80mw laser diode
Abstract: No abstract text available
Text: [ UTZ-SC0341_1 ] 2013/02/05 Emerald Green Laser Diode NDE4116E Engineering Sample Features Outline Dimension • Peak Wavelength: 505nm Unit mm ( + .03 6 5. 1. 6) Φ °C) • Optical Output Power: CW 80mW (@Tc=25° • Can Type: φ 5.6 mm Floating Mounted with Photo Diode and Zener Diode
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UTZ-SC0341
NDE4116E
505nm
80mw laser diode
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BAP51-02
Abstract: BP317
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP51-02 General purpose PIN diode Preliminary specification 1999 Jun 28 Philips Semiconductors Preliminary specification General purpose PIN diode BAP51-02 FEATURES PINNING • Low diode capacitance PIN • Low diode forward resistance.
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M3D319
BAP51-02
OD523
MAM405
OD523)
125004/00/02/pp6
BAP51-02
BP317
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109 DIODE
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP50-02 General purpose PIN diode Product specification 2001 Apr 17 Philips Semiconductors Product specification General purpose PIN diode BAP50-02 FEATURES PINNING • Low diode capacitance PIN • Low diode forward resistance.
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M3D319
BAP50-02
OD523
MAM405
OD523)
613512/01/pp8
109 DIODE
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80mw laser diode
Abstract: No abstract text available
Text: [ UTZ-SC0341_1 ] 2013/02/05 Emerald Green Laser Diode NDE4116E Engineering Sample Features Outline Dimension • Peak Wavelength: 505nm Unit mm ( + .03 6 5. 1. 6 ) Φ • Optical Output Power: CW 80mW (@Tc=25C) • Can Type: 5.6 mm Floating Mounted with Photo Diode and Zener Diode
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UTZ-SC0341
NDE4116E
505nm
80mw laser diode
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diode IN 5062
Abstract: in 5062 silicon rectifier diode
Text: 1N 5059.1N 5062 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter -2 Axial lead diode Standard silicon rectifier diodes 1N 5059.1N 5062 Forward Current: 2 A
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Diode 5059
Abstract: No abstract text available
Text: SM 5059 . SM 5063 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter /5 Surface mount diode Standard silicon rectifier diodes SM 5059.SM 5063 Forward Current: 2 A
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP63-02 Silicon PIN diode Preliminary specification 2001 Mar 20 Philips Semiconductors Preliminary specification Silicon PIN diode BAP63-02 PINNING FEATURES • High speed switching for RF signals PIN • Low diode capacitance
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M3D319
BAP63-02
BAP63-02
OD523
OD523)
MAM405
125004/04/pp7
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AN4506
Abstract: DS402ST DS402ST09 DS402ST10 DS402ST11 DS402ST12 DS402ST13 DS402ST14
Text: DS402ST DS402ST Rectifier Diode Replaces March 1998 version, DS4183-2.3 DS4183-3.0 January 2000 KEY PARAMETERS VRRM 1400V IF AV 505A IFSM 5600A APPLICATIONS • Rectification ■ Freewheel Diode ■ DC Motor Control ■ Power Supplies ■ Welding ■ Battery Chargers
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DS402ST
DS4183-2
DS4183-3
DS402ST14
DS402ST13
DS402ST12
DS402ST11
DS402ST10
DS402ST09
AN4506
DS402ST
DS402ST09
DS402ST10
DS402ST11
DS402ST12
DS402ST13
DS402ST14
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Untitled
Abstract: No abstract text available
Text: AUGUST 1995 DS402ST DS4183-2.2 DS402ST RECTIFIER DIODE APPLICATIONS KEY PARAMETERS 1400V VRRM 505A IF AV 5600A IFSM • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies. ■ Welding. ■ Battery Chargers. FEATURES ■ Double Side Cooling.
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DS402ST
DS4183-2
DS402ST14
DS402ST13
DS402ST12
DS402ST11
DS402ST10
DS402ST09
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marking code k1
Abstract: BAP51-02 smd marking KM
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP51-02 General purpose PIN diode Product specification Supersedes data of 1999 Jul 01 2000 Jul 06 Philips Semiconductors Product specification General purpose PIN diode BAP51-02 FEATURES PINNING • Low diode capacitance
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M3D319
BAP51-02
OD523
MAM405
OD523)
613514/02/pp8
marking code k1
BAP51-02
smd marking KM
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP63-02 Silicon PIN diode Preliminary specification 2001 Feb 20 Philips Semiconductors Preliminary specification Silicon PIN diode BAP63-02 PINNING FEATURES • High speed switching for RF signals PIN • Low diode capacitance
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M3D319
BAP63-02
BAP63-02
OD523
OD523)
MAM405
125004/04/pp7
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BAP51-03
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D049 BAP51-03 General purpose PIN diode Product specification Supersedes data of 1999 May 10 1999 Aug 16 Philips Semiconductors Product specification General purpose PIN diode BAP51-03 FEATURES PINNING • Low diode capacitance
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M3D049
BAP51-03
OD323
MAM406
OD323)
115002/03/pp8
BAP51-03
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Marking Code 72
Abstract: smd schottky diode marking 72 B 817 marking code 203 sot323 package
Text: DISCRETE SEMICONDUCTORS DATA SHEET lfpage M3D102 1PS70SB20 Schottky barrier diode Product specification 2001 Mar 16 Philips Semiconductors Product specification Schottky barrier diode 1PS70SB20 FEATURES DESCRIPTION • Ultra high switching speed Planar Schottky barrier diode with an integrated guard ring for stress protection
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M3D102
1PS70SB20
OT323
SC-70)
MAM394
613514/01/pp8
Marking Code 72
smd schottky diode marking 72
B 817
marking code 203 sot323 package
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BAS240
Abstract: BP317
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D154 BAS240 Schottky barrier diode Product specification 2001 Feb 05 Philips Semiconductors Product specification Schottky barrier diode BAS240 FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode with an integrated guard ring for stress protection.
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M3D154
BAS240
MAM214
OD110)
613514/01/pp8
BAS240
BP317
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Emcore solar cell
Abstract: ATJ photovoltaic cell solar cell "PHOTOVOLTAIC CELL" triple-junction "solar cell" diode cell EMCORE ATJ
Text: BTJM Photovoltaic Cell Triple-Junction with Monolothic Diode Solar Cell for Space Applications SPACE PHOTOVOLTAICS 28% Minimum Average Efficiency Features & Characteristics Highest efficiency flight cell with monolithic diode in the market Triple-Junction with Monolithic Diode BTJM InGaP/InGaAs/Ge Solar
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EWRP036
AS9100
Emcore solar cell
ATJ photovoltaic cell
solar cell
"PHOTOVOLTAIC CELL"
triple-junction "solar cell"
diode cell
EMCORE ATJ
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1583 Series
Abstract: 362d 766d
Text: LASER DIODE NX8571 Series 1 550 nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR DESCRIPTION The NX8571 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with wavelength
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NX8571
1583 Series
362d
766d
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BAS270
Abstract: BP317 BAS27
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D154 BAS270 Schottky barrier diode Product specification 2001 Feb 05 Philips Semiconductors Product specification Schottky barrier diode BAS270 FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode with an integrated guard ring for stress protection.
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M3D154
BAS270
MAM214
OD110)
613514/01/pp8
BAS270
BP317
BAS27
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Untitled
Abstract: No abstract text available
Text: DSA15I45PA preliminary Schottky Diode Gen ² VRRM = 45 V I FAV = 15 A VF = 0.63 V High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSA15I45PA Backside: cathode 3 1 Features / Advantages: Applications: Package: TO-220 ● Very low Vf
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DSA15I45PA
O-220
60747and
20131030a
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Untitled
Abstract: No abstract text available
Text: DSB20I15PA advanced Schottky Diode Gen ² VRRM = 15 V I FAV = 20 A VF = 0.39 V High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSB20I15PA Backside: cathode 3 1 Features / Advantages: Applications: Package: TO-220 ● Very low Vf
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DSB20I15PA
O-220
60747and
20130826a
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362d
Abstract: 601 Opto isolator 766d transistor NEC D 587 315D 346D 377D 409D
Text: DATA SHEET LASER DIODE NX8570 Series 1 550 nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR DESCRIPTION The NX8570 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with wavelength
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NX8570
362d
601 Opto isolator
766d
transistor NEC D 587
315D
346D
377D
409D
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ECONO2-6PACK IGBT module
Abstract: IR E78996 GB50XF120K IGBT 6PACK MODULE IRF E78996 E78996 IR GB50XF120K ECONO-2
Text: PD - 94567 GB50XF120K IGBT 6PACK MODULE Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF • 10µs Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft Diode Reverse Recovery Characteristics • Positive VCE (on) Temperature Coefficient
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GB50XF120K
ECONO2-6PACK IGBT module
IR E78996
GB50XF120K IGBT 6PACK MODULE
IRF E78996
E78996 IR
GB50XF120K
ECONO-2
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362d
Abstract: 315D 346D 377D NX8570SA b 803 a NX8570SD 933D 618D
Text: DATA SHEET LASER DIODE NX8570 Series 1 550 nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR DESCRIPTION The NX8570 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with wavelength
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NX8570
362d
315D
346D
377D
NX8570SA
b 803 a
NX8570SD
933D
618D
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Untitled
Abstract: No abstract text available
Text: @ M ITEL DS402ST Rectifier Diode SEMICONDUCTOR Supersedes August 1995 version, DS4183 - 2.2 DS4183 - 2.3 March 1998 KEY PARAMETERS v RRM 1400V 505A Jf AV 5600A FSM APPLICATIONS • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies.
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DS4183
DS402ST
DS402ST14
DS402ST13
DS402ST12
DS402ST11
DS402ST10
DS402ST09
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120C
Abstract: 175C TR402ST TR402ST09 TR402ST10 TR402ST11 TR402ST12 TR402ST13 TR402ST14
Text: TRANSYS TR402ST lUCTMIIICS L i m i t EU Rectifier Diode G KEY PARAMETERS VRRM 1400V 505A J AV 5600A FSM APPLICATIONS • Rectification ■ Freewheel Diode f ■ DC Motor Control ■ Power Supplies ■ Welding ■ Battery Chargers FEATURES ■ Double Side Cooling
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TR402ST
TR402ST14
TR402ST13
TR402ST12
TR402ST11
TR402ST10
TR402ST09
120C
175C
TR402ST
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