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    DIODE 120B Search Results

    DIODE 120B Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
    CUZ16V Toshiba Electronic Devices & Storage Corporation Zener Diode, 16 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    DIODE 120B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    c2 zener renesas

    Abstract: B2 Zener HZS11 HZS12 HZS15 HZS16 HZS18 HZS20 HZS24 HZS30
    Text: HZS Series Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply REJ03G0184-0300Z Previous: ADE-208-120B Rev.3.00 Mar.11.2004 Features • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized


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    PDF REJ03G0184-0300Z ADE-208-120B) c2 zener renesas B2 Zener HZS11 HZS12 HZS15 HZS16 HZS18 HZS20 HZS24 HZS30

    diode 120B

    Abstract: air cooled heatsink
    Text: B2U-MDD26/14 PS260/120B 57Amp Single phase diode rectifier assembly Features: • • • • Isolated module solution DC Busbars Aluminium heatsink mounted Naturally air cooled Characteristics: Symbol Idc Vrms Tamb Tstg Parameter Output DC current rating naturally air cooled


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    PDF B2U-MDD26/14 PS260/120B 57Amp ECL020340 diode 120B air cooled heatsink

    Hitachi DSA002725

    Abstract: No abstract text available
    Text: HZS Series Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply ADE-208-120B Z Rev 2 Nov 1999 Features • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6V through 38V of zener voltage provide flexible application.


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    PDF ADE-208-120B Hitachi DSA002725

    zener hitachi

    Abstract: zener 5.1 B2 zener mark code A2 hzs6b2 Hitachi DSAUTAZ006 ECG 177 zener diode zener series hzs
    Text: HZS Series Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply ADE-208-120B Z Rev. 2 Nov. 1999 Features • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6V through 38V of zener voltage provide flexible application.


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    PDF ADE-208-120B D-85622 zener hitachi zener 5.1 B2 zener mark code A2 hzs6b2 Hitachi DSAUTAZ006 ECG 177 zener diode zener series hzs

    1SMB3EZ11

    Abstract: 1SMB3EZ12 1SMB3EZ13 1SMB3EZ14 1SMB3EZ15 1SMB3EZ200
    Text: 1SMB3EZ11 THRU 1SMB3EZ200 SURFACE MOUNT SILICON ZENER DIODE VOLTAGE - 11 TO 200 Volts Power - 3.0 Watts FEATURES l For surface mounted applications in order to optimize board space l Low profile package l Built-in strain relief l l Glass passivated junction


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    PDF 1SMB3EZ11 1SMB3EZ200 DO-214AA DO-214AA, MIL-STD-750, 1SMB3EZ12 1SMB3EZ13 1SMB3EZ14 1SMB3EZ15 1SMB3EZ200

    Untitled

    Abstract: No abstract text available
    Text: SKM 120B020 Absolute Maximum Ratings Symbol Conditions ! 3 / 4    0  &  Values Units  ) #78% .) ; ) = >) , ? (/) #(/% 5   5 4 /) 5 @ 3 =  ()  @9 3 = 9 .)  5    9 5: !< #!% ! 3 / #7/% 4 (  5  (  ,


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    PDF 120B020

    120b02

    Abstract: SKM120B020
    Text: SKM 120B020 Absolute Maximum Ratings Symbol Conditions ! 3 / 4    0  &  Values Units  ) #78% .) ; ) = >) , ? (/) #(/% 5   5 4 /) 5 @ 3 =  ()  @9 3 = 9 .)  5    9 5: !< #!% ! 3 / #7/% 4 (  5  (  ,


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    PDF 120B020 120b02 SKM120B020

    HD74LVC16245A

    Abstract: Hitachi DSA00309
    Text: HD74LVC16245A 16-bit Bus Transceivers with 3-state Outputs ADE-205-120B Z 3rd Edition December 1996 Description The HD74LVC16245A has sixteen two direction buffers, for the fittest at two direction bus lines with three state outputs. A direction control input, DIR. When DIR is high, data flows from the A inputs to the B


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    PDF HD74LVC16245A 16-bit ADE-205-120B HD74LVC16245A Hitachi DSA00309

    Hitachi DSA0076

    Abstract: HD74LVC16245A
    Text: HD74LVC16245A 16-bit Bus Transceivers with 3-state Outputs ADE-205-120B Z 3rd Edition December 1996 Description The HD74LVC16245A has sixteen two direction buffers, for the fittest at two direction bus lines with three state outputs. A direction control input, DIR. When DIR is high, data flows from the A inputs to the B


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    PDF HD74LVC16245A 16-bit ADE-205-120B HD74LVC16245A Hitachi DSA0076

    HD74LVC16245A

    Abstract: HD74LVC16245ATEL
    Text: HD74LVC16245A 16-bit Bus Transceivers with 3-state Outputs REJ03D03650400Z Previous ADE-205-120B(Z Rev.4.00 Jul. 29, 2004 Description The HD74LVC16245A has sixteen two direction buffers, for the fittest at two direction bus lines with three state outputs. A direction control input, DIR. When DIR is high, data flows from the A inputs to the B outputs. When DIR


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    PDF HD74LVC16245A 16-bit REJ03D0365 0400Z ADE-205-120B HD74LVC16245A HD74LVC16245ATEL

    Untitled

    Abstract: No abstract text available
    Text: HD74LVC16245A 16-bit Bus Transceivers with 3-state Outputs REJ03D03650400Z Previous ADE-205-120B(Z Rev.4.00 Jul. 29, 2004 Description The HD74LVC16245A has sixteen two direction buffers, for the fittest at two direction bus lines with three state outputs. A direction control input, DIR. When DIR is high, data flows from the A inputs to the B outputs. When DIR


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    PDF HD74LVC16245A 16-bit REJ03D0365â 0400Z ADE-205-120B HD74LVC16245A

    MT1115

    Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
    Text: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir


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    PDF 108th MT1115 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117

    Untitled

    Abstract: No abstract text available
    Text: • R A P T 11G F 120B R D ADVANCED W .\A p o w e r Te c h n o l o g y “ 1200V 22A Fast IGBT& FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using NonPunch Through Technology the Fast IGBT™ combined with an APT free­ w heeling ultraFast Recovery Epitaxial Diode FRED offers superior


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    PDF 20KHz APT11GF120BRD O-247

    GV 475 diode

    Abstract: 1SMB3EZ11 1SMB3EZ12 1SMB3EZ13 1SMB3EZ14 1SMB3EZ200 zener Diode 19B H 48 zener diode
    Text: TRANSYS ELECTRONICS LIMITED 1SMB3EZ11 THRU 1SMB3EZ200 SURFACE MOUNT SILICON ZENER DIODE VOLTAGE - 11 TO 200 Volts Power - 3.0 W atts FEATURES For surface mounted app cations in order to DO-214AA optimize board space MODIFIED J-BEND Low prof e package Built-in strain re ef


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    PDF 1SMB3EZ11 1SMB3EZ200 0J/10 DO-214AA, MIL-STD-750, GV 475 diode 1SMB3EZ12 1SMB3EZ13 1SMB3EZ14 1SMB3EZ200 zener Diode 19B H 48 zener diode

    logos 4012B

    Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
    Text: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX


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    PDF TDA1510 TDA1510A logos 4012B 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485

    inverter 3phase 220 volt

    Abstract: diode 120B
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Hybrid Pow er M odule MHPM7A 16A 120B Integrated Power Stage for 3.0 hp Motor Drives This device is not recommended for new designs (This device is replaced by MHPM7A15S120DC3) This module integrates a 3-phase input rectifier bridge, 3-phase


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    PDF MHPM7A15S120DC3) inverter 3phase 220 volt diode 120B

    G30-E3

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Hybrid Pow er Module M HPM 7B 16A 120B Integrated Power Stage for 3.0 hp Motor Drives This device is not recommended for new designs (This device is replaced by MHPM7A15S120DC3) This module integrates a 3-phase input rectifier bridge, 3-phase


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    PDF MHPM7A15S120DC3) G30---------E3 7B16A120B G30-E3

    Motorola 4-291

    Abstract: HPM7A25A120B
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Hybrid Pow er M odule Integrated Power Stage for 5 hp Motor Drives M HPM 7A 25A 120B This device is not recommended for new designs (This device is replaced by MHPM7A25S120DC3) 25 AMP, 1200 VOLT HYBRID POWER MODULE This module integrates a 3-phase input rectifier bridge, 3-phase


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    PDF MHPM7A25S120DC3) HPM7A25A120B Motorola 4-291 HPM7A25A120B

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Hybrid Power Module Integrated Power Stage for 5 hp Motor Drives M HPM 7B 25A 120B This device is not recommended for new designs (This device is replaced by MHPM7A25S120DC3) 25 AMP, 1200 VOLT HYBRID POWER MODULE This module integrates a 3-phase input rectifier bridge, 3-phase


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    PDF MHPM7A25S120DC3) MHPM7B25A120B

    GI 312 diode

    Abstract: bridge RECTIFIER GI IGBT 50 amp 1000 volt vqe 23 MHPM7B16A120B MHPM7A15S120DC3 5SC3 2a1012
    Text: MOTOROLA Order this documenti by MHPM7B16A120B/D SEMICONDUCTOR TECHNICAL DATA Hybrid Power Module Integrated Power Stage for 3.0 hp Motor Drives M H PM 7B 16A 120B This device is not recommended for new designs (This device is replaced by MHPM7A15S120DC3)


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    PDF MHPM7B16A120B/D MHPM7A15S120DC3) D10D313 GI 312 diode bridge RECTIFIER GI IGBT 50 amp 1000 volt vqe 23 MHPM7B16A120B MHPM7A15S120DC3 5SC3 2a1012

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum enti by M HPM 7A16A 120B/D SEMICONDUCTOR TECHNICAL DATA Hybrid Pow er M odule M H P M 7A 1 6 A 1 2 0 B Integrated Power Stage for 3.0 hp Motor Drives This device is not recommended for new designs (This device is replaced by MHPM7A15S120DC3)


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    PDF 7A16A 120B/D MHPM7A15S120DC3)

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum enti by M HPM 7A25A 120B/D SEMICONDUCTOR TECHNICAL DATA Hybrid Power Module Integrated Power Stage for 5 hp Motor Drives M H PM 7A 25A120B This device is not recommended for new designs (This device is replaced by MHPM7A25S120DC3)


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    PDF 7A25A 120B/D MHPM7A25S120DC3)

    BT 1840 PA

    Abstract: pms Bridge Rectifier THA 1200 S uaa 1300
    Text: MOTOROLA Order this documant by MHPM7B18A120B/D SEMICONDUCTOR TECHNICAL DATA 7 16 120B MHPM B A Hybrid Power Module Motore « Profond Dovfoa Integrated Power Stage for 3.0 hp Motor Drives This module Integrates a 3-phase Input rectifier bridge, 3-phase output


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    PDF MHPM7B18A120B/D MHPM7B16A120B BT 1840 PA pms Bridge Rectifier THA 1200 S uaa 1300

    081Q

    Abstract: No abstract text available
    Text: A APT33GF120B2RD APT33GF120LRD 1200V 52A dvanced row er TECHN O LO G Y APT33G F 120B 2R D Fast IG B T & F R E D The Fast IGBT is a new generation of high voltage power IGBTs. Using NonPunch Through Technology the Fast IGBT™ combined with an APT free­


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    PDF APT33GF120B2RD APT33GF120LRD APT33G 20KHz APT33GF120LHD APT33GF120B2RD/LRD 20Kf2) O-264 081Q