Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    DIODE 9C Search Results

    DIODE 9C Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE 9C Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJS6005TDPN-EJ 600V - 15A - Diode SiC Schottky Barrier Diode R07DS0899EJ0101 Rev.1.01 Nov 21, 2012 Features • New semiconductor material : Silicon Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0003AN-A


    Original     		PDF RJS6005TDPN-EJ R07DS0899EJ0101 PRSS0003AN-A O-220AB-2L)

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJS6004WDPK 600V - 20A - Diode SiC Schottky Barrier Diode R07DS0897EJ0200 Rev.2.00 Nov 21, 2012 Features • New semiconductor material: Silicon Carbide Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0004ZE-A


    Original     		PDF RJS6004WDPK R07DS0897EJ0200 PRSS0004ZE-A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJS6004WDPK 600V - 20A - Diode SiC Schottky Barrier Diode R07DS0897EJ0100 Rev.1.00 Nov 01, 2012 Features • New semiconductor material: Silicon Carbide Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0004ZE-A


    Original     		PDF RJS6004WDPK R07DS0897EJ0100 PRSS0004ZE-A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJS6005WDPK 600V - 30A - Diode SiC Schottky Barrier Diode R07DS0901EJ0200 Rev.2.00 Jan 28, 2014 Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0004ZE-A


    Original     		PDF RJS6005WDPK R07DS0901EJ0200 PRSS0004ZE-A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJS6005WDPK 600V - 30A - Diode SiC Schottky Barrier Diode R07DS0901EJ0201 Rev.2.01 Jan 31, 2014 Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0004ZE-A


    Original     		PDF RJS6005WDPK R07DS0901EJ0201 PRSS0004ZE-A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJS6005TDPN-EJ 600V - 15A - Diode SiC Schottky Barrier Diode R07DS0899EJ0100 Rev.1.00 Nov 06, 2012 Features • New semiconductor material : Silicon Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0003AN-A


    Original     		PDF RJS6005TDPN-EJ R07DS0899EJ0100 PRSS0003AN-A O-220AB-2L)

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJS6005WDPK 600V - 30A - Diode SiC Schottky Barrier Diode R07DS0901EJ0100 Rev.1.00 Nov 01, 2012 Features • New semiconductor material: Silicon Carbide Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0004ZE-A


    Original     		PDF RJS6005WDPK R07DS0901EJ0100 PRSS0004ZE-A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJS6004WDPK 600V - 20A - Diode SiC Schottky Barrier Diode R07DS0897EJ0300 Rev.3.00 Jan 29, 2014 Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0004ZE-A


    Original     		PDF RJS6004WDPK R07DS0897EJ0300 PRSS0004ZE-A

    RJS6004TDPP-EJ

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJS6004TDPP-EJ R07DS0896EJ0200 Rev.2.00 Oct 17, 2013 600V - 10A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A


    Original     		PDF RJS6004TDPP-EJ R07DS0896EJ0200 PRSS0002ZA-A O-220FP-2L) RJS6004TDPP-EJ

    RJS6004TDPP-EJ

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJS6004TDPP-EJ R07DS0896EJ0300 Rev.3.00 Jan 23, 2014 600V - 10A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A


    Original     		PDF RJS6004TDPP-EJ R07DS0896EJ0300 PRSS0002ZA-A O-220FP-2L) RJS6004TDPP-EJ

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJS6004TDPN-EJ 600V - 10A - Diode SiC Schottky Barrier Diode R07DS0895EJ0100 Rev.1.00 Nov 06, 2012 Features • New semiconductor material: Silicon Carbide Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0003AN-A


    Original     		PDF RJS6004TDPN-EJ R07DS0895EJ0100 PRSS0003AN-A O-220AB-2L)

    RJS6004TDPP-EJ

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJS6004TDPP-EJ R07DS0896EJ0102 Rev.1.02 Nov 21, 2012 600V - 10A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A


    Original     		PDF RJS6004TDPP-EJ R07DS0896EJ0102 PRSS0002ZA-A O-220FP-2L) RJS6004TDPP-EJ

    PRSS0003ZE-A

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJS6004WDPQ-E0 600V - 20A - Diode SiC Schottky Barrier Diode R07DS0898EJ0101 Rev.1.01 Nov 21, 2012 Features • New semiconductor material: Silicon Carbide Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0003ZE-A


    Original     		PDF RJS6004WDPQ-E0 R07DS0898EJ0101 PRSS0003ZE-A O-247) PRSS0003ZE-A

    RJS6005WDPQ-E0

    Abstract: Nov01
    Text: Preliminary Datasheet RJS6005WDPQ-E0 600V - 30A - Diode SiC Schottky Barrier Diode R07DS0902EJ0100 Rev.1.00 Nov 01, 2012 Features • New semiconductor material: Silicon Carbide Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0003ZE-A


    Original     		PDF RJS6005WDPQ-E0 R07DS0902EJ0100 PRSS0003ZE-A O-247) RJS6005WDPQ-E0 Nov01

    RJS6005TDPP-EJ

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJS6005TDPP-EJ R07DS0900EJ0200 Rev.2.00 Oct 17, 2013 600V - 15A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A


    Original     		PDF RJS6005TDPP-EJ R07DS0900EJ0200 PRSS0002ZA-A O-220FP-2L) RJS6005TDPP-EJ

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJS6004TDPN-EJ 600V - 10A - Diode SiC Schottky Barrier Diode R07DS0895EJ0101 Rev.1.01 Nov 21, 2012 Features • New semiconductor material: Silicon Carbide Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0003AN-A


    Original     		PDF RJS6004TDPN-EJ R07DS0895EJ0101 PRSS0003AN-A O-220AB-2L)

    RJS6005TDPP-EJ

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJS6005TDPP-EJ R07DS0900EJ0300 Rev.3.00 Jan 23, 2014 600V - 15A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A


    Original     		PDF RJS6005TDPP-EJ R07DS0900EJ0300 PRSS0002ZA-A O-220FP-2L) RJS6005TDPP-EJ

    RJS6004TDPP-EJ

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJS6004TDPP-EJ R07DS0896EJ0101 Rev.1.01 Nov 01, 2012 600V - 10A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A


    Original     		PDF RJS6004TDPP-EJ R07DS0896EJ0101 PRSS0002ZA-A O-220FP-2L) RJS6004TDPP-EJ

    silicon carbide diode

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJS6004WDPQ-E0 600V - 20A - Diode SiC Schottky Barrier Diode R07DS0898EJ0100 Rev.1.00 Nov 01, 2012 Features • New semiconductor material: Silicon Carbide Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0003ZE-A


    Original     		PDF RJS6004WDPQ-E0 R07DS0898EJ0100 PRSS0003ZE-A O-247) silicon carbide diode

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet NX8369TB LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION R08DS0043EJ0100 Rev.1.00 Jun 06, 2011 DESCRIPTION The NX8369TB is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode


    Original     		PDF NX8369TB R08DS0043EJ0100 NX8369TB OC-192

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet NX8369TS LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION R08DS0044EJ0100 Rev.1.00 Jun 06, 2011 DESCRIPTION The NX8369TS is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode


    Original     		PDF NX8369TS R08DS0044EJ0100 NX8369TS

    10 gb laser diode

    Abstract: PX10160E
    Text: Preliminary Data Sheet NX8349TB LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION R08DS0001EJ0100 Rev.1.00 Jul 26, 2010 DESCRIPTION The NX8349TB is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode


    Original     		PDF NX8349TB R08DS0001EJ0100 NX8349TB OC-192 R08DS0001EJ0100 10 gb laser diode PX10160E

    bc 7-25

    Abstract: NX7663JB-BC PX10160E
    Text: Preliminary Data Sheet NX7663JB-BC LASER DIODE InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 625 nm OTDR APPLICATION R08DS0011EJ0200 Rev.2.00 Sep 19, 2010 DESCRIPTION The NX7663JB-BC is a 1 625 nm Multiple Quantum Well MQW structure pulsed laser diode DIP module with single


    Original     		PDF NX7663JB-BC R08DS0011EJ0200 NX7663JB-BC 14-pin bc 7-25 PX10160E

    bc 7-25

    Abstract: NX7563JB-BC PX10160E
    Text: Preliminary Data Sheet NX7563JB-BC LASER DIODE InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 550 nm OTDR APPLICATION R08DS0010EJ0200 Rev.2.00 Sep 19, 2010 DESCRIPTION The NX7563JB-BC is a 1 550 nm Multiple Quantum Well MQW structure pulsed laser diode DIP module with single


    Original     		PDF NX7563JB-BC R08DS0010EJ0200 NX7563JB-BC 14-pin bc 7-25 PX10160E