1N3595
Abstract: diode 1N3595
Text: 1N3595 SILICON LOW LEAKAGE DIODE JEDEC DO-35 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 1N3595 is an epitaxial planar silicon diode designed for low leakage, high conductance applications. Higher breakdown voltage devices are available on special order. MAXIMUM RATINGS: TA=25°C
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1N3595
DO-35
1N3595
100mA
200mA
DO-35
C1N3595
diode 1N3595
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Untitled
Abstract: No abstract text available
Text: 1N3595 High Conductance Low Leakage Diode. Working Inverse Voltage 125 V. 2.53 D. Page 1 of 1 Enter Your Part # Home Part Number: 1N3595 Online Store 1N3595 Diodes High Conductance Low Leakage Diode. Working Inverse Transistors Voltage 125 V. Integrated Circuits
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1N3595
1N3595
DO-35
com/1n3595
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1N3595
Abstract: CMPD3003 CPD64
Text: PROCESS Central CPD64 Low Leakage Diode TM Semiconductor Corp. Low Leakage Diode Chip PROCESS DETAILS PROCESS EPITAXIAL PLANAR DIE SIZE DIE THICKNESS 17.5 x 17.5 MILS ANODE BONDING PAD AREA TOP SIDE METALIZATION 8.0 MILS DIAMETER BACK SIDE METALIZATION Au - 6,000Å
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CPD64
CMPD3003
1N3595
1N3595
CMPD3003
CPD64
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1N3595
Abstract: CMPD3003 CPD64
Text: PROCESS CPD64 Low Leakage Diode Low Leakage Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 17.5 x 17.5 MILS Die Thickness 8.0 MILS Anode Bonding Pad Area 8.0 MILS DIAMETER Top Side Metalization Al - 30,000Å Back Side Metalization Au - 6,000Å
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CPD64
CMPD3003
1N3595
25-August
1N3595
CMPD3003
CPD64
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1N3595
Abstract: CMPD3003 CPD64
Text: PROCESS CPD64 Low Leakage Diode Low Leakage Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 17.5 x 17.5 MILS Die Thickness 8.0 MILS Anode Bonding Pad Area 8.0 MILS DIAMETER Top Side Metalization Al - 30,000Å Back Side Metalization Au - 6,000Å
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CPD64
CMPD3003
1N3595
1N3595
CMPD3003
CPD64
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1N3595
Abstract: CMPD3003 CPD64
Text: PROCESS CPD64 Low Leakage Diode Low Leakage Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 17.5 x 17.5 MILS Die Thickness 8.0 MILS Anode Bonding Pad Area 8.0 MILS DIAMETER Top Side Metalization Al - 15,000Å Back Side Metalization Au-As - 13,000Å
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CPD64
CMPD3003
1N3595
22-March
1N3595
CMPD3003
CPD64
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1N3595
Abstract: CMPD3003 CPD64
Text: PROCESS CPD64 Central Low Leakage Diode TM Semiconductor Corp. Low Leakage Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 17.5 x 17.5 MILS Die Thickness 8.0 MILS Anode Bonding Pad Area 8.0 MILS DIAMETER Top Side Metalization Al - 30,000Å Back Side Metalization
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CPD64
CMPD3003
1N3595
CPD64ductor
1N3595
CMPD3003
CPD64
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LL3595
Abstract: 1N3595 1N3595-1 1N3595UR-1 DO-213AA
Text: Low Leakage Diode Applications 1N3595 DO-35 Glass Package Used in instrumentation applications, where low leakage and high voltage isolation are important. Features DO-35 Glass Package nominal dimensions Six sigma quality Metallurgically bonded glass 0.020"
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1N3595
DO-35
LL-34/35
Mil-S-19500/241
DO-213AA
LL3595)
1N3595UR-1)
1N3595
LL3595
1N3595-1
1N3595UR-1
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Untitled
Abstract: No abstract text available
Text: Low Leakage Diode Applications 1N3595 DO-35 Glass Package Used in instrumentation applications, where low leakage and high voltage isolation are important. Features DO-35 Glass Package nominal dimensions Six sigma quality Metallurgically bonded glass 0.020"
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1N3595
DO-35
LL-34/35
Mil-S-19500/241
DO-213AA
LL3595)
1N3595UR-1)
1N3595
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DO-35 PACKAGE
Abstract: Fairchild 1N3595 1n6099
Text: 1N3595/6099 DISCRETE POWER AND SIGNAL TECHNOLOGIES General Description: A General Purpose, Low Leakage Diode in the DO-35 package. These diodes couple very low reverse leakage current with high forward conduction and high reverse blocking voltage. High Conductance
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1N3595/6099
DO-35
11-MAR-97
DO-35 PACKAGE
Fairchild 1N3595
1n6099
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1N3595-1
Abstract: 1N3595-1 JANTX
Text: FEATURES 1N3595-1 • 1N3595-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF• • • • 19500/241 SWITCHING DIODE METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS AT 25 °C Operating Temperature: Storage Temperature:
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1N3595-1
1N3595-1
500mA
500mW
150mA,
PRF-19500/241
DO-35
1N3595-1 JANTX
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LL3595
Abstract: MIL-PRF-19500/241 1N3595UR-1 DO-213AA
Text: FEATURES 1N3595UR-1 • 1N3595UR-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF• • • • • 19500/241 SWITCHING DIODE METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION ALSO AVAILABLE AS LL3595, & MLL3595 MAXIMUM RATINGS AT 25 °C
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1N3595UR-1
1N3595UR-1
LL3595,
MLL3595
500mA
500mW
150mA,
PRF-19500/241
DO-213AA
LL3595
MIL-PRF-19500/241
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Untitled
Abstract: No abstract text available
Text: 1N3595 1N3595 DO-35 Color Band Denotes Cathode Small Signal Diode Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Value Units Maximum Repetitive Reverse Voltage 150 V IF AV Average Rectified Forward Current 200 mA IFSM Tstg Non-repetitive Peak Forward Surge Current
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1N3595
DO-35
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Germanium diode
Abstract: 5 amp diode rectifiers Germanium Diode OA91 aa117 diode diode 2 Amp rectifier diode 2 Amp zener diode DIODE 1N649 germanium rectifier diode OA95 diode
Text: Index f P art N Part Number Description 1N34A 1N38A 1N60A 1N100A Gold Gold Gold Gold 1N270 Gold Bonded Germ anium Diode Gold Bonded Germanium Diode Gold Bonded Germanium Diode Low Leakage Silicon Diodes Low Leakage Silicon Diodes Low Leakage Silicon Diodes
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1N34A
1N38A
1N60A
1N100A
1N270
1N276
1N277
1N456
1N459
1N456A
Germanium diode
5 amp diode rectifiers
Germanium Diode OA91
aa117 diode
diode
2 Amp rectifier diode
2 Amp zener diode
DIODE 1N649
germanium rectifier diode
OA95 diode
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Sprague 1N3600
Abstract: diode R 360 BL diode a13 TND907 diode arrays tnd903 A1090 sprague TND 16-pin a plastic package
Text: ÛS13ÛS0 SPRAGUE/SEM ICOND GROUP 8 5 1 4 0 1 9 S P RA GU E. S E M I C O N D S / ICS 0003Ö05 □ SERIES TND DIODE ARRAYS SERIES TND DIODE ARRAYS rT ,he TND series consists o f diode arrays packaged •*- in 14-pin and 16-pin dual in-line plastic pack ages for easy automatic insertion and better printed
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14-pin
16-pin
1N3070,
1N3595,
1N3600,
1N4153,
1N4447
TND933
TND940
TND938
Sprague 1N3600
diode R 360 BL
diode a13
TND907
diode arrays
tnd903
A1090
sprague TND 16-pin a plastic package
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MT1115
Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
Text: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir
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108th
MT1115
2N3303
FPT100 phototransistor
UA739 equivalent
transistor bc 554 pnp
mt1039
ft2974
fairchild 2N3565
FD6666 diode
transistor npn Epitaxial Silicon SST 117
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d918
Abstract: D938 TND903 TND907
Text: SERIES TND D IO D E ARRAYS The TND series consists of diode arrays packaged in 14-pin and 16-pin dual in-line plastic packages for easy automatic insertion and better printed circuit board density. In addition to the diode characteristics for standard products
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14-pin
16-pin
1N3070,
1N3595,
1N3600,
1N4153,
1N4447
d918
D938
TND903
TND907
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ND921
Abstract: br 903
Text: SERIES TND D IO D E ARRAYS The TND series consists of diode arrays packaged in 14-pin and 16-pin dual in-line plastic packages for easy autom atic insertion and better printed circuit board density. In addition to the diode characteristics for standard products
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14-pin
16-pin
1N3070,
1N3595,
1N3600,
1N4153,
1N4447
TND903
TND905
TND907
ND921
br 903
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FSA2501P
Abstract: FSA2501M FSA2500M FSA1410M MONOLITHIC DIODE ARRAYS FSA2501 MONOLITHIC DIODE ARRAYS fairchild 1n4307 1N3070 JANTX 1N4307 FA3310
Text: FAIRCHILD DIODES DIODES MATCHED DIODE ASSEMBLIES PLASTIC AND GLASS PACKAGES Number of Diodes Package Item VF Matching -55° C to +100° C Basic Diode ip Range AVp Specification mA mV 2 Moulded Pair (308) 2 Discrete Pair DO-7 or DO-35 4 Moulded Quad (310)
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DO-35
1n914
FA2310E
FA2310U
FA4310E
FA4310U
FA3310
1N3070
FA2320E
FSA2501P
FSA2501M
FSA2500M
FSA1410M
MONOLITHIC DIODE ARRAYS
FSA2501
MONOLITHIC DIODE ARRAYS fairchild 1n4307
1N3070 JANTX
1N4307
FA3310
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LL3595
Abstract: 1N3595-1 1N3595UR-1 DO-213AA 117W3 PIV125 BKC Semiconductors
Text: MINI-MELF-SMD Applications LL359S or 1N3595UR-1 Low Leakage Diode 1N3595UR-1 / LL3595 Used in instrumentation applications, where space, low;leakage and high ' voltage isolation are important LL-34/35 MINI-MELF SMD Package DO-213AA (nominal dimensions) #
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LL359S
1N3595UR-1
1N3595UR-1
LL3595
LL-34/35
DO-213AA)
t19500/241
4031-B
MIL-STD-750
LL3595
1N3595-1
DO-213AA
117W3
PIV125
BKC Semiconductors
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TND903
Abstract: TND907 TND908 1N4447 1N3070 1N3595 1N3800 1N4153 TND918 TND921
Text: I n te r n a tio n a l TND903 thru TND942 S e m ic o n d u c to r , I n c . DIODE ARRAYS — II 6\ - - The TND series of diode arrays are packaged in 14 and 16 pin d u al-in-line p la s tic packages fo r easy autom atic insertion and better
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TND903
TND942
TND903
TND907
TND908
TND918
TND921*
1N3070,
1N3595,
1N3800,
1N4447
1N3070
1N3595
1N3800
1N4153
TND921
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a33 smd diode
Abstract: smd diode a33 BKC Semiconductors smd a33 BKC diode do35 DSAIH0002559 LL3595 Bkc SMD
Text: Low Leakage Diode 1N3595 Applications I DO-35 Glass Package Used in instrumentation applications, where low leakage and high voltage isolation are important. DO-35 Glass Package Features • • • • • • nominal dimensions Six sigma quality Metallurgical^ bonded
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1N3595
LL-34/35
Mil-S-19500/24"
DO-35
MIL-STD-750
1N3595-1
DO-213AA
LL3595)
a33 smd diode
smd diode a33
BKC Semiconductors
smd a33
BKC diode do35
DSAIH0002559
LL3595
Bkc SMD
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IN3595
Abstract: 1N3595
Text: COMPUTER DIODE 1N3595=JAN- J A N T X & jantxv 1N3595 150 mA, S w itch in g ABSO LUTE MAXIMUM RATINGS, AT 25“C FEATURES Peak Reverse V o lta g e .125V Reverse Breakdown V o lt a g e .150V
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1N3595
150mAdc
500mA
83Vdc
125Vdc
79Vdc
92Vdc
30Vdc
50mAdc
74Vdc
IN3595
1N3595
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TND908
Abstract: tnd903
Text: DIODE ARRAYS T h e T N D se rie s c o n sists of diode arrays pa cka ge d in 14-pin and 16-pin dual in-line plastic p a ck a g e s for e a s y autom atic insertion and better printed circuit board density. In addition to the diod e c h aracteristics for standard products
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14-pin
16-pin
1N3070,
1N3595,
1N3600,
1N4153,
TND903
TND908
TND918
TND933
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