|
2-05W
VSO05561
EHA07179
OT-323
May-20-1999
VSO05561
|
|
|
bav99w A7S
Abstract: BAV99W VSO05561
Text: BAV99W Silicon Switching Diode Array 3 For high-speed switching applications Connected in series 2 C1/A2 3 1 1 2 A1 C2 VSO05561 EHA07181 Type Marking BAV99W A7s Pin Configuration 1 = A1 2 = C2 Package 3 = C1/A2 SOT323 Maximum Ratings Parameter Symbol Diode reverse voltage
|
Original
|
PDF
|
BAV99W
VSO05561
EHA07181
OT323
Aug-20-2001
EHB00078
EHB00075
bav99w A7S
BAV99W
VSO05561
|
Marking a1s
Abstract: BAW56W VSO05561
Text: BAW56W Silicon Switching Diode Array 3 • For high-speed switching applications • Common anode 2 A1/A2 3 1 1 2 C1 C2 VSO05561 EHA07187 Type BAW56W Marking A1s 1 = C1 Pin Configuration 2 = C2 3 = A1/A2 Package SOT323 Maximum Ratings Parameter Symbol Diode reverse voltage
|
Original
|
PDF
|
BAW56W
VSO05561
EHA07187
OT323
Jun-29-2001
EHB00093
EHB00090
Marking a1s
BAW56W
VSO05561
|
BAV70W
Abstract: VSO05561 10TSV
Text: BAV70W Silicon Switching Diode Array 3 For high-speed switching applications Common cathode 2 C1/C2 3 1 1 2 A1 A2 VSO05561 EHA07179 Type Marking BAV70W A4s Pin Configuration 1 = A1 2 = A2 Package 3 = C1/2 SOT323 Maximum Ratings Parameter Symbol Diode reverse voltage
|
Original
|
PDF
|
BAV70W
VSO05561
EHA07179
OT323
Jul-06-2001
EHB00068
EHB00065
BAV70W
VSO05561
10TSV
|
BAV99T
Abstract: SC75
Text: BAV99T Silicon Switching Diode 3 • For high-speed switching applications • Connected in series 2 C1/A2 3 1 1 2 A1 C2 VPS05996 EHA07181 Type Marking BAV99T A7s Pin Configuration 1 = A1 2 = C2 Package 3 = C1/A2 SC75 Maximum Ratings Parameter Symbol Diode reverse voltage
|
Original
|
PDF
|
BAV99T
VPS05996
EHA07181
Jun-29-2001
EHB00078
EHB00075
BAV99T
SC75
|
smd diode sod-323 marking code a2
Abstract: smd diode order marking code stmicroelectronics STMicroelectronics smd marking code D31 SMD MARKING STMicroelectronics smd DIODE marking code DIODE D29 -08 st smd diode marking code "LE" BAS70-05WFILM smd diode sod-323 marking code a1 smd marking code stmicroelectronics
Text: BAS70JWFILM SMALL SIGNAL SCHOTTKY DIODE Table 1: Main Product Characteristics NC IF 70 mA VRRM 70 V Tj 150°C VF max 0.41 V K2 K K A A K2 NC K1 A K1 A BAS70WFILM BAS70-06WFILM A2 K2 A2 K1 K K2 A1 A1 BAS70-05WFILM FEATURES AND BENEFITS • ■ ■ A1 BAS70-04WFILM
|
Original
|
PDF
|
BAS70JWFILM
BAS70WFILM
BAS70-06WFILM
BAS70-05WFILM
BAS70-04WFILM
OT-323
OD-323
smd diode sod-323 marking code a2
smd diode order marking code stmicroelectronics
STMicroelectronics smd marking code
D31 SMD MARKING
STMicroelectronics smd DIODE marking code
DIODE D29 -08
st smd diode marking code "LE"
BAS70-05WFILM
smd diode sod-323 marking code a1
smd marking code stmicroelectronics
|
SC75
Abstract: BAV70T
Text: BAV70T Silicon Switching Diode Array 3 For high-speed switching applications Common cathode 2 C1/C2 3 1 1 2 A1 A2 VPS05996 EHA07179 Type Marking BAV70T A4s Pin Configuration 1 = A1 2 = A2 Package 3 = C1/2 SC75 Maximum Ratings Parameter Symbol Diode reverse voltage
|
Original
|
PDF
|
BAV70T
VPS05996
EHA07179
Aug-24-2001
EHB00068
EHB00065
SC75
BAV70T
|
VSO05561
Abstract: No abstract text available
Text: BAW 56W Silicon Switching Diode Array 3 • For high-speed switching applications • Common anode 2 A1/A2 3 1 1 2 C1 C2 VSO05561 EHA07187 Type Marking BAW 56W A1s Pin Configuration 1 = C1 2 = C2 Package 3 = A1/A2 SOT-323 Maximum Ratings Parameter Symbol Diode reverse voltage
|
Original
|
PDF
|
VSO05561
EHA07187
OT-323
Oct-08-1999
EHB00093
EHB00090
VSO05561
|
BAW56U
Abstract: SC74
Text: BAW56U Silicon Switching Diode Array • For high-speed switching applications 5 4 6 • Common anode • Internal galvanic isolated diode arrays 3 in one package A1/A2 C2 C1 6 5 4 2 1 VPW09197 Di2 Di1 1 2 3 C1 C2 A1/A2 EHA07288 Type Marking BAW56U A1s Pin Configuration
|
Original
|
PDF
|
BAW56U
VPW09197
EHA07288
Jun-29-2001
EHB00093
EHB00090
BAW56U
SC74
|
6A1 diode
Abstract: BAW56S VPS05604
Text: BAW 56S Silicon Switching Diode Array 4 • For high-speed switching applications 5 6 • Common anode • Internal galvanic isolated diode arrays in one package A1/A2 C2 C1 6 5 4 2 3 1 VPS05604 Di2 Di1 1 2 3 C1 C2 A1/A2 EHA07288 Type Marking BAW 56S A1s
|
Original
|
PDF
|
VPS05604
EHA07288
OT-363
Oct-08-1999
EHB00093
EHB00090
6A1 diode
BAW56S
VPS05604
|
Untitled
Abstract: No abstract text available
Text: TH-Q1201-A1 /TH-Q1301-A1 /TH-Q1401-A1 60W / 80W / 1 0OW QUASI-CW LINEAR BAR ARRAYS DESCRIPTION The TH-Q1X01-A1 products are a high optical power laser diode sources for quasi-CW operation. The ‘X’ index stands for the type of diode bar: X = 2, 3, 4 respectively for 60W,
|
OCR Scan
|
PDF
|
TH-Q1201-A1
/TH-Q1301-A1
/TH-Q1401-A1
TH-Q1X01-A1
js/100Hz
16mJHowever
8014-ed2
|
