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    DIODE 8120 Search Results

    DIODE 8120 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
    CUZ16V Toshiba Electronic Devices & Storage Corporation Zener Diode, 16 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    DIODE 8120 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TA 8403 A

    Abstract: w507 FW507 MCH3312 SB1003M
    Text: FW507 Ordering number : ENN8403 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode FW507 General-Purpose Switching Device Applications Features • • Composite type with a low ON-resistance, ultrahigh-speed switching, low voltage drive, P-channel MOSFET and


    Original     		PDF FW507 ENN8403 FW507 MCH3312 SB1003M TA 8403 A w507

    GM5WA06270A

    Abstract: PT202MR0MP1 GM1WA55360A GM4BC13300AC GM4JV81200AE GM5WA05260A GM5WA05360A GM5WA06250A GM5WA06260A ISO100
    Text: Chip LEDs for Mobile Products Mobile Phone Digital Still Camera PDA SHARP High Luminosity Chip LEDs add live colors to Mobile Products In the application of mobile products, Light Emitting Diode LED is widely used for the back light or the indicator, taking advantage of


    Original     		PDF FT001K GM5WA06270A PT202MR0MP1 GM1WA55360A GM4BC13300AC GM4JV81200AE GM5WA05260A GM5WA05360A GM5WA06250A GM5WA06260A ISO100

    GMF05LC-HSF-GS08

    Abstract: LLP75-6L
    Text: GMF05LC-HSF Vishay Semiconductors 5-Line ESD-Protection Diode Array in LLP75-6L Features • • • • • Ultra compact LLP75-6L package Low package profile < 0.6 mm 5-line ESD-protection Low leakage current IR < 0.1 µA Low load capacitance of typ. 43 pF at VR = 0 V


    Original     		PDF GMF05LC-HSF LLP75-6L LLP75-6L 2002/95/EC 2002/96/EC 18-Jul-08 GMF05LC-HSF-GS08

    Untitled

    Abstract: No abstract text available
    Text: GMF05LC-HSF Vishay Semiconductors 5-Line ESD Protection Diode Array in LLP75-6L FEATURES • Ultra compact LLP75-6L package 6 5 4 • Low package profile < 0.6 mm • 5-line ESD-protection • Low leakage current IR < 0.1 A • Low load capacitance of typ. 43 pF at VR = 0 V


    Original     		PDF GMF05LC-HSF LLP75-6L LLP75-6L 2002/95/EC 2002/96/EC GMF05LC-HSF GMF05LC-Htrademarks 2011/65/EU 2002/95/EC.

    vesd05a2-03f

    Abstract: No abstract text available
    Text: VESD05A2-03F Vishay Semiconductors 2-line ESD Protection Diode in SOT490 Features • Small SOT490 package • Very low leakage current e3 • ESD protection to IEC 61000-4-2 ± 30 kV Air • ESD protection to IEC 61000-4-2 ± 20 kV (Contact) • Two line asymmetrical ESD-protection (BiAs)


    Original     		PDF VESD05A2-03F OT490 OT490 2002/95/EC 2002/96/EC 08-Apr-05 vesd05a2-03f

    Untitled

    Abstract: No abstract text available
    Text: GMF05LC-HSF Vishay Semiconductors 5-Line ESD Protection Diode Array in LLP75-6L FEATURES • Ultra compact LLP75-6L package 6 5 4 • Low package profile < 0.6 mm • 5-line ESD-protection • Low leakage current IR < 0.1 A • Low load capacitance of typ. 43 pF at VR = 0 V


    Original     		PDF GMF05LC-HSF LLP75-6L LLP75-6L 2002/95/EC 2002/96/EC GMF05LC-HSF GMF05LC-Hany 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: GMF05LC-HSF Vishay Semiconductors 5-Line ESD Protection Diode Array in LLP75-6L FEATURES • Ultra compact LLP75-6L package 6 5 4 • Low package profile < 0.6 mm • 5-line ESD-protection • Low leakage current IR < 0.1 A • Low load capacitance of typ. 43 pF at VR = 0 V


    Original     		PDF GMF05LC-HSF LLP75-6L LLP75-6L 2002/95/EC 2002/96/EC GMF05LC-HSF GMF05LC-Hhay 11-Mar-11

    VESD05A2-03F

    Abstract: No abstract text available
    Text: VESD05A2-03F Vishay Semiconductors 2-line ESD Protection Diode in SOT490 Features • Small SOT490 package • Very low leakage current e3 • ESD protection to IEC 61000-4-2 ± 30 kV Air • ESD protection to IEC 61000-4-2 ± 30 kV (Contact) • Two line asymmetrical ESD-protection (BiAs)


    Original     		PDF VESD05A2-03F OT490 OT490 2002/95/EC 2002/96/EC 08-Apr-05 VESD05A2-03F

    Untitled

    Abstract: No abstract text available
    Text: GMF05LC-HSF Vishay Semiconductors 5-Line ESD Protection Diode Array in LLP75-6L FEATURES • Ultra compact LLP75-6L package 6 5 4 • Low package profile < 0.6 mm • 5-line ESD-protection • Low leakage current IR < 0.1 A • Low load capacitance of typ. 43 pF at VR = 0 V


    Original     		PDF GMF05LC-HSF LLP75-6L LLP75-6L 2002/95/EC 2002/96/EC GMF05LC-HSF GMF05LC-Hany 18-Jul-08

    VESD05A2-03F

    Abstract: No abstract text available
    Text: VESD05A2-03F Vishay Semiconductors 2-line ESD Protection Diode in SOT490 Features • Small SOT490 package • Very low leakage current e3 • ESD protection to IEC 61000-4-2 ± 30 kV Air • ESD protection to IEC 61000-4-2 ± 20 kV (Contact) • Two line asymmetrical ESD-protection (BiAs)


    Original     		PDF VESD05A2-03F OT490 OT490 2002/95/EC 2002/96/EC D-74025 03-Mar-06 VESD05A2-03F

    Untitled

    Abstract: No abstract text available
    Text: GMF05LC-HSF Vishay Semiconductors 5-Line ESD Protection Diode Array in LLP75-6L FEATURES • Ultra compact LLP75-6L package 6 5 4 • Low package profile < 0.6 mm • 5-line ESD-protection • Low leakage current IR < 0.1 A • Low load capacitance of typ. 43 pF at VR = 0 V


    Original     		PDF GMF05LC-HSF LLP75-6L LLP75-6L 2002/95/EC 2002/96/EC 2002/95/EC. 2011/65/EU. JS709A

    SK 18752

    Abstract: SK 18751 2SC5586 SI-18752 fn651 709332a CTB-34D SLA6102 SLA4052 SI 18751
    Text: Bulletin No O03ED0 （May, 2008） SEMICONDUCTORS GENERAL CATALOG ICS TRANSISTORS THYRISTORS DIODES LEDS LE D Diode I C Thyristor Tr a n s i s t o r SANKEN ELECTRIC CO., LTD. http://www.sanken-ele.co.jp/en/index.html Warning ● The contents in this document are subject to changes, for improvement and other purposes,


    Original     		PDF O03ED0 dete7837 H1-O03ED0-0805020NM SK 18752 SK 18751 2SC5586 SI-18752 fn651 709332a CTB-34D SLA6102 SLA4052 SI 18751

    Untitled

    Abstract: No abstract text available
    Text: GMF05LC-HSF Vishay Semiconductors 5-Line ESD-Protection Diode Array in LLP75-6L Features • • • • • • • • • • • Ultra compact LLP75-6L package Low package profile < 0.6 mm 5-line ESD-protection e3 Low leakage current IR < 0.1 µA Low load capacitance of typ. 43 pF at VR = 0 V


    Original     		PDF GMF05LC-HSF LLP75-6L LLP75-6L 2002/95/EC 2002/96/EC GMF05LC-HSF GMF05s 08-Apr-05

    81200

    Abstract: No abstract text available
    Text: GMF05LC-HSF Vishay Semiconductors 5-Line ESD-Protection Diode Array in LLP75-6L Features • • • • • • • • • • • Ultra compact LLP75-6L package Low package profile < 0.6 mm 5-line ESD-protection e3 Low leakage current IR < 0.1 µA Low load capacitance of typ. 43 pF at VR = 0 V


    Original     		PDF GMF05LC-HSF LLP75-6L LLP75-6L 2002/95/EC 2002/96/EC GMF05LC-HSF GMF05any 18-Jul-08 81200

    Untitled

    Abstract: No abstract text available
    Text: スーパールミネッセントダイオード SLD L12856-04 •特長 ●高輝度 ●低コヒーレンス性 ■用途 ●光ジャイロ ●光通信 ●光応用計測装置 ■概要 SLD (Super Luminescent Diode)はレーザダイオードの高輝度とLEDの低コヒーレンス性を併せ持つ赤外発光素


    Original     		PDF L12856-04 LSLD2006J02

    SI-8120JF

    Abstract: G746 SC102 SI-8000JF SI-8120JD
    Text: SI-8120JF Data Sheet 27469.52 ih ng rs tc lato i Sw egu R Step-Down to 12.0 V, 1.5 A, DC/DC Converter Designed to meet high-current requirements at high efficiency in industrial and consumer applications; embedded core, memory, or logic supplies; TVs, VCRs, and office or telecommunications equipment, the


    Original     		PDF SI-8120JF SI-8120JF G746 SC102 SI-8000JF SI-8120JD

    SC102 diode

    Abstract: SC102 capacitor G746 SC102 SI-8000JF SI-8120JD SI-8120JF 8120j
    Text: SI-8120JF Data Sheet 27469.52* ih ng rs tc lato i Sw egu R Step-Down to 12.0 V, 1.5 A, DC/DC Converter Designed to meet high-current requirements at high efficiency in industrial and consumer applications; embedded core, memory, or logic supplies; TVs, VCRs, and office or telecommunications equipment, the


    Original     		PDF SI-8120JF SI-8120JF EI17EI SC102 diode SC102 capacitor G746 SC102 SI-8000JF SI-8120JD 8120j

    sanken transistor

    Abstract: 8120j
    Text: SI-8120JF Data Sheet 27469.52 ih ng rs tc lato i Sw egu R Step-Down to 12.0 V, 1.5 A, DC/DC Converter Designed to meet high-current requirements at high efficiency in industrial and consumer applications; embedded core, memory, or logic supplies; TVs, VCRs, and office or telecommunications equipment, the


    Original     		PDF SI-8120JF SI-8120JF sanken transistor 8120j

    RHRPB120

    Abstract: ba 10 g 8a IPV2
    Text: RHRP8120 ¡2 HARRIS S E M I C O N D U C T O R 8A, 1200V Hyperfast Diode April 1995 Package Features • Hyperfast with Soft Recovery. <55ns JE D EC TO -220A C • Operating Temperature. +175°C


    OCR Scan     		PDF RHRP8120 -220A RHRPB120 TA49096) RHRP8120 RHRPB120 ba 10 g 8a IPV2

    Untitled

    Abstract: No abstract text available
    Text: RURP8120 3 3 HARRIS S E M I C O N D U C T O R 8A, 1200V Ultrafast Diode April 1995 Features Package JEDEC TO-220AC • Ultrafast with Soft R ecovery. <100ns • Operating Tem p eratu


    OCR Scan     		PDF RURP8120 O-220AC 100ns 100ns) RURP8120

    MHW721A2

    Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA


    OCR Scan     		PDF 1PHX11136Q-14 MHW721A2 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503

    Untitled

    Abstract: No abstract text available
    Text: SANSHA ELECTRIC MFG CO 5bE D 7T T 12M 3 DDDDS'ib 02fl • SEMJ - p diode M o n m .e DF £ 1O O A B PRELIMINARY ■ MAX I MUM RATINGS ' _ Unless other* 5se T j —25T2 Syabol Item R a tin g s U n it I D F 100A 8120 R e p e t i t i v e Peak R e v e rs e V o lt a g e


    OCR Scan     		PDF 102T2 50/80Hz, A0514

    BPW 89

    Abstract: No abstract text available
    Text: TELEFUNKEN ELECTRONIC 17E D • a^SQCHfci 00Q65E4 a ■ AL66 ^ RPW 89 _ , - m § F « K l& S electronic CrMlrviTschr>oiogt*s ( ^ i f / * S * 3 i Silicon Photo PIN Diode (N-Type j Applications: Wide band detector for demodulation of fast signals, e.g. of lasers and GaAs-LED's.


    OCR Scan     		PDF 00Q65E4 5x101 BPW 89

    S219P

    Abstract: ep 1387
    Text: TELEFUNKEN ELECTRONIC 17E 1> fl^SOQ^b OOOflSflE 0 IAL66 S 219 P TStUllFMI^IN electronic CrMtn* Technotog*s - Silicon Photo PIN Diode P-Type Applications: T-Ml'53 Wide band detector for demodulation of fast signals, e.g. of lasers and GaAs-LED's. -Detector for optical communication, e. g. for optical-fiber transmission systems and


    OCR Scan     		PDF IAL66 S219P ep 1387