schottky diode 100A
Abstract: HEXFET SO-8 Schottky Diode 50V 3A IRF7322D1
Text: PD- 91705 IRF7322D1 PRELIMINARY FETKY MOSFET / Schottky Diode ● ● ● ● ● ● Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint
|
Original
|
PDF
|
IRF7322D1
ar90245,
schottky diode 100A
HEXFET SO-8
Schottky Diode 50V 3A
IRF7322D1
|
IRF7321D2
Abstract: SiC POWER MOSFET
Text: PD - 91667B IRF7321D2 PRELIMINARY TM FETKY MOSFET & Schottky Diode l l l l l l Co-packaged HEXFETÒ Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFETÒ Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint 1
|
Original
|
PDF
|
91667B
IRF7321D2
Com10)
IRF7321D2
SiC POWER MOSFET
|
ed 77A DIODE
Abstract: IRF7322D1
Text: PD- 91705A IRF7322D1 FETKY MOSFET / Schottky Diode ● ● ● ● ● ● Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint 1 8 K
|
Original
|
PDF
|
1705A
IRF7322D1
ed 77A DIODE
IRF7322D1
|
Untitled
Abstract: No abstract text available
Text: PD - 95297 IRF7321D2PbF TM FETKY MOSFET & Schottky Diode Co-packaged HEXFET Power MOSFET and Schottky Diode l Ideal For Buck Regulator Applications l P-Channel HEXFET® l Low VF Schottky Rectifier l Generation 5 Technology l SO-8 Footprint l Lead-Free Description
|
Original
|
PDF
|
IRF7321D2PbF
EIA-481
EIA-541.
|
IRF7807D1
Abstract: No abstract text available
Text: PD - 95297 IRF7321D2PbF TM Co-packaged HEXFET Power MOSFET and Schottky Diode l Ideal For Buck Regulator Applications l P-Channel HEXFET® l Low VF Schottky Rectifier l Generation 5 Technology l SO-8 Footprint l Lead-Free Description FETKY MOSFET & Schottky Diode
|
Original
|
PDF
|
IRF7321D2PbF
EIA-481
EIA-541.
IRF7807D1
|
Untitled
Abstract: No abstract text available
Text: PD - 95298 IRF7322D1PbF FETKYä MOSFET / Schottky Diode l l l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint Lead-Free A A
|
Original
|
PDF
|
IRF7322D1PbF
EIA-481
EIA-541.
|
IRF7807D1
Abstract: No abstract text available
Text: PD - 95298 IRF7322D1PbF FETKYä MOSFET / Schottky Diode l l l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint Lead-Free A 1
|
Original
|
PDF
|
IRF7322D1PbF
EIA-481
EIA-541.
IRF7807D1
|
IRF7321D2
Abstract: ed 77A DIODE
Text: PD- 91667C IRF7321D2 TM FETKY MOSFET & Schottky Diode l l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint A A S G 1 8 K
|
Original
|
PDF
|
91667C
IRF7321D2
IRF7321D2
ed 77A DIODE
|
Untitled
Abstract: No abstract text available
Text: PD- 91705B IRF7322D1 FETKYä MOSFET / Schottky Diode l l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint A A S G 1 8 K 2 7
|
Original
|
PDF
|
91705B
IRF7322D1
EIA-481
EIA-541.
|
IRF7322D1
Abstract: IRF7807D1 MS-012AA
Text: PD- 91705B IRF7322D1 FETKYä MOSFET / Schottky Diode l l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint A A S G 1 8 K 2 7
|
Original
|
PDF
|
91705B
IRF7322D1
EIA-481
EIA-541.
IRF7322D1
IRF7807D1
MS-012AA
|
IRF7321D2
Abstract: No abstract text available
Text: PD- 91667D IRF7321D2 TM FETKY MOSFET & Schottky Diode l l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET® Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint A A S G 1 8 K 2
|
Original
|
PDF
|
91667D
IRF7321D2
EIA-481
EIA-541.
IRF7321D2
|
Untitled
Abstract: No abstract text available
Text: PD- 91667D IRF7321D2 TM FETKY MOSFET & Schottky Diode l l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET® Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint A A S G 1 8 K 2
|
Original
|
PDF
|
91667D
IRF7321D2
EIA-481
EIA-541.
|
50V 60A MOSFET
Abstract: Fast Recovery Bridge Rectifier, 60A, 600V MOSFET 600v 60a MIC4452
Text: APT77H60J 600V, 77A, 0.065Ω Max, trr ≤300ns N-Channel Ultrafast Recovery FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for maximum reliability in ZVS phase shifted bridge and other circuits through much reduced
|
Original
|
PDF
|
APT77H60J
300ns
50V 60A MOSFET
Fast Recovery Bridge Rectifier, 60A, 600V
MOSFET 600v 60a
MIC4452
|
philips diode PH 33D
Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817
|
Original
|
PDF
|
1N821
1N821A
1N823
1N823A
1N825
1N825A
1N827
1N827A
1N829
1N829A
philips diode PH 33D
PH C5V1
philips diode PH 33m
philips diode PH 33J
PH 33D
PH33D
ph33g
33G PH DIODE
PH 33G
philips diode PH 37m
|
|
|
APT55M50JFLL
Abstract: No abstract text available
Text: APT55M50JFLL 550V POWER MOS 7TM FREDFET Symbol VDSS ID 27 2 T- D G SO "UL Recognized" ISOTOP • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package • FAST RECOVERY BODY DIODE MAXIMUM RATINGS S S Power MOS 7TM is a new generation of low loss, high voltage, N-Channel
|
Original
|
PDF
|
APT55M50JFLL
OT-227
APT55M50JFLL
|
APT55M50JFLL
Abstract: No abstract text available
Text: APT55M50JFLL 550V POWER MOS 7 R FREDFET VDSS ID S 27 2 T- D G SO "UL Recognized" ISOTOP ® • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package • FAST RECOVERY BODY DIODE MAXIMUM RATINGS Symbol 0.050Ω S Power MOS 7 is a new generation of low loss, high voltage, N-Channel
|
Original
|
PDF
|
APT55M50JFLL
OT-227
APT55M50JFLL
|
Untitled
Abstract: No abstract text available
Text: APT50M60L2VFR 500V 0.060Ω 77A POWER MOS V FREDFET TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
|
Original
|
PDF
|
APT50M60L2VFR
O-264
O-264
|
NDL7601P1C
Abstract: L7601 NDL7601 NDL7601P NDL7601PD
Text: h PRELIMINARY DATA SHEET LASER DIODE NDL7601P Series 1 310 nm OPTICAL FIBER COMMUNICATIONS InG aA sP MQW-DFB LASER DIODE COAXIAL M ODULE DESCRIPTIO N N D L7601P S eries are 1 310 nm DFB Distributed Feed-Back laser diode coaxial package modules with sin glem ode fiber. N ew ly developed M ultiple Quantum W ell (MQW) stucture is adopted to achieve stable dynam ic
|
OCR Scan
|
PDF
|
NDL7601P
L7601P
NDL7601P1C
L7601
NDL7601
NDL7601PD
|
Untitled
Abstract: No abstract text available
Text: P D - 917 0 5 International l R Rectifier IRF7322D1 PRELIMINARY FETKY MOSFET/ Schottky Diode Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low V F Schottky Rectifier Generation 5 Technology
|
OCR Scan
|
PDF
|
IRF7322D1
|
Untitled
Abstract: No abstract text available
Text: -«*«$r<7r—K Rectifier Diode Single Diode • OUTLINE DIMENSIONS Case : 2F Type D2FD U n it I ! ‘ 600V 1.4A u Ä • Cathode m ark 1 \ > 4c 3 c s a u _ Q 3 QQ c s iiT 'T r£ f? ^1 o _ * ii^ * 2.5^ 6.1 LD vj-ieiM W J T y p e No. / 77A C la s s D a te code
|
OCR Scan
|
PDF
|
D2F10
D2F20
D2F40
D2F60
|
Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product Specification PowerMOS transistor BUK637-500B Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic envelope. REDFET with fast recovery
|
OCR Scan
|
PDF
|
BUK637-500B
BUK637-500B
|
BUK657-400B
Abstract: No abstract text available
Text: PHILIPS INTERNATIONAL bSE D m 711035b 00b43Sl 3 55 • PHIN Philips Semiconductors Product Specification PowerMOS transistor BUK657-400B Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a
|
OCR Scan
|
PDF
|
711035b
00b43Sl
BUK657-400B
-T0220AB
|
BUK657-500B
Abstract: T0220AB transistor D 587
Text: N AMER PHILIPS/DISCRETE hTE D • ^53*131 00308^0 ESI « A P X Philips Semiconductors Product Specification PowerMOS transistor Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a
|
OCR Scan
|
PDF
|
BUK657-500B
T0220AB
transistor D 587
|
SC4M
Abstract: No abstract text available
Text: S /a - y M f — n w r 3 H ': * — K Schottky Barrier Diode R e ctifie r Module • W ß - r JÜ B l O U T L IN E D240SC4M D IM E N S IO N S 3-M 4 nuts 40V 240A □2 40 SC 4M 20 .1 ■ fë fà m I Unit i R A T IN G S ÎÊ ÎÎÜ f ^ / È f ê A b s o lu te Maximum R a tin g s
|
OCR Scan
|
PDF
|
D240SC4M
100ns,
240SC
10msi
SC4M
|
