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    DIODE 906 Search Results

    DIODE 906 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE 906 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    hc4-dc12v

    Abstract: HC4-DC24V HC2-DC24V HC2-SS-K HC3-DC24V HC3-DC6V-D-F nichifu HC4-DC24V-D HC1-DC12V HC2-L-DC24V-D-F
    Text: HC Has built-in diode to absorb surge For use in semiconductor circuits HC RELAY WITH DIODE TYPE FOR DC FEATURES 1. The built-in diode absorbs surge voltage arising when the coil goes to the off state (for DC type). Diode characteristics; Reverse breakdown voltage: 1,000V,


    Original     		PDF 25Y-3N, 25Y-3S 25-3X, 1071-A 25-3S 25-3TA 25-M3 hc4-dc12v HC4-DC24V HC2-DC24V HC2-SS-K HC3-DC24V HC3-DC6V-D-F nichifu HC4-DC24V-D HC1-DC12V HC2-L-DC24V-D-F

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJS6005TDPN-EJ 600V - 15A - Diode SiC Schottky Barrier Diode R07DS0899EJ0101 Rev.1.01 Nov 21, 2012 Features • New semiconductor material : Silicon Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0003AN-A


    Original     		PDF RJS6005TDPN-EJ R07DS0899EJ0101 PRSS0003AN-A O-220AB-2L)

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJS6004WDPK 600V - 20A - Diode SiC Schottky Barrier Diode R07DS0897EJ0200 Rev.2.00 Nov 21, 2012 Features • New semiconductor material: Silicon Carbide Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0004ZE-A


    Original     		PDF RJS6004WDPK R07DS0897EJ0200 PRSS0004ZE-A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJS6004WDPK 600V - 20A - Diode SiC Schottky Barrier Diode R07DS0897EJ0100 Rev.1.00 Nov 01, 2012 Features • New semiconductor material: Silicon Carbide Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0004ZE-A


    Original     		PDF RJS6004WDPK R07DS0897EJ0100 PRSS0004ZE-A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJS6005WDPK 600V - 30A - Diode SiC Schottky Barrier Diode R07DS0901EJ0200 Rev.2.00 Jan 28, 2014 Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0004ZE-A


    Original     		PDF RJS6005WDPK R07DS0901EJ0200 PRSS0004ZE-A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJS6005WDPK 600V - 30A - Diode SiC Schottky Barrier Diode R07DS0901EJ0201 Rev.2.01 Jan 31, 2014 Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0004ZE-A


    Original     		PDF RJS6005WDPK R07DS0901EJ0201 PRSS0004ZE-A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJS6005TDPN-EJ 600V - 15A - Diode SiC Schottky Barrier Diode R07DS0899EJ0100 Rev.1.00 Nov 06, 2012 Features • New semiconductor material : Silicon Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0003AN-A


    Original     		PDF RJS6005TDPN-EJ R07DS0899EJ0100 PRSS0003AN-A O-220AB-2L)

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJS6005WDPK 600V - 30A - Diode SiC Schottky Barrier Diode R07DS0901EJ0100 Rev.1.00 Nov 01, 2012 Features • New semiconductor material: Silicon Carbide Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0004ZE-A


    Original     		PDF RJS6005WDPK R07DS0901EJ0100 PRSS0004ZE-A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJS6004WDPK 600V - 20A - Diode SiC Schottky Barrier Diode R07DS0897EJ0300 Rev.3.00 Jan 29, 2014 Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0004ZE-A


    Original     		PDF RJS6004WDPK R07DS0897EJ0300 PRSS0004ZE-A

    RJS6004TDPP-EJ

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJS6004TDPP-EJ R07DS0896EJ0200 Rev.2.00 Oct 17, 2013 600V - 10A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A


    Original     		PDF RJS6004TDPP-EJ R07DS0896EJ0200 PRSS0002ZA-A O-220FP-2L) RJS6004TDPP-EJ

    RJS6004TDPP-EJ

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJS6004TDPP-EJ R07DS0896EJ0300 Rev.3.00 Jan 23, 2014 600V - 10A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A


    Original     		PDF RJS6004TDPP-EJ R07DS0896EJ0300 PRSS0002ZA-A O-220FP-2L) RJS6004TDPP-EJ

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJS6004TDPN-EJ 600V - 10A - Diode SiC Schottky Barrier Diode R07DS0895EJ0100 Rev.1.00 Nov 06, 2012 Features • New semiconductor material: Silicon Carbide Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0003AN-A


    Original     		PDF RJS6004TDPN-EJ R07DS0895EJ0100 PRSS0003AN-A O-220AB-2L)

    RJS6004TDPP-EJ

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJS6004TDPP-EJ R07DS0896EJ0102 Rev.1.02 Nov 21, 2012 600V - 10A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A


    Original     		PDF RJS6004TDPP-EJ R07DS0896EJ0102 PRSS0002ZA-A O-220FP-2L) RJS6004TDPP-EJ

    PRSS0003ZE-A

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJS6004WDPQ-E0 600V - 20A - Diode SiC Schottky Barrier Diode R07DS0898EJ0101 Rev.1.01 Nov 21, 2012 Features • New semiconductor material: Silicon Carbide Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0003ZE-A


    Original     		PDF RJS6004WDPQ-E0 R07DS0898EJ0101 PRSS0003ZE-A O-247) PRSS0003ZE-A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJS6005TDPP-EJ R07DS0900EJ0101 Rev.1.01 Nov 01, 2012 600V - 15A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A


    Original     		PDF RJS6005TDPP-EJ R07DS0900EJ0101 PRSS0002ZA-A O-220FP-2L)

    RJS6005TDPP-EJ

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJS6005TDPP-EJ R07DS0900EJ0200 Rev.2.00 Oct 17, 2013 600V - 15A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A


    Original     		PDF RJS6005TDPP-EJ R07DS0900EJ0200 PRSS0002ZA-A O-220FP-2L) RJS6005TDPP-EJ

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJS6004TDPN-EJ 600V - 10A - Diode SiC Schottky Barrier Diode R07DS0895EJ0101 Rev.1.01 Nov 21, 2012 Features • New semiconductor material: Silicon Carbide Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0003AN-A


    Original     		PDF RJS6004TDPN-EJ R07DS0895EJ0101 PRSS0003AN-A O-220AB-2L)

    RJS6005TDPP-EJ

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJS6005TDPP-EJ R07DS0900EJ0300 Rev.3.00 Jan 23, 2014 600V - 15A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A


    Original     		PDF RJS6005TDPP-EJ R07DS0900EJ0300 PRSS0002ZA-A O-220FP-2L) RJS6005TDPP-EJ

    RJS6004TDPP-EJ

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJS6004TDPP-EJ R07DS0896EJ0101 Rev.1.01 Nov 01, 2012 600V - 10A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A


    Original     		PDF RJS6004TDPP-EJ R07DS0896EJ0101 PRSS0002ZA-A O-220FP-2L) RJS6004TDPP-EJ

    silicon carbide diode

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJS6004WDPQ-E0 600V - 20A - Diode SiC Schottky Barrier Diode R07DS0898EJ0100 Rev.1.00 Nov 01, 2012 Features • New semiconductor material: Silicon Carbide Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0003ZE-A


    Original     		PDF RJS6004WDPQ-E0 R07DS0898EJ0100 PRSS0003ZE-A O-247) silicon carbide diode

    lm358 laser current driver

    Abstract: No abstract text available
    Text: Fiber Optic Business Unit Tyco Electronics/LDI 2 Olsen Avenue Edison, New Jersey 08820 USA Voice: 732-549-9001 Fax: 732-906-1559 Internet: www.laserdiode.com E-mail: sales@laserdiode.com Laser Diode Incorporated 1310nm Laser Diode Power to 2mW Singlemode 9/125/900 fiber


    Original     		PDF 1310nm 14-pin 1310nm lm358 laser current driver

    Laser diode lm358

    Abstract: lm358 laser current driver laser 1310nm LM358 laser driver TIP-120 Lucent Laser 2000 LASER DISTANCE METER
    Text: Fiber Optic Business Unit Tyco Electronics/LDI 2 Olsen Avenue Edison, New Jersey 08820 USA Voice: 732-549-9001 Fax: 732-906-1559 Internet: www.laserdiode.com E-mail: sales@laserdiode.com Laser Diode Incorporated 1310nm Laser Diode Power to 2mW Singlemode 9/125/900 fiber


    Original     		PDF 1310nm 14-pin 14-pin 1310nm Laser diode lm358 lm358 laser current driver laser 1310nm LM358 laser driver TIP-120 Lucent Laser 2000 LASER DISTANCE METER

    ldi SCW 1550

    Abstract: lucent laser 1550nm scw 1550 lm358 laser current driver 1550 laser diode TEC TO CAN lucent laser module 1550nm Lucent PIN photodiode 1550nm laser driver LM358
    Text: Fiber Optic Business Unit Tyco Electronics/LDI 2 Olsen Avenue Edison, New Jersey 08820 USA Voice: 732-549-9001 Fax: 732-906-1559 Internet: www.laserdiode.com E-mail: sales@laserdiode.com Laser Diode Incorporated 1550nm Laser Diode Power to 1mW Singlemode 9/125 /900 fiber


    Original     		PDF 1550nm 14-pin 1550nm ldi SCW 1550 lucent laser 1550nm scw 1550 lm358 laser current driver 1550 laser diode TEC TO CAN lucent laser module 1550nm Lucent PIN photodiode 1550nm laser driver LM358

    GR-468-CORE

    Abstract: SMF28
    Text: Fiber Optic Business Unit Tyco Electronics/LDI 2 Olsen Avenue Edison, New Jersey 08820 USA Voice: 732-549-9001 Fax: 732-906-1559 Internet: www.laserdiode.com E-mail: sales@laserdiode.com Laser Diode Incorporated InGaAs PIN Photo Diode Modules for DWDM/EDFA Tap Monitor Applications


    Original     		PDF alo3080-PM1 28-CPC6 3080-PM2 900um 3080-PM3 3080-PM4 GR-468-CORE SMF28