BAP51-02
Abstract: smd diode S4 diode S4 05 AS 15 f
Text: LESHAN RADIO COMPANY, LTD. General purpose PIN diode BAP51 – 02 FEATURES • Low diode capacitance · Low diode forward resistance. APPLICATIONS · General RF applications. DESCRIPTION General purpose PIN diode in a SOD523 small SMD plastic package. 1 2 SOD523 SC-79
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BAP51
OD523
SC-79
BAP51-02
smd diode S4
diode S4 05
AS 15 f
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DIODE S4 74
Abstract: BAP50 BAP50-02 diode DB 3 C
Text: General purpose PIN diode BAP50 – 02 FEATURES • Low diode capacitance · Low diode forward resistance. APPLICATIONS · General RF applications. DESCRIPTION General purpose PIN diode in a SOD523 small SMD plastic package. 1 2 SOD523 SC-79 1 CATHODE 2 ANODE
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BAP50
OD523
SC-79
DIODE S4 74
BAP50
BAP50-02
diode DB 3 C
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diode DB 3 C
Abstract: BAP50 BAP50-02
Text: LESHAN RADIO COMPANY, LTD. General purpose PIN diode BAP50 – 02 FEATURES • Low diode capacitance · Low diode forward resistance. APPLICATIONS · General RF applications. DESCRIPTION General purpose PIN diode in a SOD523 small SMD plastic package. 1 2 SOD523 SC-79
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BAP50
OD523
SC-79
diode DB 3 C
BAP50
BAP50-02
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diode S4 05
Abstract: smd diode S4 diode smd JS 8 BAP51-02
Text: General purpose PIN diode BAP51 – 02 FEATURES • Low diode capacitance · Low diode forward resistance. APPLICATIONS · General RF applications. DESCRIPTION General purpose PIN diode in a SOD523 small SMD plastic package. 1 2 SOD523 SC-79 1 CATHODE 2 ANODE
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BAP51
OD523
SC-79
diode S4 05
smd diode S4
diode smd JS 8
BAP51-02
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792gb170
Abstract: UDC 1700
Text: SKiiP 792 GB 170 - 373 CTV Absolute Maximum Ratings Symbol Visol 4 Top ,Tstg 1) Conditions AC, 1min Operating / stor. temperature Values 4000 -25.+85 IGBT and Inverse Diode VCES VCC 5) Operating DC link voltage IC IGBT Tj 3) IGBT + Diode IF Diode IFM Diode, tp < 1 ms
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IGBT11)
Rthjs10)
792gb170
UDC 1700
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1N5411
Abstract: 1N5760 DIODE GE 103717 1N5758 1N5761 germanium motorola 2n491 1N5759 Hitron
Text: PART NUMBER INDEX Part Number Manufacturer 1N3299 AmerMicroSC Mcrwv Diode 1N3300 AmerMicroSC Mcrwv Diode 1N3300A AmerMicroSC 1N3301 Mcrwv Diode 1N3301 A 1N3302 Mcrwv Diode 1N3302A 1N3303 CrimsonSemi 1N3303A Mcrwv Diode 1N3304 AmerMicroSC Mcrwv Diode 1N3304A
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1N3299
1N3300
1N3300A
1N3301
1N3302
1N3302A
1N3303
1N3303A
1N3304
1N5411
1N5760
DIODE GE
103717
1N5758
1N5761
germanium
motorola 2n491
1N5759
Hitron
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TSP70
Abstract: No abstract text available
Text: Products Search Home Products Category About Us Product News Application Message to Us Contact Us You are Here : >Home>Product Showcase > MOSFETs Products Show Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS Package Series
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TSP2305A
TSP40GD120P
TSP25G135T
O-247
TSP25GD135T
TSP25G135P
TSP25GD135P
TSP70
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Untitled
Abstract: No abstract text available
Text: Data sheet 2-conductor diode terminal block; with diode 1N5408 Item No.: 281-915/281-400 2-conductor diode terminal block; with diode 1N5408 Item No.: 281-915/281-400 2-conductor diode terminal block; with diode 1N5408 Marking Business data Supplier WAGO Supplier part no.
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1N5408
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 1PS79SB10 Schottky barrier diode Product specification 1998 Jul 16 Philips Semiconductors Product specification Schottky barrier diode 1PS79SB10 FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode encapsulated in a SC-79 ultra small plastic SMD
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M3D319
1PS79SB10
SC-79
MAM403
SC-79)
SCA60
115104/00/01/pp8
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biconvex lens with focal length 1 m and diameter 25.4 mm
Abstract: laser diode DVD 100mw DL-3147-011 laser diode toshiba 780nm 650nm laser diode 200mw TOLD9225M mitsubishi laser diode OPHIR pd200 collimated LED 670 nm DL3147-011
Text: Laser Diodes, Optics, and Related Components - Optima Laser Diodes Laser Diode Mounting Kits Laser Diode Optics Glass Aspheric Lenses Plastic Aspheric Lenses Multi-element Lenses Diode Laser Modules OEM Diode Laser Modules Collimated Diode Lasers Optical Power
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658nm
ML1016R
685nm
ML1012R
785nm
ML64114R
Revised11JUN99
biconvex lens with focal length 1 m and diameter 25.4 mm
laser diode DVD 100mw
DL-3147-011
laser diode toshiba 780nm
650nm laser diode 200mw
TOLD9225M
mitsubishi laser diode
OPHIR pd200
collimated LED 670 nm
DL3147-011
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780nm-5mW
Abstract: 780nm laser diode module 780nm laser diode 8 mW Infrared diode Laser Diode 4 pin DIODE infrared laser diode laser diode 12 pin laser diode 780 nm diode laser
Text: US-Lasers: 780nm-5mW - Infrared Laser Diode and Infrared Diode Laser Module Page 1 of 1 US-Lasers: 780nm-5mW - Infrared Laser Diode and Infrared Diode Laser Module Links to Laser Diode & Laser Module Configurations and Specifications >>>>>>>>>> Barrel Specs:
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780nm-5mW
N780-5
NM780-5
MM780-5
com/mmn780nm5m
780nm laser diode module
780nm laser diode 8 mW
Infrared diode
Laser Diode 4 pin
DIODE
infrared laser diode
laser diode 12 pin
laser diode 780 nm
diode laser
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1PS79SB10
Abstract: M3D319 1PS79SB10/DG115
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 1PS79SB10 Schottky barrier diode Product data sheet 1998 Jul 16 NXP Semiconductors Product data sheet Schottky barrier diode 1PS79SB10 ; FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode encapsulated in a SC-79 ultra small plastic SMD
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M3D319
1PS79SB10
SC-79
MAM403
SC-79)
115104/00/01/pp7
1PS79SB10
M3D319
1PS79SB10/DG115
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R22A
Abstract: transistor MTBF OPTOCUPLER HAND BOOK TRANSISTOR mosfet transistor R1d R24 transistor optocupler transformer mtbf R18A R22E
Text: Data Base : MIL - HDBK - 217F Environment : Ground benign , 25 Load : 110VAC input , Full load Unit : ZPS60-3 Ver: V1.1 Date: 22/05/2003 CAT TYPE 5.1 Microcircuits,MOS 6.1 Diode,General 6.1 Diode, Schottky 6.1 Diode, Schottky 6.1 Diode, Fast 6.1 Diode, Zener
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110VAC
ZPS60-3
R22A
transistor MTBF
OPTOCUPLER HAND BOOK
TRANSISTOR mosfet
transistor R1d
R24 transistor
optocupler
transformer mtbf
R18A
R22E
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transistor R1d
Abstract: transistor R1A diode FR 105 TRANSISTOR 106 d1 R22A MTBF-ZPS40 04112 78540 R18A 217F
Text: Data Base : MIL - HDBK - 217F Environment : Ground benign , 25 Load : 110VAC input , Full load Unit : ZPS40-3 Ver: V1.1 Date: 21/05/2003 CAT TYPE 5.1 Microcircuits,MOS 6.1 Diode,General 6.1 Diode, Schottky 6.1 Diode, Schottky 6.1 Diode, Fast 6.1 Diode, Zener
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110VAC
ZPS40-3
transistor R1d
transistor R1A
diode FR 105
TRANSISTOR 106 d1
R22A
MTBF-ZPS40
04112
78540
R18A
217F
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IGBT 1500
Abstract: M2 DIODE UDC 1700
Text: SKiiP 792 GB 170 - 373 CTV Absolute Maximum Ratings Symbol 4 Visol Top ,Tstg Conditions 1) Values AC, 1min Operating / stor. temperature IGBT and InverseDiode VCES 5) VCC Operating DC link voltage IC IGBT 3) Tj IGBT + Diode IF Diode IFM Diode, tp < 1 ms IFSM
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792gb170
Abstract: semikron skiip 30 SemiSel 792GB170-373CTV
Text: SKiiP 792GB170-373CTV I. Power section Absolute maximum ratings Symbol Conditions Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms
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792GB170-373CTV
792gb170
semikron skiip 30
SemiSel
792GB170-373CTV
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BAP51-02
Abstract: BP317
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP51-02 General purpose PIN diode Preliminary specification 1999 Jun 28 Philips Semiconductors Preliminary specification General purpose PIN diode BAP51-02 FEATURES PINNING • Low diode capacitance PIN • Low diode forward resistance.
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M3D319
BAP51-02
OD523
MAM405
OD523)
125004/00/02/pp6
BAP51-02
BP317
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109 DIODE
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP50-02 General purpose PIN diode Product specification 2001 Apr 17 Philips Semiconductors Product specification General purpose PIN diode BAP50-02 FEATURES PINNING • Low diode capacitance PIN • Low diode forward resistance.
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M3D319
BAP50-02
OD523
MAM405
OD523)
613512/01/pp8
109 DIODE
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Diode Motorola 711 2N2905A
Abstract: pin configuration transistor BC547 2N2222 BC237 2N555
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMAD130 MMAD1103 MMAD1105 MMAD1107 MMAD1109 Monolithic Diode Arrays Surface Mount Diode Arrays These diode arrays are multiple diode junctions fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching
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MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
MV1644
MV2103
Diode Motorola 711 2N2905A
pin configuration transistor BC547 2N2222
BC237
2N555
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1gg5
Abstract: HSCH-9161 AGILENT TECHNOLOGIES 9161 4009 w-band pn#2 hsch-9161 W-band diode GaAs Detector Diode
Text: Agilent HSCH-9161 GaAs Detector Diode Data Sheet Description The HSCH-9161 is a discrete, beam lead, GaAs diode fabricated using the modified barrier integrated diode MBID process. Applications This diode is suitable for medium-low barrier, zero bias detector applications.The HSCH-9161
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HSCH-9161
HSCH-9161
HSCH-9161/rev
1gg5
AGILENT TECHNOLOGIES 9161
4009
w-band
pn#2 hsch-9161
W-band diode
GaAs Detector Diode
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HALF WAVE RECTIFIER CIRCUITS
Abstract: two transistor forward DD200GB40 DD200GB80
Text: DIODE MODULE DD200GB UL;E76102 M Power Diode Module DD200GB series are designed for various rectifier circuits. DD200GB has two diode two diode chips connecected in series and the mounting base is electrically isolated from elements for simple heatsink construction. Wide voltage rating
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DD200GB
E76102
DD200GB
DD200GB40
DD200GB80
HALF WAVE RECTIFIER CIRCUITS
two transistor forward
DD200GB40
DD200GB80
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DD200GB40
Abstract: DD200GB80
Text: DIODE MODULE DD200GB UL;E76102 （M） Power Diode Module DD200GB series are designed for various rectifier circuits. DD200GB has two diode two diode chips connecected in series and the mounting base is electrically isolated from elements for simple heatsink construction. Wide voltage rating
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DD200GB
E76102
DD200GB
42max
34max
05C/W
DD200GB40
DD200GB80
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780nm laser diode 8 mW
Abstract: 780nm laser diode 780nm laser diode module laser diode 780 nm
Text: US-Lasers: 780nm-10mW - Infrared Laser Diode and Infrared Diode Laser Module Page 1 of 1 US-Lasers: 780nm-10mW - Infrared Laser Diode and Infrared Diode Laser Module Back To Laser Modules TECHNICAL DATA for LASER MODULE Barrel Specs: z z z Collect Specs: 3/8 - 56 Thread Size
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780nm-10mW
780nm
com/m780nm10m
780nm laser diode 8 mW
780nm laser diode
780nm laser diode module
laser diode 780 nm
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diode cross reference
Abstract: schottky diode cross reference MV3110 AH513 AH761 AH512 impatt diode Gunn Diode AH370 DMK-6606
Text: CROS S R E F E R E N C E LIST MA/COM R E F . TC S REF. D E S C R IP T IO N MA40401 PACKAGED SCHOTTKY DIODE DH378 MA40402 PACKAGED SCHOTTKY DIODE DH379 MA40404 PACKAGED SCHOTTKY DIODE DH383 MA40404 PACKAGED SCHOTTKY DIODE DH384 MA40404 PACKAGED SCHOTTKY DIODE
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OCR Scan
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PDF
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MA40401
MA40402
MA40404
MA40405
MA40406
MA40408
diode cross reference
schottky diode cross reference
MV3110
AH513
AH761
AH512
impatt diode
Gunn Diode
AH370
DMK-6606
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