biconvex lens with focal length 1 m and diameter 25.4 mm
Abstract: laser diode DVD 100mw DL-3147-011 laser diode toshiba 780nm 650nm laser diode 200mw TOLD9225M mitsubishi laser diode OPHIR pd200 collimated LED 670 nm DL3147-011
Text: Laser Diodes, Optics, and Related Components - Optima Laser Diodes Laser Diode Mounting Kits Laser Diode Optics Glass Aspheric Lenses Plastic Aspheric Lenses Multi-element Lenses Diode Laser Modules OEM Diode Laser Modules Collimated Diode Lasers Optical Power
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658nm
ML1016R
685nm
ML1012R
785nm
ML64114R
Revised11JUN99
biconvex lens with focal length 1 m and diameter 25.4 mm
laser diode DVD 100mw
DL-3147-011
laser diode toshiba 780nm
650nm laser diode 200mw
TOLD9225M
mitsubishi laser diode
OPHIR pd200
collimated LED 670 nm
DL3147-011
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105386
Abstract: dek 1.5 47346-0001 WDK 2.5 105366 105396 105446 WDK 4N 10-588 102260
Text: Feed Through Terminals WDK 2.5 D WDK 2.5 D Diode terminal for lamp test circuits Diode terminal for lamp test circuits Branch with Diode Branch with Diode WDK 2.5 LD WDK 2.5 LD Branch with LED Branch with LED Terminal Block Selection Data Available Options
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4N/10
4N/41
105386
dek 1.5
47346-0001
WDK 2.5
105366
105396
105446
WDK 4N
10-588
102260
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Corning 7052
Abstract: No abstract text available
Text: Select Products Here Go DESCRIPTION TOX 9004 Gallium Aluminum Arsenide Infrared-Emitting Diode FEATURES The TOX 9004 is a GaAlAs emitter designed to emit near-infrared radiation when forward biased. ● Output spectrally, compatible with silicon sensors ●
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MIL-S-19500,
OX9004TX
OX9004TX.
MIL-STD-750
com/catalog/tox9004/TOX9004
Corning 7052
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c5088 transistor
Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154
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1853IMPATT
c5088 transistor
transistor C3207
TLO84CN
sec c5088
IN5355B
D2817A
C3207 transistor
toshiba f630
TLO81CP
MC74HC533N
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92256
Abstract: 44750 7432 truth table 90087
Text: AlGaAs SPST Non-Reflective PIN Diode Switch MA4AGSW1A Rev 2.0 FEATURES • • • • Ultra Broad Bandwidth: 10 GHz to 50 GHz Functional Bandwidth: 100 MHz to 70 GHz 1.0 dB Insertion Loss, 35 dB Isolation at 50 GHz M/A-COM’s unique patent pending AlGaAs
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Untitled
Abstract: No abstract text available
Text: No. SP07-58-9004A Date June 23, 2008 SPECIFICATION FOR 8G Fibre Channel SFP+ Fiber Optic Transceiver HTR6932R-E Signed by T. Nojiri Manager, Optical Device Engineering Dept. Hitachi Cable, Ltd. BEFORE USE – GENERAL SAFETY INSTRUCTIONS This document contains important information for the customer to avoid personal injury, or property damage. Prior to use, read this
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SP07-58-9004A
HTR6932R-E
SP07-58-9004A)
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foto transistor
Abstract: SFH905 p935 reflex 90041 Q62702-P1117 Q62703-P141
Text: SFH 900 SFH 900 feo06270 Miniatur-Reflexlichtschranken Miniature Light Reflection Switches Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale Features ● Reflexlichtschranken für den Nahbereich ●
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feo06270
foto transistor
SFH905
p935
reflex
90041
Q62702-P1117
Q62703-P141
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COLOR tv tube charger circuit diagrams
Abstract: MBRF 1015 CT smd diode S4 67A DO-213AB smd diode color marking code vacuum tube applications data book V40100PG diode 719 b340a EQUIVALENT 31gf6 SB050 D 168 s104 diode 87a
Text: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book rectifiers vishay general semiconductor vse-db0001-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vse-db0001-1102
I8262
COLOR tv tube charger circuit diagrams
MBRF 1015 CT
smd diode S4 67A
DO-213AB smd diode color marking code
vacuum tube applications data book
V40100PG
diode 719 b340a
EQUIVALENT 31gf6
SB050 D 168
s104 diode 87a
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Schottky Diode 039 B34
Abstract: S4 84a DIODE schottky MELF ZENER DIODE color bands blue diode RGP 15J sb050 d 331 s104 diode 87a 252 B34 SMD ZENER DIODE SB050 transistor equivalent MELF DIODE color bands smd transistor P2D
Text: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book rectifiers vishay general semiconductor vse-db0001-0809 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vse-db0001-0809
Schottky Diode 039 B34
S4 84a DIODE schottky
MELF ZENER DIODE color bands blue
diode RGP 15J
sb050 d 331
s104 diode 87a
252 B34 SMD ZENER DIODE
SB050 transistor equivalent
MELF DIODE color bands
smd transistor P2D
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SFH 910
Abstract: SFH 910 235 K SFH 910 foto transistor bar code phototransistor Q62702-P866 Q62902-B166 SLOTTED OPTICAL SWITCH 631 SFH910 SLOTTED OPTICAL SWITCH
Text: SFH 900 SFH 900 feo06270 Miniatur-Reflexlichtschranken Miniature Light Reflection Switches Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale Features ● Reflexlichtschranken für den Nahbereich ●
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feo06270
Q62902-B166)
SFH 910
SFH 910 235
K SFH 910
foto transistor
bar code phototransistor
Q62702-P866
Q62902-B166
SLOTTED OPTICAL SWITCH 631
SFH910
SLOTTED OPTICAL SWITCH
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Untitled
Abstract: No abstract text available
Text: PD - 9.529B IRCZ44 HEXFET Power MOSFET l l l l l l Dynamic dv/dt Rating Current Sense 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements VDSS = 60V RDS on = 0.028Ω ID = 50*A Description Third Generation HEXFETs from International Rectifier provide the designer with
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IRCZ44
08-Mar-07
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Thyristor MCD
Abstract: mdc 90-12 ABB thyristor modules 90-08io8 DIODE REDRESSEMENT mcd 132
Text: A S E A BROüJN/ABB ~fl3 FI Dcmfl30ó QQoans E F SEMICON • Netz-Thyristor-Diode-Module _ _ 1 T— 25-23 S 3 f£ v ~ : B ES Phase control Thyristor-Diode-Modules Daten pro Diode Oder Thyristor/ data per diode or thyristor/ les caractéristiques se rapportent à 1 diode ou à 1 thyristor
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K21-0120
K21-0180
K41-0150
K41-0150
Thyristor MCD
mdc 90-12
ABB thyristor modules
90-08io8
DIODE REDRESSEMENT
mcd 132
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MDD 42-12-N1
Abstract: No abstract text available
Text: a s e a BRO üJN/ABB s e m i c o n Netz-Dioden-Module A3 D I GDMfl3Dfl □ □ □ D l ñ S T jp» •= 1 J - Diode Modules for mains frequency Daten pro D iode/data per diode /le s caractéristiques se rapportent à 1 diode I frms V rhm Ifavm l2t 10 ms
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K21-0120'
K21-0120
K21-0180
K21-0265
DD165,
DD220
MDD 42-12-N1
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1058760000
Abstract: 1011100000 1011180000 1011120000 9537550000 0338000000
Text: WTR 2.5 D WTR 2.5 Disconnect Terminals with 2 test sockets StB 2.3 with diode plug and with diode plug 2.3 test socket (StB) 9 / i \ 'A it Polarity base from view of closed side P lu g Lever Lever Polarity base from view of closed side P lu g Terminal Block Selection Data
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TL190
Abstract: No abstract text available
Text: TOX 9004 Gallium Aluminum Arsenide Infrared-Emitting Diode DESCRIPTION FEATURES The TOX 9004 is a GaAIAs emitter designed to emit near-infrared radiation when forward biased. • • • • • Output spectrally compatible with silicon sensors Typical applications include card readers,
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MIL-S-19500,
OX9004TX
tL190)
PL335)
TL190
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Untitled
Abstract: No abstract text available
Text: TOX 9004 Gallium Aluminum Arsenide Infrared-Emitting Diode mm I lllll I W # l Texas Optoelectronics, Inc. DESCRIPTION FEATURES The TOX 9004 is a GaAIAs emitter designed to emit near-infrared radiation when forward biased. • • • • • Output spectrally compatiblte with silicon
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MIL-S-19500,
OX9004TX
G00D524
10J65)
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diode 9004
Abstract: TQX9004TX Corning 7052
Text: TE XAS OP TO EL EC TR ON IC S INC IDE D | 6^3=134 OOOOCHM fl | w/ / / / / mmW V i ff TOX 9004 Gallium Aluminum Arsenide Infrared-Emitting Diode Texas O p to e le ctro nics, Inc. DESCRIPTION FEATURES • The TOX 9004 is a GaAIAs emitter designed to em it near-infrared radiation when forward
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TQX9004TX.
MIL-STD-750
diode 9004
TQX9004TX
Corning 7052
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diode nomenclature
Abstract: cehco 600v plating phase rectifier diagram 400 amp SCR used for welding rectifier CEHCO DIODES Holmes Co IR diode 94d diode R 107 diodes transformer ohmmeter circuit diagram ohmmeter circuit diagram
Text: 4537491 HOLMES CARL E CO 94D 00029 SECTION 1. COMPONENTS ^ Silicon Diode Rectifiers S TU D M O U N TE D D IO D E S POLARITY ANODE Rectifier diodes are used to convert alternating current into direct current. Silicon is the preferred material for rectifier diodes because of its efficiency
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000002T
diode nomenclature
cehco
600v plating phase rectifier diagram
400 amp SCR used for welding rectifier
CEHCO DIODES
Holmes Co
IR diode 94d
diode R 107 diodes
transformer ohmmeter circuit diagram
ohmmeter circuit diagram
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diode 9004
Abstract: RADIOTRON rca socket rca company 9004
Text: 9004 U-H-F DIODE ACORN TYPE H eater Coated U n ip o te n t ia l Cathode a -c o r d~c vol t s V o lt a g e 6 .3 amp. C u rre n t 0 .1 5 D ir e c t in t e r e le c t r o d e C a p a c it a n c e s :0 P la t e to Cathode 1.3 Mpf P la t e to H eater 0 .3 approx.
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92C-6353RI
92C-6353R1
92C-6383
diode 9004
RADIOTRON
rca socket
rca company
9004
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logos 4012B
Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
Text: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX
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TDA1510
TDA1510A
logos 4012B
1LB553
Rauland ETS-003
Silec Semiconductors
MCP 7833
4057A
transistor sr52
74c912
1TK552
74S485
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MDD 42-12-N1
Abstract: MDD 25-08 n1 mdd 42 mdd 90-04 DIODE REDRESSEMENT 12nl MDD165 mdd 42-08 ASEA abb diode MDD 65
Text: A S E A BROüJN/ABB A3 SENICOR Netz-Dioden-Module D I 004030a 00001ÖS T | Diode Modules for mains frequency D aten pro D io d e / d a ta p er d io d e /fe s ca ra cté ristiq u e s s e rap porten t à 1 d iod e V rhm If r m s 10 ms 8,3 m s Typ/type V A A
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100-C
K21-0265
K21-0120
K21-0180
K21-0120'
MDD 42-12-N1
MDD 25-08 n1
mdd 42
mdd 90-04
DIODE REDRESSEMENT
12nl
MDD165
mdd 42-08
ASEA abb diode
MDD 65
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design a BCD counter using j-k flipflop
Abstract: TTL 9020 JK flipflop 9001 9020 ttl 9000 ttl internal diagram of jk flipflop 9022 9022 ttl 335 16 pin ttl 9022xc
Text: TTL/SSI • 9000 SER IES JK FLIP-FLO PS - 9000, 9001 DUAL JK FLIP-FLO PS - 9020, 9022 D E S C R IP T IO N — Th e T T L 90 00 series has four flip-flops to satisfy the storage requirements of a logic system . A ll are master/slave J K designs and have the same high speed and high noise im m unity as the rest of the 90 00 series. As w ith the gates, all inputs have diode clamps to reduce
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don22.
design a BCD counter using j-k flipflop
TTL 9020
JK flipflop 9001
9020 ttl
9000 ttl
internal diagram of jk flipflop
9022
9022 ttl
335 16 pin ttl
9022xc
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MC1117
Abstract: MC1116 IVI01118 IVIC1116 IVIC111IV1C111T IVIC111S 100KC ScansUX1007 MC1118
Text: MOTOROLA B O X 9 5 5 • P H O E N I X 1. IV IC 11 1 6 A R I Z O N A IV IC 1 1 1 8 MULTI-DIODE GATES fo r COMPUTER MEMORY APPLICATIONS SILICON INTEGRATED CIRCUIT MEMORY DIODES • M e d iu m C u r r e n t R ange lF= 3 0 0 m A d c • H ig h -S p e e d R e c o v e ry T im e
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IVIC1116
MC1116
MC1117
MC1118
300mAdc,
60mAdc,
IVIC111S
IVIC111IV1C111T,
IVI01118
1-MC1116
MC1117
MC1116
IVIC111IV1C111T
100KC
ScansUX1007
MC1118
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ZENER A16
Abstract: No abstract text available
Text: OM9001SS OM9003SS OM9002SS OM9004SS POWER MOSFET AND HIGH EFFICIENCY RECTIFIER IN A SINGLE HERMETIC ISOLATED SIP PACKAGE 100V Thru 500V, Up To 30 Amp, N-Channel MOSFET With Back To Back Zener Gate Clamp Protection And Uncommitted Ultra-Fast Recovery 35 To 50 nsec Rectifier
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OM9001SS
OM9003SS
OM9002SS
OM9004SS
ZENER A16
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