DIODE 1SS133
Abstract: 1SS133
Text: 1SS133 SMALL SIGNAL DIODE VOLTAGE: 90V CURRENT: 130mA FEATURE DO-34 Silicon Single Junction Diode Fast switching Diode MECHANICAL DATA Case: DO-34 Glass case Polarity: color band denotes cathode Mounting position: any Weight: approx . 0.12g Dimensions in inches and millimeters
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1SS133
130mA
DO-34
DO-34
100uA
100mA
to100KHZ
1-Jun-03
DIODE 1SS133
1SS133
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diode 1n4148
Abstract: 1N4148 75v 150mA diode DIODE 1N4148 characteristics thermal diode 1n4148
Text: 1N4148 SMALL SIGNAL DIODE VOLTAGE: 100V CURRENT: 150mA FEATURE DO-35 Silicon Single Junction Diode Fast switching Diode MECHANICAL DATA Case: DO-35 Glass case Polarity: color band denotes cathode Mounting position: any Weight: approx . 0.13g Dimensions in inches and millimeters
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1N4148
150mA
DO-35
DO-35
100uA
to100KHZ
1-Jul-03
diode 1n4148
1N4148 75v 150mA diode
DIODE 1N4148 characteristics
thermal diode 1n4148
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Zener Diode 3A
Abstract: No abstract text available
Text: RD2.0ES~RD39ES Zener diode Features 1. DO-34 Glass sealed package This diode can be inserted into a PC board with a shorter pitch（5mm） 2. Planar process 3. Vz applied E24 standard Applications Circuits for constant voltage, constant current, waveform clipper, surge absorber, etc.
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RD39ES
DO-34
1-Jun-2004
Zener Diode 3A
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Untitled
Abstract: No abstract text available
Text: LL101A/LL101B/LL101C Schottky Barrier Diode Features 1. Small surface mounting type. 2. High reliability. 3. Low reverse current and low forward voltage. 4. This diode is also available in the DO-35 case with type designation SD101A, B, C. Applications HF-Detector, protection circuit, small battery charger,
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LL101A/LL101B/LL101C
DO-35
SD101A,
LL101A
LL101B
LL101C
1-Jun-2004
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Untitled
Abstract: No abstract text available
Text: 1JUS.762B Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage762m @I(Z) (A) (Test Condition)100m Tolerance (%)5 P(D) Max. (W)1.5 Z(z) Max. (ê) Dyn. Imped.50Â Temp Coef pp/10k Maximum Operating Temp (øC)150’
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Voltage762m
pp/10k
StyleAxial-10
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Untitled
Abstract: No abstract text available
Text: 1JUS.730A Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage730m @I(Z) (A) (Test Condition)50m Tolerance (%)10 P(D) Max. (W)1.5 Z(z) Max. (ê) Dyn. Imped.1.0Â Temp Coef pp/10k Maximum Operating Temp (øC)150’
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Voltage730m
pp/10k
StyleAxial-10
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Untitled
Abstract: No abstract text available
Text: 1JUS.616B Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage616m @I(Z) (A) (Test Condition)5.0m Tolerance (%)5 P(D) Max. (W)1.5 Z(z) Max. (ê) Dyn. Imped.10Â Temp Coef pp/10k Maximum Operating Temp (øC)150’
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Voltage616m
pp/10k
StyleAxial-10
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Untitled
Abstract: No abstract text available
Text: 1JUS.730B Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage730m @I(Z) (A) (Test Condition)50m Tolerance (%)5ì P(D) Max. (W)1.5 Z(z) Max. (ê) Dyn. Imped.1.0Â Temp Coef pp/10k Maximum Operating Temp (øC)150’
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Voltage730m
pp/10k
StyleAxial-10
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Untitled
Abstract: No abstract text available
Text: 1JUS.762A Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage762m @I(Z) (A) (Test Condition)100m Tolerance (%)10 P(D) Max. (W)1.5 Z(z) Max. (ê) Dyn. Imped.50Â Temp Coef pp/10k Maximum Operating Temp (øC)150’
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Voltage762m
pp/10k
StyleAxial-10
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Untitled
Abstract: No abstract text available
Text: 1JUS.616A Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage616m @I(Z) (A) (Test Condition)5.0m Tolerance (%)10 P(D) Max. (W)1.5 Z(z) Max. (ê) Dyn. Imped.10Â Temp Coef pp/10k Maximum Operating Temp (øC)150’
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Voltage616m
pp/10k
StyleAxial-10
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Untitled
Abstract: No abstract text available
Text: Z Series Zener diode Features 1. Low leakage 2. High reliability Applications Voltage stabilization Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Power dissipation Test Conditions Type RthJA≦300K/W Junction temperature
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300K/W
1-Jun-2004
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Untitled
Abstract: No abstract text available
Text: LLZ Series Zener diode Features 1. Low leakage 2. High reliability Applications Voltage stabilization Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Power dissipation Test Conditions Type RthJA≦300K/W Junction temperature
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300K/W
1-Jun-2004
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Untitled
Abstract: No abstract text available
Text: ZJ Series Zener diode Features 1. Low leakage 2. High reliability Applications Voltage stabilization Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Power dissipation Test Conditions Type RthJA≦300K/W Junction temperature
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300K/W
1-Jun-2004
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Untitled
Abstract: No abstract text available
Text: 1SS244 High-voltage switching diode Features 1. Small surface mounting type 2. High reliability 3. VRM=250V Applications High voltage switch and general purpose rectification Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter
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1SS244
1-Jun-2004
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Untitled
Abstract: No abstract text available
Text: SD103A/SD103B/SD103C Schottky Barrier Diode Features 1. High reliability 2. Low reverse current and low forward voltage Applications Low current rectification and high speed switching Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃
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SD103A/SD103B/SD103C
SD103B
SD103C
SD103A
1-Jun-2004
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diode 1,5k
Abstract: diode 1fp
Text: _ PRELIMINARY DATA SHEET_ NEC / / LASER DIODE NDL7514P Series InGaAsP STRAINED MQW-DC-PBH PULSED LASER DIODE MODULE 1310nm OTDR APPLICATION DESCRIPTION NDL7514P Series are 1310nm newly developed Strained Multiple Quantum Well st-MQW structure pulsed laser diode
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NDL7514P
1310nm
400mA
NDL7514P1
400mA
1Fp-400mA,
10t/s
diode 1,5k
diode 1fp
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Pulsed Laser 1550nm
Abstract: No abstract text available
Text: , N E C / / _PRELIMINARY DATA SHEET_ LASER DIODE NDL7553P Series InGaAsP STRAINED MQW-DC-PBH PULSED LASER DIODE MODULE 1550nm OTDR APPLICATION DESCRIPTION NDL7553P Series are 1550nm newly developed Strained Multiple Quantum Well st-MQW structure pulsed laser diode
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NDL7553P
1550nm
145mW
1000mA
NDL7553P1
10//s,
1000mA
Pulsed Laser 1550nm
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PW10A
Abstract: No abstract text available
Text: NEC / ' PRELIMINARY DATA SHEET_ LASER DIODE NDL7513P Series InGaAsP STRAINED MQW-DC-PBH PULSED LASER DIODE MODULE 1310nm OTDR APPLICATION DESCRIPTION NDL7513P Series are 1310nm newly developed Strained Multiple Quantum Well st-MQW structure pulsed laser diodes
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NDL7513P
1310nm
110mW
400mA
NDL7513P1
P10470EJ1V0DS00
400mA
PW10A
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KDV154E
Abstract: No abstract text available
Text: KDV154E SEMICONDUCTOR VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TECHNICAL DATA TV VHF,UHF TUNER AFC VCO FOR UHF BAND RADIO. MAXIMUM RATINGS Ta=25°C SYMBOL RATING UNIT CHARACTERISTIC Reverse Voltage Vr 20 V Junction Temperature Tj 150 °c
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KDV154E
c2v/10v
470MHz
Ta-25Â
KDV154E
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Untitled
Abstract: No abstract text available
Text: HL6726MG Visible High Power Laser Diode HITACHI Description The HL6726MG is a 0.68pm band AlGalnP laser diode LD with a multi-quantum well (MQW) structure. It is suitable as a light source for large capacity optical disc memories and various other types
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HL6726MG
HL6726MG
695nm
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Untitled
Abstract: No abstract text available
Text: HL1326GN 1.3 jim InGaAsP Laser Diode HITACHI ADE-208-464 Z 1st. Edition November 1996 Description The HL1326GN is a 1.3 (Am InGaAsP Fabry-Perot laser diode with a multi-quantum well (MQW) structure. It is suitable as a light source in short and medium range fiberoptic communication
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HL1326GN
ADE-208-464
HL1326GN
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ESJA59-10
Abstract: ESJA59-14
Text: ESJA59 iokv, 1 k 2 V , 1 4 k V K Outline Drawings a s s a c » ' - f ^ - - K _ HIGH VOLTAGE SILICON DIODE ESJA59tt, ESJA59 is high reliability resin m olded type high voltage diode in small size package w h ich is sealed a m ultilayed mesa type silicon chip by epoxy resin.
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ESJA59
ESJA59tt,
ESJA59-10
ESJA59-12
ESJA59-14
I95t/R
ESJA59-10
ESJA59-14
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Untitled
Abstract: No abstract text available
Text: 2FI100G 2 xiooa " i i : Outline Drawings Y * i * n . —)V _ FAST RECOVERY DIODE MODULE 91*“ . «O'" 61R 176 b 0 G Ml - • . 11 ■ 4 # ^ : F eatures L' • t tt ta f lW ft* • 1-ft 1JU_ <Ì S hort Reverse Recovery Time Variety of Connection Menu
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2FI100G
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MA47221
Abstract: ma47222 MA47200 MA47220
Text: yflftçQH _ MA47200 Series Stripline PIN Diode Switch Modules Features • BROADBAND 50 OHM DESIGNS THROUGH X BAND ■ CIRCUIT CHARACTERIZED ■ HIGH POWER CAPABILITY ■ VOLTAGE RATINGS TO 1000 VOLTS
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MA47200
MA47221
ma47222
MA47220
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