st 393
Abstract: STTH8R04 STTH8R04D STTH8R04DI STTH8R04FP STTH8R04G STTH8R04G-TR
Text: STTH8R04 Ultrafast recovery diode Main product characteristics IF AV 8A VRRM 400 V Tj (max) 175° C VF (typ) 0.9 V trr (typ) 25 ns A K K • Very low switching losses ■ High frequency and high pulsed current operation ■ High junction temperature TO-220FPAC
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STTH8R04
O-220AC
STTH8R04D
O-220FPAC
STTH8R04FP
O-220AC
STTH8R04G
STTH8R04DI
st 393
STTH8R04
STTH8R04D
STTH8R04DI
STTH8R04FP
STTH8R04G
STTH8R04G-TR
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IRGB4060D
Abstract: IRF1010 CT4-15
Text: PD - 97073B IRGB4060DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA
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97073B
IRGB4060DPbF
O-220AB
IRGB4060D
IRF1010
CT4-15
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IRF1010
Abstract: 8A2021
Text: PD - 97073B IRGB4060DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA
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97073B
IRGB4060DPbF
IRF1010
O-220AB
IRF1010
8A2021
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Untitled
Abstract: No abstract text available
Text: PD - 97073 IRGB4060DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA
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IRGB4060DPbF
IRF1010
O-220AB
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BB2L
Abstract: STTA812D STTA812DI STTA812G
Text: STTA812D/DI/G TURBOSWITCH ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS 8A VRRM 1200V trr typ 50ns VF (max) 2.0V K A IF(AV) A A FEATURES AND BENEFITS K ULTRA-FAST, SOFT AND NOISE-FREE RECOVERY. VERY LOW OVERALL POWER LOSSES IN
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STTA812D/DI/G
O-220AC
STTA812DI
STTA812D
STTA812G
BB2L
STTA812D
STTA812DI
STTA812G
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IRF840
Abstract: ISL9R860S3S TB334
Text: ISL9R860S3S May 2001 Data Sheet itle UF7 3P F76 D3 bA, V, 22 m, an- 8A, 600V Stealth Diode Features The ISL9R860S3S is a Stealth™ diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse
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ISL9R860S3S
ISL9R860S3S
IRF840
TB334
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STTA806DI
Abstract: STTA806D STTA806G STTA806G-TR
Text: STTA806D/DI/G TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS IF AV 8A VRRM 600V trr (typ) 25ns VF (max) 1.5V K • ■ ■ ■ K Insulated TO-220AC STTA806DI TO-220AC STTA806D FEATURES AND BENEFITS ■ A A K SPECIFIC TO “FREEWHEEL MODE” OPERATIONS:
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STTA806D/DI/G
O-220AC
STTA806DI
STTA806D
2500VRMS
STTA806G
STTA806DI
STTA806D
STTA806G
STTA806G-TR
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F60SA60DS
Abstract: working of ups mosfet 200A FFPF60SA60DS
Text: FFPF60SA60DS Features • • • • • Soft Recovery tb / ta > 1.2 Fast Recovery (trr < 25ns) Reverse Voltage, 600V Forward Voltage (@ TC = 125°C), < 2.0 V Enhanced Avalanche Energy TO-220F-3L Applications • • • • • • 1 2 3 1 2 3 Switch Mode Power Supplies
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FFPF60SA60DS
O-220F-3L
FFPF60SA60DS
O-220F-3
FFPF60SA60DSTU
F60SA60DS
working of ups
mosfet 200A
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TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE
Abstract: STTA812D STTA812DI STTA812G STTA812G-TR
Text: STTA812D/DI/G TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF AV 8A VRRM 1200V trr (typ) 50ns VF (max) 2.0V K A A K K TO-220AC Ins. STTA812DI TO-220AC STTA812D FEATURES AND BENEFITS ULTRA-FAST, SOFT RECOVERY. VERY LOW OVERALL POWER LOSSES IN
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STTA812D/DI/G
O-220AC
STTA812DI
O-220AC
STTA812D
2500VRMS
STTA812G
TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE
STTA812D
STTA812DI
STTA812G
STTA812G-TR
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APT8GT60KR
Abstract: No abstract text available
Text: APT8GT60KR 600V Thunderbolt IGBT TO-220 The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed. • Low Forward Voltage Drop
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APT8GT60KR
O-220
150KHz
APT8GT60KR
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8N40
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 8N40 Preliminary Power MOSFET 8 A, 400 V N-CHANNEL POWER MOSFET 1 The UTC 8N40 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a
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O-220
O-220F1
QW-R502-577
8N40
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Untitled
Abstract: No abstract text available
Text: APT1001R6BFLL_SFLL APT1001R6BFLL APT1001R6SFLL Typical Performance Curves 8A 1.60Ω 1000V POWER MOS 7 R FREDFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ®
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APT1001R6BFLL
APT1001R6BFLL
APT1001R6SFLL
O-247
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APT1001R6BFLL
Abstract: APT1001R6SFLL
Text: APT1001R6BFLL_SFLL APT1001R6BFLL APT1001R6SFLL Typical Performance Curves 1000V POWER MOS 7 R FREDFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT1001R6BFLL
APT1001R6BFLL
APT1001R6SFLL
O-247
O-247
APT1001R6SFLL
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STTA812D
Abstract: STTA812DI STTA812G STTA812G-TR DI 380 Transistor
Text: STTA812D/DI/G TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF AV 8A VRRM 1200V trr (typ) 50ns VF (max) 2.0V K A A K K TO-220AC Ins. STTA812DI TO-220AC STTA812D FEATURES AND BENEFITS • ■ ■ ■ ■ ULTRA-FAST, SOFT RECOVERY.
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STTA812D/DI/G
O-220AC
STTA812DI
O-220AC
STTA812D
2500VRMS
STTA812G
STTA812D
STTA812DI
STTA812G
STTA812G-TR
DI 380 Transistor
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QF30AA60
Abstract: QF20AA60 TRANSISTOR JC SQD200A60 SQD300A40 SQD200A40 D 1380 Transistor SQD400BA60 20S0 sqd300a60
Text: TRANSISTOR MODULE SQD200A40/60 UL;E76102 （M） 95max 80±0.25 23 23 ● IC＝200A, 62max 48±0.25 15 （Applications） Motor Control（VVVF）, AC/DC Servo, UPS, Switching Power Supply, Ultrasonic Application 4ｰφ5.5 1 2 3 C1 E1 C1 B2 E2 VCEX＝400/600V
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SQD200A40/60
E76102
SQD200A
95max
IC200A,
62max
110Tab
30max
VCEX400/600V
QF30AA60
QF20AA60
TRANSISTOR JC
SQD200A60
SQD300A40
SQD200A40
D 1380 Transistor
SQD400BA60
20S0
sqd300a60
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Untitled
Abstract: No abstract text available
Text: CO-PAK IGBT SGS5N60RUFD FEATURES TO-220F * Short Circuit rated 10µs @TC=100°C * High Speed Switching * Low Saturation Voltage : VCE sat = 2.0 V @ IC=5A * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 37ns (Typ.) C APPLICATIONS * AC & DC Motor controls
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SGS5N60RUFD
O-220F
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SGW5N60RUFD
Abstract: No abstract text available
Text: CO-PAK IGBT SGW5N60RUFD FEATURES D2-PAK * Short Circuit rated 10µs @TC=100°C * High Speed Switching * Low Saturation Voltage : VCE sat = 2.0 V @ IC=5A * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 37ns (Typ.) C APPLICATIONS * AC & DC Motor controls
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SGW5N60RUFD
SGW5N60RUFD
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200v dc motor igbt
Abstract: SGP5N60RUFD
Text: CO-PAK IGBT SGP5N60RUFD FEATURES TO-220 * Short Circuit rated 10µs @TC=100°C * High Speed Switching * Low Saturation Voltage : VCE sat = 2.0 V @ IC=5A * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 37ns (Typ.) C APPLICATIONS * AC & DC Motor controls
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SGP5N60RUFD
O-220
200v dc motor igbt
SGP5N60RUFD
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IXYP8N90C3D1
Abstract: 8n90c
Text: Advance Technical Information IXYP8N90C3D1 900V XPTTM IGBT GenX3TM w/Diode VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 900V 8A 2.5V 130ns TO-220 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ
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IXYP8N90C3D1
IC110
130ns
O-220
IF110
062in.
8N90C3
IXYP8N90C3D1
8n90c
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806-AS
Abstract: No abstract text available
Text: DSEI 8-06A DSEI 8-06AS IFAV = 8 A VRRM = 600 V trr = 35 ns Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 640 600 DSEI 8-06A 640 600 DSEI 8-06AS Type A C TO-220 AC DSEI 8-06A C A C TO-263 AB DSEI 8-06AS NC A = Anode, C = Cathode, NC = No Connection, TAB = Cathode
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8-06AS
O-220
O-263
20090106a
806-AS
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n539
Abstract: 6A10 DIODE diode 2a05 FRI57 diode 6A10 Diode IN5398 N4003 diode k5 10-16 diode 1n5392 N5398
Text: DIODE RECTIFIERS GENERAL PURPOSE /1A • 1.SA • 2A • 3A • 8A MAXIMUN Peak Reverse Voltage PRV Max Avg Rect Current @ Half-Wave Res Load 60Hz L @Ta 1N4001 1N4002 ÌN4003 1N4004 1N4005 1N400Ó 1N4007 50 100 200 400 600 800 1000 10 1.0 1.0 Ì0 1.0 1.0
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1N4001
1N4002
N4003
1N4004
1N4005
1N400Ó
1N4007
1N5392
1N5393
1N5394
n539
6A10 DIODE
diode 2a05
FRI57
diode 6A10
Diode IN5398
diode k5 10-16
diode 1n5392
N5398
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transistor s72
Abstract: S72 Transistor KS621K40A41 transistor b 1417 transistor s70 powerex ks62
Text: PUMEVZGf KS621K40A41 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Single Darlington Transistor Module 400 Amperes/1000 Volts OUTLINE DRAWING Description: The Powerex Single Darlington Transistor Modules are high power
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KS621K40A41
Amperes/1000
transistor s72
S72 Transistor
KS621K40A41
transistor b 1417
transistor s70
powerex ks62
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transistor s68
Abstract: s66 transistor transistor S67 KS621K40 transistor b 103 1f s65 powerex ks62 KS621K4
Text: m ßfBIEK KS621K40 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S ií lQ lG D d r H n g t O n Transistor Module 400 Amperes/1000 Volts O U T L I N E DRAWING Description: The Powerex Single Darlington Transistor Modules are high power
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KS621K40
Amperes/1000
transistor s68
s66 transistor
transistor S67
KS621K40
transistor b 103
1f s65
powerex ks62
KS621K4
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oK31
Abstract: diode ed 8a
Text: OM5201ST/RT/DT OM5203ST/RT/DT OM5217ST/RT/DT OM5234ST/RT/DT OM5202ST/RT/DT OM5216ST/RT/DT OM5233ST/RT/DT HERMETIC JEDEC TO-257AA HIGH EFFICIENCY, CENTER-TAP RECTIFIER 16 Am p, 50 To 600 Volts, 35 To 50 ns trr FEATURES Very Low Forward Voltage Very Fast Recovery Time
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OM5201ST/RT/DT
OM5203ST/RT/DT
OM5217ST/RT/DT
OM5234ST/RT/DT
OM5202ST/RT/DT
OM5216ST/RT/DT
OM5233ST/RT/DT
O-257AA
MIL-S-19500,
oK31
diode ed 8a
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