SKM75GB120D
Abstract: cmos open collector and gate SKHI 65 SKM75GB12 igbt driver SKHI 23/12 semikron SKHI 22 SEMIKRON SKHI 65 SKHI23 FERRITE TRANSFORMER igbt 6.5 kv snubber
Text: SKHI 23/12 R . power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions 7 J $) () $, () K$" #" $# E%%
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C2665
Abstract: C2668 7c26 C2662 C266 27C64 CY7C266 R1250 C2666
Text: 1CY 7C26 6 CY7C266 8Kx8 Power-Switched and Reprogrammable PROM Features Functional Description • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (military) • Low power — 660 mW (commercial)
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CY7C266
CY7C266
600-mil-wide
C2665
C2668
7c26
C2662
C266
27C64
R1250
C2666
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CERAMIC LEADLESS CHIP CARRIER
Abstract: cerdip z PACKAGE DIODE SMD A6 cy7c291 CY7C293A-30QMB PACKAGE CERAMIC LEADLESS CHIP CARRIER LCC w14 smd transistor CY7C291A CY7C292A CY7C293A
Text: 1CY 7C29 2A CY7C291A CY7C292A/CY7C293A 2K x 8 Reprogrammable PROM Features identical, but are packaged in 300-mil 7C291A, 7C293A and 600-mil wide plastic and hermetic DIP packages (7C292A). The CY7C293A has an automatic power down feature which reduces the power consumption by over 70% when deselected. The 300-mil ceramic package may be equipped with an
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CY7C291A
CY7C292A/CY7C293A
300-mil
7C291A,
7C293A)
600-mil
7C292A)
CY7C293A
300-mil
CERAMIC LEADLESS CHIP CARRIER
cerdip z PACKAGE
DIODE SMD A6
cy7c291
CY7C293A-30QMB
PACKAGE CERAMIC LEADLESS CHIP CARRIER LCC
w14 smd transistor
CY7C291A
CY7C292A
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CYPRESS 7C291A
Abstract: CY7C293AL-35PC cy7c291 CY7C291A-25WMB CY7C291A CY7C292A CY7C293A
Text: 92A CY7C291A CY7C292A/CY7C293A 2K x 8 Reprogrammable PROM Features identical, but are packaged in 300-mil 7C291A, 7C293A and 600-mil wide plastic and hermetic DIP packages (7C292A). The CY7C293A has an automatic power down feature which reduces the power consumption by over 70% when deselected. The 300-mil ceramic package may be equipped with an
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CY7C291A
CY7C292A/CY7C293A
300-mil
7C291A,
7C293A)
600-mil
7C292A)
CY7C293A
300-mil
CYPRESS 7C291A
CY7C293AL-35PC
cy7c291
CY7C291A-25WMB
CY7C291A
CY7C292A
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CY7C276-25JC
Abstract: C276 CY7C276 CY7C276-25HC C2761 CY7C276-30JC c2762 C2767
Text: 1CY 7C27 6 CY7C276 16K x 16 Reprogrammable PROM Features Functional Description • 0.8-micron CMOS for optimum speed/power The CY7C276 is a high-performance 16K-word by 16-bit CMOS PROM. It is available in a 44-pin PLCC/CLCC and a 44-pin LCC packages, and is 100% reprogrammable in windowed packages. The memory cells utilize proven EPROM
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CY7C276
CY7C276
16K-word
16-bit
44-pin
25-ns
16-bit-wide
CY7C276-25JC
C276
CY7C276-25HC
C2761
CY7C276-30JC
c2762
C2767
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C2877
Abstract: c2874 7C28 c2872 C2879 CY7C287 7C287-65 CY7C287-55WMB
Text: 1CY 7C28 7 CY7C287 64K x 8 Reprogrammable Registered PROM Features put enable that can be programmed to be synchronous ES or asynchronous (E). It is available in a 28-pin, 300-mil package. The address set-up time is 45 ns and the time from clock HIGH to output valid is 15 ns.
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CY7C287
28-pin,
300-mil
CY7C287
C2877
c2874
7C28
c2872
C2879
7C287-65
CY7C287-55WMB
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C277
Abstract: C2776 CERAMIC LEADLESS CHIP CARRIER CY7C277 C2779 C2774
Text: 1CY 7C27 7 CY7C277 32K x 8 Reprogrammable Registered PROM Features • Programmable synchronous or asynchronous output enable • Windowed for reprogrammability • On-chip edge-triggered output registers • CMOS for optimum speed/power • EPROM technology, 100% programmable
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CY7C277
300-mil,
28-pin
30-ns
15-ns
C277
C2776
CERAMIC LEADLESS CHIP CARRIER
CY7C277
C2779
C2774
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semiconductor c243
Abstract: transistor c243 CY7C243-45QMB c243 diode c2432 C2434 C2437 cerdip z PACKAGE DN2540N5-G CY7C243
Text: 1CY 7C24 4 CY7C243 CY7C244 4Kx8 Reprogrammable PROM Features Functional Description • CMOS for optimum speed/power The CY7C243 and CY7C244 are high-performance 4K x 8 CMOS PROMs. The CY7C243 and CY7C244 are packaged in 300-mil-wide and 600-mil-wide packages respectively. The reprogrammable packages are equipped with an erasure window. When exposed to UV light, these PROMs are erased and
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CY7C243
CY7C244
CY7C243
CY7C244
300-mil-wide
600-mil-wide
semiconductor c243
transistor c243
CY7C243-45QMB
c243 diode
c2432
C2434
C2437
cerdip z PACKAGE
DN2540N5-G
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SMD DIODE A13
Abstract: smd diode code A13 A13 smd smd transistor w16 CY7C251-45PC transistor smd w16 7c251 C2511 C2515 CY7C251-65WC
Text: 1CY 7C25 4 CY7C251 CY7C254 16K x 8 Power Switched and Reprogrammable PROM Features Functional Description • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 45 ns • Low power — 550 mW commercial The CY7C251 and CY7C254 are high-performance
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CY7C251
CY7C254
CY7C251
CY7C254
384-word
300-mil-wide
7C254
600-mil-wide
7C251
SMD DIODE A13
smd diode code A13
A13 smd
smd transistor w16
CY7C251-45PC
transistor smd w16
C2511
C2515
CY7C251-65WC
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CY7C225A
Abstract: No abstract text available
Text: 1CY 7C22 5A CY7C225A 512 x 8 Registered PROM Features • TTL-compatible I/O • Direct replacement for bipolar PROMs • CMOS for optimum speed/power • Capable of withstanding greater than 2001V static • High speed discharge — 18 ns address set-up Functional Description
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CY7C225A
CY7C225A
300-mil
28-pin
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C2512
Abstract: SMD DIODE A13 7C251 smd diode code a8 C2514 smd diode code A13 CY7C251 CY7C254 CY7C251-55 C25-12
Text: CY7C251 CY7C254 Features A9 1 28 VCC A8 2 27 A10 A7 3 26 A11 A6 4 25 A12 A5 5 24 A13 A4 6 23 CS1 A3 7 22 CS2 A2 8 21 CS3 A1 9 7C254 20 CS4 A0 10 19 O7 O0 11 18 O6 O1 12 17 O5 O2 13 16 O4 GND 14 15 O3 A12 512 x 256 X O5 A8 A7 A6 O4 ADDRESS DECODER A4 O3 A3
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CY7C251
CY7C254
7C254
C251-2
C251-1
C2512
SMD DIODE A13
7C251
smd diode code a8
C2514
smd diode code A13
CY7C251
CY7C254
CY7C251-55
C25-12
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CY7C235A
Abstract: No abstract text available
Text: 1CY 7C23 5A CY7C235A 1K x 8 Registered PROM Features • Direct replacement for bipolar PROMs • Capable of withstanding greater than 2001V static discharge • CMOS for optimum speed/power • High speed Functional Description — 18 ns address set-up The CY7C235A is a high-performance 1024 word by 8 bit electrically programmable read only memory packaged in a slim
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CY7C235A
CY7C235A
300-mil
28-pin
CY7C23or
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C2613
Abstract: C2614 c2615 C2611 C2617 7C261 7C264 CY7C261 CY7C263 CY7C264
Text: CY7C261 CY7C263/CY7C264 8K x 8 Power-Switched and Reprogrammable PROM Features Functional Description The CY7C261, CY7C263, and CY7C264 are high-performance 8192-word by 8-bit CMOS PROMs. When deselected, the 7C261 automatically powers down into a low-power standby mode. It is packaged in a 300-mil-wide package. The 7C263
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CY7C261
CY7C263/CY7C264
CY7C261,
CY7C263,
CY7C264
8192-word
7C261
300-mil-wide
7C263
7C264
C2613
C2614
c2615
C2611
C2617
CY7C261
CY7C263
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C2614
Abstract: CY7C264 7C261 7C264 CY7C261 CY7C263 C2612 C2611 C261-4 MIL-STD-1835C-4
Text: CY7C261 CY7C263/CY7C264 D Features PROMs 20 ns commercial Functional Description 25 ns (military) Low power 660 mW (commercial) 770 mW (military) Super low standby power (7C261) Less than 220 mW when deselected Fast access: 20 ns EPROM technology 100% programĆ
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CY7C261
CY7C263/CY7C264
7C261)
300mil
600mil
C2614
CY7C264
7C261
7C264
CY7C261
CY7C263
C2612
C2611
C261-4
MIL-STD-1835C-4
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Untitled
Abstract: No abstract text available
Text: SEMiX 353GB176HD +,- # Absolute Maximum Ratings Symbol Conditions IGBT . )+ , 1 . '+ , 145 '0( 2+( " 3( , )+( " 7+( " 9 )( . ')+ , '( > )+ , 7)+ " 3( , )3+ " 7+( " '3( " :( " A 7( @@@ B '+(
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353GB176HD
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Untitled
Abstract: No abstract text available
Text: SEMiX 302GB176HD Absolute Maximum Ratings Symbol Conditions IGBT . + , 1 . '+ , 145 )+,- # '0( 2(+ " 3( , )( " 7( " 9 )( '( = )+ , 23+ " 3( , )?( " 7( " )( " ?( " A 7( @@@ B '+( ,
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302GB176HD
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Untitled
Abstract: No abstract text available
Text: SEMiX 302GB176HD Absolute Maximum Ratings Symbol Conditions IGBT . + , 1 . '+ , 145 )+,- # '0( 2(+ " 3( , )( " 7( " 9 )( . ')+ , '( > )+ , 23+ " 3( , ):( " 7( " )( " :( " A 7( @@@ B '+(
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302GB176HD
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Thyristor Xo 602 MA
Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Text: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and
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diode U3J
Abstract: Smd diode u3j csi24 CY7C292A-20DC CY7C291A-35DMB
Text: CY7C291A CY7C292A/CY7C293A P Yi.PX : V«*1 2K X 8 Reprogrammable PROM identical, but are packaged in 300-mil 7C291A, 7C293A and 600-mil wide plastic and hermetic DIP packages (7C292A). The CY7C293A has an automatic power down feature which reduces the power consumption by over 70% when deselect
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300-mil
600-mil
CY7C291A
CY7C292A/CY7C293A
300-mil
7C291A,
7C293A)
7C292A)
CY7C293A
diode U3J
Smd diode u3j
csi24
CY7C292A-20DC
CY7C291A-35DMB
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3Cs 6 PIN SMD CHIP
Abstract: AFL smd code CY7C251 CY7C251-45PC Programming SMD code l32 u1p smd 7C251 CY7C254 W2265
Text: -c PRESS MbE D SEMICONDUCTOR • ^ 2 5 0 = ^ 2 0QGb7b7 1 , - if CYPRESS SEMICONDUCTOR Features • CMOS for optimum speed/power • Windowed Tor reprogrammability • Highspeed — 45 ns • Low power — 550 mW commercial — 660 mW (military) • Super low standby power (7C251)
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CY7C251
CY7C254
7C251)
300-mil
600-mll
CY7C251
CY7C254
16384-word
CY7C251-65WMB
CY7C251-65TMB
3Cs 6 PIN SMD CHIP
AFL smd code
CY7C251-45PC
Programming
SMD code l32
u1p smd
7C251
W2265
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A15C
Abstract: CY7C287 CY7C287-55PC LCOS uv
Text: CY7C286 CY7C287 Features • Capable of withstanding >2001V static discharge • CMOS for optimum speed/power • Windowed for reprogrammability Functional Description • High speed — tSA = 45 ns 7C287 — tco = 15 ns (7C287) — tACC = 50 ns (7C286)
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CY7C286
CY7C287
7C287)
7C286)
7C287
300-mil
A15C
CY7C287
CY7C287-55PC
LCOS uv
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Untitled
Abstract: No abstract text available
Text: CY7C277 CY7C279 CYPRESS SEMICONDUCTOR Features Reprogrammable 32K x 8 Registered PROM Programmable address latch enable input Programmable synchronous or asynchronous output enable 7C277 On-chip edge-triggered output registers (7C277) Optional registered/latched address
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CY7C277
CY7C279
7C277)
7C279)
300-mil,
28-pin
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aj4 diode
Abstract: CY7C277 658f 7C277
Text: CYPRESS 4bE SEMICONDUCTOR J /s S - I SSfl'lbbS GG0bôb3 fl B C Y P D CY7C277 CY7C279 CYPRESS SEMICONDUCTOR Reprogrammable 32K x 8 Registered PROM Programmable address latch enable input Programmable synchronous or asynchronous output enable 7C277 On-chip edge-triggered output
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00Dbflb3
CY7C277
CY7C279
7C277)
7C279)
aj4 diode
658f
7C277
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APC UPS es 500 CIRCUIT DIAGRAM
Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
Text: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.
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ADE-408
50502C
APC UPS es 500 CIRCUIT DIAGRAM
sk 100 gale 065 tf
2SK1058 MOSFET APPLICATION NOTES
APC UPS CIRCUIT DIAGRAM es 725
General Instrument data book
2SK2264
ESI 252 impedance meter
transistor bf 175
PF0144
2SK212
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