FF300R06KE3
Abstract: No abstract text available
Text: Technische Information / technical information FF300R06KE3 IGBT-Module IGBT-modules 62mm C-Serien Modul mit Trench/Feldstop IGBT3 und Emcon3 Diode 62mm C-Serien module with trench/fieldstop IGBT3 and EmCon3 diode IGBT-Wechselrichter / IGBT-inverter Vorläufige Daten / preliminary data
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FF300R06KE3
FF300R06KE3
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information XPTTM 600V IGBT GenX3TM w/Diode MMIX1X200N60B3H1 Electrically Isolated Tab VCES IC110 VCE(sat) tfi(typ) = = ≤ = 600V 72A 1.7V 110ns Extreme Light Punch Through IGBT for 10-30kHz Switching Symbol Test Conditions VCES VCGR
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MMIX1X200N60B3H1
IC110
110ns
10-30kHz
IF110
MMIX1X200N60B3
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information IXGK72N60A3H1 IXGX72N60A3H1 GenX3TM 600V IGBT w/Diode VCES IC110 VCE sat tfi(typ) Ultra-Low Vsat PT IGBTs for up to 5kHz Switching = = £ = 600V 72A 1.35V 250ns TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES
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IXGK72N60A3H1
IXGX72N60A3H1
IC110
250ns
O-264
PLUS247
IF110
72N60A3
4-23-09-C
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information GenX3TM 600V IGBT with Diode IXGK72N60B3H1 IXGX72N60B3H1 VCES IC110 VCE sat tfi(typ) Medium speed low Vsat PT IGBTs 5-40 kHz switching = = ≤£ = 600V 72A 1.8V 92ns TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES
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IXGK72N60B3H1
IXGX72N60B3H1
IC110
O-264
PLUS247
72N60B3
06-26-08-C
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IXGK72N60B3H1
Abstract: PLUS247 ixgx72n60b3h1 IXGX72N60B3H
Text: Preliminary Technical Information IXGK72N60B3H1 IXGX72N60B3H1 GenX3TM 600V IGBT with Diode VCES IC110 VCE sat tfi(typ) Medium speed low Vsat PT IGBTs 5-40 kHz switching = = ≤£ = 600V 72A 1.8V 92ns TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES
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IXGK72N60B3H1
IXGX72N60B3H1
IC110
O-264
PLUS247
72N60B3
06-26-08-C
IXGK72N60B3H1
PLUS247
ixgx72n60b3h1
IXGX72N60B3H
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information XPTTM 600V IGBT GenX3TM w/Diode MMIX1X200N60B3H1 Electrically Isolated Tab VCES IC110 VCE(sat) tfi(typ) = = ≤ = 600V 72A 1.7V 110ns Extreme Light Punch Through IGBT for 10-30kHz Switching C G Symbol Test Conditions Maximum Ratings
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MMIX1X200N60B3H1
IC110
110ns
10-30kHz
IF110
MMIX1X200N60B3
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MMIX1X200N60B3H1
Abstract: No abstract text available
Text: Advance Technical Information XPTTM 600V IGBT GenX3TM w/Diode MMIX1X200N60B3H1 Electrically Isolated Tab VCES IC110 VCE(sat) tfi(typ) = = ≤ = 600V 72A 1.7V 110ns Extreme Light Punch Through IGBT for 10-30kHz Switching C G Symbol Test Conditions Maximum Ratings
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10-30kHz
IC110
IF110
MMIX1X200N60B3H1
110ns
MMIX1X200N60B3
MMIX1X200N60B3H1
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72N60A3
Abstract: IXGX72N60A3H1 IXGK72N60A3H1 PLUS247 IF110 IGBT 600V 200A NS0-100
Text: Advance Technical Information IXGK72N60A3H1 IXGX72N60A3H1 GenX3TM 600V IGBT w/Diode VCES IC110 VCE sat tfi(typ) Ultra-Low Vsat PT IGBTs for up to 5kHz Switching = = ≤£ = 600V 72A 1.35V 250ns TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C
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IXGK72N60A3H1
IXGX72N60A3H1
IC110
250ns
O-264
IF110
72N60A3
4-23-09-C
IXGX72N60A3H1
IXGK72N60A3H1
PLUS247
IF110
IGBT 600V 200A
NS0-100
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Untitled
Abstract: No abstract text available
Text: GenX3TM 600V IGBTs w/ Diode IXGK72N60B3H1 IXGX72N60B3H1 VCES IC110 VCE sat tfi(typ) Medium Speed Low Vsat PT IGBTs 5-40 kHz Switching = = £ = 600V 72A 1.8V 92ns TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 600 V VCGR
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IXGK72N60B3H1
IXGX72N60B3H1
IC110
O-264
PLUS247
72N60B3
6-26-08-C
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DS100144
Abstract: No abstract text available
Text: Advance Technical Information GenX3TM 600V IGBT w/Diode IXGK72N60A3H1 IXGX72N60A3H1 VCES IC110 VCE sat tfi(typ) Ultra-Low Vsat PT IGBTs for up to 5kHz Switching = = ≤£ = 600V 72A 1.35V 250ns TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C
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IXGK72N60A3H1
IXGX72N60A3H1
IC110
250ns
O-264
IF110
72N60A3
4-23-09-C
DS100144
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IXGX72N60C3H1
Abstract: PLUS247
Text: IXGX72N60C3H1 GenX3TM 600V IGBT with Diode VCES IC110 VCE sat tfi(typ) High-Speed PT IGBT for 40-100kHz Switching = = ≤£ = 600V 72A 2.5V 55ns PLUS247 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
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IXGX72N60C3H1
IC110
40-100kHz
PLUS247
72N60C3
11-25-09-C
IXGX72N60C3H1
PLUS247
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Untitled
Abstract: No abstract text available
Text: GenX3TM 600V IGBT with Diode IXGX72N60C3H1 VCES IC110 VCE sat tfi(typ) High-Speed PT IGBT for 40-100kHz Switching = = ≤£ = 600V 72A 2.5V 55ns PLUS247 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
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IXGX72N60C3H1
IC110
40-100kHz
PLUS247
72N60C3
11-25-09-C
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FMX-G12S
Abstract: FMXG12
Text: FMX-G12S SANKEN ELECTRIC CO., LTD. 1. Scope The present specifications shall apply to an FMX-G12S 2. Outline Type Silicon Diode Structure Resin Molded Applications High Frequency Rectification Flammability : UL94V-0 Equivalent 3. Absolute maximum ratings
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FMX-G12S
UL94V-0
FMXG12
FMX-G12S
FMXG12
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Untitled
Abstract: No abstract text available
Text: FMX-G12S SANKEN ELECTRIC CO., LTD. 1. Scope The present specifications shall apply to an FMX-G12S 2. Outline Type Silicon Diode Structure Resin Molded Applications High Frequency Rectification Flammability : UL94V-0 Equivalent 3. Absolute maximum ratings
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FMX-G12S
UL94V-0
FMXG12
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NS1106
Abstract: FMNS1106S ns1106s
Text: SANKEN ELECTRIC CO., LTD. FMNS-1106S 1. Scope The present specifications shall apply to an FMNS-1106S. 2. Outline Type Silicon Diode Structure Resin Molded Applications High Frequency Rectification 090714 Flammability : UL94V-0 Equivalent 1／5 61426-01
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FMNS-1106S.
UL94V-0
FMNS-1106S
10msec.
1ms10s
NS1106
NS1106
FMNS1106S
ns1106s
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Untitled
Abstract: No abstract text available
Text: MFC135 MFA135 MFK135 MFX135 Thyristor/Diode Modules Features： n Isolated mounting base 3600V~ Pressure contact technology with Increased power cycling capability n Space and weight savings Typical Applications n AC/DC Motor drives n Various rectifiers n
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MFC135
MFA135
MFK135
MFX135
214F3/216F3
vol100W
150MA
216F3
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FMB-G14L
Abstract: FMBG14L FMBG14
Text: SANKEN ELECTRIC CO., LTD. FMB-G14L 1. Scope The present specifications shall apply to an FMB-G14L. 2. Outline High Frequency Rectification 3. Type Silicon Schottky Barrier Diode Structure Resin Molded Applications High Frequency Rectification Flammability : UL94V-0 Equivalent
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FMB-G14L
FMB-G14L.
UL94V-0
10msec
FMBG14
FMB-G14L
FMBG14L
FMBG14
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FMJ-23L
Abstract: DIODE 23L
Text: SANKEN ELECTRIC CO., LTD. FMJ-23L 1. Scope The present specifications shall apply to an FMJ-23L. 2. Outline Type Silicon Schottky Barrier Diode Structure Resin Molded Applications Flammability：UL94V-0 Equivalent High Frequency Rectification, etc. 3. Absolute maximum ratings
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FMJ-23L
FMJ-23L.
FlammabilityUL94V-0
FMJ-23L
FMJ23L
DIODE 23L
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IRGB4061D
Abstract: IRF1010 Transistor marking code S IRGB4061DPBF
Text: PD - 97189B IRGB4061DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • Low VCE ON Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 S short circuit SOA
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97189B
IRGB4061DPbF
IRF1010
O-220AB
IRGB4061D
IRF1010
Transistor marking code S
IRGB4061DPBF
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Untitled
Abstract: No abstract text available
Text: PD - 97189B IRGB4061DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • Low VCE ON Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 S short circuit SOA
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97189B
IRGB4061DPbF
IRF1010
O-220AB
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duraseal
Abstract: SiC IGBT High Power Modules sic wafer 100 mm Wacker Silicones 28Cu72Ag wacker 100C parallel mosfet Cree SiC MOSFET silicon carbide
Text: Performance and Reliability Characteristics of 1200 V, 100 A, 200oC Half-Bridge SiC MOSFET-JBS Diode Power Modules James D. Scofield and J. Neil Merrett Air Force Research Laboratory 1950 Fifth St WPAFB, OH 45433 937-255-5949 james.scofield@wpafb.af.mil James Richmond and
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200oC
duraseal
SiC IGBT High Power Modules
sic wafer 100 mm
Wacker Silicones
28Cu72Ag
wacker
100C
parallel mosfet
Cree SiC MOSFET
silicon carbide
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Diode N2206
Abstract: FMN-2206S fmn2206s FMN 2206S
Text: SANKEN ELECTRIC CO., LTD. FMN-2206S 1. Scope The present specifications shall apply to an FMN-2206S 2. Outline Type Silicon Diode Structure Resin Molded Applications High Frequency Rectification 071029 Flammability : UL94V-0 Equivalent 1／5 61426-01 SANKEN ELECTRIC CO., LTD.
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FMN-2206S
FMN-2206S
UL94V-0
10msec.
1ms10s
N2206
Diode N2206
fmn2206s
FMN 2206S
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G50N60
Abstract: No abstract text available
Text: Preliminary Technical Information High-Gain IGBT w/ Diode VCES = 600V IC110 = 21A VCE sat ≤ 2.50V IXGJ50N60C4D1 (Electrically Isolated Tab) High-Speed PT Trench IGBT ISO TO-247TM E153432 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C
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IC110
IXGJ50N60C4D1
O-247TM
E153432
IF110
50N60C4
0-06-11-A
G50N60
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diode sg 64
Abstract: SG5774AJ SG5772J SG25768 sf 819 d 1N5772 JANTX 1N5768 SG25770J
Text: , SG5768/68A SG5770/70A, SG5772/72A, SG5774/74A SG25768, SG25770, SG6496/96A DIODE ARRAY CIRCUITS SILICON GENERAL LINEAR IN TEGRATED CIRCUITS DESCRIPTION FEATURES The Silicon General series of diode arrays feature high breakdown, high speed diodes in a variety of configurations.
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SG5768/68A
SG5770/70A,
SG5772/72A,
SG5774/74A
SG25768,
SG25770,
SG6496/96A
500mA
14-PIN
diode sg 64
SG5774AJ
SG5772J
SG25768
sf 819 d
1N5772 JANTX
1N5768
SG25770J
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