MUR840
Abstract: ultrafast recovery dual rectifier RHRP8120 RHRU100120 Hyperfast Diode 1200V RURG8060 smps design 32V MUR1520 MUR820 RURD420
Text: FO-011.2 5/12/00 12:09 PM Page 1 I N T E R S I L C O R P O R AT I O N B U I L D I N G S I L I C O N A D V A N TA G E S F O R T EC H N O LO GY U LT R A F A S T A N D H Y P E R F A S T RECTIFIERS Intersil Corporation provides the silicon advantage in a burgeoning market
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FO-011
O-218
O-204AA
O-220
Rating/10
MS012AA
O-262,
O-263
O-264X
MUR840
ultrafast recovery dual rectifier
RHRP8120
RHRU100120
Hyperfast Diode 1200V
RURG8060
smps design 32V
MUR1520
MUR820
RURD420
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD BYC8 DIODE ULTRAFAST, LOW SWITCHING LOSS RECTIFIER DIODE DESCRIPTION The UTC BYC8 is a rectifier diode. It provides the designers with ultra-fast switching and low switching loss in associated MOSFET. The UTC BYC8 is generally applied in continuous current
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O-220-2
QW-R601-025
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L03N60
Abstract: PG-TO220-3-31 TRANSISTOR SMD MARKING CODE 1v mj 4043 Infineon MOSFET 1000V MS 25231 LAMP RG80 PG-TO-220-3-31 PG-TO25
Text: ILA03N60, ILP03N60 ILD03N60 ^ LightMOS Power Transistor C • • • • • • • • • New high voltage technology designed for ZVS-switching in lamp ballasts IGBT with integrated reverse diode 4A current rating for reverse diode Up to 10 times lower gate capacitance than MOSFET
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ILA03N60,
ILP03N60
ILD03N60
PG-TO-220-3-31
O-220
PG-TO-220-3-1
O-220AB)
PG-TO-252-3-1
O-252AA)
ILA03N60
L03N60
PG-TO220-3-31
TRANSISTOR SMD MARKING CODE 1v
mj 4043
Infineon MOSFET 1000V
MS 25231 LAMP
RG80
PG-TO-220-3-31
PG-TO25
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Q67040-S4628
Abstract: ic 5304 1a Q67040-S4626 ILA03N60 ILB03N60 ILD03N60 ILP03N60 IC 4043 configuration
Text: ILA03N60, ILP03N60 ILB03N60, ILD03N60 ^ LightMOS Power Transistor C • • • • • • • New high voltage technology designed for ZVS-switching in lamp ballasts IGBT with integrated reverse diode 4A current rating for reverse diode Up to 10 times lower gate capacitance than MOSFET
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ILA03N60,
ILP03N60
ILB03N60,
ILD03N60
P-TO-220-3-1
O-220AB)
ILA03N60
ILB03N60
Q67040-S4628
ic 5304 1a
Q67040-S4626
ILA03N60
ILB03N60
ILD03N60
ILP03N60
IC 4043 configuration
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RGT8BM65D
Abstract: No abstract text available
Text: RGT8BM65D Data Sheet 650V 4A Field Stop Trench IGBT lOutline VCES 650V IC 100°C 4A VCE(sat) (Typ.) 1.65V PD 62W TO-252 (2) (1) (3) lFeatures lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate (2) Collector (3) Emitter 2) Low Switching Loss
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RGT8BM65D
O-252
R1102A
RGT8BM65D
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g04n60
Abstract: No abstract text available
Text: SGP04N60 SGD04N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls G - Inverter • NPT-Technology for 600V applications offers:
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SGP04N60
SGD04N60
PG-TO-252-3-1
PG-TO-220-3-1
O-252AA)
O-220AB)
SGD04N60
g04n60
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G04N60
Abstract: SGD04N60 PG-TO-220-3-1 P-TO252-3-11 SGP04N60
Text: SGP04N60 SGD04N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation C combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls G E - Inverter • NPT-Technology for 600V applications offers:
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SGP04N60
SGD04N60
PG-TO-220-3-1
PG-TO-252-3-1
O-220AB)
O-252AA)
G04N60
SGD04N60
PG-TO-220-3-1
P-TO252-3-11
SGP04N60
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G04N60
Abstract: No abstract text available
Text: SGP04N60 SGD04N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation C combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls G E - Inverter • NPT-Technology for 600V applications offers:
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SGP04N60
SGD04N60
PG-TO-220-3-1
PG-TO-252-3-1
O-220AB)
O-252AA)
SGD04N60
G04N60
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ic 0941
Abstract: SGD04N60 P-TO252 SGB04N60 SGP04N60 SGU04N60 DIODE 3A 1000V
Text: SGP04N60, SGB04N60 SGD04N60, SGU04N60 Fast S-IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:
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SGP04N60,
SGB04N60
SGD04N60,
SGU04N60
O-220AB
Q67041-A4708-A2
O-263AB
Q67041-A4708-A4
SGD04N60
ic 0941
SGD04N60
P-TO252
SGB04N60
SGP04N60
SGU04N60
DIODE 3A 1000V
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G04N60
Abstract: No abstract text available
Text: SGP04N60 SGD04N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls G - Inverter • NPT-Technology for 600V applications offers:
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SGP04N60
SGD04N60
PG-TO-252-3-1
PG-TO-220-3-1
O-252AA)
O-220AB)
SGD04N60
G04N60
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 8N40 Preliminary Power MOSFET 8A, 400V N-CHANNEL POWER MOSFET 1 TO-220 DESCRIPTION The UTC 8N40 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a
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O-220
O-220F1
QW-R502-577
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diode 8a 400V TO252
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 8N40 Preliminary Power MOSFET 8A, 400V N-CHANNEL POWER MOSFET 1 TO-220 DESCRIPTION The UTC 8N40 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a
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O-220
O-220F
QW-R502-577
diode 8a 400V TO252
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SGU04N60
Abstract: No abstract text available
Text: SGP04N60, SGB04N60 SGD04N60, SGU04N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:
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SGP04N60,
SGB04N60
SGD04N60,
SGU04N60
SGP04N60
SGD04N60
SGU04N60
O-220AB
O-263AB
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ic 0941
Abstract: SGB04N60 SGD04N60 SGP04N60 SGU04N60 Q67040-S4442
Text: SGP04N60, SGD04N60, SGB04N60 SGU04N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:
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SGP04N60,
SGD04N60,
SGB04N60
SGU04N60
P-TO-252-3-1
O-252AA)
P-TO-220-3-1
O-220AB)
P-TO-251-3-1
O-251AA)
ic 0941
SGB04N60
SGD04N60
SGP04N60
SGU04N60
Q67040-S4442
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Untitled
Abstract: No abstract text available
Text: IGBT IKD04N60R Datasheet IndustrialPowerControl IKD04N60R
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IKD04N60R
20kHz
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IKD04N60RA
Abstract: No abstract text available
Text: IGBT IKD04N60RA Datasheet IndustrialPowerControl IKD04N60RA
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IKD04N60RA
technologyfor600V
Operatingrangeof1to20kHz
Maximumjunctiontemperature175
QualifiedaccordingtoAECQ101
forPG-TO252
temperature260
IKD04N60RA
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AOD9N40
Abstract: No abstract text available
Text: AOD9N40 400V,8A N-Channel MOSFET General Description Product Summary The AOD9N40 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC -DC applications.By providing low RDS on , Ciss and Crss along
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AOD9N40
AOD9N40
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Untitled
Abstract: No abstract text available
Text: AOD9N40 400V,8A N-Channel MOSFET General Description Product Summary The AOD9N40 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC -DC applications.By providing low RDS on , Ciss and Crss along
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AOD9N40
AOD9N40
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Untitled
Abstract: No abstract text available
Text: IGBT IKD04N60RF Datasheet IndustrialPowerControl IKD04N60RF TRENCHSTOPTMRC-DrivesFastSeries
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IKD04N60RF
30kHz
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FGD2N40
Abstract: FGD2N40L
Text: FGD2N40L 400V N-Channel Logic Level IGBT Features General Description VCE SAT = 1.6V @ IC = 2.5A, VGE = 2.4V This N-Channel IGBT is a MOS gated, logic level device which has been especially tailored for small engine ignition applications. The gate is ESD protected with a zener diode.
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FGD2N40L
O-252
FGD2N40L
FGD2N40
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IRU1239SC
Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK
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100MT160PAPBF
100MT160PA
100MT160PBPBF
IRU1239SC
iru1239
Full-bridge IR2110
Class-D ir2010
PWM IR2112 IRF540
ir21065
full bridge ir2110
h-bridge irfz44n
IRVCM10A
600V 300A igbt dc to dc boost converter
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Untitled
Abstract: No abstract text available
Text: ILP03N60, ILB03N60 ILD03N60 ^ LightMOS Power Transistor C • • • • New revolutionary high voltage technology designed for ZVSswitching in lamp ballasts IGBT with integrated reverse diode Avalanche rated 150°C operating temperature P-TO-220-3-1 TO-220AB
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ILP03N60,
ILB03N60
ILD03N60
P-TO-220-3-1
O-220AB)
P-TO-263-3-2
O-263AB)
P-TO-252-3-1
O-252AA)
ILP03N60
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ILA03N60
Abstract: ILB03N60 ILD03N60 ILP03N60 Q67040-S4626 Q67040-S4628
Text: ILA03N60, ILP03N60 ILB03N60, ILD03N60 ^ LightMOS Power Transistor C • • • • • • • New high voltage technology designed for ZVS-switching in lamp ballasts IGBT with integrated reverse diode 4A current rating for reverse diode Up to 10 times lower gate capacitance than MOSFET
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ILA03N60,
ILP03N60
ILB03N60,
ILD03N60
P-TO-220-3-1
O-220AB)
ILA03N60
ILB03N60
ILA03N60
ILB03N60
ILD03N60
ILP03N60
Q67040-S4626
Q67040-S4628
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g10n60
Abstract: No abstract text available
Text: SGP02N60 SGD02N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:
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SGP02N60
SGD02N60
PG-TO-252-3-1
PG-TO-220-3-1
O-252AA)
O-220AB)
SGD02N60
g10n60
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