Untitled
Abstract: No abstract text available
Text: HSCH-9161 HSCH-9162 GaAs Detector Diode Data Sheet Description Features The HSCH-916x is a discrete, beam lead, GaAs diode fabricated using the modified barrier integrated diode MBID process. • Low Junction Capacitance • fc >200 GHz • Lower Temperature
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HSCH-9161
HSCH-9162
HSCH-916x
HSCH916x
5989-6228EN
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TC611 Diode Model
Abstract: AGILENT TECHNOLOGIES 9161 AGILENT TECHNOLOGIES 9162 gamma detector tc6* agilent TC611 pn#2 hsch-9161 PN diode specifications GaAs Detector Diode
Text: HSCH-9161 HSCH-9162 GaAs Detector Diode Data Sheet Description Features The HSCH-916x is a discrete, beam lead, GaAs diode fabricated using the modified barrier integrated diode MBID process. • Low Junction Capacitance • fc >200 GHz • Lower Temperature
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HSCH-9161
HSCH-9162
HSCH-916x
HSCH916x
5989-6228EN
TC611 Diode Model
AGILENT TECHNOLOGIES 9161
AGILENT TECHNOLOGIES 9162
gamma detector
tc6* agilent
TC611
pn#2 hsch-9161
PN diode specifications
GaAs Detector Diode
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DTD5555A
Abstract: MK43 06DT dtd5555 SMS-331-01DT SMS-331-02DT SMS-331-03DT sms-331-06dt
Text: SP3T PIN Diode Switches 0.5 to 18.0GHz Non-Reflective Features: • • • • • Removable SMA Connectors Integral TTL Compatible Drivers Internally Terminated Miniature Outline Very Fast Switching Low Loss and High Isolation • Description: The SMS-331-00DT range of SP3T PIN diode
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SMS-331-00DT
-331-01DTP.
DTD5555A.
DTD5555A
MK43
06DT
dtd5555
SMS-331-01DT
SMS-331-02DT
SMS-331-03DT
sms-331-06dt
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1S2473 DIODE equivalent
Abstract: 1S2473 equivalent diode cross reference 1s2473 DIODE marking S4 59A marking 62N SOT23 1S2471 equivalent UHF/VHF TV Tuner HITACHI DIODE 1N4148 LL-34 DIODE ZENNER C25 1N52xx
Text: Status List HITACHI DIODE Vol.16-4 2002.11 Topic - Miniature Flat Lead Package Diode “HSN278WK” .2 Variable Capacitance Diodes for Electronic Tuning .4, 5
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HSN278WK"
HZC10
HZC11
HZC12
HZC13
HZC15
HZC16
HZC18
HZC20
HZC22
1S2473 DIODE equivalent
1S2473 equivalent
diode cross reference 1s2473
DIODE marking S4 59A
marking 62N SOT23
1S2471 equivalent
UHF/VHF TV Tuner HITACHI
DIODE 1N4148 LL-34
DIODE ZENNER C25
1N52xx
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NX8350TSxx
Abstract: NX8350TS PX10160E 10 gb laser diode
Text: Preliminary Data Sheet NX8350TS LASER DIODE 1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION R08DS0025EJ0100 Rev.1.00 Sep 19, 2010 DESCRIPTION The NX8350TS is a 1 271 to 1 331 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser
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NX8350TS
R08DS0025EJ0100
NX8350TS
IEEE802
NX8350TSxx
PX10160E
10 gb laser diode
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BYD67
Abstract: sod87 package sod87 marking code
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D121 BYD67 Ripple blocking diode Product specification Supersedes data of 1998 Nov 20 1999 Oct 20 Philips Semiconductors Product specification Ripple blocking diode BYD67 FEATURES DESCRIPTION • Glass passivated
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M3D121
BYD67
MAM061
BYD67
sod87 package
sod87 marking code
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WLD3343
Abstract: WTW002 1k trimpot vertical LM4040 WHS302 WHS320 WHY5640
Text: WLD3343 General Purpose Driver for Laser Diodes Pb FEATURES: GENERAL DESCRIPTION: The WLD3343 is an easy-to-use analog circuit for space contstrained, high-power laser diode applications. The WLD3343 maintains precision laser diode current constant current mode
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WLD3343
WLD3343
4-Aug-08
31-Aug-09
WLD3343-00400-A
WTW002
1k trimpot vertical
LM4040
WHS302
WHS320
WHY5640
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a1688
Abstract: ENA1688 RJ-200
Text: RJ2003JB Ordering number : ENA1688 SANYO Semiconductors DATA SHEET RJ2003JB Diffused Junction Silicon Diode Low VF • High-Speed Switching Diode Features • • • • • High breakdown voltage VRRM=300V . High reliability. Fast forward / reverse recovery time.
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RJ2003JB
ENA1688
A1688-3/3
a1688
ENA1688
RJ-200
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Untitled
Abstract: No abstract text available
Text: SDD66 40mm RECTIFIER DIODE 7000V / 520A The SDD66 rectifier diode features a nominal 40mm silicon junction diameter design , manufactured by the proven multi-diffusion process. High reverse voltage blocking capability is optimized with moderate recovery current and low forward voltage.
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SDD66
SDD66
SDD66MT
SDD66MR
SDD66MM0
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SDD66
Abstract: SDD66KT SDD66MD SDD66MH SDD66MM SDD66MR SDD66MT bokn
Text: SDD66 40mm RECTIFIER DIODE 7000V / 520A The SDD66 rectifier diode features a nominal 40mm silicon junction diameter design , manufactured by the proven multi-diffusion process. High reverse voltage blocking capability is optimized with moderate recovery current and low forward voltage.
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SDD66
SDD66
SDD66MT
SDD66MR
SDD66MM
SDD66KT
SDD66MD
SDD66MH
SDD66MR
SDD66MT
bokn
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5BJC4100
Abstract: F5BHC 5BBC3820
Text: General Purpose, Pulse and DC Transient Suppression F5B Series Metallized Polyester Film with Integrated Suppression Diode, 18 – 63 VDC Overview Applications The F5B Series is a metallized polyester film capacitor with an integrated suppression diode encapsulated in a thermosetting
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SDD66KT
Abstract: SDD66MD SDD66MH SDD66MM SDD66MR SDD66MT
Text: SDD66 40mm RECTIFIER DIODE 7000V / 520A SPCO The SDD66 rectifier diode features a nominal 40mm silicon junction diameter design , manufactured by the proven multi-diffusion process. High reverse voltage blocking capability is optimized with moderate recovery current and low forward voltage.
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SDD66
SDD66
150oC
-40oC
SDD66MT
SDD66MR
SDD66MM
SDD66MH
SDD66MD
SDD66KT
SDD66MD
SDD66MH
SDD66MM
SDD66MR
SDD66MT
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5BJC4100
Abstract: No abstract text available
Text: General Purpose, Pulse and DC Transient Suppression F5B Series Metallized Polyester Film with Integrated Suppression Diode, 18 – 63 VDC Overview Applications The F5B Series is a metallized polyester film capacitor with an integrated suppression diode encapsulated in a thermosetting
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WLD3343
Abstract: 1k trimpot vertical LM4040 WHS302 WHS320 WHY5640 Demo Laser Technology 50k trimpot vertical 10 pin laser diode
Text: WLD3343 HB General Purpose Driver for Laser Diodes Warning: This is a Low Voltage Device Pb FEATURES: GENERAL DESCRIPTION: The WLD3343 is an easy-to-use analog circuit for space contstrained laser diode applications. The WLD3343 maintains precision laser diode
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WLD3343
Apr-07
31-Aug-09
WLD3343HB00400A
1k trimpot vertical
LM4040
WHS302
WHS320
WHY5640
Demo Laser Technology
50k trimpot vertical
10 pin laser diode
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R422C
Abstract: MIL-F-3922/54-003
Text: Agilent R422C mm-Wave Planar-Doped Barrier Detector Data Sheet 26.5 to 40.0 GHz Outstanding Performance The Planar-Doped Barrier PDB diode technology combines the best characteristics of point-contact and low barrier Schottky to provide exceptional performance. This PDB diode technology provides
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R422C
R422C
5965-2880E
MIL-F-3922/54-003
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33190B
Abstract: 33144A 33102A HP 33134a HP 33144A
Text: Whnt mL'/iM HP AECWKLAERTDT Switch Driver for Fast SPST PIN Diode Switches Technical Data 33190B Features • TTL Com patible In p u t • H igh Speed Description diode/switch. The HP 33190B is designed specifically for the HP 33142A and 33144A model switches, but can be used to
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33190B
3102A/33104A
3132A/33134A
3142A/33144A
3142A
3144A
33144A
33102A
HP 33134a
HP 33144A
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BB215
Abstract: UHF diode
Text: • bbsa'm 0D24M0T 331 HiAPX N AUER PHILIPS/DISCRETE BB215 b?E D UHF VARIABLE CAPACITANCE DIODE The BB215 is a silicon variable capacitance diode in a hermetically sealed glass envelope SOD-8O and intended fo r application in UHF tuners. The leadless SOD-8O encapsulation is intended fo r surface
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0D24M0T
BB215
BB215
UHF diode
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NDL3200
Abstract: NEC k 2134
Text: DATA SHEET NEC LASER DIODE NDL3200 ELECTRON DEVICE 670 nm BAR CODE READER, POINTER APPLICATION AIGalnP DOUBLE HETEROSTRUCTURE VISIBLE LASER DIODE DESCRIPTION N D L 3 2 0 0 is an A IG alnP 6 7 0 nm visible laser diode and especially developed fo r Bar Code Reader, Pointer.
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NDL3200
NPL3200
LC--2134
1989M
NDL3200
NEC k 2134
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Untitled
Abstract: No abstract text available
Text: • bbS3^31 002440'! 331 B A P X N AUER PHILIPS/DISCRETE BB215 b?E D UHF VARIABLE CAPACITANCE DIODE The BB215 is a silicon variable capacitance diode in a hermetically sealed glass envelope SOD-80 and intended for application in UHF tuners. The leadless SOD-80 encapsulation is intended for surface
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BB215
BB215
OD-80)
OD-80
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Untitled
Abstract: No abstract text available
Text: SONY SLD322XT High Power Density 0.5 W Laser Diode D escription 3ackage Outline Unit : mm The S L D 3 2 2 X T is a high power, gain-guided laser diode produced by M O C V D method*’ . Com pared lo the S L D 3 0 0 Series, this laser diode has a high brightness
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SLD322XT
3fl23fl3
002DlDfi
S3fl23fl3
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Thyristor Xo 602 MA
Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Text: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and
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DIODE BAT
Abstract: SIEMENS VF 100
Text: SIEMENS Silicon Crossover Ring Quad Schottky Diode BAT 114-099R Features • High barrier diode for double balanced mixers, phase detectors and modulators ESD: Electrostatic Discharge sensitive device, observe handling precautions! Type Marking Ordering Code
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114-099R
Q62702-A1006
OT-143
EHA07012
DIODE BAT
SIEMENS VF 100
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1n4148 ITT
Abstract: 4148 itt LL4148 n4148 LL4148 dynamic resistance ITT DIODE LL4148-1 150D 1N4148
Text: ITT SEMICOND/ INTERMETALL blE J> M Mbfl2711 0003152 4T5 M I S I LL4148 Silicon Epitaxial Planar Diode fast switching diode in MiniMELF case especially suited for automatic insertion. Identical electrically to standard JEDEC 1N4148 I- 3.510.1-r Cathode M ark
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4bfl2711
LL4148
1N4148
DQQ31SS
1n4148 ITT
4148 itt
LL4148
n4148
LL4148 dynamic resistance
ITT DIODE
LL4148-1
150D
1N4148
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MT1115
Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
Text: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir
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108th
MT1115
2N3303
FPT100 phototransistor
UA739 equivalent
transistor bc 554 pnp
mt1039
ft2974
fairchild 2N3565
FD6666 diode
transistor npn Epitaxial Silicon SST 117
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