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    DIODE 4D Search Results

    DIODE 4D Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
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    DIODE 4D Price and Stock

    Hirschmann Electronics GmbH & Co Kg G 4 W 1 F 1N4004 DIODE ME

    Sensor Cables / Actuator Cables
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics G 4 W 1 F 1N4004 DIODE ME 3
    • 1 $9.63
    • 10 $8.67
    • 100 $7.75
    • 1000 $6.49
    • 10000 $6.49
    Buy Now

    Hirschmann Electronics GmbH & Co Kg GM 209 NJ W/1N4004 DIODE ME

    Sensor Cables / Actuator Cables
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics GM 209 NJ W/1N4004 DIODE ME
    • 1 $8.28
    • 10 $7.45
    • 100 $6.66
    • 1000 $4.93
    • 10000 $4.93
    Get Quote

    Hirschmann Electronics GmbH & Co Kg GDM 2009 J W/1N4004 DIODE ME

    Sensor Cables / Actuator Cables
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics GDM 2009 J W/1N4004 DIODE ME
    • 1 $8.45
    • 10 $7.65
    • 100 $6.69
    • 1000 $4.93
    • 10000 $4.93
    Get Quote

    DIODE 4D Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2013GB122-4DL

    Abstract: PX16
    Text: SKiiP 2013GB122-4DL I. Power section Absolute maximum ratings Symbol Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms


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    2013GB122-4DL 2013GB122-4DL PX16 PDF

    PX16

    Abstract: 2403GB122-4DL
    Text: SKiiP 2403GB122-4DL I. Power section Absolute maximum ratings Symbol Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms


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    2403GB122-4DL PX16 2403GB122-4DL PDF

    780 AC

    Abstract: semikron skiip 3 PX16
    Text: SKiiP 2013GB172-4DL I. Power section Absolute maximum ratings Symbol Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms


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    2013GB172-4DL 780 AC semikron skiip 3 PX16 PDF

    Untitled

    Abstract: No abstract text available
    Text: SKiiP 2003GB171-4DW I. Power section Absolute maximum ratings Symbol Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms


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    2003GB171-4DW PDF

    semikron skiip 400 gb

    Abstract: 780 AC semikron skiip capacitor MKP igbt skiip gb 120 PX16
    Text: SKiiP 2413GB123-4DL I. Power section Absolute maximum ratings Symbol Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms


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    2413GB123-4DL semikron skiip 400 gb 780 AC semikron skiip capacitor MKP igbt skiip gb 120 PX16 PDF

    semikron skiip

    Abstract: semikron skiip 400 gb 2013GB173-4DL SemiSel skiip gb 120 PX16 SKIIP 125
    Text: SKiiP 2013GB173-4DL I. Power section Absolute maximum ratings Symbol Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms


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    2013GB173-4DL semikron skiip semikron skiip 400 gb 2013GB173-4DL SemiSel skiip gb 120 PX16 SKIIP 125 PDF

    1613GB171-4DL

    Abstract: PX16
    Text: SKiiP 1613GB171-4DL I. Power section Absolute maximum ratings Symbol Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms


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    1613GB171-4DL 1613GB171-4DL PX16 PDF

    semikron skiip 400 gb

    Abstract: 2403GB173-4DW
    Text: SKiiP 2403GB173-4DW I. Power section Absolute maximum ratings Symbol Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms


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    2403GB173-4DW semikron skiip 400 gb 2403GB173-4DW PDF

    2403gb172-4dw

    Abstract: semikron skiip 2403GB172-4DW 780 AC
    Text: SKiiP 2403GB172-4DW I. Power section Absolute maximum ratings Symbol Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms


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    2403GB172-4DW 2403gb172-4dw semikron skiip 2403GB172-4DW 780 AC PDF

    skiip gb 120

    Abstract: No abstract text available
    Text: SKiiP 2013GB122-4DL I. Power section Absolute maximum ratings Symbol Conditions Values IGBT VCES 1 VCC Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM T j = 150 °C, tp = 10ms; sin 2 I t (Diode) Diode, T j = 150 °C, 10ms


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    2013GB122-4DL 2013GB122-4DL skiip gb 120 PDF

    2013GB172

    Abstract: skiip gb 120 2013GB172-4DL iec 60721-3-3
    Text: SKiiP 2013GB172-4DL I. Power section Absolute maximum ratings Symbol Conditions Values IGBT VCES 1 VCC Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM T j = 150 °C, tp = 10ms; sin 2 I t (Diode) Diode, T j = 150 °C, 10ms


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    2013GB172-4DL 2013GB172-4DL 2013GB172 skiip gb 120 iec 60721-3-3 PDF

    diode G21

    Abstract: marking G21 Z5 LD4RA BZX84-C27 BZX84C18 g21 Transistor BZX84C3V0 BZX84 BAV74 BAV99
    Text: SOT 23 DIODES SILICON PLANAR HIGH SPEED SWITCHING DIODES Ratings and Characteristics at 25°C ambient temperature Max. Type FM MD914 HD3A BAV70 BAV74 HD2A BAV99 BAW 56 HD4A * lF = 100m A D escription Single diode Single diode Dual diode w ith Dual diode w ith


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    FMMD914 BAV70 BAV74 BAV99 BAW56 100mA diode G21 marking G21 Z5 LD4RA BZX84-C27 BZX84C18 g21 Transistor BZX84C3V0 BZX84 PDF

    diode Lz 66

    Abstract: diode LZ. 58 BZX84C20 BZX84-C27 diode marking w8 BZX84-C5V1 BZX84C18 FMMD914 diode marking x6 BZX84-C15
    Text: SOT 23 DIODES SILICON PLANAR HIGH SPEED SWITCHING DIODES Ratings and Characteristics at 25°C am bient tem perature Max. Type FM MD914 HD3A BAV70 BAV74 HD 2A BAV99 BAW 56 HD 4A * lF = 100m A D escription Single diode Single diode Dual diode w ith Dual diode w ith


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    FMMD914 BAV70 BAV74 BAV99 BAW56 100mA BZX84 FMMD3102 BZX84-C3V0 BZX84-C3V3 diode Lz 66 diode LZ. 58 BZX84C20 BZX84-C27 diode marking w8 BZX84-C5V1 BZX84C18 diode marking x6 BZX84-C15 PDF

    BAS86

    Abstract: Philips Diode schottky mrc129
    Text: Philips Semiconductors Product specification Schottky barrier diode BAS86 FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode with an integrated protection ring against static discharges. This surface mounted diode is encapsulated in a hermetically sealed


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    BAS86 711Dfl2b BAS86 Philips Diode schottky mrc129 PDF

    2N3904 331 transistor

    Abstract: lm63
    Text: LM63 LM63 +/-1C/+/-3C Accurate Remote Diode Digital Temperature Sensor withIntegrated Fan Control Literature Number: SNAS190D LM63 ±1°C/±3°C Accurate Remote Diode Digital Temperature Sensor with Integrated Fan Control General Description • 10 bit plus sign remote diode temperature data format,


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    SNAS190D 2N3904, 2N3904 331 transistor lm63 PDF

    1842m

    Abstract: DIODE 4d LDD400-1P ldd200 2i125 LDD200-2P
    Text: LDD P Series Laser Diode Drivers Pb GENERAL DESCRIPTION: The LDD P Series of laser diode drivers come in three compact models to work with all laser diode / photodiode configurations. Each model is available in 200mA and 400mA versions to best fit your laser


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    200mA 400mA Aug-05 29-Sep-09 LDD200P-00400-A 1842m DIODE 4d LDD400-1P ldd200 2i125 LDD200-2P PDF

    LM63CIM-16

    Abstract: LM63 lm63c1 2N3904 LM63CIMA LM63DIMA
    Text: LM63 ±1°C/±3°C Accurate Remote Diode Digital Temperature Sensor with Integrated Fan Control General Description The LM63 is a remote diode temperature sensor with integrated fan control. The LM63 accurately measures: 1 its own temperature and (2) the temperature of a diode-connected


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    2N3904, LM63CIM-16 LM63 lm63c1 2N3904 LM63CIMA LM63DIMA PDF

    DIODE 4d

    Abstract: LDD200-1P ldd200 LDD400-1P LDDCAB-50 LDD200-2P DIODE 1N4001 LDD200P-00400 LDD400-3P DD200-1P
    Text: LDD P Series Laser Diode Drivers Pb GENERAL DESCRIPTION: The LDD P Series of laser diode drivers come in three compact models to work with all laser diode / photodiode configurations. Each model is available in 200mA and 400mA versions to best fit your laser


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    200mA 400mA Aug-05 29-Sep-09 LDD200P-00400-A DIODE 4d LDD200-1P ldd200 LDD400-1P LDDCAB-50 LDD200-2P DIODE 1N4001 LDD200P-00400 LDD400-3P DD200-1P PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET LASER DIODE NDL7605P Series 1 310 nm OPTICAL CATV RETURN PATH APPLICATIONS InGaAsP MQW DFB LASER DIODE MODULE WITH ISOLATOR DESCRIPTION The NDL7605P Series is a 1 310 nm uncooled isolated coaxial DFB laser diode. It is especially designed for optical CATV return path applications.


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    NDL7605P P14039EJ2V 11159E 11531E 10535E 13769X PDF

    USER-CONFIGURE

    Abstract: 2N3904 LM63 LM63CIMA LM63CIMAX LM63DIMA LM63DIMAX LM63EVAL 2N3904 331 transistor 2n3904 331
    Text: LM63 ±1°C/±3°C Accurate Remote Diode Digital Temperature Sensor with Integrated Fan Control General Description • 10 bit plus sign remote diode temperature data format, The LM63 is a remote diode temperature sensor with integrated fan control. The LM63 accurately measures: 1 its own


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    2N3904, USER-CONFIGURE 2N3904 LM63 LM63CIMA LM63CIMAX LM63DIMA LM63DIMAX LM63EVAL 2N3904 331 transistor 2n3904 331 PDF

    PIN Diode Basics

    Abstract: PIN DIODE DRIVER CIRCUITS 2n2222 transistor pin b c e 2N2894A 2N2222 application note 2n2222 transistor datasheet depletion mode current limiter LATTICE 3000 SERIES Microwave PIN diode Switching diode 0.5
    Text: APPLICATION NOTE PIN Diode Basics Introduction Basic Theory—Variable Resistance A PIN diode is essentially a variable resistor. To determine the value of this resistance, consider a volume comparable to a typical PIN diode chip, say 20 mil diameter and 2 mils thick. This chip has a


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: LM64 LM64 ±1°C Remote Diode Temperature Sensor with PWM Fan Control and 5 GPIO's Literature Number: SNAS207 LM64 ± 1˚C Remote Diode Temperature Sensor with PWM Fan Control and 5 GPIO’s General Description Key Specifications The LM64 is a remote diode temperature sensor with PWM


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    SNAS207 MMBT3904 TLM64 PDF

    Untitled

    Abstract: No abstract text available
    Text: 4DE D S BMRTTBfl 0D01i025 b E3SENI T '4 H FASCO INDS/ SENISYS CLED1 CLED1A CLED1B CLED1C Gallium Arsenide Infrared Emitting Diode GENERAL DESCRIPTION — The Clairex CLED1 is a Gallium Arsenide infrared emitting diode in a lensed hermetic TO-46 package. It emits an intense band of radia­


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    0D01i025 PDF

    DD400S65K1

    Abstract: No abstract text available
    Text: Technische Information / technical information DD400S65K1 IGBT-Module IGBT-modules Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values ! " # " $% & ' * $% & ()* $% & ( )* " * ! # 6 17 5&' " +, & " 9 .( . (/ + 12 3 4 12,+8 5 & '


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    DD400S65K1 DD400S65K1 PDF