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    SPDX7N60S5 Search Results

    SPDX7N60S5 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SPDX7N60S5 Infineon Technologies Cool MOS TM Power Transistor Original PDF

    SPDX7N60S5 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TRANSISTOR SMD MARKING CODE ag

    Abstract: MARKING CODE TBD P-TO251-3-1 ag TRANSISTOR SMD MARKING CODE DIODE smd marking Ag P-TO252 SPDX7N60S5 SPUX7N60S5
    Text: SPUX7N60S5 SPDX7N60S5 Target data sheet Cool MOS Power Transistor • N-Channel • Enhancement mode • Ultra low gate charge • Avalanche rated • dv/dt rated • 150°C operating temperature 1 2 3 G D S Type VDS ID RDS on Marking Package Ordering Code


    Original     		PDF SPUX7N60S5 SPDX7N60S5 X7N60S5 P-TO251-3-1 P-TO252 TRANSISTOR SMD MARKING CODE ag MARKING CODE TBD P-TO251-3-1 ag TRANSISTOR SMD MARKING CODE DIODE smd marking Ag P-TO252 SPDX7N60S5 SPUX7N60S5

    01N60S5

    Abstract: 01N60 SPD01N60S5 SPU01N60S5 P-TO251-3-1 P-TO252 Q67040-S4188 Q67040-S4193
    Text: SPU01N60S5 SPD01N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology • Ultra low gate charge Product Summary •=Periodic avalanche rated VDS @ Tjmax • Extreme dv/dt rated RDS on


    Original     		PDF SPU01N60S5 SPD01N60S5 P-TO252 P-TO251-3-1 SPUx7N60S5/SPDx7N60S5 Q67040-S4193 01N60S5 01N60S5 01N60 SPD01N60S5 SPU01N60S5 P-TO251-3-1 P-TO252 Q67040-S4188 Q67040-S4193

    01N60S5

    Abstract: SPD01N60S5 SPU01N60S5
    Text: SPU01N60S5 SPD01N60S5 Preliminary data Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation:


    Original     		PDF SPU01N60S5 SPD01N60S5 SPUx7N60S5/SPDx7N60S5 P-TO251-3-1 P-TO252 01N60S5 01N60S5 Q67040-S4193 SPD01N60S5

    01N60S5

    Abstract: 01n60 SPD01N60S5 SPU01N60S5
    Text: SPU01N60S5 SPD01N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge Product Summary • Periodic avalanche rated VDS @ Tjmax • Extreme dv/dt rated RDS on • Optimized capacitances ID P-TO252


    Original     		PDF SPU01N60S5 SPD01N60S5 SPUx7N60S5/SPDx7N60S5 P-TO252 P-TO251-3-1 P-TO251-3-1 Q67040-S4193 01N60S5 01n60 SPD01N60S5

    P-TO251-3-1

    Abstract: P-TO252 SPD01N50M2 SPU01N50M2 01N50M2 DIODE MARKING CODE 623
    Text: SPU01N50M2 SPD01N50M2 Target data sheet D,2 Cool MOS Power-Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated G,1 S,3 • Extreme dv/dt rated • Optimized capacitances COOLMOS • Improved noise immunity


    Original     		PDF SPU01N50M2 SPD01N50M2 SPUx7N60S5/SPDx7N60S5 SPU01N50M2 P-TO251-3-1 P-TO252 01N50M2 Q67040-S4324 P-TO251-3-1 P-TO252 SPD01N50M2 01N50M2 DIODE MARKING CODE 623

    SPD01N60S5

    Abstract: SPU01N60S5 01N60S5 P-TO251-3-1 P-TO252 Q67040-S4188 Q67040-S4193
    Text: SPU01N60S5 SPD01N60S5 Preliminary data D,2 Cool MOS Power-Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated G,1 S,3 • Extreme dv/dt rated • Optimized capacitances COOLMOS • Improved noise immunity


    Original     		PDF SPU01N60S5 SPD01N60S5 SPUx7N60S5/SPDx7N60S5 SPU01N60S5 P-TO251-3-1 P-TO252 01N60S5 Q67040-S4193 SPD01N60S5 01N60S5 P-TO251-3-1 P-TO252 Q67040-S4188 Q67040-S4193

    Q67040-S4326

    Abstract: SPN01N50M2 GPS05560 VPS05163 SPn01N50
    Text: SPN01N50M2 Target data sheet D,2/4 Cool MOS Small-Signal-Transistor 4 • New revolutionary high voltage technology • Ultra low gate charge • Extreme dv/dt rated 3 G,1 • Optimized capacitances 2 S,3 1 • Improved noise immunity VPS05163 COOLMOS • Former development designation:


    Original     		PDF SPN01N50M2 VPS05163 SPUx7N60S5/SPDx7N60S5 SPN01N50M2 OT-223 01N50M2 Q67040-S4326 Q67040-S4326 GPS05560 VPS05163 SPn01N50

    transistor marking smd 7c

    Abstract: TRANSISTOR SMD MARKING CODE ag VPT09050 X7N60S5
    Text: SIEMENS SPUX7N60S5 SPDX7N60S5 Target data sheet Cool MOS Power Transistor • N-Channel • Enhancement mode • Ultra low gate charge VPT09050 VPT09D51 • Avalanche rated • dWdf rated • 150°C operating temperature Type SPUX7N60S5 Vbs 600 V 1 2 3


    OCR Scan     		PDF SPUX7N60S5 SPDX7N60S5 VPT09D51 VPT09050 X7N60S5 P-T0251-3-1 P-T0252 transistor marking smd 7c TRANSISTOR SMD MARKING CODE ag VPT09050 X7N60S5

    VPT09050

    Abstract: No abstract text available
    Text: SIEMENS SPUX7N60S5 SPDX7N60S5 Target data sheet Cool MOS Power Transistor • N-Channel • Enhancement mode • Ultra low gate charge VPT09050 V P T 0905 1 • Avalanche rated • dv/dt rated • 150°C operating temperature Type SPUX7N60S5 ^bs 600 V 0.8 A


    OCR Scan     		PDF SPUX7N60S5 SPDX7N60S5 VPT09050 X7N60S5 P-T0251-3-1 P-T0252 VPT09050

    VPT09051

    Abstract: VPT09050 SPD01N50M2 SPU01N50M2 DIODE MARKING CODE 623
    Text: In fin eon SPU01N50M2 SPD01N50M2 Target data sheet technologies Cool MOS Power-Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/df rated • Optimized capacitances • Improved noise immunity


    OCR Scan     		PDF SPUx7N60S5/SPDx7N60S5 SPU01N50M2 SPD01N50M2 VPT09050 VPT09051 SPU01N50M2 P-T0251 01N50M2 Q67040-S4324 VPT09051 VPT09050 SPD01N50M2 DIODE MARKING CODE 623