HL6362MG
Abstract: HL6355MG hl6344g HL6366DG HL6750MG HL6545MG HL6348MG opnext l HL6354MG HL8341MG
Text: Oct. 2007 Guide for Red & Infrared Laser Diodes Line up Safety Considerations Be sure to avoid direct exposure of human eyes to high power laser beams emitted from laser diodes. Even though barely visible and /or invisible to the human eye, they can be quite harmful. In particular, avoid looking directly into a laser diode or collimated
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2008B
D-85622
HL6362MG
HL6355MG
hl6344g
HL6366DG
HL6750MG
HL6545MG
HL6348MG
opnext l
HL6354MG
HL8341MG
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Leader 8020 schematics Oscilloscope
Abstract: smd diode schottky code marking GW sn 16848 APPLICATION NOTE BpW77 IEC-60050 BPw104 PHOTO TRANSISTOR BPW77 BPW34 PHOTODIODE THEORY Marking Code SMD databook 2010 bpw104s
Text: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book infrared emitters and detectors vishay semiconductors vse-db0103-0810 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vse-db0103-0810
Leader 8020 schematics Oscilloscope
smd diode schottky code marking GW
sn 16848
APPLICATION NOTE BpW77
IEC-60050
BPw104
PHOTO TRANSISTOR BPW77
BPW34 PHOTODIODE THEORY
Marking Code SMD databook 2010
bpw104s
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Untitled
Abstract: No abstract text available
Text: IRF8308MPbF DirectFET Power MOSFET RoHs Compliant Containing No Lead and Bromide Typical values unless otherwise specified l Low Profile (<0.7 mm) VDSS VGS RDS(on) RDS(on) l Dual Sided Cooling Compatible 30V max ±20V max 1.9mΩ@ 10V 2.7mΩ@ 4.5V
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IRF8308MPbF
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AAT8308
Abstract: AAT8308ITS-T1
Text: AAT8308 20V P-Channel Power MOSFET General Description Features The AAT8308 is a low threshold P Channel MOSFET designed for the battery, cell phone, and PDA markets. Using AnalogicTech 's proprietary ultrahigh density Trench technology, and space saving
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AAT8308
AAT8308
AAT8308ITS-T1
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diode 8308
Abstract: TEMD6010FX01
Text: TEMD6010FX01 Vishay Semiconductors Silicon PIN Photodiode, RoHS Compliant, Released for Lead Pb -free Solder Process, AEC-Q101 Released Description TEMD6010FX01 is a high speed and high sensitive PIN photodiode in a miniature flat plastic package. It’s
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TEMD6010FX01
AEC-Q101
TEMD6010FX01
J-STD-020)
2000/53/EC,
2002/95/EC
2002/96/EC
08-Apr-05
diode 8308
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FR4 epoxy dielectric constant 4.4
Abstract: HP16500C MC100EL16 RO4003 TS8308500 TSEV8308500G HP8665 HP8663 BGA72
Text: DESCRIPTION The TSEV8308500G Evaluation Board EB is a prototype board which has been designed in order to facilitate the evaluation and the characterization of the TS8308500 device (in CBGA72) up to its 1.3 GHz full power bandwidth at up to 500 Msps in the extended temperature range.
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TSEV8308500G
TS8308500
CBGA72)
TSEV8308500G
FR4 epoxy dielectric constant 4.4
HP16500C
MC100EL16
RO4003
HP8665
HP8663
BGA72
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motorola analog ICs vol.1
Abstract: 45fs 500MSPS JTS8308500 TS81102G0 TS8308500 TSEV8308500G atmel 0825 G
Text: MAIN FEATURES ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! 8-bit resolution. 500 Msps min sampling rate. 1.3 GHz full power input bandwidth. Band Flatness: TBD Input VSWR (packaged device): TBD SINAD = 45 dB (7.2 Effective Bits), SFDR = 54 dBc @ FS = 500 Msps, FIN = 20 MHz :
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TS8308500
motorola analog ICs vol.1
45fs
500MSPS
JTS8308500
TS81102G0
TS8308500
TSEV8308500G
atmel 0825 G
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BPW16N
Abstract: CQY 24
Text: TELEFUNKEN Semiconductors BPW 16 N Silicon NPN Phototransistor Description BPW16N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are
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BPW16N
D-74025
CQY 24
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CQY 26
Abstract: BPW17N diode 8308
Text: TELEFUNKEN Semiconductors BPW 17 N Silicon NPN Phototransistor Description BPW17N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with a ± 12° lens. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are
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BPW17N
D-74025
CQY 26
diode 8308
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JE1100
Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices
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SDL-5401-G1
Abstract: SDL-5422-H1 SDL laser dbr SDL-5421-G1 SDL 5700 SDL-5431-G1 sdl 5400 SDL laser diode sdl-5400 SDL-5400-G1
Text: « ê-' •e cu E c£ S E R I E f i I • ■■■■':• 2 S ca Hw *oos %£ UP TO 200 mW CW SINGLE MODE GaAIAs LASER DIODES High power in a diffraction limited, single spatial mode beam is provided by the SDL-5400 Series laser diode. The index guided laser emits in a
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TEM00
SDL-5400
SDL-543le
6A05A:
SDL-5401-G1
SDL-5422-H1
SDL laser dbr
SDL-5421-G1
SDL 5700
SDL-5431-G1
sdl 5400
SDL laser diode
SDL-5400-G1
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Mullard Mullard quick reference guide
Abstract: CV7476 CV7143 CV8805 BZV46 CV 7476 mullard CV7099 CV7100 diode mullard germanium BYW 64 bridge rectifier
Text: The Mullard Technical Handbook i t made up of four sets of Books, each comprising several parts:Book 1 light blue Sem iconductor Devices Book 2 (orange) Valves and Tubes Book 3 (green) Com ponents, M aterials and Assem blies Book 4 (purple or dark blue)
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BZX91
1N825
1N827
1N829
1N914
1N916
1N4001G,
CV7367
1N4002G,
CV7756
Mullard Mullard quick reference guide
CV7476
CV7143
CV8805
BZV46
CV 7476 mullard
CV7099
CV7100 diode
mullard germanium
BYW 64 bridge rectifier
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bd7995
Abstract: P8243 178M15 transistor b492 TRANSISTOR BJ 131-6 P8035 sk 7443 1334 diode LM1456 LM 8361
Text: H F To X 8366IT U N E B Issue 2/8534 STR910A B26000 2000 General Wiring Diagram Figure 10.1 +28 V sense) GROUND Meter Batt. sense + Sense Isolated Ground Batt. GND O FF 28 V O FF (T X O F F ) Relays K4, K1 & K2 BATT. MODE »DC» Relays K5, K6 +8 V in GROUND
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8366IT
STR910A
B26000
B26050
B2G010
B26010
B2701D
9SM102/V4T7
bd7995
P8243
178M15
transistor b492
TRANSISTOR BJ 131-6
P8035
sk 7443
1334 diode
LM1456
LM 8361
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SDL2361H1
Abstract: SDL-2300 SDL-2352-H1 SDL-2382-P1 SDL-2360 SDL-23-10-P1 6NA8 sdl-2380 SDL-2371-H SDL laser diode manual
Text: • UP TO 4.0 WATT CW HIGH BRIGHTNESS GaAIAs LASER DIODES Key Features 4, 3, 2, 1.2, 0.5 W cw Power 500, 370, 200, 100 and 50 pm Apertures High Efficiency MOCVD Quantum Well Design Internal TEC Option For Wavelength Control High Reliability Open Heat Sink, Window, and Fiber Packages
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SDL-2300
SDL-2340,
SDL2361H1
SDL-2352-H1
SDL-2382-P1
SDL-2360
SDL-23-10-P1
6NA8
sdl-2380
SDL-2371-H
SDL laser diode manual
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fluke 785 meter
Abstract: FLUKE 87 FLUKE 29 series II multimeter Fluke 37 multimeter FLUKE 87 series II multimeter FLUKE 80 series II service manual NEDA 1604 battery 6f22 em 700 multimeter Fluke PN 614487 operating manual for NEDA 1604 6F22
Text: 87 TRUE RMS MULTIMETER f * PN 834192 August 1988 Rev. 5, 1/93 1993 John Fluke Mfg. Co., Inc. All rights reserved. Litho in U.S.A 87 TRUE RMS MULTIMETER USER’S MANUAL FLUKE. NOTICE The Fluke 87 generates and uses radio frequency energy. If it is not used according to the
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504-8eyoglu
UY23010
Nr-70-136
070-A
fluke 785 meter
FLUKE 87
FLUKE 29 series II multimeter
Fluke 37 multimeter
FLUKE 87 series II multimeter
FLUKE 80 series II service manual
NEDA 1604 battery 6f22
em 700 multimeter
Fluke PN 614487
operating manual for NEDA 1604 6F22
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s69 lf
Abstract: 4141II DEX ELECTRONICS LTD CAPACITOR 876-1421 bh 27 601 si419
Text: MC33164-3/MC34164M T I h e I C: n f i n i t e K P F L o w e r h (' 1 K I o f () \ I (. S 3V U ndervoltage P R O D U C T I O N n n o v a t i o n time after pow er returns. The MC33164-3 & MC34164-3 consist of a tem perature stable reference com parator with hysteresis, high-current clamping
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MC33164-3/MC34164M
MC3316i-3
MC34164-3
MC33164-3
02-55-i-6431;
7H-87~
s69 lf
4141II
DEX ELECTRONICS LTD CAPACITOR
876-1421
bh 27 601
si419
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LM 317 ST
Abstract: 805 SOT-89 Summit Electronics 56497 802408 876-1421
Text: T h e I P n f i n i t e o w e r I o f n n o v a t i o n P r o d u c t i o n DESCRIPTION The MC34064 is an undervoltage sensing circuit specifically designed for use as a reset controller in m icroproces sor-based systems. It offers the designer an econom ical, space efficient solution
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MC34064
LM 317 ST
805 SOT-89
Summit Electronics
56497
802408
876-1421
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
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optron
Abstract: sl 0380 sl 0380 r F63TNR FDR8308P R043
Text: FAIRCHILD SEMICONDUCTOR November 1998 tm FDR8308P Dual P-Channel, Logic Level, PowerTrench MOSFET General Description Features T he SuperSO T-8 fam ily of P-Channel Logic Level MOSFETs have been designed to provide a low profile, small footprint alternative to industry standard SO-8 little foot type product.
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FDR8308P
43iR-RÃ
optron
sl 0380
sl 0380 r
F63TNR
FDR8308P
R043
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RSN 312 H 24
Abstract: ic RSN 315 H 42 RSN 315 H 42 RSN 312 RSN 312 H 42 rsn 313 bc 574 transistor AM7905 TRANSISTOR 7905A 79M574
Text: FVellmlnaiy H Am79M57/Am79M571 /Am79M574 Metering Subscriber Line Interface Circuit Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • ■ P ro g ra m m a b le c o n s ta n t re s is tan c e feed L in e-feed c h a ra c te ris tic s in d e p e n d e n t of
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Am79M57/Am79M571
/Am79M574
RSN 312 H 24
ic RSN 315 H 42
RSN 315 H 42
RSN 312
RSN 312 H 42
rsn 313
bc 574 transistor
AM7905
TRANSISTOR 7905A
79M574
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Untitled
Abstract: No abstract text available
Text: □IE D • 001 4 51 1 MITSUBISHI 321 ■ M I T 5 (D IS C R E T E SC MITSUBISHI LASER DIODES SERIES M L 2 X X 1 FOR OPTICAL COMMUNICATION TYPE NAME DESCRIPTION FEATURES ML2XX1 • Single longitudinal mode is a h ig h -P o w e r AIGaAs sem iconductor laser which provides a stable, single transverse mode
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830-870nm
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876-1421
Abstract: No abstract text available
Text: > O LmFmiTY M i c- K o T he I n f i n i t e P h i h c: i o whr of k o I N i . n n o H s Transient I mmune Undervoltage Sensing P roducti on v a t i o n KEY DESCRIPTION Circuit D ata FEATURES FULLY CHARACTERIZED, TRANSIENT IMMUNE INPUT STAGE (See Product Highlight
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sylvania, transformer
Abstract: SYLVANIA
Text: 7E6 Sylvania Type DUODIODE MEDIUM-MU TRIODE GT EQUIVALENT 8SR7GT o mi i if Tin 8W -L-7 PH Y SIC A L S P E C IF IC A T IO N S B a s e .f . L o c k -In 8 P in
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7E6-14E6
CE4S076
sylvania, transformer
SYLVANIA
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Untitled
Abstract: No abstract text available
Text: a Preliminary Advanced Micro Devices A m 81C 176 CMOS Color Palette DISTINCTIVE CHARACTERISTICS • Triple 6-bit Digital-to-Analog Converters DACs ■ Plug-in Replacement for Inmos G171 and G176 ■ VGA hardware and software compatible ■ Clock rates up to 80 MHz
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28-pin
32-pin
RS-170A
256x18
Am81C176
WCP-12
5M-5/89-0
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