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    DIODE 12A3 Search Results

    DIODE 12A3 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
    CUZ16V Toshiba Electronic Devices & Storage Corporation Zener Diode, 16 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    DIODE 12A3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MID100-12A3 IGBT NPT Module VCES = 1200 V I C25 = 135 A VCE(sat) = 2.2 V Boost Chopper + free wheeling Diode Part number MID100-12A3 Backside: isolated 1 3 4 5 2 Features / Advantages: Applications: Package: Y4 ● NPT IGBT technology ● low saturation voltage


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    PDF MID100-12A3 60747and 20131206a

    Untitled

    Abstract: No abstract text available
    Text: MID75-12A3 IGBT NPT Module VCES = 1200 V I C25 = 90 A VCE(sat) = 2.2 V Boost Chopper + free wheeling Diode Part number MID75-12A3 Backside: isolated 1 3 4 5 2 Features / Advantages: Applications: Package: Y4 ● NPT IGBT technology ● low saturation voltage


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    PDF MID75-12A3 60747and 20131206a

    diode 12A3

    Abstract: No abstract text available
    Text: MDI145-12A3 IGBT NPT Module VCES = 1200 V I C25 = 160 A VCE(sat) = 2.2 V Buck Chopper + free wheeling Diode Part number MDI145-12A3 Backside: isolated 1 7 6 3 2 Features / Advantages: Applications: Package: Y4 ● NPT IGBT technology ● low saturation voltage


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    PDF MDI145-12A3 60747and 20131206a diode 12A3

    Untitled

    Abstract: No abstract text available
    Text: MDI75-12A3 IGBT NPT Module VCES = 1200 V I C25 = 90 A VCE(sat) = 2.2 V Buck Chopper + free wheeling Diode Part number MDI75-12A3 Backside: isolated 1 7 6 3 2 Features / Advantages: Applications: Package: Y4 ● NPT IGBT technology ● low saturation voltage


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    PDF MDI75-12A3 60747and 20131206a

    diode 12A3

    Abstract: No abstract text available
    Text: MDI100-12A3 IGBT NPT Module VCES = 1200 V I C25 = 135 A VCE(sat) = 2.2 V Buck Chopper + free wheeling Diode Part number MDI100-12A3 Backside: isolated 1 7 6 3 2 Features / Advantages: Applications: Package: Y4 ● NPT IGBT technology ● low saturation voltage


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    PDF MDI100-12A3 60747and 20131206a diode 12A3

    diode 12A3

    Abstract: No abstract text available
    Text: MID145-12A3 IGBT NPT Module VCES = 1200 V I C25 = 160 A VCE(sat) = 2.2 V Boost Chopper + free wheeling Diode Part number MID145-12A3 Backside: isolated 1 3 4 5 2 Features / Advantages: Applications: Package: Y4 ● NPT IGBT technology ● low saturation voltage


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    PDF MID145-12A3 60747and 20131206a diode 12A3

    diode b3

    Abstract: MII 75-12 A3 resistor catalog 30-12A6 grease diode 12A3 B3-12 75-12A3 200-12A4 10-06A6
    Text: IGBT Modules B3 1999 IXYS All rights reserved B3 - 1 IGBT Modules Contents Package style VCES IC VCE sat Type Page TC = 25° C TC = 25° C max. V A V 1200 35 3.0 MWI 35-12A5 B3- 4 50 3.0 MWI 50-12A5 B3- 8 75 3.0 MWI 75-12A5 B3-12 75 3.0 MII 75-12A3 MID 75-12A3


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    PDF 35-12A5 50-12A5 75-12A5 B3-12 75-12A3 75-12A3 B3-16 100-12A3 diode b3 MII 75-12 A3 resistor catalog 30-12A6 grease diode 12A3 B3-12 200-12A4 10-06A6

    MII100

    Abstract: No abstract text available
    Text: MII100-12A3 IGBT NPT Module VCES = 2x 1200 V I C25 = 135 A VCE(sat) = 2.2 V Phase leg Part number MII100-12A3 Backside: isolated 1 7 6 3 4 5 2 Features / Advantages: Applications: Package: Y4 ● NPT IGBT technology ● low saturation voltage ● low switching losses


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    PDF MII100-12A3 60747and 20131206a MII100

    MII75-12A3

    Abstract: No abstract text available
    Text: MII75-12A3 IGBT NPT Module VCES = 2x 1200 V I C25 = 90 A VCE(sat) = 2.2 V Phase leg Part number MII75-12A3 Backside: isolated 1 7 6 3 4 5 2 Features / Advantages: Applications: Package: Y4 ● NPT IGBT technology ● low saturation voltage ● low switching losses


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    PDF MII75-12A3 60747and 20131206a MII75-12A3

    MII145-12A3

    Abstract: No abstract text available
    Text: MII145-12A3 IGBT NPT Module VCES = 2x 1200 V I C25 = 160 A VCE(sat) = 2.2 V Phase leg Part number MII145-12A3 Backside: isolated 1 7 6 3 4 5 2 Features / Advantages: Applications: Package: Y4 ● NPT IGBT technology ● low saturation voltage ● low switching losses


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    PDF MII145-12A3 60747and 20131206a MII145-12A3

    diode 6a6

    Abstract: 6A6 DIODE RJ48 BTS 132 SMD NTH069A3 rj48 to db9 smd 5b1 smd transistor 6c5 2D4 SMD DS10
    Text: DS26503DK T1/E1/J1 BITS Element Design Kit www.maxim-ic.com GENERAL DESCRIPTION FEATURES The DS26503DK is an easy-to-use evaluation board for the DS26503 T1/E1/J1 BITS element. The DS26503DK is intended to be used as a stand-alone design kit. The board is complete with a DS26503


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    PDF DS26503DK DS26503DK DS26503 DS26503 MMC2107 CY62128V XC2S50 MAX1792 diode 6a6 6A6 DIODE RJ48 BTS 132 SMD NTH069A3 rj48 to db9 smd 5b1 smd transistor 6c5 2D4 SMD DS10

    smd transistor 6c5

    Abstract: 6A6 DIODE XCF01SV020C smd transistor 8a7 Transistor 6C5 5b1 smd transistor diode 6a6 C65 004 RJ48 smd 5b1
    Text: DS26503DK T1/E1/J1 BITS Element Design Kit www.maxim-ic.com GENERAL DESCRIPTION FEATURES The DS26503DK is an easy-to-use evaluation board for the DS26503 T1/E1/J1 BITS element. The DS26503DK is intended to be used as a stand-alone design kit. The board is complete with a DS26503


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    PDF DS26503DK DS26503DK DS26503 DS26503 MMC2107 CY62128V XC2S50 MAX1792 smd transistor 6c5 6A6 DIODE XCF01SV020C smd transistor 8a7 Transistor 6C5 5b1 smd transistor diode 6a6 C65 004 RJ48 smd 5b1

    6A6 DIODE

    Abstract: RJ48 DS26504 diode 6a6 smd 5c2 12D3 C65 004 EB1100 smd 5b1 smd transistor 6c5
    Text: DS26504DK T1/E1/J1/64K/8KCC BITS Element Design Kit www.maxim-ic.com GENERAL DESCRIPTION FEATURES The DS26504DK is an easy-to-use evaluation board for the DS26504 T1/E1/J1/64K/8KCC BITS element. The DS26504DK is intended to be used as a standalone design kit. The board is complete with a


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    PDF DS26504DK T1/E1/J1/64K/8KCC DS26504DK DS26504 MMC2107 CY62128V 6A6 DIODE RJ48 diode 6a6 smd 5c2 12D3 C65 004 EB1100 smd 5b1 smd transistor 6c5

    XCF01SV020

    Abstract: 6A6 DIODE 12b3 diode saronix 88 xtal osc 08 6B5 diode C65 004 6c5 g 6C5 smd diode 6a6 0805 led bicolor
    Text: DS26502DK T1/E1/J1/64KCC Bits Element Design Kit www.maxim-ic.com GENERAL DESCRIPTION FEATURES The DS26502DK is an easy-to-use evaluation board for the DS26502 T1/E1/J1/64KCC BITS element. The DS26502DK is intended to be used as a standalone design kit. The board is complete with a


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    PDF DS26502DK T1/E1/J1/64KCC DS26502DK DS26502 MMC2107 CY62128V XCF01SV020 6A6 DIODE 12b3 diode saronix 88 xtal osc 08 6B5 diode C65 004 6c5 g 6C5 smd diode 6a6 0805 led bicolor

    c6073

    Abstract: C6074 C6091 C6089 1CA033 ar9103 SIL1178 NEC C3568 c6092 U2390
    Text: 6 7 REV STD D CSA 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM


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    PDF RP6152 RP6158 RP6159 RP6707 RP6708 RP6709 RP6710 RP6720 RP6721 RP6722 c6073 C6074 C6091 C6089 1CA033 ar9103 SIL1178 NEC C3568 c6092 U2390

    C6073

    Abstract: SIL1178 c6074 C9013 NEC C3568 c4793 c5885 K769 C6090 15B1 zener diode
    Text: 8 6 7 REV STD D PDF CSA 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM


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    PDF RP1150 RP1151 RP2450 RP3510 RP3511 RP3512 RP3513 RP3514 RP3990 RP4800 C6073 SIL1178 c6074 C9013 NEC C3568 c4793 c5885 K769 C6090 15B1 zener diode

    MEC1308-NU

    Abstract: ASM1442 R5538 RTL8103 32 inch TV samsung lcd Schematic slb9635 SMD DIODE AA45 data sc472 SC454 BA41-01
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents D Stanford_14/15 C CPU : Chip Set :


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    PDF BA41-01119A BA41-01120A SHORT505 SHORT506 SHORT507 AO4435L 33-C2 41-B3 41-C4 RHU002N06 MEC1308-NU ASM1442 R5538 RTL8103 32 inch TV samsung lcd Schematic slb9635 SMD DIODE AA45 data sc472 SC454 BA41-01

    7512a3

    Abstract: 10012A3 200-12A4 100-12A3 550-12A4 145-12A3 75-12A3
    Text: N P TIG B T Modules i • High Short Circuit SOA Capability I 1 ■ —II- I I MDI I VCES Type ■c ^CE *at Tc = 25°C A Tc = 80°C A V 37 52 73 25 38 50 80 ► Mil 100-12A3 ► MID 100-12A3 ► MDI 100-12A3 Package style Eon® typ. 125°C mJ Eoff ^thJC


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    PDF 150-C I35-12A MWI50-12AS MWI75-12AS 75-12A3 100-12A3 7512a3 10012A3 200-12A4 100-12A3 550-12A4 145-12A3 75-12A3

    diode 12A3

    Abstract: No abstract text available
    Text: Insulated Gate Bipolar Transistors IGBT The IGBT is a combination of bipolar and MOS technologies. The best features of bipolar transistors are merged with the voltagecontrolled properties of MOSFETs. Advantages to the user: • rugged, short-circuit-proof device


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    PDF -12D1 -12D1 -06P1 -12P1 -03G4 -03S4 -12A3/A4 diode 12A3

    diode 12A3

    Abstract: 7512a3
    Text: IGBT Modules NPT IGBT Modules NPT IGBT = non-punch through insulated gate bipolar transistor square RBSOA, short circuit rated phase leg boost chopper buck chopper I single switch v*C 6Ç rt typ v œs V ► New A A Tc= 25°C IGBT Tc= 80°C IGBT 90 135 160


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    PDF page91-100 75-12A3 100-12A3 150-12A4 200-12A4 300-12A4 420-03S4 1000-03G4 40-06D 50-12E diode 12A3 7512a3

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC74LCX16244AFT Low Voltage 16-Bit Bu s Buffer with 5V Tolerant Inputs and Outputs The TC74LCX16244AFT is a high performance C M O S 16-bit B U S BUFFER. Designed for use in 3.3 Volt systems, it achieves high speed operation while maintaning the C M O S


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    PDF TC74LCX16244AFT 16-Bit TC74LCX16244AFT G-136

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A TENTATIVE TC74VCX16244FT TOSHI8A CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74VCX16244FT LOW-VOLTAGE 16-BIT BUS BUFFER WITH 3.6V TOLERANT INPUTS AND OUTPUTS The TC74VCX16244FT is a high performance CMOS 16bit BUS BUFFER. Designed for use in 2.5 Volt systems, it


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    PDF TC74VCX16244FT 16-BIT TC74VCX16244FT 16bit 6244FT TSSOP48-P-0061-0

    TC74VCXR162245FT

    Abstract: No abstract text available
    Text: TOSHIBA TC74VCXR162245FT TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC T C 7 4 V C X R 1 6 2 2 4 5 FT LOW-VOLTAGE 16-BIT BUS TRANSCEIVER WITH 3.6V TOLERANT INPUTS AND OUTPUTS The TC74VCXR162245FT is a high performance CMOS 16-bit BUS TRANSCEIVER. Designed for use in 1.8, 2.5 or 3.3 Volt


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    PDF TC74VCXR162245FT 16-BIT TC74VCXR162245FT 16bit TSSOP48-P-OQ61

    P174FCT

    Abstract: p174fct162 i6240
    Text: f j j PER/COM PI74FCT16240T PI74FCT162240T PI74FCT162H240T Product Features: Fast CMOS 16-Bit Buffer/Line Drivers Common Features: • PI74FCT16240T, PI74FCT162240T, and PI74FCT162H240T are high-speed, low power devices with high current drive • V cc = 5 V ±10%


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    PDF PI74FCT16240T, PI74FCT162240T, PI74FCT162H240T PI74FCT16240T PI74FCT162240T 16-Bit PI74FCT P174FCT p174fct162 i6240