pn junction diode structure
Abstract: "Power Diode" smd 3a LM317 spice MOSFET HALF BRIDGE Power Supply AC TO DC5V 50 IGBT 60A spice model AC DC 60v 10amp 31DF2 S0D-123 ferrite transformer power for power supply atx what is THERMAL RUNAWAY IN RECTIFIER MOSFET
Text: CONTENTS Diode is the basics power semiconductor 1 Structure, symbol, and basic nature of diode １ Rectifier diode for general use, and fast recovery diode 2 Experiments to ascertain basic nature of diode — Forward and Reverse characteristics 2 Forward power loss and reverse power loss
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frequency stability analysis colpitts oscillator
Abstract: phase detector 10khz Colpitts VCO design Colpitts colpitts oscillator LMH6624 LMK03000 LMX2531 LP5900 noise diode
Text: Local oscillator Characteristics and design considerations Varactor diode • Also named as variable capacitance diode • Diode capacitance changes with reverse bias • Used as a variable capacitor • A capacitor in parallel with an inductor forms a tank circuit
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200Hz
500KHz
LMK03000
frequency stability analysis colpitts oscillator
phase detector 10khz
Colpitts VCO design
Colpitts
colpitts oscillator
LMH6624
LMX2531
LP5900
noise diode
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thyristor control arc welding rectifier circuit
Abstract: 400 amp SCR used for welding rectifier welding transformer SCR ABB thyristor modules PN5-10DA 400 amp thyristor used for welding rectifier MDS100 three phase triac control arc welder inverter 3KW INDUCTION HEATING POWER SUPPLY
Text: Company Profile GREEGOO Electric Co., Ltd, located in Wenzhou, the electric capital of China, is specialized in developing, manufacturing and distributing solid state relays, thyristor modules, diode modules, thyristor diode modules, fast recovery diode, single phase & three phase bridge rectifier and press fit diodes etc. along with about 150
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ISO9001
DXC-614Heatsink
thyristor control arc welding rectifier circuit
400 amp SCR used for welding rectifier
welding transformer SCR
ABB thyristor modules
PN5-10DA
400 amp thyristor used for welding rectifier
MDS100
three phase triac control
arc welder inverter
3KW INDUCTION HEATING POWER SUPPLY
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Q67040-S4370
Abstract: No abstract text available
Text: SDP06S60 SDB06S60 Preliminary data Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 21 nC • No reverse recovery IF
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SDP06S60
SDB06S60
P-TO220-3
P-TO220-3-1
Q67040-S4371
D06S60
Q67040-S4370
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Untitled
Abstract: No abstract text available
Text: SDP04S60 SDD04S60 Preliminary data Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 13 nC • No reverse recovery IF
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SDP04S60
SDD04S60
P-TO252-3-1
P-TO220-3-1
Q67040-S4369
D04S60
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Untitled
Abstract: No abstract text available
Text: ISL9K3060G3 30A, 600V Stealth Dual Diode General Description Features The ISL9K3060G3 is a Stealth™ dual diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current
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ISL9K3060G3
ISL9K3060G3
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K1560G3
Abstract: ISL9K1560G3 TA49410 TB334 TB 136
Text: ISL9K1560G3 15A, 600V Stealth Dual Diode General Description Features The ISL9K1560G3 is a Stealth™ dual diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current
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ISL9K1560G3
ISL9K1560G3
K1560G3
TA49410
TB334
TB 136
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k1560g3
Abstract: ISL9K1560G3 TA49410 TB334
Text: ISL9K1560G3 15A, 600V Stealth Dual Diode General Description Features The ISL9K1560G3 is a Stealth™ dual diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current
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ISL9K1560G3
ISL9K1560G3
k1560g3
TA49410
TB334
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K8120P3
Abstract: FAIRCHILD to220ab package K8120P K-8120 Diode 1200V 8A
Text: ISL9K8120P3 8A, 1200V Stealth Dual Diode General Description Features The ISL9K8120P3 is a Stealth™ dual diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current
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ISL9K8120P3
ISL9K8120P3
O-220
K8120P3
K8120P3
FAIRCHILD to220ab package
K8120P
K-8120
Diode 1200V 8A
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K18120G3
Abstract: No abstract text available
Text: ISL9K18120G3 18A, 1200V Stealth Dual Diode General Description Features The ISL9K18120G3 is a Stealth™ dual diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current
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ISL9K18120G3
ISL9K18120G3
K18120G3
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RURG3060
Abstract: No abstract text available
Text: RURG3060 Data Sheet January 2002 30A, 600V Ultrafast Diode Features The RURG3060 is an ultrafast diode with soft recovery characteristics trr < 55ns . It has low forward voltage drop and is silicon nitride passivated ion-implanted epitaxial planar construction.
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RURG3060
RURG3060
175oC
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K30120G3
Abstract: ISL9K30120G3 smart ups 750 circuit MOSFET 1200v 30a K30120G AN-7528 IGBT 500A 1200V mosfet 1200V 30a smps
Text: ISL9K30120G3 30A, 1200V Stealth Dual Diode General Description Features The ISL9K30120G3 is a Stealth™ dual diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current
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ISL9K30120G3
ISL9K30120G3
K30120G3
smart ups 750 circuit
MOSFET 1200v 30a
K30120G
AN-7528
IGBT 500A 1200V
mosfet 1200V 30a smps
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RURU75120
Abstract: No abstract text available
Text: RURU75120 Data Sheet January 2002 75A, 1200V Ultrafast Diode Features The RURU75120 is an ultrafast diode with soft recovery characteristics trr < 125ns . It has low forward voltage drop and is silicon nitride passivated ion-implanted epitaxial planar construction.
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RURU75120
RURU75120
125ns)
125ns
175oC
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RURP30120
Abstract: RUR30120
Text: RURP30120 Data Sheet January 2002 30A, 1200V Ultrafast Diode Features The RURP30120 is an ultrafast diode with soft recovery characteristic trr < 110ns . It has low forward voltage drop and is silicon nitride passivated ion-implanted epitaxial planar construction.
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RURP30120
RURP30120
110ns)
110ns
175oC
RUR30120
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K3060g3
Abstract: ISL9K3060G3 TB334
Text: ISL9K3060G3 30A, 600V Stealth Dual Diode General Description Features The ISL9K3060G3 is a Stealth™ dual diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current
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ISL9K3060G3
ISL9K3060G3
K3060g3
TB334
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K8120P3
Abstract: AN-7528 K8120P ISL9K8120P3 780V TA49413
Text: ISL9K8120P3 8A, 1200V Stealth Dual Diode General Description Features The ISL9K8120P3 is a Stealth™ dual diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current
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ISL9K8120P3
ISL9K8120P3
K8120P3
AN-7528
K8120P
780V
TA49413
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RURG30120
Abstract: No abstract text available
Text: RURG30120 Data Sheet January 2002 30A, 1200V Ultrafast Diode Features The RURG30120 is an ultrafast diode with soft recovery characteristic trr < 110ns . It has low forward voltage drop and is silicon nitride passivated ion-implanted epitaxial planar construction.
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RURG30120
RURG30120
110ns)
110ns
175oC
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URU100120
Abstract: RURU100120 URU100
Text: RURU100120 Data Sheet January 2002 100A, 1200V Ultrafast Diode Features The RURU100120 is an ultrafast diode with soft recovery characteristics trr < 125ns . It has low forward voltage drop and is silicon nitride passivated ion-implanted epitaxial planar construction.
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RURU100120
RURU100120
125ns)
125ns
175oC
URU100120
URU100
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G8060
Abstract: ruru8060 RUR 0820 TB-01
Text: [ /Title RUR G8060 /Subject (80A, 600V Ultrafa st Diode) /Autho r () /Keywords (80A, 600V Ultrafa st Diode, Intersil Corporation, semiconductor, Avalanche Energy Rated, Switch ing Power Supplies, Power Switch ing Cir- RURU8060 Data Sheet October 2001 File Number
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G8060
RURU8060
RURU8060
G8060
RUR 0820
TB-01
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Untitled
Abstract: No abstract text available
Text: ISL9K1560G3 15A, 600V Stealth Dual Diode General Description Features The ISL9K1560G3 is a Stealth™ dual diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current
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ISL9K1560G3
ISL9K1560G3
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RURH15100CC
Abstract: URH15100C
Text: RURH15100CC Data Sheet January 2000 File Number 2934.3 15A, 1000V Ultrafast Dual Diode Features The RURH15100CC is an ultrafast dual diode with soft recovery characteristics trr < 100ns . It has low forward voltage drop and is of silicon nitride passivated
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RURH15100CC
RURH15100CC
100ns)
100ns
URH15100C
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URU100120
Abstract: RURU100120
Text: RURU100120 Data Sheet January 2000 File Number 3545.3 100A, 1200V Ultrafast Diode Features The RURU100120 is an ultrafast diode with soft recovery characteristics trr < 125ns . It has low forward voltage drop and is silicon nitride passivated ion-implanted epitaxial
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RURU100120
RURU100120
125ns)
125ns
URU100120
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RURU50100
Abstract: No abstract text available
Text: RURU50100 Data Sheet January 2002 50A, 1000V Ultrafast Diode Features The RURU50100 is an ultrafast diode with soft recovery characteristics trr < 125ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.
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RURU50100
RURU50100
125ns)
125ns
175oC
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MTX70A
Abstract: FF300R12KS4 MOTOR SOFT START MDS100 mfq 60A bridge rectifier SSC AC welder IGBT circuit ZG300HFL120C2S 3phase bridge diode mds 60 SKM200GB125DN
Text: ì Power Modules STANDARD THYRISTOR MODULE STANDARD DIODE MODULE 27 THYRISTOR-DIODE MODULE 28 FAST THYRISTOR / DIODE MODULE 29 NON-INSULATION POWER MODULE CAPSULE VERSION POWER MODULE & MOUNTING CLAMP BRIDGE RECTIFER MODULE 30-31 31 32-34 £ 4 t S / i B t W f d U : « * « » SCHOTTKY/SUPER FAST RECOVERY DIODE MODULE 34-35
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OCR Scan
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3s300A
ZG50HFL120C1S
SKM75GB128DN
BSM50GB120DLC
ZG75HFL120C1S
SKM100GB128DN
BSM75GB120DLC
ZG100HFL120C1S
SKM145GB128DN
BSM100GB120DLCK
MTX70A
FF300R12KS4
MOTOR SOFT START
MDS100
mfq 60A
bridge rectifier SSC
AC welder IGBT circuit
ZG300HFL120C2S
3phase bridge diode mds 60
SKM200GB125DN
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