Untitled
Abstract: No abstract text available
Text: JULY 1996 GP200MHB12S ADVANCE ENGINEERING DATA DS4339-4.2 GP200MHB12S POWERLINE N-CHANNEL IGBT MODULE APPLICATIONS TYPICAL KEY PARAMETERS 1200V VCES 2.8V VCE sat 200A IC(CONT) 400A IC(PK) 190ns tr 840ns tf • High Power Switching. ■ Motor Control. ■ UPS.
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GP200MHB12S
DS4339-4
190ns
840ns
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Untitled
Abstract: No abstract text available
Text: JULY 1996 GP1600FSS12S ADVANCE ENGINEERING DATA DS4337-4.2 GP1600FSS12S POWERLINE N-CHANNEL IGBT MODULE APPLICATIONS TYPICAL KEY PARAMETERS 1200V VCES 2.8V VCE sat 1600A IC(CONT) 3200A IC(PK) 190ns tr 840ns tf • High Power Switching. ■ Motor Control.
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GP1600FSS12S
DS4337-4
190ns
840ns
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Untitled
Abstract: No abstract text available
Text: APT15F60B APT15F60S 600V, 16A, 0.43Ω Max, Trr ≤ 190nS N-Channel FREDFET POWER MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced
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APT15F60B
APT15F60S
190nS
APT15F60B
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APT15F60B
Abstract: APT15F60S MIC4452
Text: APT15F60B APT15F60S 600V, 16A, 0.43Ω Max, Trr ≤ 190nS N-Channel FREDFET POWER MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced
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APT15F60B
APT15F60S
190nS
APT-8172
APT15F60B
APT15F60S
MIC4452
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Untitled
Abstract: No abstract text available
Text: JULY 1996 GP1200FSS12S ADVANCE ENGINEERING DATA DS4547-1.2 GP1200FSS12S POWERLINE N-CHANNEL IGBT MODULE APPLICATIONS TYPICAL KEY PARAMETERS 1200V VCES 2.8V VCE sat 1200A IC(CONT) 2400A IC(PK) 190ns tr 840ns tf • High Power Switching. ■ Motor Control.
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GP1200FSS12S
DS4547-1
190ns
840ns
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zvs flyback driver
Abstract: APT15F60B APT15F60S MIC4452
Text: APT15F60B APT15F60S 600V, 16A, 0.43Ω Max, Trr ≤ 190nS N-Channel FREDFET POWER MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced
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APT15F60B
APT15F60S
190nS
APT-8172
zvs flyback driver
APT15F60B
APT15F60S
MIC4452
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Untitled
Abstract: No abstract text available
Text: APT15F60B APT15F60S 600V, 16A, 0.43Ω Max, Trr ≤ 190nS N-Channel FREDFET TO POWER MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced
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APT15F60B
APT15F60S
190nS
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Untitled
Abstract: No abstract text available
Text: JULY 1996 GP400LSS12S ADVANCE ENGINEERING DATA DS4137-6.2 GP400LSS12S POWERLINE N-CHANNEL IGBT MODULE APPLICATIONS TYPICAL KEY PARAMETERS 1200V VCES 2.8V VCE sat 400A IC(CONT) 800A IC(PK) 190ns tr 840ns tf • High Power Switching. ■ Motor Control. ■ UPS.
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GP400LSS12S
DS4137-6
190ns
840ns
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2PG001
Abstract: Panasonic IGBT TO220 2PG002 2PG003
Text: Fast switching 150 ns and low VCE(sat) (2.4 V) PDP Drive IGBT Devices: 2PG00X Series Overview The 2PG00X series are PDP drive IGBT devices that respond to the needs for fast switching and low loss characteristics associated with the increasing image quality and lower power of PDP displays. These
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2PG00X
2PG001ã
2PG002/2PG003ã
150ns
2PG002ã
190ns
2PG001
Panasonic IGBT TO220
2PG002
2PG003
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IRZ 40
Abstract: ISL8107 ISL8107IRZ ISL8107IRZ-T MO-220 TB347 TB379
Text: ISL8107 Data Sheet October 29, 2008 Single-Phase Pulse-Width Modulation PWM Controller with Integrated High-Side Gate Drivers The ISL8107 is a single phase, non-synchronous buck controller with an integrated high-side MOSFET driver. The controller operates from 9V to 75V input voltage range. The
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ISL8107
ISL8107
100kHz
600kHz
5m-1994.
FN6605
IRZ 40
ISL8107IRZ
ISL8107IRZ-T
MO-220
TB347
TB379
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KM658128
Abstract: No abstract text available
Text: m s« KM658128 SAMSUNG Semiconductor 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM May 1991 FEATURES DESCRIPTION • Fast Access Time: — CE Access Tim e. 80, 100, 120ns Max — Cycle Time Random Read/Write Cycle Time .130, 160, 190ns (Max)
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KM658128
120ns
190ns
KM658128
576-bit
200mW
5K/1-91
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PLESSEY CLA
Abstract: No abstract text available
Text: GEC PLESSEY S i S E M I C O N D U C T O R S DS4338-4.2 GP800DHB12S POWERLINE N-CHANNELIGBT MODULE APPLICATIONS TYPICAL KEY PARAMETERS 1200V ^CES 2.8V 800A l«COMT 1600A ^C PK) 190ns tr 840ns • High Power Switching. ■ Motor Control. ■ UPS. ■ AC And DC Servo Drive Amplifiers.
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DS4338-4
GP800DHB12S
190ns
840ns
44lbs
70lbs
88lbs
18lbs
1500g
PLESSEY CLA
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Untitled
Abstract: No abstract text available
Text: GP1600FSS12S M ITEL Powerline N-Channel IGBT Module SEMICONDUCTOR Advance Inform ation Supersedes July 1996 version, DS4337 - 4.2 DS4337 - 4.3 March 1998 TYPICAL KEY PARAMETERS 1200V CES 2.8V ^CE sat 1600A C(CONT) 3200A C(PK) 190ns 840ns APPLICATIONS •
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GP1600FSS12S
DS4337
190ns
840ns
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AM9064-15
Abstract: AM9064-15PC am9064 AM9064-10 R/Detector/"Detector IC"/"CD"/Am2964B/Am9064-15
Text: Am9064 65,536 x 1 Dynamic RAM DISTINCTIVE CHARACTERISTICS High speed RAS access of 100 and 120ns Single +5V ±10% power supply Low power 22mW standby - 330mW active — 220ns cycle time - 385mW active — 190ns cycle time Read, Write, Read-Modify-Write, Page-Mode and RASOnly refresh capability
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Am9064
120ns
330mW
220ns
385mW
190ns
220ns
Am9064
03759B
AM9064-15
AM9064-15PC
AM9064-10
R/Detector/"Detector IC"/"CD"/Am2964B/Am9064-15
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GP1200FSS12S
Abstract: No abstract text available
Text: GP1200FSS12S M ITEL Powerline N-Channel IGBT Module SEMICONDUCTOR Advance Inform ation Supersedes July 1996 version, DS4547 -1 .2 DS4547 -1 .3 TYPICAL KEY PARAMETERS 1200V CES 2.8V ^CE sat 1200A C(CONT) 2400A C(PK) 190ns 840ns APPLICATIONS • High Power Switching.
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GP1200FSS12S
DS4547
190ns
840ns
GP1200FSS12S
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514000
Abstract: No abstract text available
Text: SIEMENS PRELIMINARY DATA SHEET, 11/88 HYB 514000-80/10 41 9 4 3 0 4 Bit Dynamic RAM 4194304 words by 1 bit orgânizâtion Fast access and cycle time 80ns access time 160ns cycle time HYB 514000-80 100ns access time 190ns cycle tim e (HYB 514000-10) Fast page m ode cycle time
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160ns
100ns
190ns
413mW
330mW
26/20-pin
350mil)
514000
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KM41C1001
Abstract: A953
Text: ^ —— SAMSUNG SEM ICO NDUCTOR INC Ifl — i* s PRELIMINARY SPECIFICATION CMOS DRAM KM41C1001 1 Mx 1 Bit Dynamic RAM with Nibble Mode GENERAL DESCRIPTION FEATURES • Performance range: tu e tcAC ♦ rc KM41C1001-10 100ns 25ns 190ns KM41C1001-12 120ns 30ns
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KM41C1001
KM41C1001
576x1
KM41C1001P
KM41C1001J
KM41C1001Z
A953
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Untitled
Abstract: No abstract text available
Text: Si G E C P L E S S E Y S E M I C O N D U C T O R S DS4547-1.2 GP1200FSS12S POWERLINE N-CHANNELIGBT MODULE TYPICAL KEY PARAMETERS VCES 1200V 2.8V CE sai APPLICATIONS • High Power Switching. ■ Motor Control. 1200A ^C(COhfT) ■ UPS. 2400A 190ns 840ns C(PK)
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DS4547-1
GP1200FSS12S
190ns
840ns
44lbs
70lbs
88lbs
18lbs
1500g
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2SK1262
Abstract: 2SK12
Text: P o w er F-MOS FET 2SK 1262 2SK 1262 Silicon N-channel Power F-M O S FET • Package Dim ensions ■ Features • Low ON resistance R d s on : R Us (on) l = 0.048fl (typ.) • High switching ra te : tf = 190ns (typ.) Unit: mm • No secondary breakdow n
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2SK1262
048fl
190ns
2SK1262
2SK12
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514000
Abstract: 350mil
Text: SIEMENS PRELIMINARY DATA SHEET, 11/88 HYB 514000-80/10 41 9 4 3 0 4 Bit Dynamic RAM 4 1 9 4 3 0 4 w o rd s by 1 bit o r g a n iz a tio n Fast access a n d cycle tim e 80ns access tim e 160ns cycle t im e HYB 5 1 4 0 0 0 -8 0 100ns access t im e 190ns cycle ttm e (HYB 5 1 4 0 0 0 -1 0 )
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160ns
100ns
190ns
413mW
330mW
26/20-pin
350mil)
514000
350mil
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KM41C1000
Abstract: KM41C1000P km41c1000 B 1mx1 DRAM DIP
Text: SAMSUNG SEMICONDUCTOR INC T f i D Ë J 7 T t.4 1 4 E 0 0 0 5 4 ^ 3 7 - y £ - '. CMOS DRAM KM41C1000 1Mx1 Bit Dynamic RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • Performance range: tRAC tcAC tRC KM41C1000-10 100ns 25ns 190ns KM41C1000-12 120ns
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KM41C1000
KM41C1000-10
KM41C1000-12
100ns
120ns
190ns
220ns
KM41C1000
576x1
KM41C1000P
km41c1000 B
1mx1 DRAM DIP
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TC51832FL10
Abstract: TC51832 TC51832FL-10 TC51832PL-10 256IC 832P
Text: 832P/S 832 P/S 832P/S 32,768 WORD x 3 BIT CMOS PSEUDO STATIC RAM IDESCRIPTION] The TC51832 Family is a 256IC bit high-speed CMOS Pseudo-Static RAM organized as 32,768 words by 8 bits. The TC51832 Family utilizes one transistor dynamic memory cell array with
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832P/S
832P/S
TC51832
256IC
TC51832P
plastic/SP/F/PL/SPL/FL-12
DIP28-P-300)
TC51832FL10
TC51832FL-10
TC51832PL-10
832P
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MOS MEMORY PRODUCTS THM 81002S/L-85, 10 , 12 description! The T K M 8 1 0 0 2 S / L is a 1,048,576 w o r d s b y 8 b i t s pcs of TC511 0 0 2 J on the p r i nted c i rcuit board. The T H M 8 1 0 0 2 S / L is o p t i m i z e d for a p p l i c a t i o n to
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81002S/L-85,
TC511
TIIM81002S/L-12
100ns
120ns
THM81
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TC518129
Abstract: de interlace
Text: TOSHIBA TC518129AP/ASP/AF/AFW-80/10/12 TC518129APL/ASPL/AFL/AFWL30/10/12 TC518129AFTLS0/10/12 SILICON GATE CMOS 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The T C 5 1 8 1 2 9 A is a 1M bit high speed C M O S p se udo static R AM organized as 131,07 2 w o rd s by 8 bits. The TC 5 18 1 29A utilizes
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TC518129AP/ASP/AF/AFW-80/10/12
TC518129APL/ASPL/AFL/AFWL30/10/12
TC518129AFTLS0/10/12
TC518129APL/ASPL/AFL/AFWL/AFTL-80/10/12
AO-A16
TC518129
de interlace
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