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    DIODE 3A SMA Search Results

    DIODE 3A SMA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE 3A SMA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    D1003

    Abstract: SBM30-03
    Text: SBM30-03 Ordering number : ENN6967B SBM30-03 Schottky Barrier Diode 30V, 3A Rectifier Features • • • Supports automatic mounting and permits SBM30-03 applied sets to be made smaller. Low forward voltage VF max=0.4V . Average rectified current : IO=3A.


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    PDF SBM30-03 ENN6967B SBM30-03 D1003

    SBM30-03

    Abstract: No abstract text available
    Text: Ordering number : ENN6967A SBM30-03 Schottky Barrier Diode SBM30-03 30V, 3A Rectifier Features • Supports automatic mounting and permits SBM30-03 applied sets to be made smaller. Low forward voltage VF max=0.4V . Average rectified current : IO=3A. unit : mm


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    PDF ENN6967A SBM30-03 SBM30-03] SBM30-03

    XBS303V17R-G

    Abstract: XBS303V17R XBS30
    Text: XBS303V17R-G ETR1614-001a Schottky Barrier Diode, 3A, 30V Type •FEATURES ■APPLICATIONS Forward Voltage : VF=0.355V TYP. ●Rectification Forward Current : IF(AVE)=3A ●Protection against reverse connection of battery Repetitive Peak Reverse Voltage


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    PDF XBS303V17R-G ETR1614-001a XBS303V17R-G XBS303V17R XBS30

    TOREX MARKING RULE

    Abstract: No abstract text available
    Text: XBS304S19R-G ETR16023-001 Schottky Barrier Diode, 3A, 40V Type •FEATURES ■APPLICATIONS Forward Voltage : VF=0.465V TYP. ●Rectification Forward Current : IF(AVE)=3A ●Protection against reverse connection of battery Repetitive Peak Reverse Voltage


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    PDF XBS304S19R-G ETR16023-001 304S19 TOREX MARKING RULE

    XBS304S17R-G

    Abstract: ETR1615-002a XBS30 304S17
    Text: XBS304S17R-G ETR1615-002a Schottky Barrier Diode, 3A, 40V Type •FEATURES ■APPLICATIONS Forward Voltage : VF=0.465V TYP. ●Rectification Forward Current : IF(AVE)=3A ●Protection against reverse connection of battery Repetitive Peak Reverse Voltage


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    PDF XBS304S17R-G ETR1615-002a XBS304S17R-G ETR1615-002a XBS30 304S17

    Schottky Barrier Diode

    Abstract: XBS303V19R XBS303V19R-G
    Text: XBS303V19R-G ETR16022-001 Schottky Barrier Diode, 3A, 30V Type •FEATURES ■APPLICATIONS Forward Voltage : VF=0.355V TYP. ●Rectification Forward Current : IF(AVE)=3A ●Protection against reverse connection of battery Repetitive Peak Reverse Voltage


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    PDF XBS303V19R-G ETR16022-001 303V19 Schottky Barrier Diode XBS303V19R XBS303V19R-G

    XBS304S17

    Abstract: DIODE 3a sma
    Text: XBS304S17 ETR1615-002 Schottky Barrier Diode, 3A, 40V Type •FEATURES ■APPLICATIONS Forward Voltage : VF=0.465V TYP. ●Rectification Forward Current : IF(AV)=3A ●Protection against reverse connection of battery Repetitive Peak Reverse Voltage : VRM=40V


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    PDF XBS304S17 ETR1615-002 XBS304S17 DIODE 3a sma

    Untitled

    Abstract: No abstract text available
    Text: XBS306S17 ETR1616-002 Schottky Barrier Diode, 3A, 60V Type •FEATURES ■APPLICATIONS Forward Voltage : VF=0.59V TYP. ●Rectification Forward Current : IF(AV)=3A ●Protection against reverse connection of battery Repetitive Peak Reverse Voltage : VRM=60V


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    PDF XBS306S17 ETR1616-002

    XBS303V17

    Abstract: "Schottky Barrier Diode"
    Text: XBS303V17 ETR1614-001 Schottky Barrier Diode, 3A, 30V Type •FEATURES ■APPLICATIONS Forward Voltage : VF=0.355V TYP. ●Rectification Forward Current : IF(AV)=3A ●Protection against reverse connection of battery Repetitive Peak Reverse Voltage : VRM=30V


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    PDF XBS303V17 ETR1614-001 XBS303V17 "Schottky Barrier Diode"

    XBS306S17

    Abstract: No abstract text available
    Text: XBS306S17 ETR1616-002 Schottky Barrier Diode, 3A, 60V Type •FEATURES ■APPLICATIONS Forward Voltage : VF=0.59V TYP. ●Rectification Forward Current : IF(AV)=3A ●Protection against reverse connection of battery Repetitive Peak Reverse Voltage : VRM=60V


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    PDF XBS306S17 ETR1616-002 XBS306S17

    Untitled

    Abstract: No abstract text available
    Text: XBS304S17 ETR1615-002 Schottky Barrier Diode, 3A, 40V Type •FEATURES ■APPLICATIONS Forward Voltage : VF=0.465V TYP. ●Rectification Forward Current : IF(AV)=3A ●Protection against reverse connection of battery Repetitive Peak Reverse Voltage : VRM=40V


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    PDF XBS304S17 ETR1615-002

    free diode

    Abstract: PWM 3V 5V NOTEBOOK MAX1644 MAX1623 MAX1624 Zeus Component
    Text: WORLD’S SMALLEST 3A DC-DC WITH SYNCHRONOUS RECTIFIER Internal Switches Eliminate External MOSFETs, Schottky Diode, and Current-Sense Resistor +3V to +5V + FB PWM CONTROL 1623 20mm FREQ ADJUST + 22mm ON/OFF ACTUAL COMPONENT SIZE FOR 3A CIRCUIT 20mm x 22mm


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    PDF MAX1623/MAX1644 MAX1623 MAX1644 350kHz 20-Pin MAX1623) 16-Pin MAX1644) MAX1624 free diode PWM 3V 5V NOTEBOOK MAX1644 MAX1623 MAX1624 Zeus Component

    XBS306S17

    Abstract: 306S17 XBS30
    Text: XBS306S17R-G ETR1616-002a Schottky Barrier Diode, 3A, 60V Type •FEATURES ■APPLICATIONS Forward Voltage : VF=0.59V TYP. ●Rectification Forward Current : IF(AVE)=3A ●Protection against reverse connection of battery Repetitive Peak Reverse Voltage : VRM=60V


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    PDF XBS306S17R-G ETR1616-002a XBS306S17 306S17 XBS30

    Untitled

    Abstract: No abstract text available
    Text: XBS303V19R-G ETR16022-001 Schottky Barrier Diode, 3A, 30V Type FEATURES APPLICATIONS Forward Voltage : VF=0.355V TYP. Rectification Forward Current : IF(AVE)=3A Protection against reverse connection of battery Repetitive Peak Reverse Voltage : VRM=30V PACKAGING INFORMATION


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    PDF XBS303V19R-G ETR16022-001

    Untitled

    Abstract: No abstract text available
    Text: XBS304S19R-G ETR16023-001 Schottky Barrier Diode, 3A, 40V Type FEATURES APPLICATIONS Forward Voltage : VF=0.465V TYP. Rectification Forward Current : IF(AVE)=3A Protection against reverse connection of battery Repetitive Peak Reverse Voltage : VRM=40V PACKAGING INFORMATION


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    PDF XBS304S19R-G ETR16023-001

    Untitled

    Abstract: No abstract text available
    Text: XBS303V17R-G ETR1614-001a Schottky Barrier Diode, 3A, 30V Type FEATURES APPLICATIONS Forward Voltage : VF=0.355V TYP. Rectification Forward Current : IF(AVE)=3A Protection against reverse connection of battery Repetitive Peak Reverse Voltage : VRM=30V ABSOLUTE MAXIMUM RATINGS


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    PDF XBS303V17R-G ETR1614-001a

    Untitled

    Abstract: No abstract text available
    Text: XBS306S17R-G ETR1616-002a Schottky Barrier Diode, 3A, 60V Type FEATURES APPLICATIONS Forward Voltage : VF=0.59V TYP. Rectification Forward Current : IF(AVE)=3A Protection against reverse connection of battery Repetitive Peak Reverse Voltage : VRM=60V ABSOLUTE MAXIMUM RATINGS


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    PDF XBS306S17R-G ETR1616-002a

    DVFN240S

    Abstract: No abstract text available
    Text: RRR030P03 Datasheet Pch 30V 3A Power MOSFET lOutline VDSS -30V RDS on (Max.) 75mW ID -3A PD 1.0W lFeatures TSMT3 (3) (1) (2) lInner circuit 1) Low on - resistance. (1) Gate (2) Source (3) Drain 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT3).


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    PDF RRR030P03 R1120A DVFN240S

    Untitled

    Abstract: No abstract text available
    Text: RSR030N06 Nch 60V 3A Power MOSFET Datasheet lOutline VDSS 60V RDS on (Max.) 85mW ID 3A PD 1W lFeatures TSMT3 (3) (1) (2) lInner circuit 1) Low on - resistance. (1) Gate (2) Source (3) Drain 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT3).


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    PDF RSR030N06 R1120A

    Untitled

    Abstract: No abstract text available
    Text: RSR030N06 Nch 60V 3A Power MOSFET Datasheet lOutline VDSS 60V RDS on (Max.) 85mW ID 3A PD 1W lFeatures TSMT3 (3) (1) (2) lInner circuit 1) Low on - resistance. (1) Gate (2) Source (3) Drain 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT3).


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    PDF RSR030N06 R1120A

    Untitled

    Abstract: No abstract text available
    Text: RSR030N06 Datasheet Nch 60V 3A Power MOSFET lOutline VDSS 60V RDS on (Max.) 85mW ID 3A PD 1W lFeatures TSMT3 (3) (1) (2) lInner circuit 1) Low on - resistance. (1) Gate (2) Source (3) Drain 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT3).


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    PDF RSR030N06 R1120A

    Untitled

    Abstract: No abstract text available
    Text: RRQ030P03 Pch -30V -3A Power MOSFET Datasheet lOutline VDSS -30V RDS on (Max.) 75mW ID -3A PD 1.25W lFeatures (6) TSMT6 (5) (4) (1) (2) (3) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) (5) (6) 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT6).


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    PDF RRQ030P03 R1120A

    Untitled

    Abstract: No abstract text available
    Text: RRQ030P03 Pch -30V -3A Power MOSFET Datasheet lOutline VDSS -30V RDS on (Max.) 75mW ID -3A PD 1.25W lFeatures (6) (5) TSMT6 (4) (1) (2) (3) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) (5) (6) 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT6).


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    PDF RRQ030P03 R1120A

    ND4151-3A

    Abstract: ND4151-3D
    Text: N E C / CALIFORNIA 1SE D • b427414 0001=145 S SEC K-BAND SILICON MIXER-DETECTOR SCHOTTKY DIODE ND4151-3A ND4151-3D OUTLINE DIMENSIONS FEATURES Units in mm • HIGH SENSITIVITY OUTLINE 3A • LOW DRIVE LEVEL • SMALL SIZE ' 4.0 MIN. - — • LOW COST


    OCR Scan
    PDF b427414 ND4151-3A ND4151-3D ND4151-3A ND4151-3D