Untitled
Abstract: No abstract text available
Text: 1N6490+JANTXV Diodes General-Purpose Reference/Regulator Diode Military/High-RelY V Z Nom.(V) Reference Voltage5.1 @I(Z) (A) (Test Condition)49m Tolerance (%) P(D) Max. (W)1.5 Z(z) Max. (ê) Dyn. Imped.7.0 Temp Coef pp/10k3.0 Maximum Operating Temp (øC)175
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1N6490
pp/10k3
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Untitled
Abstract: No abstract text available
Text: 1N6490+JAN Diodes General-Purpose Reference/Regulator Diode Military/High-RelY V Z Nom.(V) Reference Voltage5.1 @I(Z) (A) (Test Condition)49m Tolerance (%) P(D) Max. (W)1.5 Z(z) Max. (ê) Dyn. Imped.7.0 Temp Coef pp/10k3.0 Maximum Operating Temp (øC)175
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1N6490
pp/10k3
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Untitled
Abstract: No abstract text available
Text: 1N6496+JANTX Diodes Core-Driver Diode Array Military/High-RelY Circuits Per Package2 Diodes Per Circuit16 I F Max. (A) Forward Current300m V(RRM) (V) Rep.Pk.Rev. Voltage50 t(rr) Max.(s) Rev. Rec. Time20n @I(F) (A) (Test Condition)200m @I(R) (A) (Test Condition)200m
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1N6496
Circuit16
Current300m
Voltage50
Time20n
Current50n
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Untitled
Abstract: No abstract text available
Text: 1N6496+JANTXV Diodes Core-Driver Diode Array Military/High-RelY Circuits Per Package2 Diodes Per Circuit16 I F Max. (A) Forward Current300m V(RRM) (V) Rep.Pk.Rev. Voltage50 t(rr) Max.(s) Rev. Rec. Time20n @I(F) (A) (Test Condition)200m @I(R) (A) (Test Condition)200m
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1N6496
Circuit16
Current300m
Voltage50
Time20n
Current50n
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Untitled
Abstract: No abstract text available
Text: 1N6496+JAN Diodes Core-Driver Diode Array Military/High-RelY Circuits Per Package2 Diodes Per Circuit16 I F Max. (A) Forward Current300m V(RRM) (V) Rep.Pk.Rev. Voltage50 t(rr) Max.(s) Rev. Rec. Time20n @I(F) (A) (Test Condition)200m @I(R) (A) (Test Condition)200m
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1N6496
Circuit16
Current300m
Voltage50
Time20n
Current50n
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567d
Abstract: 1N6492 1N6492U4
Text: INCH-POUND MIL-PRF-19500/567D 8 February 2008 SUPERSEDING MIL-PRF-19500/567C 12 September 2003 The documentation and process conversion measures necessary to comply with this revision shall be completed by 8 May 2008. PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON,
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MIL-PRF-19500/567D
MIL-PRF-19500/567C
1N6492,
1N6492U4,
MIL-PRF-19500.
567d
1N6492
1N6492U4
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1N6496
Abstract: 1N6101 1n6511 1N6506 1N6507 1N5768 1N5770 1N5772 1N5774 1N6100
Text: INCH-POUND MIL-PRF-19500/474G 22 August 2008 SUPERSEDING MIL-PRF-19500/474F 23 January 2007 The documentation and process conversion measures necessary to comply with this revision shall be completed by 22 November 2008. PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, SILICON, MULTIPLE DIODE ARRAYS,
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MIL-PRF-19500/474G
MIL-PRF-19500/474F
1N5768,
1N5770,
1N5772,
1N5774,
1N6100,
1N6101,
1N6496,
1N6506,
1N6496
1N6101
1n6511
1N6506
1N6507
1N5768
1N5770
1N5772
1N5774
1N6100
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572B
Abstract: jantx diodes 572-B 1N6502 Lux Standards table 1N6493 1N6494 1N6495 1N6500 1N6501
Text: The documentation and process conversion measures necessary to comply with the revision shall be completed by 30 January 1999 INCH-POUND MIL-PRF-19500/572B 30 October 1998 SUPERSEDING MIL-S-19500/572A 23 November 1994 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, LIGHT EMITTING
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MIL-PRF-19500/572B
MIL-S-19500/572A
1N6493,
1N6494,
1N6495,
1N6500,
1N6501,
1N6502
MIL-PRF-19500.
572B
jantx diodes
572-B
1N6502
Lux Standards table
1N6493
1N6494
1N6495
1N6500
1N6501
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1N4465
Abstract: 1N6491C 1N4460 1N6485 i7822 1N4460C 1N4460D 1N4496 1N4496C 1N4496D
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 27 February 2008 MIL-PRF-19500/406H 21 November 2008 SUPERSEDING MIL-PRF-19500/406G 23 June 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICES, DIODE, SILICON, VOLTAGE REGULATOR,
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MIL-PRF-19500/406H
MIL-PRF-19500/406G
1N4460,
1N4460C,
1N4460D
1N4496,
1N4496C,
1N4496D,
1N6485,
1N6485C,
1N4465
1N6491C
1N4460
1N6485
i7822
1N4460C
1N4496
1N4496C
1N4496D
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1N5770
Abstract: No abstract text available
Text: INCH-POUND MIL-PRF-19500/474F 23 January 2007 SUPERSEDING MIL-PRF-19500/474E 3 November 1997 The documentation and process conversion measures necessary to comply with this revision shall be completed by 23 March 2007. * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, SILICON, MULTIPLE DIODE ARRAYS,
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MIL-PRF-19500/474F
MIL-PRF-19500/474E
1N5768,
1N5770,
1N5772,
1N5774,
1N6100,
1N6101,
1N6496,
1N6506,
1N5770
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406G
Abstract: 406-G 1N4465 1N4460D 1N4477 1N4460 1N4471 1N4469 1N4474 1N4466
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 23 September 2006. INCH-POUND MIL-PRF-19500/406G 23 June 2006 SUPERSEDING MIL-PRF-19500/406F 24 November 2004 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICES, DIODE, SILICON, VOLTAGE REGULATOR,
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MIL-PRF-19500/406G
MIL-PRF-19500/406F
1N4460,
1N4460C,
1N4460D
1N4496,
1N4496C,
1N4496D,
1N6485,
1N6485C,
406G
406-G
1N4465
1N4477
1N4460
1N4471
1N4469
1N4474
1N4466
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DIODE 1N649
Abstract: diode 351 1N649 JANTX diode 1n645 1N649-1 JANTX 1N647-1 JANTX equivalent 1N647-1 1N647-1 JANTXV 1N649-1 1N649UR1 JAN
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 13 November 2009. MIL-PRF-19500/240R 13 August 2009 SUPERSEDING MIL-PRF-19500/240P 5 September 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, RECTIFIER,
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MIL-PRF-19500/240R
MIL-PRF-19500/240P
1N645-1,
1N647-1,
1N649-1,
1N645UR-1,
1N647UR-1,
1N649UR-1,
MIL-PRF-19500.
DIODE 1N649
diode 351
1N649 JANTX
diode 1n645
1N649-1 JANTX
1N647-1 JANTX equivalent
1N647-1
1N647-1 JANTXV
1N649-1
1N649UR1 JAN
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Untitled
Abstract: No abstract text available
Text: DUAL SCHOTTKY RECTIFIER 1N6492-DA 1N6492-DC • • • • • • • Dual Rectifier in One Package Common Anode or Cathode Option Extremely Low VF and IR High Surge Capability Low Recovery Charge Low Profile TO-39 Hermetic Package High-Reliability Screening Options Available
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1N6492-DA
1N6492-DC
1N6492-DA-JQRS
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1n6492
Abstract: LE17 MIL-PRF19500 QR217
Text: DUAL SCHOTTKY RECTIFIER 1N6492-DA 1N6492-DC • • • • • • • Dual Rectifier in One Package Common Anode or Cathode Option Extremely Low VF and IR High Surge Capability Low Recovery Charge Low Profile TO-39 Hermetic Package High-Reliability Screening Options Available
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1N6492-DA
1N6492-DC
1N6492-DA-JQRS
1n6492
LE17
MIL-PRF19500
QR217
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1N1743
Abstract: IN5234 IN5008 1N4202 zener diode 1N PH 48 diode 1n1418 1NS232 zener diode c51 ph 1n587 1N4465
Text: ZENER DIODE/RECTIFIER CROSS REFERENCE CHART Containing all JE D E C registered Zener diodes. This popular reference chart contains highlight information on all JE D E C registered Zener diode and rectifier types as well as Microsemi types. The following Codes are used:
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1N225
1N2260)
1N227
1N228
1N229
1N230O)
1N231d)
1N232
BZX83
BZX97
1N1743
IN5234
IN5008
1N4202
zener diode 1N PH 48
diode 1n1418
1NS232
zener diode c51 ph
1n587
1N4465
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diode 4483
Abstract: RZ2h marking E 1n diode marking 1n diode zener 4474 1N4471
Text: 1N4460 thru 1N4496 and 1N6485 thru 1N6491 Microsemi Corp. The diode experts SCOTTSDALE, /1Z ☆JANS* 1.5 WATT GLASS ZENER DIODES FEATURES • • • • • • • • Microminiature package. High performance characteristics. Stable operation at temperatures to 200°C .
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1N4460
1N4496
1N6485
1N6491
1N6491
diode 4483
RZ2h
marking E 1n diode
marking 1n diode
zener 4474
1N4471
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1n645
Abstract: 1n649 1N64 1N646
Text: 1N645 THRU 1N649 MINIATURE GLASS PASSIVATED SILICON RECTIFIER Voltage - 225 to 600 Volts Current- 400 Milliamperes FEATURES ♦ High temperature metallurgical^ bonded compression contacts as found in diode-con structed rectifiers ♦ 0.4 Ampere operation at Ta = 25’C with no ther^
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1N645
1N649
MIL-S-19500
1n649
1N64
1N646
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DIODE 1N649
Abstract: diode 1N645 JANTX markings on diode marking 332 1N649 JANTX 1N647 military part marking symbols jan 1N647-1 JANTX 1N647-1 1N645-1 JANS
Text: MIL SPECS I C | 0 D D 0 1 2 S 0001574 4 | T-of-cy \ NOTICE I IOF VALIDATION ! INCH-POUND MIL-S-19500/240E NOTICE 1 24 August 1988 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, RECTIFIER, TYPES 1N645, 1N647, 1N649, JAN AND JANTX; 1N645-1, 1N647-1
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MIL-S-19500/240E
1N645,
1N647,
1N649,
1N645-1,
1N647-1
1N649-1,
MIL-S-19500/240E,
1N647-1,
DIODE 1N649
diode 1N645
JANTX markings on diode
marking 332
1N649 JANTX
1N647
military part marking symbols jan
JANTX 1N647-1
1N645-1 JANS
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.25 watt Zener diode
Abstract: 1N4465 1N4475 1N4474 n448 N449 1N4460 1N4496 1N6485 1N6486
Text: 1N 4460 thru 1N 4496 and 1N 6485 thru 1N6491 Microsemi Corp. The diode experts SCOTTSDALE, /1Z ☆JÀ N S Ï 1.5 WATT G LA SS ZEN ER DIODES FEATURES • • • • • • • • Microminiature package. High performance characteristics. Stable operation at temperatures to 200°C.
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1N4460
1N4496
1N6485
1N6491
MIL-S-19500/406.
.25 watt Zener diode
1N4465
1N4475
1N4474
n448
N449
1N6486
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LG color tv Circuit Diagram schematics
Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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3186J
LG color tv Circuit Diagram schematics
free transistor equivalent book 2sc
NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG
RCA SK CROSS-REFERENCE
KIA 4318
transistor cs 9012
Til 322A
sx3704
diode d.a.t.a. book
1N1007
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1N6227
Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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TIS43
Abstract: equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent
Text: The Transistor and Diode Data Book for Design Engineers Volume II Northern European Edition IMPORTANT NOTICES Texas Instrum ents Ltd ., reserves the rig h t to make changes at any tim e in order to improve design and to supply the best p ro d u c t possible.
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2S301
BS9300-C-598
2S305
BS9300-C-366
2S307
2S322
CV7396
BS9300-C-396
CV7647
BS9300-C-647
TIS43
equivalent of transistor bc214
BF257 Texas
equivalent of transistor bc212 bc 214
2N696 TEXAS INSTRUMENTS
Q2T2222
TIS70
BFR40
kd 2060 transistor
BF195 equivalent
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N6491
Abstract: 1N649-1 1N645-1 1N647-1 1N645-1 JAN 1N645-1 JANS
Text: JAN 1 N 6 4 5 -1 thru JAN 1 N 6 4 9 -1 Micro/semi Corp. The diode experts SANTA ANA, CA ☆JANS* F o r m o re in fo rm a tio n call: 714 979-8220 FEATURES MILITARY RECTIFIERS • M ICRO M INIATURE PACKAGE • VO IDLESS HERMETICALLY SEALED GLASS PACKAGE • TRIPLE LAYER PASSIVATION
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1N645-1
1N649-1
MIL-S-19500/Z40
N645-1
1N647-1
N649-1
400mAdc
150mAdc,
1N645-1
N6491
1N649-1
1N645-1 JAN
1N645-1 JANS
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