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    DIODE 81 BP Search Results

    DIODE 81 BP Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
    CUZ16V Toshiba Electronic Devices & Storage Corporation Zener Diode, 16 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    DIODE 81 BP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Q65110A3337

    Abstract: BPX osram GEOY6021 OHRD1938 Q62703-Q395
    Text: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter LD 261 Wesentliche Merkmale Features • • • • • • • • • • GaAs-IR-Lumineszenzdiode Hohe Zuverlässigkeit Gruppiert lieferbar Gehäusegleich mit BPX 81 Miniatur-Gehäuse GaAs infrared emitting diode


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    3LD261

    Abstract: No abstract text available
    Text: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter LD 261 Wesentliche Merkmale • GaAs-IR-Lumineszenzdiode • Hohe Zuverlässigkeit • Gruppiert lieferbar • Gehäusegleich mit BPX 81 • Miniatur-Gehäuse Features • GaAs infrared emitting diode • High reliability


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    PDF Q62703-Q395 Q62703-Q67 GEOY6021 3LD261

    OHRD1938

    Abstract: BPX osram GEOY6021 Q62703-Q395 Q62703-Q67 LD261-1
    Text: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter LD 261 Wesentliche Merkmale Features • • • • • • • • • • GaAs-IR-Lumineszenzdiode Hohe Zuverlässigkeit Gruppiert lieferbar Gehäusegleich mit BPX 81 Miniatur-Gehäuse GaAs infrared emitting diode


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    GEO06021

    Abstract: OHRD1938 Q62703-Q395 Q62703-Q67
    Text: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter LD 261 Wesentliche Merkmale • GaAs-IR-Lumineszenzdiode • Hohe Zuverlässigkeit • Gruppiert lieferbar • Gehäusegleich mit BPX 81 • Miniatur-Gehäuse Features • GaAs infrared emitting diode • High reliability


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    PDF OHR01878 GEO06021 GEO06021 OHRD1938 Q62703-Q395 Q62703-Q67

    BPX osram

    Abstract: GEOY6021 OHRD1938 Q62703-Q395 Q62703-Q67
    Text: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter LD 261 Wesentliche Merkmale Features • • • • • • • • • • GaAs-IR-Lumineszenzdiode Hohe Zuverlässigkeit Gruppiert lieferbar Gehäusegleich mit BPX 81 Miniatur-Gehäuse GaAs infrared emitting diode


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    Untitled

    Abstract: No abstract text available
    Text: 2007-03-30 GaAs Infrared Emitter GaAs-IR-Lumineszenzdiode Version 1.0 LD 261 Features: • • • • Besondere Merkmale: GaAs infrared emitting diode High reliability Same package as BPX 81 Miniature package • • • • Applications • • • • •


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    PDF D-93055

    2E14

    Abstract: 4h sic
    Text: Drift-Free, 50 A, 10 kV 4H-SiC PiN Diodes with Improved Device Yields Mrinal K. Dasa, Joseph J. Sumakeris, Brett A. Hull, Jim Richmond, Sumi Krishnaswami and Adrian R. Powell Cree, Inc., 4600 Silicon Drive, Durham, NC, 27703, USA a Mrinal_Das@Cree.com Keywords: PiN Diode, High Voltage, Vf drift, BPD, device yield


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    PDF N00014-02-C-0302, 2E14 4h sic

    OCLARO

    Abstract: ausn submount bh134
    Text: 80W 9xxnm 20% Fill Factor High Power Laser Diode Bar on Passive Cu Block Cooler BPC9xx-80C-660 & BPC10xx-80C-660 Features: • Mounted 10mm laser diode bar • Passive 1” x 1” Cu block cooler • 20% fill factor 100µm / 500 µm pitch • 80W operating power


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    PDF BPC9xx-80C-660 BPC10xx-80C-660 915nm, 940nm, 980nm 1030nm BPC10xx-80C-660 910-1070nm 21CFR OCLARO ausn submount bh134

    Q62703-Q395

    Abstract: GEO06021 OHRD1938 Q62703-Q67
    Text: 0.7 0.6 0 . 5 2.7 2.5 0.25 0.15 3.5 3.0 0.5 0.4 Chip position 1.9 1.7 2.4 2.1 LD 261 3.6 3.2 GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter 2.1 1.5 2.54 mm spacing A Radiant sensitive area 0.4 x 0.4 1.4 1.0 Collector (BPX 81) Cathode (LD 261) 1) Detaching area for tools, flash not true to size.


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    PDF GEO06021 feo06021 epi20 OHR02182 OHR01878 Q62703-Q395 GEO06021 OHRD1938 Q62703-Q67

    EE25 core

    Abstract: EE25 transformer pks606 PKS606Y ee25 10 pin transformer PKS605 fs202da PKS603-606 PKS603 EPR-93
    Text: PeakSwitch Family Enhanced, Energy-Efficient, Off-Line Switcher IC With Super Peak Power Performance JUNE 2006 TYPICAL PEAK POWER APPLICATION + AC IN DC OUT Optional Smart AC Sense D EN/UV BP PeakSwitch S Typical Applications: Inkjet Printer, Data Storage,


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    PDF PI-3995-051006 EE25 core EE25 transformer pks606 PKS606Y ee25 10 pin transformer PKS605 fs202da PKS603-606 PKS603 EPR-93

    BPX osram

    Abstract: GEOY6021 OHLY0598 OHRD1938 Q65110A3337
    Text: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Lead Pb Free Product - RoHS Compliant LD 261 Wesentliche Merkmale Features • • • • • • • • • • GaAs-IR-Lumineszenzdiode Hohe Zuverlässigkeit Gruppiert lieferbar Gehäusegleich mit BPX 81


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    ba9u

    Abstract: JM34R8
    Text: 2 D I7 5 M -1 2 0 7 6 'in — 9 ^ a > 3- - >i : Outline l£f Drawings POWER TRANSISTOR MODULE : Features • • • • 3511(81^4*'' ^' High Arm Short Circuit Capability hFE*x'S '- ' High DC Current Gain 7 U —jfc'f U V W - i =t —K l*JM Including Free Wheeling Diode


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    PDF E829S8 I95t/R89) ba9u JM34R8

    Untitled

    Abstract: No abstract text available
    Text: P O W E R E X INC m N B'lE » E N E • 72^21 0D0431G 1 * P R X _ X T - 3 3 - .S £ r K T524575 Powerex, Inc., Hlllls Street, Youngwood, Pennsylvania 75697 412 925-7272 S p l it - D u a l D a r lin g t o n Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14


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    PDF 0D0431G T524575 BP107, Amperes/600 KT524575

    Untitled

    Abstract: No abstract text available
    Text: a'JE D P O W E R E X INC • TBTMbEl ODGMBTO 3 » P R X Powerex, Inc., Hillls Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G, Durand, BP107, 72003 Le Mans, France (43) 41.14.14 KE721KA1HB High-Beta Six-Darlington Transistor Module


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    PDF BP107, KE721KA1HB Amperes/1000

    KE7245A1

    Abstract: diode 345
    Text: 3RE D POWEREX INC • 7SSMb21 Q0DM3Ô2 M H P R X mNWDL KE7245A1 Powerex, Inc., HIIHs Street, Youngwood, Pennsylvania 1S697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 Six-Darlington Transistor Module


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    PDF 7SSMb21 1S697 BP107, KE7245A1 Amperes/600 345710s diode 345

    Untitled

    Abstract: No abstract text available
    Text: BTE D POIilEREX INC m N B Œ • 7EtiMb21 QQOMB^M □ BIPRX KE7212A1 X Powerex, Inc., Hillls Street, Young wood, Pennsylvania 75697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP1Q7, 72003 Le Mans, France (43) 41.14.14 T - 3 3 - 2 S' Six-Darlington


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    PDF 7EtiMb21 KE7212A1 peres/1200 BP107, Amperes/1200

    CM200DY-12E

    Abstract: CM200DY12E
    Text: b4E m D 72T4b21 00Db744 344 * P R X CM200DY-12E Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 POWEREX INC Dual IGBTMOD £ M o d illo


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    PDF 72T4b21 00Db744 CM200DY-12E BP107, Amperes/600 CM200DY12E

    CM300DY-24E

    Abstract: L120A BP107 fjl diode AL6345-25.0.391-00
    Text: b4E D • poüierex 7E T4b 21 0G0b7Sb Obb « P R X inc Powerex, Inc., 200 Hlllls Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 CM300DY-24E DU3l IG B TMOD


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    PDF 7ET4b21 CM300DY-24E BP107, Amperes/1200 CM300DY-24 E-7-1800 CM300DY-24E L120A BP107 fjl diode AL6345-25.0.391-00

    KE721KA1

    Abstract: No abstract text available
    Text: 3SE D P 0 li EREX INC • TETMbSl D0Q43öb 1 BiPRX m M EREX KE721KA1 Powerex, Inc., Hlllls Street, Youngwood, Pennsylvania 75697 412) 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 Six-Darlington Transistor Module


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    PDF D0Q43Ã KE721KA1 BP107, Amperes/1000 KE721KA1

    CM50TF-24E

    Abstract: CM50TF24E
    Text: bME D • TBTHbSl DDGb?flfl b?b HPRX poiíerex INC CM50TF-24E Powerex, Inc., 200 Hlllis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S Í X - IG B T IG B T M O D Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14


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    PDF CM50TF-24E BP107, Amperes/1200 CM50TF-24E CM50TF24E

    ph 33j

    Abstract: No abstract text available
    Text: POUIEREX I NC m U D B tE K • TS^maSl ODGMflOl T BPRX _ ID 2 S 1 2 7 B Powerex, Inc., H lllls Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex, Europe, S.A. 428Avenue G. Durand, BP107,72003 Le Mans, France (43) 41.14.14


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    PDF 428Avenue BP107 Amperes/1200 BP107, ID221275 75Amperes/1200 ph 33j

    JS335020

    Abstract: No abstract text available
    Text: POüJEREX INC K 1SE mmatEX m 72=i4fc>21 000317=] 2 • 7 ^ 3 ?-fô Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 72.75.15 Major Ratings and Characteristics at Te = 25°C (Tj Maximum = 150?C)


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    PDF BP107, JS334520/JS335020 JS637520 JS634530/JS635030 JS335020

    Untitled

    Abstract: No abstract text available
    Text: POWEREX INC 3TE D • 7 5 ^ 2 1 m u m e x _ Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 0DG4370 fl H P R X KE7235A1 Six-Darlington


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    PDF 0DG4370 BP107, KE7235A1 Amperes/500

    Untitled

    Abstract: No abstract text available
    Text: POIilEREX INC '.3*iE D • 72=î4b21 DO OBI SS WINEREX S MPRX KS221K03 r ' Powerex, Inc., Hillls Street, Youngwood, Pennsylvania 15697 412 925-7272 Single Darlington Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 T fS H S iS t O f M o d u l e


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    PDF KS221K03 BP107, Amperes/1000