IRF3805
Abstract: IRF3805LPBF AN-994 IRF530S IRF3805PBF
Text: PD - 97046A IRF3805PbF IRF3805SPbF IRF3805LPbF AUTOMOTIVE MOSFET Features l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D
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7046A
IRF3805PbF
IRF3805SPbF
IRF3805LPbF
O-220AB
AN-994.
O-220
IRF3805
IRF3805LPBF
AN-994
IRF530S
IRF3805PBF
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AN-994
Abstract: IRLZ44Z IRLZ44ZL IRLZ44ZS
Text: PD - 95539 IRLZ44ZPbF IRLZ44ZSPbF IRLZ44ZLPbF AUTOMOTIVE MOSFET Features l l l l l l l Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free HEXFET Power MOSFET
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IRLZ44ZPbF
IRLZ44ZSPbF
IRLZ44ZLPbF
O-220AB
AN-994.
AN-994
IRLZ44Z
IRLZ44ZL
IRLZ44ZS
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IRF3805LPBF
Abstract: IRF3805 IRF3805PBF
Text: PD - 97046B IRF3805PbF IRF3805SPbF IRF3805LPbF Features l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 55V RDS on = 3.3mΩ
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97046B
IRF3805PbF
IRF3805SPbF
IRF3805LPbF
AN-1140
com/technical-info/appnotes/an-1140
IRF3805LPBF
IRF3805
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Untitled
Abstract: No abstract text available
Text: PD - 97046 IRF3805PbF IRF3805SPbF IRF3805LPbF AUTOMOTIVE MOSFET Features l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D
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IRF3805PbF
IRF3805SPbF
IRF3805LPbF
AN-994.
O-220
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Untitled
Abstract: No abstract text available
Text: PD - 96988 IRF2903Z IRF2903ZS IRF2903ZL AUTOMOTIVE MOSFET HEXFET Power MOSFET Features l l l l l D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax VDSS = 30V RDS on = 2.4mΩ
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IRF2903Z
IRF2903ZS
IRF2903ZL
AN-994.
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IRF2903Z
Abstract: IRF2903ZL IRF2903ZS
Text: PD - 96988A IRF2903Z IRF2903ZS IRF2903ZL AUTOMOTIVE MOSFET HEXFET Power MOSFET Features l l l l l D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax VDSS = 30V RDS on = 2.4mΩ
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6988A
IRF2903Z
IRF2903ZS
IRF2903ZL
AN-994.
IRF2903Z
IRF2903ZL
IRF2903ZS
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IRF3805LPBF
Abstract: AN-1005 IRF3805 IRF3805PBF
Text: PD - 97046A IRF3805PbF IRF3805SPbF IRF3805LPbF AUTOMOTIVE MOSFET Features l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D
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7046A
IRF3805PbF
IRF3805SPbF
IRF3805LPbF
AN-994.
O-220
IRF3805LPBF
AN-1005
IRF3805
IRF3805PBF
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Untitled
Abstract: No abstract text available
Text: PD - 95539A IRLZ44ZPbF IRLZ44ZSPbF IRLZ44ZLPbF Features l l l l l l l Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free HEXFET Power MOSFET D VDSS = 55V
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5539A
IRLZ44ZPbF
IRLZ44ZSPbF
IRLZ44ZLPbF
AN-994.
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f 0472 N-Channel MOSFET
Abstract: hrf3205 mosfet HRF3205
Text: HRF3205, HRF3205S in te ik il J u n e 1999 Data S h e e t 100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a
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HRF3205,
HRF3205S
HRF3205S
f 0472 N-Channel MOSFET
hrf3205
mosfet HRF3205
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Untitled
Abstract: No abstract text available
Text: Temic DG428/429 Semiconductors Single 8-Ch/Differential 4-Ch L atchable Analog Multiplexers Features Benefits Applications • Low roS 0n : 55 Q • Low Charge Injection: 1 pC • On-Board TTL Compatible Address Latches • H ighspeed—tjR ans : 160 ns • Break-Before-Make
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DG428/429
DG428/DG429
S-56532--Rev.
19-Jan-98
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7698
Abstract: No abstract text available
Text: Tem ic DG428/429 S e m i c o n d u c t o r s Single 8-Ch/Differential 4-Ch Latchable Analog Multiplexers. Features Benefits • L o w rDS 0n : 55 Q • Im proved S ystem A ccuracy • • L ow C harge Injection: 1 pC • M icroprocessor B us C om patible •
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DG428/429
428/DG
E-76983--
30-Jun-97
7698
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schematic diagram welding inverter
Abstract: schematic diagram welding inverter control DG428 DG428AK DG428DJ DG428DN DG429
Text: S ilic o n ix DG428/429 A M e m b e r of th e TBM1C G ro u p Single 8-Channel/Differential 4-Channel Latchable Analog M ultiplexers Features Benefits Applications • Low iDs on : 55 Q • Low Charge Injection: 1 pC • On-Board TTL Compatible Address Latches
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DG428/429
DG428/DG429
DG428
DG428s
16-line
P-32167â
schematic diagram welding inverter
schematic diagram welding inverter control
DG428AK
DG428DJ
DG428DN
DG429
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diode 429 IK
Abstract: No abstract text available
Text: □ - □ 3 . V 'C X - Y Super Fast Recovery Diode Twin Diode mn?â Surface Mount OUTLINE DIMENSIONS DF20LC20U Unit • mm Package I STO-220 10 9 ± -9- 200V 20A >SMD m s 'i'x > trr35n s >SRSÜ > D C /D C ® > 7 5 ^ * -f-J b 2 @ (D >^BsOAw0,^ K H s . FA
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DF20LC20U
STO-220
trr35n
DF20LC20U
50HziE5K
J515-5
diode 429 IK
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X328 transistor
Abstract: scx6206 transistor x328 SCX6218 SCX6225 MEA 2901 x328 SCX6244 scx6232 SM8250A
Text: WjWM National /¡/m Semiconductor mUm Corporation Description of Gate Arrays and Standard Cells National Semiconductor’s CMOS Gate Arrays and Standard Cells utilize a dual layer metal technology microCMOS to achieve operating speeds similar to Schottky-TTL integrat
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128x8
SM8250A
SM8250B
250A/16450
8250-B/8250J-B
SM2901
SM2909
SM2911
0Q72122
X328 transistor
scx6206
transistor x328
SCX6218
SCX6225
MEA 2901
x328
SCX6244
scx6232
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2sk1461
Abstract: 34641
Text: 2SK1461 2056 U H U ltra h ig h V o lta g e S eries V OSs = 9 0 0 V N Channel P o w er M O S F E T F eatures •Low ON-state resistance. • Very high-speed switching. • Converters. A bsolute M axim um R atings at Ta = 25°C Drain to Source Voltage Vdss
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2SK1461
PWS10//S,
Vos-10V
2sk1461
34641
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150LA20A
Abstract: 250LA20A transistor b1068 480LA80A B1064 180kd07 mov 680kd14 471KD07 mov 200LA20A 230LA40A
Text: EDAL INDUSTRIES, INC. 51 COMMERCE STREET * EAST HAVEN, CONNECTICUT 06512 * TELEPHONE 203 -467-2591 * FAX (203)-469-5928 Internet: http://www.eemonline.com/edal Email: edalind@aol.com FEATURES APPLICATIONS A wide protecting voltage range. Low leakage current in Preparatory State.
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B106-13
150LA20A
250LA20A
transistor b1068
480LA80A
B1064
180kd07
mov 680kd14
471KD07 mov
200LA20A
230LA40A
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silizium-4-Quadranten-Fotodiode Silicon Four Quadrant Photodiode SFH 244 S Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. W esentliche M erkmale Features • • • • Speziell geeignet für Anwendungen im
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fl23Sb05
fl235b05
0DS7b47
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74hctls
Abstract: KS74HCT KS74HCTL kss4h
Text: SAMSUNG SEMICONDUCTOR INC 05 D E | 7 cit3m 145 O D O b S ñ b ñ | j ‘L - KS54HCTLS f ì Q KS74HCTLS u o Quad 2-Input A N D Gates -DESCRIPTION FEATURES • Function, pin-out, speed and drive compatibility with S4/74LS logic family • Low power consumption characteristic of CM OS
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KS54HCTLS
KS74HCTLS
S4/74LS
KS74HCTLS:
KS54HCTLS:
300-mil
7Tb414S
90-XO
14-Pin
74hctls
KS74HCT
KS74HCTL
kss4h
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RADIOTRON
Abstract: GE SCR 1000 AMP ST-12 1 watt diode 15 Amp current 1000 volts metal diode Scans-0017344
Text: RADIOTRON 1K6 D U O -D IO D E PENTODE Filament Voltage Current Maximum Overall Lengtft Maximum Diameter Bulb Cap Mounting Position Coated 2.0 0 .1 2 d-c volts amp. 4-15/16" 1-9/16" ST-18 Small Metal Any Base Pin 1-Filament ♦ Pin 2-Plate „ Pin 3-Diode Plate r S
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ST-12
RADIOTRON
GE SCR 1000 AMP
1 watt diode
15 Amp current 1000 volts metal diode
Scans-0017344
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GD74HC08 gate diagram
Abstract: No abstract text available
Text: GD54/74HC08, GD54/74HCT08 QUAD 2-INPUT AND GATES General Description These devices are identical in pinout to the 5 4 /7 4 L S 0 8 . They contain four independent 2-input AND gates. These devices are characterized for operation over wide temperature ranges to meet
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GD54/74HC08,
GD54/74HCT08
GD74HCT08
GD54HCT08
GD74HC08 gate diagram
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Untitled
Abstract: No abstract text available
Text: TC74LVX374F/FW/FS OCTAL D-TYPE FLIP FLOP WITH 3-STATE OUTPUT The TC74LVX374 is a high speed CMOS O CTAL D-FLIP FLOP fabricated with silicon gate C2MOS technology. Designed for use in 3.3 Volt systems, it achieves high speed operation w hile m aintaining the CMOS low power
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TC74LVX374F/FW/FS
TC74LVX374
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ic 74hc245
Abstract: 74hc245 PIN DIAGRAM 74HC245 HC245 h 54HC643 74HC245M HC245
Text: / T T SCS-THOMSON * 7 # u R{flDW[l[L[lOT liiflD i M54HC245/640/643 M74HC245/640/643 OCTAL BUS TRANSCEIVER 3-STATE HC245 NON INVERTING, HC640 INVERTING, HC643 INVERTING/NON INVERTING PRELIMINARY DATA • HIGH SPEED tpo = 11 ns (TYP.) at V c c = 5V ■ LOW POW ER DISSIPATION
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M54HC245/640/643
M74HC245/640/643
HC245
HC640
HC643
54/74LS245/640/643
54/74H
54HC643
HC640/643
ic 74hc245
74hc245 PIN DIAGRAM
74HC245
HC245 h
74HC245M
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T74LS266B1
Abstract: No abstract text available
Text: S G S-THOMSON Ü 7 E D I 7^2^237 QDlti2Lil 5 J LOW POWER SCHOTTKY INTEGRATED CIRCUITS Ai - 67C16390 T54LS266 T74LS266 Ì T -tz -tS D QUAD 2-INPUT EXCLUSIVE NOR GATE DESCRIPTION The T54LS266/T74LS266 Is a high speed QUAD
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T54LS266
T74LS266
T54LS266/T74LS266
67C16390
T74LS266
T74LS266B1
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23G102k
Abstract: 15G121K 15g102k tnr g 180k 12G102K tnr 15g 471k varistor 152k
Text: METAL OXIDE VARISTORS TN R Marcon TNR Metal Oxide Varistors are voltage dependent, symmetrical resistors which perform in a manner similar to back-to-back zener diodes in circuit protective functions and offer advantages in performance and economics. When ex
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