transistor l7805cv
Abstract: in4148 smd diode l7805cv transistor ots-16-03 8B TRANSISTOR SMD smd transistor A1 smd diode code A2 SMD BERG header 805 smd code capacitor datasheet L7805CV
Text: Date: 4-May-07 PCB reference: STEVAL-IFS003V1 Date: March, 20 2006 Company: S Contact person: Nishant Omar E-mail: nishant.omar@st.com Phone:+91 0120 4003603 Reference 1 ST7 - MCU 1 NAND-Flash 1 Voltage Regulator 1 Real Time Clock 1 MOSFET 1 Diode 1 npn Transistor
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Original
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4-May-07
STEVAL-IFS003V1
ST7F651AR6T1
NAND512W3A
L7805
M41T81S
STB100NF
IN4148
2STR1215
TQFP64
transistor l7805cv
in4148 smd diode
l7805cv transistor
ots-16-03
8B TRANSISTOR SMD
smd transistor A1
smd diode code A2
SMD BERG header
805 smd code capacitor
datasheet L7805CV
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PDF
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DIODE 1N4004G
Abstract: 1N4005G 1N4006G 1N4001G 1N4007G 4002G 4005G 4006G 1N4007G-TB diode 1N4007G
Text: 1N4001G – 1N4007G WTE POWER SEMICONDUCTORS Pb 1.0A GLASS PASSIVATED STANDARD DIODE Features ! Glass Passivated Die Construction ! ! ! ! Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data
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Original
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1N4001G
1N4007G
DO-41,
MIL-STD-202,
DO-41
DIODE 1N4004G
1N4005G
1N4006G
1N4001G
1N4007G
4002G
4005G
4006G
1N4007G-TB
diode 1N4007G
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PDF
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UF4006G-TB
Abstract: UF4007G 4002G 4005G 4006G UF4001G uf4006g
Text: UF4001G – UF4007G WTE POWER SEMICONDUCTORS Pb 1.0A GLASS PASSIVATED ULTRAFAST DIODE Features ! Glass Passivated Die Construction ! ! ! ! Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data
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Original
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UF4001G
UF4007G
DO-41,
MIL-STD-202,
DO-41
UF4006G-TB
UF4007G
4002G
4005G
4006G
UF4001G
uf4006g
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PDF
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uf4007 diode
Abstract: diode UF-4007 STD DIODE UF4007 NI 4001 UF4003 diode UF4007 UF400X RS-296-E UF4001-T3 UF4003
Text: UF4001 – UF4007 WTE POWER SEMICONDUCTORS Pb 1.0A ULTRAFAST DIODE Features ! Diffused Junction ! ! ! ! Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data ! ! ! ! ! ! ! C Case: DO-41, Molded Plastic
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Original
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UF4001
UF4007
DO-41,
MIL-STD-202,
DO-41
uf4007 diode
diode UF-4007
STD DIODE UF4007
NI 4001
UF4003 diode
UF4007
UF400X
RS-296-E
UF4001-T3
UF4003
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PDF
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diode 1N4001 specifications
Abstract: No abstract text available
Text: 1N4001 – 1N4007 WTE POWER SEMICONDUCTORS Pb 1.0A STANDARD DIODE Features ! Diffused Junction ! ! ! ! Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data ! ! ! ! ! ! ! C Case: DO-41, Molded Plastic
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Original
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1N4001
1N4007
DO-41,
MIL-STD-202,
DO-41
diode 1N4001 specifications
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PDF
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Untitled
Abstract: No abstract text available
Text: 1N4001G – 1N4007G 1.0A GLASS PASSIVATED STANDARD DIODE WON-TOP ELECTRONICS Pb Features Glass Passivated Die Construction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability B A A Mechanical Data
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Original
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1N4001G
1N4007G
DO-41,
MIL-STD-202,
DO-41
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PDF
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uf4006g
Abstract: No abstract text available
Text: UF4001G – UF4007G WTE POWER SEMICONDUCTORS Pb 1.0A GLASS PASSIVATED ULTRAFAST DIODE Features Glass Passivated Die Construction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data C Case: DO-41, Molded Plastic
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Original
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UF4001G
UF4007G
DO-41,
MIL-STD-202,
DO-41
uf4006g
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PDF
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Untitled
Abstract: No abstract text available
Text: KT1400 Series 4PIN LSOP PHOTODARLINGTON PHOTOCOUPLER cosmo Description series consist of a photodarlington optically coupled to a gallium 4 KT1400 1 The Schematic arsenide infrared-emitting diode in a 4 pin LSOP 3 2 wide body package. Collector-emitter voltage is
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KT1400
KT1400
5000Vrms
69P20002
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PDF
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AD8017
Abstract: No abstract text available
Text: FEATURES FUNCTIONAL BLOCK DIAGRAM Schottky diode detector with linearization Broadband 50 Ω input impedance Accurate response from 0.5 GHz to 43.5 GHz with minimal slope variation Input range of −30 dBm to +15 dBm, referred to 50 Ω Excellent temperature stability
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ADL6010
7-31-2013-A
ADL6010ACPZN-R7
ADL6010SCPZN-R7
ADL6010-EVALZ
D11617-0-9/14
AD8017
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PDF
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Untitled
Abstract: No abstract text available
Text: 1N4001G – 1N4007G WTE POWER SEMICONDUCTORS Pb 1.0A GLASS PASSIVATED STANDARD DIODE Features Glass Passivated Die Construction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data
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Original
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1N4001G
1N4007G
DO-41,
MIL-STD-202,
DO-41
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PDF
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Untitled
Abstract: No abstract text available
Text: UF4001G – UF4007G 1.0A GLASS PASSIVATED ULTRAFAST DIODE WON-TOP ELECTRONICS Pb Features Glass Passivated Die Construction Low Forward Voltage Drop High Surge Current Capability High Reliability Ideally Suited for Use in High Frequency
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Original
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UF4001G
UF4007G
DO-41,
MIL-STD-202,
DO-41
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PDF
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UF4001G
Abstract: UF4007G 4002G 4005G 4006G
Text: UF4001G – UF4007G WTE POWER SEMICONDUCTORS Pb 1.0A GLASS PASSIVATED ULTRAFAST DIODE Features Glass Passivated Die Construction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data C Case: DO-41, Molded Plastic
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Original
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UF4001G
UF4007G
DO-41,
MIL-STD-202,
DO-41
UF4001G
UF4007G
4002G
4005G
4006G
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PDF
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AD8017
Abstract: No abstract text available
Text: FEATURES FUNCTIONAL BLOCK DIAGRAM Schottky diode detector with linearization Broadband 50 Ω input impedance Accurate response from 0.5 GHz to 43.5 GHz with minimal slope variation Input range of −30 dBm to +15 dBm, referred to 50 Ω Excellent temperature stability
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Original
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ADL6010
7-31-2013-A
ADL6010ACPZN-R7
ADL6010SCPZN-R7
ADL6010-EVALZ
D11617-0-7/14
AD8017
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PDF
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Untitled
Abstract: No abstract text available
Text: SDN137 Digital High Speed Optocoupler 10MBd, Logic Output Description Features • The SDN137 consists of a high efficient AlGaAs Light Emitting Diode and a high speed optical detector. This design provides excellent AC and DC isolation between the
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Original
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SDN137
10MBd,
SDN137
10MBd
15kV/ï
5000VRMS)
SDN137/H/S/TR
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PDF
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Untitled
Abstract: No abstract text available
Text: SDN139 Analog High Speed Optocoupler 100KBd, Photodiode with Darlington Output Description Features • The SDN139 consists of a highly efficient AlGaAs Light Emitting Diode and an integrated high gain photo detector to provide extremely high current
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Original
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SDN139
100KBd,
SDN139
SDN139/H/S/TR
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PDF
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Untitled
Abstract: No abstract text available
Text: . AL LE GR O K r.i' • • MICROSYSTEMS INC 13 D ■ 0SDM33fl D 0 0 3 7 Ô S Ô T -9 1 -0 1 PROCESS TRJ Process TRJ Silicon Rectifier Diode This silicon epitaxial diode is a 200V, 1.0A rectifier designed to m eet 1N4001, 1N 4002, and 1N 4003 specifications.
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OCR Scan
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0SDM33fl
1N4001,
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PDF
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IN4003
Abstract: 1N4003A 175t2
Text: 7020^^^ GDOTGlb T03 iRHn Page ROHrn Speculation Products ] 01 Type Glass Sealed Rectifying Diode IN4003A Glass Sealed Rectifying Diode 1. PRODUCTS Silicon diffused junction 1N4003A 2. TYPE 3. APPLICATION General rectification 'Glass seal 4. FEATURES 'Snail size
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OCR Scan
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1N4003A
1N4003A
D0-41)
175t2
-65-175t
IN4003
175t2
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PDF
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germanium
Abstract: kia 7208 KIA 7313 germanium transistor speaker protector
Text: KOREA ELECTRONICS CO , LTD. KP—8111 PRODU CT GUIDE TRANSISTOR INTEGRATED CIRCUIT LIGHT-EMITTING DIODE DIODE KEC SEMICONDUCTOR MAXIMUM RATINGS v CEO USE lC Pc ELECTRICAL CHARACTERISTICS Ta = 25°C hFE TYPE (V) (mA) (mW) Vce (sat) MAX VCE lC (V) (mA) KTC I815/KTN 5014
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OCR Scan
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I815/KTN
10I5/KTP
1923/KTN
380TM/KTN
germanium
kia 7208
KIA 7313
germanium transistor
speaker protector
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PDF
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K 4005 transistor
Abstract: "Photo Interrupter" PS4001 ir 4009 pa 4009 transistor 4003 K 4005 ps4009
Text: NEC PHOTO INTERRUPTERS ELECTRON DEVICE p s 400 i , p s 4003, p s 4005,p s 4007, p s 4009 PHOTO INTERRUPTER NEPOC SERIES DESCRIPTION The PS4001, PS4003, PS4005, PS4007, PS4009 are photo coupled interrupter modules containing a GaAs light emitting diode and an NPN silicon darlington connected photo-transistor.
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OCR Scan
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PS4001,
PS4003,
PS4005,
PS4007,
PS4009
CHARACTERIS492
K 4005 transistor
"Photo Interrupter" PS4001
ir 4009
pa 4009
transistor 4003
K 4005
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PDF
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ZPD 5.1 ITT
Abstract: ZPD ITT diode zener ZD 88 germanium BYY32 germanium transistor CJ 4148 ZENER BAW21 ITT ZPD 11 itt germanium diode
Text: General Information Germanium Gold Bonded Diodes Silicon Diodes Silicon Capacitance Diodes Silicon Diode Switches PIN Diodes Silicon Zener Diodes and Temperature Compensated Stabilizing Circuits Silicon Stabilizer Diodes Light Emitting Diodes Silicon Rectifiers
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OCR Scan
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F-92223
D-7800
ZPD 5.1 ITT
ZPD ITT
diode zener ZD 88
germanium
BYY32
germanium transistor
CJ 4148 ZENER
BAW21
ITT ZPD 11
itt germanium diode
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PDF
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Diode IN 5404
Abstract: diode in 5401 IN 4004 diodes DIODE IN 4002 4002 diode DIODE 4004 diode IN 4004 5401 diode diode N 4007 KDA 1.2
Text: HERRMANN T ^ O I-1 5 KG 4SE J> m 443bS7S 0000123 3 • HRfIN Drahtdioden Lead mounted diodes Diodes à fils Diodentyp V T ype o f d io d e rrm V BR If a v Type de diode 4001 4002 4003 4004 4005 4006 4007 1N 5400 5401 5402 5403 5404 5405 5406 5407 5408 R 250-A
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OCR Scan
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3b57S
Diode IN 5404
diode in 5401
IN 4004 diodes
DIODE IN 4002
4002 diode
DIODE 4004
diode IN 4004
5401 diode
diode N 4007
KDA 1.2
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PDF
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high frequency high power transistor 300mhz bjt n
Abstract: RC30 resistor schematic diagram JL 500 1 ECU-V1H104KBW RF2312 RF2312PCBA 1008CS-331XKBC ecuv1h221jcg vd56 DIODE T25-4-B4
Text: R FI RF2312 MICRO-DEVICES LINEAR GENERAL PURPOSE AMPLIFIER • CATV Distribution Amplifiers • Laser Diode Driver • Gable Modems • Return Channel Amplifier • Broadband Gain Blocks • Base Stations LINEAR CATV AMPLIFIERS Typical Applications Product Description
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OCR Scan
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RF2312
RF2312
1000MHz,
Rc-30,
T00M131
high frequency high power transistor 300mhz bjt n
RC30 resistor
schematic diagram JL 500 1
ECU-V1H104KBW
RF2312PCBA
1008CS-331XKBC
ecuv1h221jcg
vd56
DIODE T25-4-B4
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PDF
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Untitled
Abstract: No abstract text available
Text: RF2312 R F MICRO-DEVICES LINEAR GENERAL PURPOSE AMPLIFIER • CATV Distribution Amplifiers • Laser Diode Driver • Cable Modems • Return Channel Amplifier • Broadband Gain Blocks • Base Stations LINEAR CATV AMPLIFIERS Typical Applications Product Description
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OCR Scan
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RF2312
RF2312
1000MHz,
RDDM131
T00413
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PDF
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Untitled
Abstract: No abstract text available
Text: $ 1 N4003A K /D io d e s -4 1N 4003A - > =i < * - k w ? t. -t -/ Silicon Diffused Junction Rectifying Diode Glass Sealed Type) • 1) ¿1^7 2) tw it\D £ 0 /D im e n s io n s (Unit : mm) 5o '¡'•WT&Zo 3) S i it f 4) 7 R S t iT '£ > 5 „ • Features
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OCR Scan
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N4003A
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PDF
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