si 1125 hd
Abstract: semikron skiip 400 gb 1513GB173-3DL PX16
Text: SKiiP 1513GB173-3DL I. Power section Absolute maximum ratings Symbol Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms
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1513GB173-3DL
si 1125 hd
semikron skiip 400 gb
1513GB173-3DL
PX16
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semikron skiip 400 gb
Abstract: SemiSel 1803GB173-3DW
Text: SKiiP 1803GB173-3DW I. Power section Absolute maximum ratings Symbol Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms
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1803GB173-3DW
semikron skiip 400 gb
SemiSel
1803GB173-3DW
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diode F4 6A
Abstract: 4F36F123
Text: Technische Information / technical information IGBT-Module IGBT-modules IFS100B12N3E4_B39 MIPAQ base Modul mit Trench/Feldstopp IGBT4, größerer Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4, enlarged Emitter Controlled 4 diode and current
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IFS100B12N3E4
428654F4
D3264
ECFC24
B32DC
D3692C
CD3288
ECFC26
B32DC6
6934F
diode F4 6A
4F36F123
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TC1617
Abstract: TCN75 TCM1617 TCM1617EV TCM1617MQR TC-1617
Text: SMBUS THERMAL SENSOR WITH EXTERNAL DIODE INPUT EVALUATION KIT AVAILABLE TCM1617 TCM1617 SMBus THERMAL SENSOR WITH EXTERNAL DIODE INPUT FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ The TCM1617 is a serially programmable temperature sensor optimized for monitoring modern high performance
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TCM1617
TCM1617
TCM1617-1
TC1617
TCN75
TCM1617EV
TCM1617MQR
TC-1617
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acpicompliant win 7
Abstract: No abstract text available
Text: ACPI-COMPLIANT SMBUS THERMAL SENSOR WITH EXTERNAL DIODE INPUT EVALUATION KIT AVAILABLE TC1066 TC1066 *Patent Pending ACPI-COMPLIANT SMBus THERMAL SENSOR WITH EXTERNAL DIODE INPUT FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ ■ ■ The TC1066 is a serially programmable temperature
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TC1066
TC1066
TC1066s
TC1066-1
acpicompliant win 7
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TC1068
Abstract: TC1068MQR TCM1617EV TCN75 tc1068.1
Text: SMBus THERMAL SENSOR WITH EXTERNAL DIODE INPUT EVALUATION KIT AVAILABLE TC1068 TC1068 SMBus THERMAL SENSOR WITH EXTERNAL DIODE INPUT FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ ■ The TC1068 is a serially programmable temperature sensor optimized for monitoring modern high performance
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TC1068
TC1068
TC1068-1
TC1068MQR
TCM1617EV
TCN75
tc1068.1
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TC1066
Abstract: TC1066MQR TCM1617EV TCN75
Text: ACPI-Compliant SMBus Thermal Sensor with External Diode Input EVALUATION KIT AVAILABLE TC1066 TC1066 *Patent Pending ACPI-Compliant SMBus Thermal Sensor with External Diode Input FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ ■ ■ The TC1066 is a serially programmable temperature
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TC1066
TC1066
TC1066-1
D-82152
TC1066MQR
TCM1617EV
TCN75
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MIL-PRF-55310
Abstract: No abstract text available
Text: Helping Customers Innovate, Improve & Grow Application Note Note Voltage Controlled Crystal Oscillators Introduction A VCXO voltage controlled crystal oscillator is a crystal oscillator which includes a varactor diode and associated circuitry allowing the frequency to be changed by application of a voltage across that diode.
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D-74924
1-88-VECTRON-1
MIL-PRF-55310
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Untitled
Abstract: No abstract text available
Text: Helping Customers Innovate, Improve & Grow Application Note Note Voltage Controlled Crystal Oscillators Introduction A VCXO voltage controlled crystal oscillator is a crystal oscillator which includes a varactor diode and associated circuitry allowing the frequency to be changed by application of a voltage across that diode.
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D-74924
1-88-VECTRON-1
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CMT32N25N3P
Abstract: No abstract text available
Text: CMT32N25 POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This advanced MOSFET is designed to withstand high ! Avalanche Energy Specified energy in avalanche and commutation modes. The new ! Source-to-Drain Diode Recovery Time Comparable to a energy efficient design also offers a drain-to-source diode
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CMT32N25
CMT32N25N3P
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MO-193-C
Abstract: No abstract text available
Text: Si3812DV Vishay Siliconix N-Channel 20 V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (A) 0.125 at VGS = 4.5 V 2.4 0.200 at VGS = 2.5 V 1.8 SCHOTTKY PRODUCT SUMMARY VKA (V) VF (V) Diode Forward Voltage IF (A)
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Si3812DV
2002/95/EC
Si3812DV-T1-GE3
11-Mar-11
MO-193-C
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Untitled
Abstract: No abstract text available
Text: ICP Test Report Certification Packet Company name: Suzhou Good-Ark Electronics Co.,Ltd. Product Series: DO-34DO-35 Lead-Free switch diode Series Product #:Glass Diode Issue Date: Sep 14 , 2012 It is hereby certified by Suzhou Goodark Electronics CO.,Ltd. that there is neither RoHS EU Directive
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DO-34ã
DO-35
2002/95/EC
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Untitled
Abstract: No abstract text available
Text: ICP Test Report Certification Packet Company name: Suzhou Good-Ark Electronics Co.,Ltd. Product Series: DO-34DO-35 Lead switch diode Series Product #:Glass Diode Issue Date: Sep 14 , 2012 It is hereby certified by Suzhou Goodark Electronics CO.,Ltd. that there is neither RoHS EU Directive
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DO-34ã
DO-35
2002/95/EC
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Untitled
Abstract: No abstract text available
Text: bbSB'Ol D0242S4 250 « A P X N AMER PHILIPS/DISCRETE BAS32L b7E D J V HIGH-SPEED SILICON DIODE FOR SURFACE MOUNTING The BAS32L is a planar epitaxial high-speed diode designed for fast logic applications. This SM diode is a leadless diode in a hermetically sealed SOD-80C glass envelope with tin-plated
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D0242S4
BAS32L
BAS32L
OD-80C
100X1
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bc 7-25 pnp
Abstract: transistor bc 7-25 transistor 724 731 zener diode transistor B 722 transistor Bc 2n2222 transistor BC 176 MPS6521 transistor 2N5952 TP2222A transistor
Text: DISCRETE SEMICONDUCTORS INDEX AND CROSS REFERENCE Industry Number Type Allegro Number s Allegro Package 1 Pinning 2 3 Ratings (Page) 1N914 Diode TMPD914 TO-236AB A NC K 7-29 1N4148 Diode TMPD4148 TO-236AB A NC K 7-29 1N4150 Diode TM PD4150 TO-236AB A NC K
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1N914
1N4148
1N4150
1N4565
1N4565A
1N4566
1N4566A
1N4570
1N4570A
1N4571
bc 7-25 pnp
transistor bc 7-25
transistor 724
731 zener diode
transistor B 722
transistor Bc 2n2222
transistor BC 176
MPS6521
transistor 2N5952
TP2222A transistor
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Untitled
Abstract: No abstract text available
Text: Product specification Philips Semiconductors BBY31 Variable capacitance diode DESCRIPTION The BBY31 is a silicon planar variable capacitance diode in a microminiature SOT23 envelope. It is intended for electronic tuning applications in thick and thin film
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BBY31
BBY31
RAS63
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Untitled
Abstract: No abstract text available
Text: P hilips Sem iconductors Product specification Silicon planar epitaxial high-speed diode DESCRIPTION Silicon epitaxial high-speed diode in a microminiature plastic envelope. It is intended for high-speed switching applications. November 1993 BAS678 QUICK REFERENCE DATA
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BAS678
7Z69086
BAW62
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Untitled
Abstract: No abstract text available
Text: BAS16 _ y \ _ SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE Silicon epitaxial high-speed diode in a m icrom iniature plastic envelope. It is intended fo r high-speed switching in hybrid th ick and th in -film circuits.
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BAS16
243pF
BAW62;
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bc 7-25 pnp
Abstract: transistor bc 7-25 2N5245 transistor 2n3819 cross reference TO-266AA 2N3904 731 jFET Array BFR30 "cross reference" 2N5308 cross reference 266AA
Text: DISCRETE SEMICONDUCTORS IN D EX AND CROSS REFERENCE Industry Number 1N914 1N4148 1N4150 1N5229 1N5230 Type Diode Diode Diode Zener Zener Pinning 2 3 A A A A A NC NC NC NC K K K K NC K 7-29 7-29 7-29 7-30 7-30 A A A A A NC NC NC NC NC K K K K K 7-30 7-30 7-30
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1N914
1N4148
1N4150
1N5229
1N5230
1N5231
1N5232
1N5233
1N5234
1N5235
bc 7-25 pnp
transistor bc 7-25
2N5245 transistor
2n3819 cross reference
TO-266AA
2N3904 731
jFET Array
BFR30 "cross reference"
2N5308 cross reference
266AA
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BAS678
Abstract: BAW62 QDE4331 BAW62 SOT23 MBB111 apx 188
Text: • Philips Semiconductors N ^ fc.b53T31 AMER 002432b S3T « A P X PH ILIP S /D IS C R FTF L7T - 1\ Product soecificatmn Silicon planar epitaxial high-speed diode DESCRIPTION Silicon epitaxial high-speed diode in a microminiature plastic envelope. It
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b53T31
002432b
BAS678
10mAtoVâ
bb53T31
QDE4331
BAS678
BAW62
BAW62
BAW62 SOT23
MBB111
apx 188
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MT1115
Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
Text: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir
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108th
MT1115
2N3303
FPT100 phototransistor
UA739 equivalent
transistor bc 554 pnp
mt1039
ft2974
fairchild 2N3565
FD6666 diode
transistor npn Epitaxial Silicon SST 117
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BA221
Abstract: ba221 d BB533
Text: N AMER PHILIPS/DISCRETE tTE D A • ^53131 Q02bim äb^ IAPX BA221 GENERAL PURPOSE DIODE Silicon planar epitaxial diode in a DO-35 envelope; intended for general purposes. QUICK REFERENCE DATA Continuous reverse voltage Repetitive peak forward current Storage tem perature
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Q02bim
BA221
DO-35
DO-35
BA221
ba221 d
BB533
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Untitled
Abstract: No abstract text available
Text: N AI1ER PHILIPS/DISCRETE APX ^ 5 3*13 1 DD2b3?a 712 BAY80 b'lE » GENERAL PURPOSE DIODE Silicon planar epitaxial diode in DO-35 envelope; intended for switching and general purposes in industrial equipment e.g. oscilloscopes, digital voltmeters and video output stages in colour television.
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BAY80
DO-35
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12N60D1D
Abstract: 12n60d1
Text: HGTG12N60D1D 12A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode Package Features • 12A,600V JE D E C S T Y LE TO -247 • Latch Free Operation • Typical Fall Time <500ns • Low Conduction Loss • With Anti-Parallel Diode • tRR < 60ns Description
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HGTG12N60D1D
500ns
12N60D1D
12n60d1
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