APT2*61D120J
Abstract: APT10035LLL APT2X60D120J APT2X61D120J H100 sgs 8 r 15
Text: 2 3 2 2 3 1 1 4 1 3 4 4 Anti-Parallel Parallel APT2X60D120J APT2X61D120J 27 2 T- SO APT2X61D120J 1200V 53A APT2X60D120J 1200V 53A DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode
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APT2X61D120J
APT2X60D120J
APT2X60D120J
APT2X61D120J
OT-227
APT2*61D120J
APT10035LLL
H100
sgs 8 r 15
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APT2*61D120J
Abstract: No abstract text available
Text: 2 3 2 2 3 3 1 1 4 1 SO 4 Anti-Parallel Parallel APT2X60D120J APT2X61D120J 27 2 T- 4 APT2X61D120J 1200V 53A APT2X60D120J 1200V 53A DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode
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APT2X60D120J
APT2X61D120J
APT2X61D120J
APT2X60D120J
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APT2*61D120J
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L-53AEIR1BC
Abstract: L-53AEIR1C L-53AEIR2BC L-53AEIR2C
Text: L-53AEIRXX 5.0mm INFRARED EMITTING DIODE ◆PACKAGE DIMENSIONS ◆ABSOLUTE MAXIMUN RATING: Ta=25℃ ℃ PD（mw） Part No. VR（V） Topr Tstg -35℃ to 85℃ -35℃ to 85℃ Operating Temperature Storage Temperature PARAMETER Power Dissipation Reverse Voltage
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L-53AEIRXX
L-53AEIR1C
L-53AEIR1BC
L-53AEIR2C
L-53AEIR2BC
100mA
21/2Age
L-53AEIR1BC
L-53AEIR1C
L-53AEIR2BC
L-53AEIR2C
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APT2X60D120J
Abstract: APT2*61D120J APT10035LLL APT2X61D120J
Text: 2 1 3 4 2 1 Anti-Parallel APT2X60D120J 3 4 2 1 3 4 SO Parallel APT2X61D120J 2 T- 27 "UL Recognized" ISOTOP file # E145592 ® APT2X61D120J APT2X60D120J 1200V 1200V 53A 53A DUAL DIE ISOTOP® PACKAGE ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS
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APT2X60D120J
APT2X61D120J
E145592
OT-227
APT2X60D120J
APT2*61D120J
APT10035LLL
APT2X61D120J
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Untitled
Abstract: No abstract text available
Text: 2 1 3 4 2 1 Anti-Parallel APT2X60D120J 3 4 2 1 3 4 Parallel APT2X61D120J 7 22 TO S "UL Recognized" ISOTOP ® APT2X61D120J APT2X60D120J 1200V 1200V 53A 53A DUAL DIE ISOTOP® PACKAGE ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES
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APT2X60D120J
APT2X61D120J
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Untitled
Abstract: No abstract text available
Text: 2 1 3 4 2 1 Anti-Parallel APT2X60D120J 3 4 2 1 3 4 SO Parallel APT2X61D120J 2 T- 27 "UL Recognized" ISOTOP file # E145592 ® APT2X61D120J APT2X60D120J 1200V 1200V 53A 53A DUAL DIE ISOTOP® PACKAGE ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT FEATURES
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APT2X60D120J
APT2X61D120J
E145592
OT-227
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infrared circuit
Abstract: infrared transistor infrared diode L-53AEIR1BC L-53AEIR1C L-53AEIR2BC L-53AEIR2C
Text: L-53AEIRXX 5.0mm INFRARED EMITTING DIODE ¡ »ABSOLUTE MAXIMUN RATING: Ta=25ºC PD (mw) Part No. V(BR)R (V) Topr Tstg -35ºC to 85ºC Operating Temperature Reverse Voltage Power Dissipation PARAMETER Range Lead Soldering Temperature {1.6mm(0.063 inch)From Body}250ºC 5ºC For 3 Seconds
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L-53AEIRXX
L-53AEIRXX
L-53AEIR1C
L-53AEIR1BC
L-53AEIR2C
L-53AEIR2BC
100mA
infrared circuit
infrared transistor
infrared diode
L-53AEIR1BC
L-53AEIR1C
L-53AEIR2BC
L-53AEIR2C
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PSCH 50
Abstract: REC 53A DSA0016070 W1050
Text: Single Phase Half Controlled Bridges with freewheeling diode PSCH 50 IdAV VRRM = 53A = 400-1600 V Preliminary Data Sheet VRSM VDSM 500 900 1300 1500 *1700 VRRM VDRM 400 800 1200 1400 *1600 Type PSCH 50/04 PSCH 50/08 PSCH 50/12 PSCH 50/14 PSCH 50/16 ~ ~ * Delivery on request
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43a 504
Abstract: 17550 APT53F80J MIC4452
Text: APT53F80J 800V, 53A, 0.13Ω Max, trr ≤470ns N-Channel FREDFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
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APT53F80J
470ns
43a 504
17550
APT53F80J
MIC4452
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Untitled
Abstract: No abstract text available
Text: APT53F80J 800V, 53A, 0.13Ω Max, trr ≤470ns N-Channel FREDFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
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APT53F80J
470ns
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33A zener diode
Abstract: zener diode 46a
Text: SMA4728A~SMA4764A Zener diode Features 1. For surface mounted applications 2. Low zener impedance 3. Low regulation factor 4. VZ-tolerance±5% Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Type Symbol Value
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SMA4728A
SMA4764A
1-Jul-2004
DO-214AC
33A zener diode
zener diode 46a
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zener diode 46a
Abstract: ZENER DIODE IN 47 1W 47A zener diode 54A SMA4754A
Text: SMA4728A THRU SMA4764A PB FREE PRODUCT 1W GLASS PASSIVATED JUNCTION SILICON ZENER DIODE FEATURES ● ● ● ● ● ● ● Glass passivated chip Low leakage Built-in strain relief Low inductance High peak reverse power dissipation Lead Pb -free component
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SMA4728A
SMA4764A
MIL-STD-202,
SMA4758A
SMA4759A
SMA4760A
SMA4761A
SMA4762A
SMA4763A
zener diode 46a
ZENER DIODE IN 47 1W 47A
zener diode 54A
SMA4754A
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Untitled
Abstract: No abstract text available
Text: LM3535 www.ti.com SNVS598 – AUGUST 2010 LM3535 Multi-Display LED Driver with Ambient Light Sensing and Dynamic Backlight Control Compatibility Check for Samples: LM3535 FEATURES 1 • 2 • • • • • • • • Drives up to 8 LEDs with up to 25mA of Diode
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LM3535
SNVS598
LM3535
LM3535-2ALS
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zener zp 278
Abstract: Zener Diode minimelf Zener diode wz 162 krc 118 056 diode 918b zener diode 182 KD6 Z7 ZENER DIODE 18-2 diode 368b h25b
Text: MCC TM Micro Commercial Components ZENER DIODES 500mW ZENER DIODE / DODO-35 MCC PART NUMBER NOMINAL ZENER VOLTAGE VZ @ IZT VOLTS TEST CURRENT IZT mA MAXIMUM ZENER IMPEDANCE ‘B’ SUFFIX ONLY ZZT @ IZT Ω 1N5221B 2.4 20 30 1N5222B 2.5 20 30 1N5223B 2.7 20
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500mW
DODO-35
1N5221B
1N5222B
1N5223B
1N5224B
1N5225B
1N5226B
1N5227B
1N5228B
zener zp 278
Zener Diode minimelf
Zener diode wz 162
krc 118 056
diode 918b
zener diode 182
KD6 Z7
ZENER DIODE 18-2
diode 368b
h25b
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Untitled
Abstract: No abstract text available
Text: 1SMA4728A – SZ1330A 1.0W SURFACE MOUNT ZENER DIODE WON-TOP ELECTRONICS Pb Features Glass Passivated Die Construction 1.0W Power Dissipation 3.3V – 330V Nominal Zener Voltage 5% Standard Vz Tolerance Low Inductance For Use in Voltage Regulator or Reference
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1SMA4728A
SZ1330A
SMA/DO-214AC,
MIL-STD-750,
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Untitled
Abstract: No abstract text available
Text: SML4728A – SMZ1330A 1.0W SURFACE MOUNT ZENER DIODE WON-TOP ELECTRONICS Pb Features Low Profile 1.33mm Max. Case Height 1.0W Power Dissipation 3.3V – 330V Nominal Zener Voltage 5% Standard Vz Tolerance Low Inductance For Use in Voltage Regulator or Reference
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SML4728A
SMZ1330A
OD-123FL
OD-123FL,
MIL-STD-202,
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Untitled
Abstract: No abstract text available
Text: LM2756 www.ti.com SNVS504B – JULY 2007 – REVISED DECEMBER 2007 LM2756 Multi-Display Inductorless LED Driver with 32 Exponential Dimming Steps in micro SMD Check for Samples: LM2756 FEATURES 1 • 2 • • • • • • • Drives up to 8 LEDs with up to 30mA of Diode
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LM2756
SNVS504B
LM2756
21mm2
615mm
015mm
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Untitled
Abstract: No abstract text available
Text: LM3535 www.ti.com SNVS598 – AUGUST 2010 LM3535 Multi-Display LED Driver with Ambient Light Sensing and Dynamic Backlight Control Compatibility Check for Samples: LM3535 FEATURES • 1 • 2 • • • • • • • • • • • • • • • Drives Up to 8 LEDs With Up to 25mA of Diode
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LM3535
SNVS598
LM3535
LM3535-2ALS
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Untitled
Abstract: No abstract text available
Text: LM3535 www.ti.com SNVS598 – AUGUST 2010 LM3535 Multi-Display LED Driver with Ambient Light Sensing and Dynamic Backlight Control Compatibility Check for Samples: LM3535 FEATURES • 1 • 2 • • • • • • • • • • • • • • • Drives Up to 8 LEDs With Up to 25mA of Diode
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LM3535
SNVS598
LM3535
LM3535-2ALS
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617mA
Abstract: E1 3007
Text: LM3535 www.ti.com SNVS598 – AUGUST 2010 LM3535 Multi-Display LED Driver with Ambient Light Sensing and Dynamic Backlight Control Compatibility Check for Samples: LM3535 FEATURES • 1 • 2 • • • • • • • • • • • • • • • Drives Up to 8 LEDs With Up to 25mA of Diode
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LM3535
SNVS598
LM3535
LM3535-2ALS
617mA
E1 3007
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CVD-450
Abstract: Laser Diode 808 nm
Text: LASER DIODE INC 1SE D I Sl&EI&B DODDMSl 5 I T -fh O f C VD-400 SERIES LASER DIODE, INC. QUASI CW LASER DIODE ARRAYS FEATURES: ► ► ► ► ► ► ► DESCRIPTION: The CVD-400 series lasers are Gallium Aluminum Arse nide Monolithic Quantum Well Arrays made by MOCVD
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VD-400
CVD-400
CVD-450
Laser Diode 808 nm
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Thyristor Xo 602 MA
Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Text: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and
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904nm
Abstract: GaAs 904nm LD67 LD61 LD60 LP-23C 904nm laser diode
Text: r LASER DIODE INC 15E D I SBÖSTÖS QDGGMSS E | a •a a I T -H I “ OS' _LD-60 SERIES_ LASER DIODE, INC. SINGLE HETEROJUNCTION GaAs LASER DIODES FEATURES High Efficiency at Low Drive Currents P Up to 20 Watts Peak Power Output P Operation to 75° C for Selected Devices
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LD-60
904nm,
904nm
GaAs 904nm
LD67
LD61
LD60
LP-23C
904nm laser diode
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IXSN50N60U1
Abstract: 25CC E72873 50N60 50N60U1
Text: 4 b û b 2 2 b □ □ □ 1 7 ‘ìl 3flT • IX Y □IXYS IGBT with Diode IXSN50N60U1 >c V .„ High Short Circuit SOA Capability =53A = 600 V VcE<sa„ = 2-5 V 2 4 S ym bol T e st C o n d itio n s 'T l M axim um R a tin g s VcES T j = 25°C to 150°C 600
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IXSN50N60U1
D-68619
25CC
E72873
50N60
50N60U1
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