PK P6KE 200A
Abstract: SLD30-018 436 6V8A 1.5KA36CA N10H kt 201-500 P6KA36CA P6KA 335 Diode N10Z P6KA18CA
Text: PRODUCT CATALOG & DESIGN GUIDE DIODE Transient Voltage Suppression TVS Diode Products Littelfuse Circuit Prot Solutions Portf Consumer Electronics Telecom White Goods Medical Equipment TVSS and Power S DESIGN SUPPORT Live Application Design and Technical Support—Tap into our expertise. Littelfuse engineers are available around the world to help you address design challenges and develop
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EC111
EC2111v1E0804
PK P6KE 200A
SLD30-018
436 6V8A
1.5KA36CA
N10H
kt 201-500
P6KA36CA
P6KA 335
Diode N10Z
P6KA18CA
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information XPTTM 600V GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) IXXR100N60B3H1 (Electrically Isolated Tab) = = ≤ = 600V 68A 1.80V 150ns Extreme Light Punch Through IGBT for 10-30kHz Switching ISOPLUS247TM Symbol Test Conditions Maximum Ratings
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IC110
IXXR100N60B3H1
150ns
10-30kHz
ISOPLUS247TM
0-06A
100N60B3
12-01-11-B
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100n60
Abstract: IXXR100N60B3H1
Text: Advance Technical Information IXXR100N60B3H1 XPTTM 600V GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) (Electrically Isolated Tab) = = ≤ = 600V 68A 1.80V 150ns Extreme Light Punch Through IGBT for 10-30kHz Switching ISOPLUS247TM Symbol Test Conditions Maximum Ratings
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10-30kHz
IC110
IXXR100N60B3H1
150ns
0-06A
100N60B3
12-01-11-B
100n60
IXXR100N60B3H1
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94N50
Abstract: No abstract text available
Text: Advance Technical Information IXFN94N50P2 PolarP2TM HiPerFETTM Power MOSFET VDSS ID25 = = 500V 68A 55m 250ns RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC E153432 S Symbol Test Conditions Maximum Ratings
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IXFN94N50P2
250ns
E153432
100ms
94N50P2
9-13-A
94N50
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Untitled
Abstract: No abstract text available
Text: XPTTM 600V IGBT GenX3TM w/ Diode MMIX1X100N60B3H1 Electrically Isolated Tab VCES = 600V IC110 = 68A VCE(sat) ≤ 1.80V Extreme Light Punch Through IGBT for 10-30kHz Switching C G Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR
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MMIX1X100N60B3H1
IC110
10-30kHz
0-06A
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Untitled
Abstract: No abstract text available
Text: Transient Voltage Suppression Diodes Surface Mount – 600W > TPSMB series TPSMB Series Uni-directional TVS Diode Arrays SPA Description Family of Products The TPSMB series is designed specifically to protect sensitive electronic equipment from voltage transients
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AEC-Q101
JESD201A
EC-61000-4-2
DO-214AA
12mm/13â
RS-481
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GDE 13a DIODE
Abstract: diode marking GDE 38 diode 009 6V8A marking diode 47C sot23 NEC D 882 p GEX 36A DIODE Diode Gfg 6f MOTOROLA 727 36A Diode GFP 56A GFM 16A
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA SOTĆ23 Dual Monolithic Common Anode Zener MMBZ5V6ALT1 ADDITIONAL VOLTAGES AVAILABLE Transient Voltage Suppressor For ESD Protection Motorola Preferred Device This dual monolithic silicon zener diode is designed for applications requiring transient
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OT-23
GDE 13a DIODE
diode marking GDE 38
diode 009 6V8A
marking diode 47C sot23
NEC D 882 p
GEX 36A DIODE
Diode Gfg 6f
MOTOROLA 727 36A
Diode GFP 56A
GFM 16A
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diode 1.5ke 200A
Abstract: Diode P6KE 100A
Text: TVS DIODE Electrical Characteristics P4KE, P6KE, 1.5KE Series: 51 to 400 Volts Break Down Voltage Code Maximum Reverse Current IRSM A Series: Series: Series: P4KE P6KE 1.5KE Break Down Voltage Working Maximum Maximum Maximum VBR @ IT Peak Reverse Clamping Temperature
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C5DC03
diode 1.5ke 200A
Diode P6KE 100A
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6868A
Abstract: No abstract text available
Text: TVS DIODE Electrical Characteristics P4KE, P6KE, 1.5KE Series: 51 to 400 Volts Break Down Voltage Code Maximum Reverse Current IRSM A Series: Series: Series: P4KE P6KE 1.5KE Break Down Voltage Working Maximum Maximum Maximum VBR @ IT Peak Reverse Clamping Temperature
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C5DC03
6868A
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ADE-208-442A
Abstract: Hitachi DSA00359
Text: HZM6.8FA Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-442A Z Rev 1 September 1996 Features • HZM6.8FA has four devices, and can absorb external + and -surge. • MPAK-5 Package is suitable for high density surface mounting and high speed assembly.
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ADE-208-442A
Hitachi DSA00359
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SFT1445
Abstract: No abstract text available
Text: Ordering number : ENA1897A SFT1445 N-Channel Power MOSFET http://onsemi.com 100V, 17A, 111mΩ, Single TP/TP-FA Features • • ON-resistance RDS on 1=85mΩ(typ.) Halogen free compliance • • Input Capacitance Ciss=1030pF(typ.) Protection diode in 4V drive
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ENA1897A
SFT1445
1030pF
PW10s)
PW10s,
A1897-9/9
SFT1445
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Hitachi DSA001653
Abstract: No abstract text available
Text: HZM6.8WA Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-351A Z Rev 1 Feb. 1, 1999 Features • HZM6.8WA has two devices, and can absorb external + and -surge. • MPAK Package is suitable for high density surface mounting and high speed assembly.
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ADE-208-351A
Hitachi DSA001653
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3.5V zener diode
Abstract: 68A diode SC-59A Hitachi DSA00493
Text: ADE-208-351 Z HZM6.8WA Silicon Epitaxial Planar Zener Diode for Surge Absorb Rev. 0 May.1995 Features Outline • HZM6.8WA has two devices, and can absorb external + and −surge. • MPAK Package is suitable for high density surface mounting and high speed assembly.
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ADE-208-351
SC-59A
3.5V zener diode
68A diode
SC-59A
Hitachi DSA00493
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3.5V zener diode
Abstract: ADE-208-442A high speed Zener Diode
Text: HZM6.8FA Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-442A Z Rev 1 Features • • HZM6.8FA has four devices, and can absorb external + and -surge. MPAK-5 Package is suitable for high density surface mounting and high speed assembly. Ordering Information
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ADE-208-442A
150pF,
3.5V zener diode
high speed Zener Diode
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diode sg 64
Abstract: SG5774AJ SG5772J SG25768 sf 819 d 1N5772 JANTX 1N5768 SG25770J
Text: , SG5768/68A SG5770/70A, SG5772/72A, SG5774/74A SG25768, SG25770, SG6496/96A DIODE ARRAY CIRCUITS SILICON GENERAL LINEAR IN TEGRATED CIRCUITS DESCRIPTION FEATURES The Silicon General series of diode arrays feature high breakdown, high speed diodes in a variety of configurations.
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SG5768/68A
SG5770/70A,
SG5772/72A,
SG5774/74A
SG25768,
SG25770,
SG6496/96A
500mA
14-PIN
diode sg 64
SG5774AJ
SG5772J
SG25768
sf 819 d
1N5772 JANTX
1N5768
SG25770J
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DSAIH0002555
Abstract: No abstract text available
Text: B K C INT ERNAT IO NA L Ü3E D | 1 1 7 ^ 0 3 ODDDOfli _Type N0.IN 68A 7^ 0 / - 0 7 GOLD BONDED GERMANIUM DIODE 6 Lake Street PO Box 1436 Lawrence, MA 01841 BKC Internationa! Electronics Inc. Telephone 617 681-0392 TeleFax (617) 681-9135 Telex 928377
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MIL-S-19500,
DSAIH0002555
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PDF
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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HZM6.8WA
Abstract: 3.5V zener diode
Text: HZM6.8WA Silicon Epitaxial Planar Zener Diode for Surge Absorb Features Outline • HZM6.8WA has two devices, and can absorb external + and -surge. • MPAK Package is suitable for high density surface mounting and high speed assembly. Top View , Cathode
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150pF,
R-330Q
HZM6.8WA
3.5V zener diode
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What is a TRANSZORB
Abstract: SCL20A 1N6302A 1.5KE 180A keytek* 424 generator SCM120A diode 1.5ke 13A 5643A 1N6042A 5kp28a, 15000W reco relay
Text: TransZorb PROVIDING PROTECTION FOR • Telecommunications • Military • Computer • Industrial • Test & Instrumentation • Medical • Automotive GENERAL SEMICONDUCTOR INDUSTRIES, INC. A TransZorb® is a class o f diode, tw o term inal, that is designed
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Untitled
Abstract: No abstract text available
Text: HZM6.8FA Silicon Epitaxial Planar Zener Diode for Surge Absorb HITACHI ADE-208-442A Z Rev 1 Features • HZM6.8FA has four devices, and can absorb external + and -surge. • MPAK-5 Package is suitable for high density surface mounting and high speed assembly.
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OCR Scan
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ADE-208-442A
150pF,
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PDF
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Untitled
Abstract: No abstract text available
Text: HZM6.8WA Silicon Epitaxial Planar Zener Diode for Surge Absorb HITACHI ADE-208-351 Z Rev. 0 May. 1995 Features • HZM6.8WA has two devices, and can absorb external + and - surge. • MPAK Package is suitable for high density surface mounting and high speed assembly.
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OCR Scan
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ADE-208-351
150pF,
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PDF
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Untitled
Abstract: No abstract text available
Text: HZM6.8FA Silicon Epitaxial Planar Zener Diode for Surge Absorb HITACHI A D E -208-442A Z Rev 1 Features • HZM6.8FA has four devices, and can absorb external + and -Surge. • MPAK-5 Package is suitable for high density surface mounting and high speed assembly.
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OCR Scan
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-208-442A
150pF,
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PDF
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Untitled
Abstract: No abstract text available
Text: ADE-208-351 Z HZM6.8WA Silicon Epitaxial Planar Zener Diode for Surge Absorb HITACHI Features Rev. 0 May. 1995 Outline • HZM6.8WA has two devices, and can absorb external + and -surge. • MPAK Package is suitable for high density surface mounting and high speed assembly.
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OCR Scan
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ADE-208-351
SC-59A
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PDF
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Untitled
Abstract: No abstract text available
Text: ADE-208-351 Z HZM6.8WA Silicon Epitaxial Planar Zener Diode for Surge Absorb HITACHI Features Rev. 0 May. 1995 Outline • HZM6.8WA has two devices, and can absorb external + and -surge. • MPAK Package is suitable for high density surface mounting and high speed assembly.
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ADE-208-351
SC-59A
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PDF
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