zd1 1014
Abstract: 217F C10A C12A capacitor ceramic optocupler transistor MTBF
Text: Data Base : MIL - HDBK - 217F Environment : Ground benign , 25℃ Load : 110VAC input , Full load Unit : ZPD40-512 Ver: V1.0 Date: 11/29/2004 CAT TYPE Q'ty 5.1 Microcircuits,MOS 1 6.1 Diode,General 1 6.1 Diode,General 1 6.1 Diode, Schottky 1 6.1 Diode, Schottky
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110VAC
ZPD40-512
zd1 1014
217F
C10A
C12A
capacitor ceramic
optocupler
transistor MTBF
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LDTC0520
Abstract: WTC3243 PLD10K-CH WLD3343 cables WHY5690 PLD-10 laser diode driver 200 mhz Quantum cascade laser PID1500
Text: Quantum Cascade & Laser Diode Drivers & Temperature Controllers TEMPERATURE CONTROL DUAL LASER DRIVER QCL MODEL NUMBER QCL Series Quantum Cascade Laser Drivers Chassis Mount PLD-CH Series Laser Diode Drivers PLD PCB Series Laser Diode Drivers WLD3343 Series Laser Diode Drivers &
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WLD3343
WLD3393
14-Pin
FL500
FL593
LDTCxx20
WTC3243
WTC3293
WHY5640
LDTC0520
PLD10K-CH
cables
WHY5690
PLD-10
laser diode driver 200 mhz
Quantum cascade laser
PID1500
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Untitled
Abstract: No abstract text available
Text: ar y n i im prel iC-HT DUAL CW LASER DIODE DRIVER Rev B1, Page 1/45 FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Laser diode and LED modules ♦ CW N-/M-type laser diode drivers ♦ Embedded laser diode
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QFN28
QFN28-5x5
D-55294
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MAD130P
Abstract: 2N1711 solid state BC237 MARKING CODE diode sod123 t3 H3T-B MPS4258 bf244 MSA1022 Bf391 BCY72
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Diode Array MMAD1108 Surface Mount Isolated 8–Diode Array This diode array is a multiple diode junction fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching
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MMAD1108
De218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
MAD130P
2N1711 solid state
BC237
MARKING CODE diode sod123 t3
H3T-B
MPS4258
bf244
MSA1022
Bf391
BCY72
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RHR15120
Abstract: RHR15120 fairchild make DIODE RHR15120 RHR15120 datasheet RHRP15120 TA49098
Text: RHRP15120 Data Sheet January 2000 File Number 3677.2 15A, 1200V Hyperfast Diode Features Title HR 512 The RHRP15120 is a hyperfast diode with soft recovery characteristics trr < 65ns . It has half the recovery time of ultrafast diodes and is of silicon nitride passivated
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RHRP15120
RHRP15120
RHR15120
RHR15120 fairchild make
DIODE RHR15120
RHR15120 datasheet
TA49098
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RURG75120
Abstract: No abstract text available
Text: RURG75120 Data Sheet January 2000 File Number 3412.3 75A, 1200V Ultrafast Diode Features Title UR 512 The RURG75120 is an ultrafast diode with soft recovery characteristics trr < 125ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial
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RURG75120
RURG75120
125ns)
125ns
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tyco mil relay
Abstract: To5 transistor header Transistor 187 terminal configuration Mil-R-39016 TRANSISTOR 287 A
Text: 1MA 1MAD 1MADD 1MAT TO-5 HIGH-PERFORMANCE RELAYS • ■ ■ 1MA 1MAD 1MADD 1MAT STANDARD TO-5 HIGH-PERFORMANCE RELAY STANDARD TO-5 DIODE SUPPRESSED HIGH-PERFORMANCE RELAY STANDARD TO-5 DIODE SUPPRESSED/PROTECTED HIGH-PERFORMANCE RELAY STANDARD TO-5 DIODE
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MIL-R-39016/7
MIL-R-39016/23
MIL-R-39016/24
MIL-R-28776/5
tyco mil relay
To5 transistor header
Transistor 187 terminal configuration
Mil-R-39016
TRANSISTOR 287 A
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1842m
Abstract: DIODE 4d LDD400-1P ldd200 2i125 LDD200-2P
Text: LDD P Series Laser Diode Drivers Pb GENERAL DESCRIPTION: The LDD P Series of laser diode drivers come in three compact models to work with all laser diode / photodiode configurations. Each model is available in 200mA and 400mA versions to best fit your laser
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200mA
400mA
Aug-05
29-Sep-09
LDD200P-00400-A
1842m
DIODE 4d
LDD400-1P
ldd200
2i125
LDD200-2P
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DIODE 4d
Abstract: LDD200-1P ldd200 LDD400-1P LDDCAB-50 LDD200-2P DIODE 1N4001 LDD200P-00400 LDD400-3P DD200-1P
Text: LDD P Series Laser Diode Drivers Pb GENERAL DESCRIPTION: The LDD P Series of laser diode drivers come in three compact models to work with all laser diode / photodiode configurations. Each model is available in 200mA and 400mA versions to best fit your laser
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200mA
400mA
Aug-05
29-Sep-09
LDD200P-00400-A
DIODE 4d
LDD200-1P
ldd200
LDD400-1P
LDDCAB-50
LDD200-2P
DIODE 1N4001
LDD200P-00400
LDD400-3P
DD200-1P
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A 3150 igbt driver
Abstract: IR E78996 IRF E78996 ECONO2-6PACK IGBT module ir igbt 1200V 40A igbt qualification circuit E78996 IR GB25XF120K
Text: PD - 94569 GB25XF120K IGBT 6PACK MODULE Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF • 10µs Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft Diode Reverse Recovery Characteristics • Positive VCE (on) Temperature Coefficient
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GB25XF120K
A 3150 igbt driver
IR E78996
IRF E78996
ECONO2-6PACK IGBT module
ir igbt 1200V 40A
igbt qualification circuit
E78996 IR
GB25XF120K
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RHR15120
Abstract: RHR15120C RHRG15120CC TA49098
Text: RHRG15120CC Data Sheet Title HR 512 C bt A, 00V pert al ode) utho rpoon, pert al ode, ache File Number 3686.2 15A, 1200V Hyperfast Dual Diode Features The RHRG15120CC is a hyperfast dual diode with soft recovery characteristics trr < 65ns). It has half the recovery
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RHRG15120CC
RHRG15120CC
RHR15120
RHR15120C
TA49098
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RHRG75120
Abstract: No abstract text available
Text: RHRG75120 Data Sheet Title HR 512 bt A, 00V pert ode utho eyrds A, 00V pert ode, errpoon, minctor, ache ergy ted, itch wer pes, wer itch January 2000 File Number 3414.3 75A, 1200V Hyperfast Diode Features The RHRG75120 is a hyperfast diode with soft recovery
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RHRG75120
RHRG75120
175oC
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nec d 588
Abstract: PX10160E
Text: DATA SHEET LASER DIODE NX8517XC Series 1 470 TO 1 610 nm FOR CWDM 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE TOSA DESCRIPTION The NX8517XC is a 1 470 to 1 610 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical
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NX8517XC
nec d 588
PX10160E
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NX7314UA
Abstract: NX7315UA NX7312UA NX7313UA NX8310UA NX8311UD NX8510UD STM-16
Text: PRELIMINARY DATA SHEET LASER DIODE NX8510UD Series 1 470 TO 1 610 nm FOR CWDM 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE TOSA DESCRIPTION The NX8510UD is a 1 470 to 1 610 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical
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NX8510UD
NX7314UA
NX7315UA
NX7312UA
NX7313UA
NX8310UA
NX8311UD
STM-16
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RURG15120CC
Abstract: URG15120C
Text: RURG15120CC Data Sheet Title UR 512 C bt A, 00V rafa Dual ode) utho eyrds A, 00V rafa Dual ode, errpoon, minctor, ache ergy ted, itch wer pes, wer itch January 2000 File Number 3695.2 15A, 1200V Ultrafast Dual Diode Features The RURG15120CC is an ultrafast dual diode with soft
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RURG15120CC
RURG15120CC
100ns)
100ns
URG15120C
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BFY 99
Abstract: NX8300BE-CC NX8300CE-CC NX8303BG-CC NX8303CG-CC NX8304BE-CC NX8304CE-CC NX8503BG-CC NX8508 BFY10
Text: PRELIMINARY DATA SHEET LASER DIODE NX8508 Series 1 470 TO 1 610 nm InGaAsP MQW-DFB LASER DIODE COAXIAL MODULE FOR 2.5 Gb/s, CWDM DESCRIPTION The NX8508 Series is a 1 470 to 1 610 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode coaxial module with an
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NX8508
BFY 99
NX8300BE-CC
NX8300CE-CC
NX8303BG-CC
NX8303CG-CC
NX8304BE-CC
NX8304CE-CC
NX8503BG-CC
BFY10
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2N643
Abstract: BC237 MARKING DP SOT-363 DO204AA
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
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MMBD1010LT1
MMBD2010T1
MMBD3010T1
MMBD1010LT1
S218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
2N643
BC237
MARKING DP SOT-363
DO204AA
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BC237
Abstract: MMBD2005T1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
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MMBD1005LT1
MMBD2005T1
MMBD3005T1
MMBD1005LT1
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
BC237
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marking dp sot363
Abstract: BC237 transistor BF245 A marking A5 sot363 2N2222A plastic bc849 MMBD1010LT1 bf245 equivalent marking code a5 sot363
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
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MMBD1010LT1
MMBD2010T1
MMBD3010T1
MMBD1010LT1
S218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
marking dp sot363
BC237
transistor BF245 A
marking A5 sot363
2N2222A plastic
bc849
bf245 equivalent
marking code a5 sot363
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2N301
Abstract: BC237 5111 sot-23 BC547 sot package sot-23 2N5670 equivalent
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
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MMBD1005LT1
MMBD2005T1
MMBD3005T1
MMBD1005LT1
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
2N301
BC237
5111 sot-23
BC547 sot package sot-23
2N5670 equivalent
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NX8501
Abstract: NX8501AC NX8501AC-BA NX8501AC-CA NX8501BC NX8501CC 25TC
Text: DATA SHEET LASER DIODE NX8501 Series 1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE DESCRIPTION The NX8501 Series is a 1 510 nm phase-shifted DFB Distributed Feed-Back laser diode with single mode fiber. The Multiple Quantum Well (MQW) structure is adopted to achieve stable dynamic single longitudinal mode operation
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NX8501
TA-NWT-000983
NX8501AC
NX8501AC-BA
NX8501AC-CA
NX8501BC
NX8501CC
25TC
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nec d 588
Abstract: NEC DIODE LASER PS2001
Text: DATA SHEET LASER DIODE NX6508 Series 1 470 TO 1 610 nm FOR 2.5 Gb/s, CWDM InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6508 Series is a 1 470 to 1 610 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD. These devices are ideal for 2.5 Gb/s CWDM application.
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NX6508
nec d 588
NEC DIODE LASER
PS2001
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NX5501
Abstract: NX5304 NX5306 NX5307 NX5504 NX6306 NX6307 NX6508 STM-16
Text: PRELIMINARY DATA SHEET LASER DIODE NX6508 Series 1 470 TO 1 610 nm FOR 2.5 Gb/s, CWDM InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6508 Series is a 1 470 to 1 610 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD. These devices are ideal for 2.5 Gb/s CWDM application.
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NX6508
NX5501
NX5304
NX5306
NX5307
NX5504
NX6306
NX6307
STM-16
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SMD DIODE 512
Abstract: smd sot23 marking l6 SMD MARKING CODE L6 smd schottky diode marking BP
Text: DISCRETE SEMICONDUCTORS DATA SHEET age M3D088 BAT720 Schottky barrier diode Product specification Supersedes data of 1999 May 26 2003 Mar 25 Philips Semiconductors Product specification Schottky barrier diode FEATURES BAT720 PINNING • Ultra high switching speed
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M3D088
BAT720
BAT720
13-Feb-03)
SMD DIODE 512
smd sot23 marking l6
SMD MARKING CODE L6
smd schottky diode marking BP
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