1N817
Abstract: 1N5817 1N5819 1n5819 data sheet 1N5819 package data sheet for 1N5817 DIODE 1N5819 dc 1N5818 1N5817 Philips
Text: Philips Semiconductors Product specification S ch o ttky b arrier dio des 1N 5817; 1 N 5 818; 1N 5819 FEATURES DESCRIPTION • Low switching losses The 1N5817 to 1N5819 types are Schottky barrier diodes fabricated in planar technology, and encapsulated in SOD81 hermetically sealed glass packages
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1N5817;
1N5818;
1N5819
1N5817
1N5819
711DfiSb
7110fl2b
1N817
1n5819 data sheet
1N5819 package
data sheet for 1N5817
DIODE 1N5819 dc
1N5818
1N5817 Philips
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Untitled
Abstract: No abstract text available
Text: SPD5817 thru SPD5819 SPD5817SMS thru SPD5819SMS SPD5817VSMS thru SPD5819VSMS Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com Designer’s Data Sheet 1 AMP
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SPD5817
SPD5819
SPD5817SMS
SPD5819SMS
SPD5817VSMS
SPD5819VSMS
MIL-STD-750,
SPD5817,
SPD5818,
SPD5819,
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diode 5817 specifications
Abstract: transistor sms SPD5817 SPD5817SMS SPD5817VSMS SPD5818 SPD5819 SPD5819SMS SPD5819VSMS diode 5817
Text: SPD5817 thru SPD5819 SPD5817SMS thru SPD5819SMS SPD5817VSMS thru SPD5819VSMS Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com Designer’s Data Sheet 1 AMP
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SPD5817
SPD5819
SPD5817SMS
SPD5819SMS
SPD5817VSMS
SPD5819VSMS
MIL-STD-750,
SPD5817,
SPD5818,
SPD5819,
diode 5817 specifications
transistor sms
SPD5818
SPD5819
SPD5819SMS
SPD5819VSMS
diode 5817
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SPD5818
Abstract: SPD5817 SPD5817SMS SPD5817VSMS SPD5819 SPD5819SMS SPD5819VSMS
Text: SPD5817 thru SPD5819 SPD5817SMS thru SPD5819SMS SPD5817VSMS thru SPD5819VSMS Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com Designer’s Data Sheet 1 AMP
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SPD5817
SPD5819
SPD5817SMS
SPD5819SMS
SPD5817VSMS
SPD5819VSMS
MIL-STD-750,
SPD5817,
SPD5818,
SPD5819,
SPD5818
SPD5819
SPD5819SMS
SPD5819VSMS
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diode 5817 specifications
Abstract: MIL-STD-750 Method 2076 diode 5819 SPD5817 SPD5817SMS SPD5817VSMS SPD5818 SPD5819 SPD5819SMS SPD5819VSMS
Text: SPD5817 thru SPD5819 SPD5817SMS thru SPD5819SMS SPD5817VSMS thru SPD5819VSMS Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com Designer’s Data Sheet 1 AMP
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SPD5817
SPD5819
SPD5817SMS
SPD5819SMS
SPD5817VSMS
SPD5819VSMS
MIL-STD-750,
SPD5817,
SPD5818,
SPD5819,
diode 5817 specifications
MIL-STD-750 Method 2076
diode 5819
SPD5818
SPD5819
SPD5819SMS
SPD5819VSMS
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RS0293
Abstract: RS0293L MIL-STD-750 Method 2076 diode 5817 specifications SPD5817 SPD5817SMS SPD5817VSMS SPD5818 SPD5819 SPD5819SMS
Text: SPD5817 thru SPD5819 SPD5817SMS thru SPD5819SMS SPD5817VSMS thru SPD5819VSMS Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com Designer’s Data Sheet 1 AMP
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SPD5817
SPD5819
SPD5817SMS
SPD5819SMS
SPD5817VSMS
SPD5819VSMS
MIL-STD-750,
SPD5817,
SPD5818,
SPD5819,
RS0293
RS0293L
MIL-STD-750 Method 2076
diode 5817 specifications
SPD5818
SPD5819
SPD5819SMS
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MIL-STD-750 Method 2076
Abstract: No abstract text available
Text: SPD5817 thru SPD5819 SPD5817SMS thru SPD5819SMS SPD5817VSMS thru SPD5819VSMS Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com Designer’s Data Sheet 1 AMP
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SPD5817
SPD5819
SPD5817SMS
SPD5819SMS
SPD5817VSMS
SPD5819VSMS
MIL-STD-750,
Moun818,
SPD5819,
RS0293L
MIL-STD-750 Method 2076
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1N 5819 diode
Abstract: No abstract text available
Text: 1N5817-1N5819 Vishay Lite-On Power Semiconductor 1 .OA Schottky Barrier Rectifiers Features • S c h o ttk y b a rrie r ch ip • G u a rd ring die c o n s tru c tio n fo r tra n s ie n t p ro te c tio n • H igh s u rg e c a p a b ility • L o w p o w e r loss, hig h e ffic ie n c y
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1N5817-1N5819
D-74025
24-Jun-98
1N 5819 diode
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1N5817
Abstract: 1N5819 SPD5817 SPD5819 Solid State Devices for 1N5817 N3BB
Text: SOLI» STATE DEVICES INC 12E 1 |fl3bbDll □ □ □ n C H =] 5 R 8 /3 D THRU 1 5 R 8 /3 D 100 AM P EPIO Nn HIGH SPEED RECTIFIER 5 0 -1 5 0 V O LT S CASE STYLE R TO—3 WITH .060 PINS MAXIMUM RATINGS FEATURES RADIATION TOLERANT ULTRA FAST RECOVERY 7 5 NSEC MAX
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fl3bb011
15R8/3D
10R8/3D
12R8/3D
SPD0801
300/is
SPD1001
300us
SPD0901
1N5817
1N5819
SPD5817
SPD5819
Solid State Devices
for 1N5817
N3BB
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diode marking N9
Abstract: No abstract text available
Text: DAN222M3T5G Common Cathode Silicon Dual Switching Diode This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SOT−723 package which is designed for low power surface mount applications, where board space is at a premium.
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DAN222M3T5G
OT-723
631AA
DAN222M3/D
diode marking N9
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Untitled
Abstract: No abstract text available
Text: DAN222, NSVDAN222 Common Cathode Silicon Dual Switching Diode This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SOT−416/SC−75 package which is designed for low power surface mount applications, where board space is at a
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DAN222,
NSVDAN222
OT-416/SC-75
AEC-Q101
DAN222/D
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Untitled
Abstract: No abstract text available
Text: BAS16WT1G, SBAS16WT1G Silicon Switching Diode Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique • Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
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BAS16WT1G,
SBAS16WT1G
BAS16WT1/D
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Untitled
Abstract: No abstract text available
Text: BAV70WT1G, SBAV70WT1G Dual Switching Diode Common Cathode Features http://onsemi.com • AEC−Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
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BAV70WT1G,
SBAV70WT1G
AEC-Q101
OT-323
BAV70WT1/D
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Untitled
Abstract: No abstract text available
Text: M1MA141WAT1G, M1MA142WAT1G, SM1MA142WAT1G Common Anode Silicon Dual Switching Diode http://onsemi.com This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC−70 package which is designed for low
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M1MA141WAT1G,
M1MA142WAT1G,
SM1MA142WAT1G
SC-70
AEC-Q101
SC-70
OT-323)
M1MA141WAT1G
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Untitled
Abstract: No abstract text available
Text: M1MA141WKT1G, M1MA142WKT1G, SM1MA142WKT1G, Common Cathode Silicon Dual Switching Diode http://onsemi.com This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC−70 package which is designed for low
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M1MA141WKT1G,
M1MA142WKT1G,
SM1MA142WKT1G,
SC-70
AEC-Q101
SC-70
OT-323)
M1MA141WKT1G
SM1MA142WKT1G
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PDF
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Untitled
Abstract: No abstract text available
Text: BAV70WT1G, SBAV70WT1G Dual Switching Diode Common Cathode Features http://onsemi.com • AEC−Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
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BAV70WT1G,
SBAV70WT1G
BAV70WT1/D
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NSVBAS21
Abstract: marking code js sod323
Text: BAS21HT1, NSVBAS21HT1G, NSVBAS21HT3G High Voltage Switching Diode http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable • NSV Prefix for Automotive and Other Applications Requiring • HIGH VOLTAGE SWITCHING DIODE Unique Site and Control Change Requirements
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BAS21HT1,
NSVBAS21HT1G,
NSVBAS21HT3G
AEC-Q101
OD-323
BAS21HT1/D
NSVBAS21
marking code js sod323
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Untitled
Abstract: No abstract text available
Text: M1MA141WKT1G, M1MA142WKT1G, SM1MA142WKT1G, Common Cathode Silicon Dual Switching Diode http://onsemi.com This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC−70 package which is designed for low
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M1MA141WKT1G,
M1MA142WKT1G,
SM1MA142WKT1G,
M1MA141WKT1/D
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PDF
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Diode marking CODE 5M SOD
Abstract: No abstract text available
Text: NSD914XV2T1 High-Speed Switching Diode Features • • • • • High−Speed Switching Applications Lead Finish: 100% Matte Sn Tin Qualified Maximum Reflow Temperature: 260°C Extremely Small SOD−523 Package Pb−Free Package is Available http://onsemi.com
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NSD914XV2T1
OD-523
NSD914XV2T1/D
Diode marking CODE 5M SOD
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Untitled
Abstract: No abstract text available
Text: MMBD2835LT1G, MMBD2836LT1G, SMMBD2835LT1G Monolithic Dual Switching Diodes http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
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MMBD2835LT1G,
MMBD2836LT1G,
SMMBD2835LT1G
236AB)
MMBD2836LT1G
MMBD2835LT1/D
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diode T3 Marking
Abstract: No abstract text available
Text: NUP1301ML3T1, SZNUP1301ML3T1 Low Capacitance Diode Array for ESD Protection in a Single Data Line NUP1301ML3T1 is a MicroIntegration device designed to provide protection for sensitive components from possible harmful electrical transients; for example, ESD electrostatic discharge .
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NUP1301ML3T1,
SZNUP1301ML3T1
NUP1301ML3T1
JESD22
OT-23
IEC61000-4-2
NUF1301ML3T1/D
diode T3 Marking
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Untitled
Abstract: No abstract text available
Text: BAV70LT1G, SBAV70LT1G, BAV70LT3G, SBAV70LT3G Dual Switching Diode Common Cathode http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique • Site and Control Change Requirements
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BAV70LT1G,
SBAV70LT1G,
BAV70LT3G,
SBAV70LT3G
AEC-Q101
OT-23
O-236)
BAV70LT1/D
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PDF
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SMMBD2835LT1G
Abstract: No abstract text available
Text: MMBD2835LT1G, MMBD2836LT1G, SMMBD2835LT1G Monolithic Dual Switching Diodes http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
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MMBD2835LT1G,
MMBD2836LT1G,
SMMBD2835LT1G
AEC-Q101
236AB)
MMBD2836LT1G
MMBD2835LT1/D
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BAV99LT1G
Abstract: No abstract text available
Text: BAV99LT1G, SBAV99LT1G, BAV99LT3G, SBAV99LT3G Dual Series Switching Diode http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements CASE 318
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BAV99LT1G,
SBAV99LT1G,
BAV99LT3G,
SBAV99LT3G
BAV99LT1/D
BAV99LT1G
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