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    DIODE 4 MARKING Search Results

    DIODE 4 MARKING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE 4 MARKING Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    chip Marking 3A3

    Abstract: Diode BGX50A BGX50A VPS05178
    Text: BGX50A Silicon Switching Diode Array 3  Bridge configuration  High-speed switching diode chip 4 2 1 2 3 VPS05178 1 4 EHA00007 Type BGX50A Marking U1s Pin Configuration 1=C1/C2 2=A1/C4 3=A3/A4 4=A2/C3 Package SOT143 Maximum Ratings Parameter Symbol Diode reverse voltage


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    PDF BGX50A VPS05178 EHA00007 OT143 EHB00147 EHB00148 Jul-31-2001 EHB00149 chip Marking 3A3 Diode BGX50A BGX50A VPS05178

    marking SA

    Abstract: No abstract text available
    Text: Ordering number : ENN7029 SBS806M Schottky Barrier Diode SBS806M 30V, 0.5A Rectifier Applications Package Dimensions unit : mm 1310 • 2.1 3 2 1 0.65 5 2.0 4 1 : Anode Diode 1 2 : No Contact 3 : Anode (Diode 2) 4 : Cathode (Diode 2) 5 : Cathode (Diode 1)


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    PDF ENN7029 SBS806M SBS806M SBS006. SBS806M] marking SA

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENN7029 SBS806M Schottky Barrier Diode SBS806M 30V, 0.5A Rectifier Applications Package Dimensions unit : mm 1310 • 2.1 3 2 1 0.65 5 2.0 4 1 : Anode Diode 1 2 : No Contact 3 : Anode (Diode 2) 4 : Cathode (Diode 2) 5 : Cathode (Diode 1)


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    PDF ENN7029 SBS806M SBS806M] SBS806M SBS006.

    VPS05178

    Abstract: EHA07008
    Text: BAR 65-07 Silicon RF Switching Diode 3  Low loss, low capacitance PIN-diode  Band switch for TV-tuners 4  Series diode for mobile communication transmit-receiver switch 2  Unconnected pair 1 VPS05178 4 1 3 2 EHA07008 Type Marking BAR 65-07 M Pin Configuration


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    PDF VPS05178 EHA07008 OT-143 Oct-05-1999 100MHz VPS05178 EHA07008

    A1 SOT143

    Abstract: VPS05178 BAW101 EHA07008
    Text: BAW101 Silicon Switching Diode Array 3  Electrically insulated high-voltage medium-speed diodes 4 2 1 VPS05178 4 1 3 2 EHA07008 Type Marking BAW101 JPs Pin Configuration 1 = C1 2 = C2 3 = A2 Package 4 = A1 SOT143 Maximum Ratings Parameter Symbol Diode reverse voltage


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    PDF BAW101 VPS05178 EHA07008 OT143 EHN00019 Aug-20-2001 EHB00104 EHB00103 A1 SOT143 VPS05178 BAW101 EHA07008

    SOT JPs

    Abstract: VPS05178 EHA07008
    Text: BAW 101 Silicon Switching Diode Array 3 • Electrically insulated high-voltage medium-speed diodes 4 2 1 VPS05178 4 1 3 2 EHA07008 Type Marking BAW 101 JPs Pin Configuration 1 = C1 2 = C2 3 = A2 Package 4 = A1 SOT-143 Maximum Ratings Parameter Symbol Diode reverse voltage


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    PDF VPS05178 EHA07008 OT-143 EHN00019 100ns, Oct-08-1999 EHB00102 EHB00104 EHB00103 SOT JPs VPS05178 EHA07008

    VPS05178

    Abstract: marking a4 SOT-143 a3 sot143 marking s8s 4C3 diode
    Text: BAT 14-099R Silicon Crossover Ring Quad Schottky Diode 3 • Medium barrier diode for double balanced mixer, phase detectors and modulators 4 2 1 4 VPS05178 3 1 2 EHA07012 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


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    PDF 14-099R VPS05178 EHA07012 OT-143 EHD07089 EHD07090 Oct-07-1999 VPS05178 marking a4 SOT-143 a3 sot143 marking s8s 4C3 diode

    A4 marking diode

    Abstract: VPS05178 sot-143 s6s diode marking a4 4C3 diode 15-099R
    Text: BAT 15-099R Silicon Crossover Ring Quad Schottky Diode 3 • Low barrier diode for double balance mixers, phase detectors and modulators 4 2 4 1 3 1 VPS05178 2 EHA07012 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


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    PDF 15-099R VPS05178 EHA07012 OT-143 EHD07077 EHD07078 Oct-07-1999 A4 marking diode VPS05178 sot-143 s6s diode marking a4 4C3 diode 15-099R

    diode marking 343

    Abstract: sot-343 schottky diode
    Text: Central CMWSH-4 TM Semiconductor Corp. SURFACE MOUNT SCHOTTKY DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMWSH-4, 40V, Low VF, Dual, Galvanically isolated Silicon Schottky diode , is designed for use in high speed surface mount switching applications. Marking Code is WSH4.


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    PDF OT-343 100mA 27-August diode marking 343 sot-343 schottky diode

    1S2473 DIODE equivalent

    Abstract: 1S2473 equivalent diode cross reference 1s2473 DIODE marking S4 59A marking 62N SOT23 1S2471 equivalent UHF/VHF TV Tuner HITACHI DIODE 1N4148 LL-34 DIODE ZENNER C25 1N52xx
    Text: Status List HITACHI DIODE Vol.16-4 2002.11 Topic - Miniature Flat Lead Package Diode “HSN278WK” .2 Variable Capacitance Diodes for Electronic Tuning .4, 5


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    PDF HSN278WK" HZC10 HZC11 HZC12 HZC13 HZC15 HZC16 HZC18 HZC20 HZC22 1S2473 DIODE equivalent 1S2473 equivalent diode cross reference 1s2473 DIODE marking S4 59A marking 62N SOT23 1S2471 equivalent UHF/VHF TV Tuner HITACHI DIODE 1N4148 LL-34 DIODE ZENNER C25 1N52xx

    marking u1s SOT-143

    Abstract: VPS05178 chip Marking 3A3
    Text: BGX 50A Silicon Switching Diode Array 3 • Bridge configuration • High-speed switching diode chip 4 2 1 2 3 VPS05178 1 4 EHA00007 Type Marking BGX 50A U1s Pin Configuration 1=C1/C2 2=A1/C4 3=A3/A4 Package 4=A2/C3 SOT-143 Maximum Ratings Parameter Symbol


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    PDF VPS05178 EHA00007 OT-143 EHB00147 EHB00148 Oct-26-1999 EHB00149 marking u1s SOT-143 VPS05178 chip Marking 3A3

    BAS40-07W

    Abstract: No abstract text available
    Text: BAS40-07W 3 Silicon Schottky Diode 4  General-purpose diode for high-speed switching  Circuit protection  Voltage clamping 2  High-level detection and mixing 4 1 3 2 1 VPS05605 EHA07008 Type BAS40-07W Marking Pin Configuration 47s 1=C1 2=C2 3=A2 4=A1 -


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    PDF BAS40-07W VPS05605 EHA07008 OT343 EHB00039 Aug-23-2001 EHB00038 BAS40-07W

    BAR80

    Abstract: VSO05553
    Text: BAR80 Silicon RF Switching Diode 3  Design for use in shunt configuration 4  High shunt signal isolation  Low shunt insertion loss 2 1 VSO05553 Type Marking BAR80 AAs Pin Configuration 1=C 2=A 3=C Package 4=A MW-4 Maximum Ratings Parameter Symbol Diode reverse voltage


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    PDF BAR80 VSO05553 Aug-17-2001 100MHz EHD07010 EHD07009 BAR80 VSO05553

    Untitled

    Abstract: No abstract text available
    Text: DSS6-0025BS preliminary Schottky Diode VRRM = 25 V I FAV = 6A VF = 0.3 V High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSS6-0025BS Marking on Product: 6Y025AS Backside: cathode 1 3 4 Features / Advantages: Applications:


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    PDF DSS6-0025BS 6Y025AS O-252 60747and 20131031b

    Untitled

    Abstract: No abstract text available
    Text: DSA15IM200UC preliminary Schottky Diode Gen ² VRRM = 200 V I FAV = 15 A VF = 0.78 V High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSA15IM200UC Marking on Product: SFMAUI Backside: cathode 1 3 4 Features / Advantages:


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    PDF DSA15IM200UC O-252 60747and 20131031b

    4C3 diode

    Abstract: Schottky Diode Marking C3 A4 marking diode VPS05178 BAT15-099R diode marking a4 diode MARKING A3
    Text: BAT15-099R Silicon Crossover Ring Quad Schottky Diode 3  Low barrier diode for double balance mixers, phase detectors and modulators 4 2 4 1 3 1 VPS05178 2 EHA07012 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BAT15-099R


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    PDF BAT15-099R VPS05178 EHA07012 OT143 EHD07077 15-099R Jul-31-2001 4C3 diode Schottky Diode Marking C3 A4 marking diode VPS05178 BAT15-099R diode marking a4 diode MARKING A3

    sot143 marking code u1s

    Abstract: BFP181 BGX50A E6327
    Text: BGX50A. Silicon Switching Diode Array  Bridge configuration  High-speed switching diode chip BGX50A 4 3 D 3 D 4 D 2 D 1 1 2 Type BGX50A Package SOT143 Configuration bridge Marking U1s Maximum Ratings at TA = 25°C, unless otherwise specified Parameter


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    PDF BGX50A. BGX50A OT143 sot143 marking code u1s BFP181 BGX50A E6327

    Untitled

    Abstract: No abstract text available
    Text: BGX50A. Silicon Switching Diode Array  Bridge configuration  High-speed switching diode chip BGX50A 4 3 D 3 D 4 D 2 D 1 1 2 Type BGX50A Package SOT143 Configuration bridge Marking U1s Maximum Ratings at TA = 25°C, unless otherwise specified Parameter


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    PDF BGX50A. BGX50A OT143 Feb-03-2003

    BAT62

    Abstract: VPS05178
    Text: BAT62 Silicon Schottky Diode 3  Low barrier diode for detectors up to GHz frequencies 4 2 1 VPS05178 1 4 2 3 EHA07020 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BAT62 62s Pin Configuration 1 = A1 2 = C2 3 = A2


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    PDF BAT62 VPS05178 EHA07020 OT143 Aug-23-2001 EHD07061 EHD07062 900MHz BAT62 VPS05178

    BAT63-07W

    Abstract: No abstract text available
    Text: BAT63-07W Silicon Schottky Diode 3  Low barrier diode for detectors up to GHz 4 frequencies  For high-speed switching applications  Zero bias detector diode 2 1 4 1 3 2 VPS05605 EHA07008 ESD: Electrostatic discharge sensitive device, observe handling precaution!


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    PDF BAT63-07W VPS05605 EHA07008 OT343 Jul-06-2001 BAT63-07W

    SRV05-4

    Abstract: 076a
    Text: UNISONIC TECHNOLOGIES CO., LTD SRV05-4 Preliminary DIODE LOW CAPACITANCE TVS DIODE ARRAY „ DESCRIPTION The UTC SRV05-4 is a low capacitance TVS diode array, it uses UTC’s advanced technology to provide customers with low leakage current and low clamping voltage, etc.


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    PDF SRV05-4 SRV05-4 SRV05-4L-AG6-R SRV05-4G-AG6-R SRV05-4L-AG6-R OT-26 QW-R601-076 076a

    6Y150AS

    Abstract: 6Y150AS IXYS
    Text: DSS6-015AS Schottky Diode VRRM = 150 V I FAV = 6A VF = 0.62 V High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSS6-015AS Marking on Product: 6Y150AS Backside: cathode 1 3 4 Features / Advantages: Applications: Package: TO-252 DPak


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    PDF DSS6-015AS 6Y150AS O-252 60747and 20131031b 6Y150AS 6Y150AS IXYS

    diode oar

    Abstract: BAT54
    Text: CD1L BAT54 SCHOTTKY BARRIER DIODE BAT54 single diode Marking PACKAGE OUTLINE DETAILS ALL DIM ENSIONS IN m m B A T 5 4 -4 L _3.0_ 2.8 1 = ANODE 2 = NC 3 = CATHODE 0 .1 4 0 .4 3 0 .3 8 Pin configuration 3 2.6 2 .4 _1.02 o.8<r 0.6 0 2.00 040" 1.80 ABSOLUTE MAXIMUM RATINGS


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    PDF BAT54 BAT54 diode oar

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS Silicon Switching Diode Array BGX 50 A • Bridge configuration • High-speed switch diode chip Type Marking Ordering Code tape and reel BGX 50 A U1s Q62702-G38 Pin Configuration Package1) SOT-143 4 OU00007 Maximum Ratings per Diode Parameter Symbol


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    PDF Q62702-G38 OT-143 OU00007 fl235bD5 fi235bD5 0235bD5 Q122235