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    DIODE 302 Search Results

    DIODE 302 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE 302 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SKiiP 302 GH 061 - 257 CTV Absolute Maximum Ratings Symbol Visol 4 Top ,Tstg 1) Conditions AC, 1min Operating / stor. temperature Values 2500 -25.+85 IGBT and Inverse Diode VCES VCC 5) Operating DC link voltage IC IGBT Tj 3) IGBT + Diode IF Diode IFM Diode, tp < 1 ms


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    PDF IGBT11) Rthjs10)

    IN4 diode

    Abstract: HIGH LEVEL OPEN COLLECTOR OUTPUT DRIVER SEMIKRON SKIIP 72 GB 12 SKIIP DRIVER GD
    Text: SKiiP 302 GD 061 - 359 CTV Absolute Maximum Ratings Symbol Visol 4 Top ,Tstg 1) Conditions AC, 1min Operating / stor. temperature Values 2500 -25.+85 IGBT and Inverse Diode VCES VCC 5) Operating DC link voltage IC IGBT Tj 3) IGBT + Diode IF Diode IFM Diode, tp < 1 ms


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    PDF IGBT11) Rthjs10) IN4 diode HIGH LEVEL OPEN COLLECTOR OUTPUT DRIVER SEMIKRON SKIIP 72 GB 12 SKIIP DRIVER GD

    Diode 302

    Abstract: No abstract text available
    Text: SKiiP 302 GH 061 - 257 CTV Absolute Maximum Ratings Symbol Visol 4 Top ,Tstg 1) Conditions AC, 1min Operating / stor. temperature Values 2500 -25.+85 IGBT and Inverse Diode VCES VCC 5) Operating DC link voltage IC IGBT Tj 3) IGBT + Diode IF Diode IFM Diode, tp < 1 ms


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    PDF IGBT11) Rthjs10) Diode 302

    Untitled

    Abstract: No abstract text available
    Text: SKiiP 302 GD 061 - 359 CTV Absolute Maximum Ratings Symbol Visol 4 Top ,Tstg 1) Conditions AC, 1min Operating / stor. temperature Values 2500 -25.+85 IGBT and Inverse Diode VCES VCC 5) Operating DC link voltage IC IGBT Tj 3) IGBT + Diode IF Diode IFM Diode, tp < 1 ms


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    PDF IGBT11)

    biconvex lens with focal length 1 m and diameter 25.4 mm

    Abstract: laser diode DVD 100mw DL-3147-011 laser diode toshiba 780nm 650nm laser diode 200mw TOLD9225M mitsubishi laser diode OPHIR pd200 collimated LED 670 nm DL3147-011
    Text: Laser Diodes, Optics, and Related Components - Optima Laser Diodes Laser Diode Mounting Kits Laser Diode Optics Glass Aspheric Lenses Plastic Aspheric Lenses Multi-element Lenses Diode Laser Modules OEM Diode Laser Modules Collimated Diode Lasers Optical Power


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    PDF 658nm ML1016R 685nm ML1012R 785nm ML64114R Revised11JUN99 biconvex lens with focal length 1 m and diameter 25.4 mm laser diode DVD 100mw DL-3147-011 laser diode toshiba 780nm 650nm laser diode 200mw TOLD9225M mitsubishi laser diode OPHIR pd200 collimated LED 670 nm DL3147-011

    semikron skiip 32

    Abstract: semikron skiip 400 gb 302GD061-359CTV
    Text: SKiiP 302GD061-359CTV I. Power section Absolute maximum ratings Symbol Conditions Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms


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    PDF 302GD061-359CTV semikron skiip 32 semikron skiip 400 gb 302GD061-359CTV

    Aspheric Lens TO Can

    Abstract: 310-0065-780 305-0065-780 336 305 336-0808-830 lens laser diode HL6312G 785nm 780nm laser diode 300-0355-780
    Text: Optima Laser Diode Optics Cost Effective Lenses for Collimating and Focusing Laser Diodes Collimating and focusing a laser diode is perhaps the most critical prerequisite in any laser diode application. While the characteristics of a laser diode might be ideal for your


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    PDF 635nm 850nm. 01JAN01 Aspheric Lens TO Can 310-0065-780 305-0065-780 336 305 336-0808-830 lens laser diode HL6312G 785nm 780nm laser diode 300-0355-780

    Untitled

    Abstract: No abstract text available
    Text: SKiiP 3-phase bridge Absolute Maximum Ratings Symbol Visol 4 Top ,Tstg 1) Conditions AC, 1min Operating / stor. temperature Values 2500 -25.+85 IGBT and Inverse Diode VCES VCC 5) Operating DC link voltage IC IGBT Tj 3) IGBT + Diode IF Diode IFM Diode, tp < 1 ms


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    PDF IGBT11) Rthjs10)

    IGBT PROTECTION DIODE

    Abstract: IGBT11
    Text: SKiiP 3-phase bridge Absolute Maximum Ratings Symbol Visol 4 Top ,Tstg 1) Conditions AC, 1min Operating / stor. temperature Values 2500 -25.+85 IGBT and Inverse Diode VCES VCC 5) Operating DC link voltage IC IGBT Tj 3) IGBT + Diode IF Diode IFM Diode, tp < 1 ms


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    PDF IGBT11) IGBT PROTECTION DIODE IGBT11

    Untitled

    Abstract: No abstract text available
    Text: ar y n i im prel iC-HT DUAL CW LASER DIODE DRIVER Rev A1, Page 1/42 FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Laser diode modules ♦ CW laser diode drivers ♦ Embedded laser diode controllers ♦ Safety related laser controllers


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    PDF QFN28 QFN28-5x5 D-55294

    Untitled

    Abstract: No abstract text available
    Text: Laser Diodes y inar m i l pre iC-HT DUAL CW LASER DIODE DRIVER FEATURES ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ APPLICATIONS ♦ Laser diode modules ♦ CW laser diode drivers ♦ Embedded laser diode controllers ♦ Safety related laser controllers


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    PDF QFN28 QFN28-5x5

    Untitled

    Abstract: No abstract text available
    Text: ar y n i im prel iC-HT DUAL CW LASER DIODE DRIVER Rev B1, Page 1/45 FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Laser diode and LED modules ♦ CW N-/M-type laser diode drivers ♦ Embedded laser diode


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    PDF QFN28 QFN28-5x5 D-55294

    SVC321SPA

    Abstract: varactor diode AM EN699H 3881 AM receiver 6993
    Text: Ordering number :EN699H SVC321SPA Diffused Junction Type Sillicon Diode Varactor Diode IOCAP for AM Receiver Electronic Tuning Features Package Dimensions • The SVC321SPA is a varactor diode with a good linearity and high capacitance raito that is capable of


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    PDF EN699H SVC321SPA SVC321SPA SVC321SPA] varactor diode AM EN699H 3881 AM receiver 6993

    SVC321SPA

    Abstract: varactor diode AM 3881
    Text: Ordering number :EN699H SVC321SPA Diffused Junction Type Silicon Diode Varactor Diode IOCAP for AM Receiver Electronic Tuning Features Package Dimensions • The SVC321SPA is a varactor diode with a good linearity and high capacitance raito that is capable of


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    PDF EN699H SVC321SPA SVC321SPA SVC321SPA] varactor diode AM 3881

    SVC203SPA

    Abstract: 4013KI 9534 diode EN953C
    Text: Ordering number :EN953C SVC203SPA Diffused Junction Type Silicon Diode Varactor Diode IOCAP for FM Receiver Electronic Tuning Features Package Dimensions • The SVC203SPA is a varactor diode of dual type with a good linearity of C-V characteristic. It excels


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    PDF EN953C SVC203SPA SVC203SPA SVC203SPA] 4013KI 9534 diode EN953C

    C67047-A2252-A2

    Abstract: No abstract text available
    Text: BYP 302 FRED Diode • Fast recovery epitaxial diode • Soft recovery characteristics Type VRRM IFRMS trr Package Ordering Code BYP 302 1200V 40A 130ns TO-218 AD C67047-A2252-A2 Maximum Ratings Parameter Symbol Mean forward current IFAV TC = 90 °C, D = 0.5


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    PDF 130ns O-218 C67047-A2252-A2 C67047-A2252-A2

    Untitled

    Abstract: No abstract text available
    Text: MSWSER-070-10 SILICON PIN DIODE SWITCH ELEMENT DFN 3023 non-hermetic Description Features The MSWSER-070-10 is a PIN diode SPST switch element designed for medium incident power applications, up to 80 W C.W. It has low insertion loss. • Broadband performance up to 0.8 GHz


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    PDF MSWSER-070-10 MSWSER-070-10 STD-J-20C A17120

    a1712-1

    Abstract: No abstract text available
    Text: MSWSER-100-05 SILICON PIN DIODE SWITCH ELEMENT DFN 3023 non-hermetic Description Features The MSWSER-100-05 is a PIN diode SPST switch element designed for medium incident power applications, up to 80 W C.W. It has low insertion loss. • Broadband performance up to 0.8 GHz


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    PDF MSWSER-100-05 MSWSER-100-05 STD-J-20C A17121 a1712-1

    35V-250V

    Abstract: 5v Schottky barrier low leakage fast epitaxial diode 14F8 100ns-500ns
    Text: E L E C T R O N I C Brief of Schottky Barrier Diode Friday, 7 August 2009 Schottky Barrier Diode Schottky Barrier Diode SBD indeed more and more extensively to putting to use on Switching-Mode Power Supply (SMPS) in stead of Fast Recovery Epitaxial Diode (FRED). Not only the highest Reverse Recovery Time (trr) but also the lowest Forward Voltage Drop (VF), both are the


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    PDF 14F-8, 35V-250V 5v Schottky barrier low leakage fast epitaxial diode 14F8 100ns-500ns

    1S2473 DIODE equivalent

    Abstract: 1S2473 equivalent diode cross reference 1s2473 DIODE marking S4 59A marking 62N SOT23 1S2471 equivalent UHF/VHF TV Tuner HITACHI DIODE 1N4148 LL-34 DIODE ZENNER C25 1N52xx
    Text: Status List HITACHI DIODE Vol.16-4 2002.11 Topic - Miniature Flat Lead Package Diode “HSN278WK” .2 Variable Capacitance Diodes for Electronic Tuning .4, 5


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    PDF HSN278WK" HZC10 HZC11 HZC12 HZC13 HZC15 HZC16 HZC18 HZC20 HZC22 1S2473 DIODE equivalent 1S2473 equivalent diode cross reference 1s2473 DIODE marking S4 59A marking 62N SOT23 1S2471 equivalent UHF/VHF TV Tuner HITACHI DIODE 1N4148 LL-34 DIODE ZENNER C25 1N52xx

    MSWSH-020-24

    Abstract: MEST2G-025-10
    Text: Spice Models for Aeroflex / Metelics PIN Diode Switch Elements CHIP Robert Caverly Non-Linear Diode SPICE N=1 PIN Diode SPST & SPDT Switch Elements S Par's Is mA Iknee mA Repi Ohm s CJmod Series PIN Y Y 2.50E-07 5 1000 0.04 MEST2GFC-010-25 Series Pin N N


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    PDF 50E-07 MEST2GFC-010-25 MEST2G-020-15 30E-07 90E-06 MEST2G-050-45 A17134 MSWSH-020-24 MEST2G-025-10

    BYP302

    Abstract: TO-218AD Package
    Text: SIEMENS BYP 302 FRED Diode • Fast recovery epitaxial diode • Soft recovery characteristics Type BYP 302 Vrrm 1200V V rms 'rr Package Ordering Code 40A 130ns TO-218AD C67047-A2252-A2 Maximum Ratings Parameter Symbol Mean forward current /fav Tc = 90 °C, D = 0.5


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    PDF 130ns O-218AD C67047-A2252-A2 BYP302 TO-218AD Package

    CL67

    Abstract: 32MHz quartz RESONATOR 550KQ
    Text: iC-VJ, iC-VJZ •Haus LASER DIODE CONTROLLER FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ Laser diode driver up to 250mA Averaging control of laser power Protective functions to prevent destruction of laser diode Laser-current monitor with current or voltage output


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    PDF 250mA 500/iA CL67 32MHz quartz RESONATOR 550KQ

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BYP 302 FRED Diode • Fast recovery epitaxial diode • Soft recovery characteristics Type Arrivi ^FRMS frr Package Ordering Code BYP 302 1200V 40A 130ns TO-218 AD C67047-A2252-A2 Maximum Ratings Parameter Symbol Mean forward current /fav 7q = 90 °C ,D = 0 .5


    OCR Scan
    PDF 130ns O-218 C67047-A2252-A2