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    HL1326GN Search Results

    HL1326GN Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    HL1326GN Hitachi Semiconductor GaAlAs Infrared Emitting Diodes Original PDF
    HL1326GN Hitachi Semiconductor Laser Diode, 5mW Power, 1340nm Wave Length, 8mA Current Original PDF

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    HL1326GN

    Abstract: No abstract text available
    Text: HL1326GN 1.3 µm InGaAsP Laser Diode Description The HL1326GN is a 1.3 µm InGaAsP Fabry-Perot laser diode with a multi-quantum well MQW structure. It is suitable as a light source in short and medium range fiberoptiic communication systems and other types of optical equipment. It has high optical power with


    Original     		PDF HL1326GN HL1326GN

    Hitachi DSA00270

    Abstract: Po-50mW Hitachi DSA002703 hitachi Laser Diode
    Text: HL1326GN 1.3 µm InGaAsP Laser Diode ADE-208-464 Z 1st. Edition November 1996 Description The HL1326GN is a 1.3 µm InGaAsP Fabry-Perot laser diode with a multi-quantum well (MQW) structure. It is suitable as a light source in short and medium range fiberoptic communication


    Original     		PDF HL1326GN ADE-208-464 HL1326GN D-85622 Hitachi DSA00270 Po-50mW Hitachi DSA002703 hitachi Laser Diode

    Untitled

    Abstract: No abstract text available
    Text: HL1326GN 1.3 jim InGaAsP Laser Diode HITACHI ADE-208-464 Z 1st. Edition November 1996 Description The HL1326GN is a 1.3 (Am InGaAsP Fabry-Perot laser diode with a multi-quantum well (MQW) structure. It is suitable as a light source in short and medium range fiberoptic communication


    OCR Scan     		PDF HL1326GN ADE-208-464 HL1326GN