IF110
Abstract: IXGA16N60C2D1 IXGH16N60C2D1 IXGP16N60C2D1
Text: Preliminary Technical Information VCES = IC110 = VCE sat ≤ tfi(typ) = IXGA16N60C2D1 IXGP16N60C2D1 IXGH16N60C2D1 HiPerFASTTM IGBTs C2-Class High Speed w/ Diode 600V 16A 3.0V 35ns TO-263 (IXGA) G Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C
|
Original
|
PDF
|
IC110
IXGA16N60C2D1
IXGP16N60C2D1
IXGH16N60C2D1
O-263
IF110
O-220
O-247
IF110
IXGA16N60C2D1
IXGH16N60C2D1
IXGP16N60C2D1
|
Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFH16N120P IXFT16N120P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 1200V = 16A ≤ 950mΩ Ω ≤ 300ns TO-247 (IXFH) Symbol Test Conditions Maximum Ratings
|
Original
|
PDF
|
IXFH16N120P
IXFT16N120P
300ns
O-247
25VDS
16N120P
|
IXFH16N120
Abstract: ixfh16n120p 16N120P 1200v to247 MOSFET
Text: IXFH16N120P IXFT16N120P PolarTM Power MOSFET HiPerFETTM VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 1200V = 16A ≤ 950mΩ Ω ≤ 300ns TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
|
Original
|
PDF
|
IXFH16N120P
IXFT16N120P
300ns
O-247
16N120P
4-03-08-A
IXFH16N120
ixfh16n120p
1200v to247 MOSFET
|
IXFH16N120
Abstract: No abstract text available
Text: VDSS ID25 IXFH16N120P IXFT16N120P PolarTM Power MOSFET HiPerFETTM RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 1200V = 16A ≤ 950mΩ Ω ≤ 300ns TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
|
Original
|
PDF
|
IXFH16N120P
IXFT16N120P
300ns
O-247
16N120P
4-03-08-A
IXFH16N120
|
Untitled
Abstract: No abstract text available
Text: IXSH 16N60U1 VCES = 600V = 16A IC25 VCE sat typ = 1.8V Low VCE(sat) IGBT with Diode Short Circuit SOA Capability Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous
|
Original
|
PDF
|
16N60U1
O-247
|
Untitled
Abstract: No abstract text available
Text: IXSH 16N60U1 VCES = 600V = 16A IC25 VCE sat typ = 1.8V Low VCE(sat) IGBT with Diode Short Circuit SOA Capability Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous
|
Original
|
PDF
|
16N60U1
|
Untitled
Abstract: No abstract text available
Text: HiPerFASTTM IGBTs B2-Class High Speed w/ Diode VCES = IC110 = VCE sat ≤ tfi(typ) = IXGA16N60B2D1 IXGP16N60B2D1 IXGH16N60B2D1 600V 16A 2.3V 70ns TO-263 AA (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ
|
Original
|
PDF
|
IC110
IXGA16N60B2D1
IXGP16N60B2D1
IXGH16N60B2D1
O-263
IF110
16N60B3D1
|
Untitled
Abstract: No abstract text available
Text: HiPerFASTTM IGBTs C2-Class High Speed w/ Diode VCES = IC110 = VCE sat ≤ tfi(typ) = IXGA16N60C2D1 IXGP16N60C2D1 IXGH16N60C2D1 600V 16A 3.0V 33ns TO-263 AA (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ
|
Original
|
PDF
|
IC110
IXGA16N60C2D1
IXGP16N60C2D1
IXGH16N60C2D1
O-263
IF110
16N60C3D1
|
IXGH16N60C2D1
Abstract: IXGP16N60C2D1 16N60C3 IF110 IXGA16N60C2D1
Text: HiPerFASTTM IGBTs C2-Class High Speed w/ Diode VCES = IC110 = VCE sat ≤ tfi(typ) = IXGA16N60C2D1 IXGP16N60C2D1 IXGH16N60C2D1 600V 16A 3.0V 33ns TO-263 AA (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ
|
Original
|
PDF
|
IC110
IXGA16N60C2D1
IXGP16N60C2D1
IXGH16N60C2D1
O-263
IF110
16N60C3D1
IXGH16N60C2D1
IXGP16N60C2D1
16N60C3
IF110
IXGA16N60C2D1
|
IXGH16N60B2D1
Abstract: IXGP16N60B2D1
Text: HiPerFASTTM IGBTs B2-Class High Speed w/ Diode VCES = IC110 = VCE sat ≤ tfi(typ) = IXGA16N60B2D1 IXGP16N60B2D1 IXGH16N60B2D1 600V 16A 1.95V 70ns TO-263 AA (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ
|
Original
|
PDF
|
IC110
IXGA16N60B2D1
IXGP16N60B2D1
IXGH16N60B2D1
O-263
IF110
16N60B2D1
IXGH16N60B2D1
IXGP16N60B2D1
|
IXGH16N60B2
Abstract: 16N60 IXGH16N60B2D1 C3519 16N60B IF110 IXGA16N60B2D1 IXGP16N60B2D1
Text: HiPerFASTTM IGBTs B2-Class High Speed w/ Diode VCES = IC110 = VCE sat ≤ tfi(typ) = IXGA16N60B2D1 IXGP16N60B2D1 IXGH16N60B2D1 600V 16A 2.3V 70ns TO-263 AA (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ
|
Original
|
PDF
|
IC110
IXGA16N60B2D1
IXGP16N60B2D1
IXGH16N60B2D1
O-263
IF110
16N60B3D1
IXGH16N60B2
16N60
IXGH16N60B2D1
C3519
16N60B
IF110
IXGA16N60B2D1
IXGP16N60B2D1
|
IXFH16N120P
Abstract: No abstract text available
Text: IXFT16N120P IXFH16N120P PolarTM HiPerFETTM Power MOSFETs VDSS ID25 = 1200V = 16A ≤ 950mΩ Ω ≤ 300ns RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-268 (IXFT) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
|
Original
|
PDF
|
IXFT16N120P
IXFH16N120P
300ns
O-268
O-247
16N120P
09-12-12-B
IXFH16N120P
|
APT15F60B
Abstract: APT15F60S MIC4452
Text: APT15F60B APT15F60S 600V, 16A, 0.43Ω Max, Trr ≤ 190nS N-Channel FREDFET POWER MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced
|
Original
|
PDF
|
APT15F60B
APT15F60S
190nS
APT-8172
APT15F60B
APT15F60S
MIC4452
|
zvs flyback driver
Abstract: APT15F60B APT15F60S MIC4452
Text: APT15F60B APT15F60S 600V, 16A, 0.43Ω Max, Trr ≤ 190nS N-Channel FREDFET POWER MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced
|
Original
|
PDF
|
APT15F60B
APT15F60S
190nS
APT-8172
zvs flyback driver
APT15F60B
APT15F60S
MIC4452
|
|
|
Untitled
Abstract: No abstract text available
Text: APT15F60B APT15F60S 600V, 16A, 0.43Ω Max, Trr ≤ 190nS N-Channel FREDFET TO POWER MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced
|
Original
|
PDF
|
APT15F60B
APT15F60S
190nS
|
transistor c373
Abstract: c380 transistor transistor c375 transistor c380 o transistor c380 AN-994 IRGBC30MD2-S SMD-220 C380 ge Tx/c380 transistor
Text: PD - 9.1143 IRGBC30MD2-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated Fast CoPack IGBT C Features VCES = 600V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses
|
Original
|
PDF
|
IRGBC30MD2-S
10kHz)
SMD-220
C-380
transistor c373
c380 transistor
transistor c375
transistor c380 o
transistor c380
AN-994
IRGBC30MD2-S
SMD-220
C380 ge
Tx/c380 transistor
|
transistor c373
Abstract: c380 transistor transistor c375 transistor c380 transistor c380 o AN-994 IRGBC30MD2-S SMD-220 transistor c374 C374
Text: Previous Datasheet Index Next Data Sheet PD - 9.1143 IRGBC30MD2-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated Fast CoPack IGBT C Features VCES = 600V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses
|
Original
|
PDF
|
IRGBC30MD2-S
10kHz)
SMD-220
C-380
transistor c373
c380 transistor
transistor c375
transistor c380
transistor c380 o
AN-994
IRGBC30MD2-S
SMD-220
transistor c374
C374
|
Untitled
Abstract: No abstract text available
Text: bSE D INTERNATIONAL RECTIFIER • MÖ55452 DG177SS flôl ■ INR PD-2.342 International B Rectifier HEXFRED Provisional Data Sheet HFA16TA60C u l t r a f a s t , s o f t RECOVERY DIODE 600V, 16A Major Ratings and Characteristics per Leg Characteristics
|
OCR Scan
|
PDF
|
DG177SS
HFA16TA60C
D-6380
|
Untitled
Abstract: No abstract text available
Text: Super Fast Recovery Diode Single Diode mmttîim S16L60 o u t lin e dim ensions 600V 16A •S B Œ • t r r 100ns • e jc t f 'J 'S O i •P F C •S R S S 0 7 U - n ~ ^ J l y 0m m . OA. f a Mfctèm RATINGS Absolute Maximum Ratings m Operating Junction Temperature
|
OCR Scan
|
PDF
|
S16L60
100ns
50HzjE
50HzJE5Â
|
Untitled
Abstract: No abstract text available
Text: □ - □ 7 sr-rsr—K Super Fast Recovery Diode Single Diode • W F2\f-> iia O U T L IN E D IM E N S IO N S S16L60 600V 16A ■ R A TIN G S Absolute Maximum Ratings s m Item Symbol O perating J u n c tio n Tem perature -ttA 3 M 5 £ W ± Maximum R everse Voltage
|
OCR Scan
|
PDF
|
S16L60
|
16AL
Abstract: SHINDENGEN DIODE
Text: n -n z tf'ft- K $M*5U Super Fast Recovery Diode Single Diode O U T L IN E D IM E N S IO N S S16L60 Case : MTO-3P 600V 16A -D : •S H E # tr rl 00ns • ejcö'/JviU m» •P F C •SFWÜÜ •*a , © n OA, FA , R A T IN G S Absolute Maximum Ratings m ft
|
OCR Scan
|
PDF
|
S16L60
50HziKttS.
16AL
SHINDENGEN DIODE
|
Untitled
Abstract: No abstract text available
Text: □ IXYS IXSH 16N60U1 Low VCE sat „, „ IGBT with Diode V CES I C25 V CE(sat)typ Short Circuit SOA Capability 600V 16A 1.8V Preliminary data sheet Maximum Ratings Symbol TestConditions V CES Tj = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 M£i
|
OCR Scan
|
PDF
|
16N60U1
|
Untitled
Abstract: No abstract text available
Text: n - n x V 'C X - Y Super Fast Recovery Diode Single Diode O U T L IN E D IM E N S IO N S S16L60 600V 16A •h iîjï • t r r 100ns • ejcô'/JvïïU m m •P F C •S R S ÎÜ •^ B s O A .F A R A TIN G S Absolute Maximum Ratings a Item a Operating Junction Temperature
|
OCR Scan
|
PDF
|
S16L60
100ns
J515-5
|
920vc
Abstract: No abstract text available
Text: n ix Y S L O w V C B M IG IXSH 16N60U1 VCES B T with Diode 600V 16A 1.8V IC25 v Short Circuit SOA Capability CE sat typ Preliminary data sheet Symbol Test Conditions VCES Tj =25°Cto150°C 600 V v CGR Tj = 25° C to 150° C; R G6 = 1 MO 600 V v GES Continuous
|
OCR Scan
|
PDF
|
16N60U1
Cto150
O-247
920vc
|
