Diode marking CODE 5M
Abstract: diode 50M marking code LDTBG12GPWT1G transistor collector diode protection RADIO FREQUENCY transistor marking CODE
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTBG12GPWT1G zApplications Driver 3 zFeatures 1 High hFE. 300 Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA)
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LDTBG12GPWT1G
500mA
Diode marking CODE 5M
diode 50M marking code
LDTBG12GPWT1G
transistor collector diode protection
RADIO FREQUENCY transistor marking CODE
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Diode marking CODE 5M
Abstract: transistor collector diode protection RADIO FREQUENCY transistor marking CODE LDTDG12GPWT1G LDTDG12GPWT3G diode 50M marking code
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTDG12GPWT1G zApplications Driver 3 zFeatures 1 High hFE. 300 Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA)
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LDTDG12GPWT1G
500mA
Diode marking CODE 5M
transistor collector diode protection
RADIO FREQUENCY transistor marking CODE
LDTDG12GPWT1G
LDTDG12GPWT3G
diode 50M marking code
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marking KN sc70
Abstract: L2SK3018WT1G Diode marking CODE 5M DIODE MARKING code 05M
Text: LESHAN RADIO COMPANY, LTD. Silicon N-channel MOSFET 100 mA, 30 V L2SK3018WT1G 3 • Features 1 Low on-resistance. 2) Fast switching speed. 3) Low voltage drive 2.5V) makes this device ideal for portable equipment. 4) Easily designed drive circuits. 5) Easy to parallel.
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L2SK3018WT1G
SC-70
marking KN sc70
L2SK3018WT1G
Diode marking CODE 5M
DIODE MARKING code 05M
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L2SK3018WT1G
Abstract: l2sk3018
Text: LESHAN RADIO COMPANY, LTD. Silicon N-channel MOSFET 100 mA, 30 V L2SK3018WT1G S-L2SK3018WT1G • Features 1 Low on-resistance. 2) Fast switching speed. 3) Low voltage drive 2.5V) makes this device ideal for portable equipment. 4) Easily designed drive circuits.
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L2SK3018WT1G
S-L2SK3018WT1G
SC-70
AEC-Q101
L2SK3018WT1G
l2sk3018
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marking DIODE 2U 04
Abstract: DTDG23YP T100 marking 2U diode II1001 Diode marking CODE 5M
Text: DTDG23YP Transistors Digital transistor built-in resistors and zener diode , driver (60V, 1A) DTDG23YP zFeatures 1) High DC current gain. (Min. 300 at VO/IO=2V/0.5A) 2) Low output voltage. (Typ. 0.4V at IO/II=500/50mA) 3) Built-in zener diode gives strong protection against reverse.
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DTDG23YP
500/50mA)
marking DIODE 2U 04
DTDG23YP
T100
marking 2U diode
II1001
Diode marking CODE 5M
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sid9435
Abstract: 9435 mosfet mosfet 9435 to 9435 mosfet 9435 MOSFET code 9435 tr 9435 9435 power marking code 9435 9435 72
Text: SID9435 -20A, -30V,RDS ON 50m Ω P-Channel Enhancement Mode Power Mos.FET Elektronische Bauelemente RoHS Compliant Product TO-251 Description 2.3±0.1 6.6±0.2 5.3±0.2 The SID9435 utilized advanced processing techniques to 0.5±0.05 achieve the lowest possible on-resistance, extremely efficient
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SID9435
O-251
SID9435
O-251
01-Jun-2002
9435 mosfet
mosfet 9435 to
9435
mosfet 9435
MOSFET code 9435
tr 9435
9435 power
marking code 9435
9435 72
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marking code L17 diode
Abstract: marking l17 transistors l17 DTA144E EML17 RB520G-30 5M MARKING CODE SCHOTTKY DIODE mark l17
Text: EML17 Transistors General purpose transistor isolated transistor and diode EML17 DTA144E and a RB520G-30 are housed independently in a EMT package. zExternal dimensions (Unit : mm) zApplications DC / DC converter Motor driver EML17 1.6 0.5 1.0 0.5 0.5 (5) (4)
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EML17
DTA144E
RB520G-30
marking code L17 diode
marking l17
transistors l17
EML17
5M MARKING CODE SCHOTTKY DIODE
mark l17
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Untitled
Abstract: No abstract text available
Text: EML17 Transistors General purpose transistor isolated transistor and diode EML17 DTA144E and a RB520G-30 are housed independently in a EMT package. External dimensions (Unit : mm) Applications DC / DC converter Motor driver EML17 1.6 0.5 1.0 0.5 0.5 (5) (4)
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EML17
DTA144E
RB520G-30
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Untitled
Abstract: No abstract text available
Text: EML17 Transistors General purpose transistor isolated transistor and diode EML17 DTA144E and a RB520G-30 are housed independently in a EMT package. zExternal dimensions (Unit : mm) zApplications DC / DC converter Motor driver EML17 1.6 0.5 1.0 0.5 0.5 (5) (4)
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EML17
DTA144E
RB520G-30
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RB521S-30
Abstract: DTC123J EML20 Rohm diode 2U
Text: EML20 Transistors General purpose transistor isolated transistor and diode EML20 DTC123J A and RB521S-30 are housed independently in a EMT6 package. zExternal dimensions (Unit : mm) zApplications DC / DC converter Motor driver EMT6 1.6 0.5 1.0 0.5 0.5 (6) (5) (4)
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EML20
DTC123J
RB521S-30
EML20
Rohm diode 2U
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Untitled
Abstract: No abstract text available
Text: EML20 Transistors General purpose transistor isolated transistor and diode EML20 DTC123J A and RB521S-30 are housed independently in a EMT6 package. External dimensions (Unit : mm) Applications DC / DC converter Motor driver EMT6 1.6 0.5 1.0 0.5 0.5 (6) (5) (4)
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EML20
DTC123J
RB521S-30
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DTC123J
Abstract: EML20 RB521S-30
Text: EML20 Transistors General purpose transistor isolated transistor and diode EML20 DTC123J A and RB521S-30 are housed independently in a EMT6 package. zExternal dimensions (Unit : mm) zApplications DC / DC converter Motor driver EMT6 1.6 0.5 1.0 0.5 0.5 (6) (5) (4)
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EML20
DTC123J
RB521S-30
EML20
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DR marking
Abstract: 2SD1866 2SD2143 2SD2212 T100
Text: 2SD2212 / 2SD2143 / 2SD1866 Transistors Medium Power Transistor Motor, Relay drive (60±10V, 2A) 2SD2212 / 2SD2143 / 2SD1866 zExternal dimensions (Unit : mm) 2SD2212 4.0 1.5 0.4 1.0 2.5 0.5 (1) 1.6 0.5 3.0 (2) 4.5 zFeatures 1) Built-in zener diode between collector and base.
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2SD2212
2SD2143
2SD1866
2SD2212
SC-62
DR marking
2SD1866
T100
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marking jls
Abstract: No abstract text available
Text: Silicon PIN Diodes BAR 60 BAR 61 • For RF attenuation • Switching applications for frequencies above 10 MHz 3 Type Marking Ordering code tape and reel BAR 60 60 Q 62702 -A 7 8 6 Pin configuration Package SOT-143 io - E X - BAR 61 61 Q 62702- A 1 20 —o1
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OT-143
marking jls
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TP0610T
Abstract: No abstract text available
Text: TP0610T inc. P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices Product marking for SOT-23: BVDSS / R d S ON I d (ON) b v dgs (m ax) (min) Order Num ber/Package SOT-23 T50* -60V 10£2 -50m A TP0610T where * = 2-w eek alpha date code
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TP0610T
OT-23
OT-23:
TP0610T
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Untitled
Abstract: No abstract text available
Text: Central" CMPD4150 Semiconductor Corp. SURFACE MOUNT HIGH CURRENT, HIGH SPEED SILICON SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD4150 type is an ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package,
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CMPD4150
OT-23
100i2,
CPD41
CMPD4150
OT-23
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VPT09050
Abstract: No abstract text available
Text: SIEMENS SPUX7N60S5 SPDX7N60S5 Target data sheet Cool MOS Power Transistor • N-Channel • Enhancement mode • Ultra low gate charge VPT09050 V P T 0905 1 • Avalanche rated • dv/dt rated • 150°C operating temperature Type SPUX7N60S5 ^bs 600 V 0.8 A
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SPUX7N60S5
SPDX7N60S5
VPT09050
X7N60S5
P-T0251-3-1
P-T0252
VPT09050
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03N60S5
Abstract: No abstract text available
Text: SIEMENS SPU03N60S5 SPD03N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity
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SPU03N60S5
SPD03N60S5
SPUx4N60S5/SPDx4N60S5
P-T0251
03N60S5
Q67040-S4227
P-T0252
03N60S5
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02N60S5
Abstract: SMD TRANSISTOR MARKING 02N SPD02N60S5
Text: SIEMENS SPU02N60S5 SPD02N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity
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SPU02N60S5
SPD02N60S5
SPUx5N60S5/SPDx5N60S5
SPU02N60S5
P-T0251
02N60S5
Q67040-S4226
P-T0252
02N60S5
SMD TRANSISTOR MARKING 02N
SPD02N60S5
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Untitled
Abstract: No abstract text available
Text: SIEMENS BSP 752 T Target data sheet Smart Power High-Side-Switch Features Product Summary • Overload protection Overvoltage protection H b AZ) 60 V • Current limitation Operating voltage H)b(on) co LO V • Short circuit protection On-state resistance
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LF MARKING CODE
Abstract: No abstract text available
Text: Central CMPD1001 CMPD1001A CMPD1001S TM Sem i c o n d u c t o r C o r p . HIGH CURRENT SW ITCHING DIODE DESCRIPTION: The CENTRAL S E M IC O N D U C T O R CMPD1001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications requiring
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CMPD1001
CMPD1001A
CMPD1001S
OT-23
CMPD1001S
100mA
200mA
LF MARKING CODE
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Untitled
Abstract: No abstract text available
Text: SIEMENS SPHX0N60S5 Target data sheet Cool MOS Power Transistor • Worldwide bestfibs on in TO 218 • N-Channel • Enhancement mode • Ultra low gate charge • Avalanche rated • dv/dt rated 1 2 3 • 150°C operating temperature G D S Type SPHX0N60S5
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SPHX0N60S5
X0N60S5
P-T0218-3-1
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Untitled
Abstract: No abstract text available
Text: SD107WS SCHOTTKY BARRIER SWITCHING DIODE Features Low Forward Voltage Drop Guard Ring Die Construction for Transient Protection Ideal for low logic level applications Low Capacitance -d -H SOD-323 U —= Mechanical Data_ A B G Case: SOD-323, Plastic
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SD107WS
OD-323
OD-323,
MIL-STD-202,
100mA
DS30129
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Untitled
Abstract: No abstract text available
Text: Central CLL4150 Sem icon du ctor Corp. HIGH SPEED SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CLL4150 type is an ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in a hermetically sealed glass surface mount package, designed for high speed
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CLL4150
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