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    DIODE 1N6045 Search Results

    DIODE 1N6045 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE 1N6045 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    diode 1n6045

    Abstract: No abstract text available
    Text: Part: 1N6045 Series: 1N60 Series - 1500W Hermetically Sealed Metal TVS Diode For Harsh Industrial Applications Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current


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    PDF 1N6045 /10x1000Â 10x160Â 10x1000 10x1000Â diode 1n6045

    1N6037A

    Abstract: 1N6036A JESD22-A102 Diode LT 5230
    Text: INCH-POUND MIL-PRF-19500/717 9 May 2005 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, NON-HERMETIC, EPOXY, SURFACE MOUNT, SILICON, BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR, TYPES 1N6036AUEG THROUGH 1N6072AUEG, 1N6036AUEJ THROUGH 1N6072AUEJ, JAN, JANTX, AND JANTXV


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    PDF MIL-PRF-19500/717 1N6036AUEG 1N6072AUEG, 1N6036AUEJ 1N6072AUEJ, MIL-PRF-19500. 1N6037A 1N6036A JESD22-A102 Diode LT 5230

    1N6042

    Abstract: 1N6069 1N6052A 1N6053A diode 1n60 1N6058A 1N6038 1N6049 1N6054 1N6055A
    Text: Silicon Avalanche Diodes 1500 Watt Metal Axial Leaded Transient Voltage Suppressors 1N60 Series FEATURES 6 • Hermetically sealed SILICON DIODE ARRAYS • Breakdown voltage range 6.8 - 200 volts • Glass passivated junction • Excellent clamping capability


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    PDF DO-13 1N6069A* 1N6070 1N6070A 1N6071* 1N6071A* 1N6072 1N6072A 1N6042 1N6069 1N6052A 1N6053A diode 1n60 1N6058A 1N6038 1N6049 1N6054 1N6055A

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    Abstract: No abstract text available
    Text: Silicon Avalanche Diodes 1500 Watt Metal Axial Leaded Transient Voltage Suppressors 1N60 Series FEATURES 6 • Hermetically sealed SILICON DIODE ARRAYS • Breakdown voltage range 6.8 - 200 volts • Glass passivated junction • Low zener impedance • 100% surge tested


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    PDF DO-13 MIL-STD-206069* 1N6069A* 1N6070 1N6070A 1N6071* 1N6071A* 1N6072 1N6072A 1N6053*

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    Abstract: No abstract text available
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 23 February 2012. INCH-POUND MIL-PRF-19500/507F 23 November 2011 SUPERSEDING MIL-PRF-19500/507E 7 August 2007 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, BIPOLAR TRANSIENT


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    PDF MIL-PRF-19500/507F MIL-PRF-19500/507E 1N6036A 1N6072A MIL-PRF-19500.

    mil-prf-19500/MIL-PRF-19500/478

    Abstract: No abstract text available
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 12 December 1999. INCH-POUND MIL-PRF-19500/507C 12 September 1999 SUPERSEDING MIL-S-19500/507B 9 December 1992 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, BIPOLAR TRANSIENT


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    PDF MIL-PRF-19500/507C MIL-S-19500/507B 1N6036A 1N6072A mil-prf-19500/MIL-PRF-19500/478

    1N6059

    Abstract: 1N6055A JANTX 1N6036A 1N6037A 1N6038A 1N6039A 1N6072A VQE 21 d 452a
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 7 November 2007. INCH-POUND MIL-PRF-19500/507E 7 August 2007 SUPERSEDING MIL-PRF-19500/507D 8 August 2003 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, BIPOLAR TRANSIENT


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    PDF MIL-PRF-19500/507E MIL-PRF-19500/507D 1N6036A 1N6072A MIL-PRF-19500. 1N6059 1N6055A JANTX 1N6037A 1N6038A 1N6039A 1N6072A VQE 21 d 452a

    c5088 transistor

    Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
    Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154


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    PDF 1853IMPATT c5088 transistor transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N

    UJT-2N2646 PIN DIAGRAM DETAILS

    Abstract: UJT-2N2646 1N5844 transistor GDV 64A motorola diode marking 925b Zener Diode SOT-23 929b 1N4042A Motorola 1n4504 1N5856B 1n5844 diode
    Text: Motorola TVS/Zener Device Data Alphanumeric Index of Part Numbers 1 Cross Reference and Index 2 Selector Guide for Transient Voltage Suppressors and Zener Diodes 3 Transient Voltage Suppressors Axial Leaded Data Sheets 4 Transient Voltage Suppressors Surface Mounted Data Sheets


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    SMD Transistors w04 sot-23

    Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
    Text: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.


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    PDF represent9-14 SMD Transistors w04 sot-23 transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355

    What is a TRANSZORB

    Abstract: SCL20A 1N6302A 1.5KE 180A keytek* 424 generator SCM120A diode 1.5ke 13A 5643A 1N6042A 5kp28a, 15000W reco relay
    Text: TransZorb PROVIDING PROTECTION FOR • Telecommunications • Military • Computer • Industrial • Test & Instrumentation • Medical • Automotive GENERAL SEMICONDUCTOR INDUSTRIES, INC. A TransZorb® is a class o f diode, tw o term inal, that is designed


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    1N6066 thomson

    Abstract: lpp 68 g1 don connex 6064A 1N6036
    Text: S G S —THOMSON S'ìC 59C ^ T H O M S O 02625 D 1I 7^ 237 GGG2b25 D 7 > //-£3 ’ N - C S F 1 1 M 6 0 3 6 ,A — DIVISION SEMICONDUCTEURS ► 1 IM 6 0 7 2 ,A BIDIRECTIONAL TR A N S IE N T V O L T A G E S U P P R E S S O R S DIODES DE PROTECTION BIDIRECTIONNELLES


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    PDF GGG2b25 /8-20/isexpo 1NB071 1N6066 thomson lpp 68 g1 don connex 6064A 1N6036

    SMD 1N60

    Abstract: SMD 1N60 diode 6072a 1N56 1N60 diode SMD 6072A TUBE 1N6072 diode 1n60 sod6 package 1N60 MOS
    Text: rz j S G S -T H O M S O N ^ 7£ 1N 5634A /1N 5665A 1N 6040A /1N 6072A TRANSIL FEATURES • PEAK PULSE POWER= 1500 W @ 1ms. ■ BREAKDOWN VOLTAGE RANGE : From 11V to 200 V. ■ UNI AND BIDIRECTIONAL TYPES. ■ LOW CLAMPING FACTOR. ■ FAST RESPONSE TIME: Tclamping : 1ps 0 V to VBR .


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    PDF CB472. CB473. DIL20 T0220AB 7TBT237 SMD 1N60 SMD 1N60 diode 6072a 1N56 1N60 diode SMD 6072A TUBE 1N6072 diode 1n60 sod6 package 1N60 MOS

    Untitled

    Abstract: No abstract text available
    Text: im ia s T o t. . TransZorb QUICK REFERENCE GUIDE PROVIDING PROTECTION FOR :• • Telecommunications &:7S$ ' • Military ÌH • Computer • Industrial ■\. '’ • . .Test & Vyt. I\\ Instrumentation • Medical • Automotive A General Industriès, Inc.


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    PDF D3008R