NX8350TS Search Results

NX8350TS Result Highlights (4)

Part	Manufacturer	Description
NX8350TS33-AZ	Renesas Electronics Corporation	271 to 1331 nm AlGaInAs MQW-DFB Laser Diode for 40 G BASE-LR4 Application
NX8350TS27-AZ	Renesas Electronics Corporation	271 to 1331 nm AlGaInAs MQW-DFB Laser Diode for 40 G BASE-LR4 Application
NX8350TS29-AZ	Renesas Electronics Corporation	271 to 1331 nm AlGaInAs MQW-DFB Laser Diode for 40 G BASE-LR4 Application
NX8350TS31-AZ	Renesas Electronics Corporation	271 to 1331 nm AlGaInAs MQW-DFB Laser Diode for 40 G BASE-LR4 Application

NX8350TS Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
NX8350TSxx Abstract: NX8350TS PX10160E 10 gb laser diode Text: Preliminary Data Sheet NX8350TS LASER DIODE 1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION R08DS0025EJ0100 Rev.1.00 Sep 19, 2010 DESCRIPTION The NX8350TS is a 1 271 to 1 331 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser	Original	PDF	NX8350TS R08DS0025EJ0100 NX8350TS IEEE802 NX8350TSxx PX10160E 10 gb laser diode

Catalog Datasheet

MFG & Type

PDF

Document Tags

NX8350TSxx

Abstract: NX8350TS PX10160E 10 gb laser diode
Text: Preliminary Data Sheet NX8350TS LASER DIODE 1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION R08DS0025EJ0100 Rev.1.00 Sep 19, 2010 DESCRIPTION The NX8350TS is a 1 271 to 1 331 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser

Original

PDF

NX8350TS R08DS0025EJ0100 NX8350TS IEEE802 NX8350TSxx PX10160E 10 gb laser diode