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    DIODE 11 GK Search Results

    DIODE 11 GK Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
    CUZ16V Toshiba Electronic Devices & Storage Corporation Zener Diode, 16 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    DIODE 11 GK Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MCMA120UJ1800ED

    Abstract: No abstract text available
    Text: MCMA120UJ1800ED preliminary 3~ Rectifier Thyristor Module VRRM = 1800 V I DAV = 117 A I FSM = 500 A 3~ Rectifier Bridge, half-controlled high-side + free wheeling Diode Part number MCMA120UJ1800ED Backside: isolated 17 15 12 18 16 13 10 / 11 19 / 20 2/3


    Original     		PDF MCMA120UJ1800ED 60747and 20120402a 2768-T1-m MCMA120UJ1800ED

    MCMA120UJ1800ED

    Abstract: No abstract text available
    Text: MCMA120UJ1800ED preliminary 3~ Rectifier Thyristor Module VRRM = 1800 V I DAV = 117 A I FSM = 500 A 3~ Rectifier Bridge, half-controlled high-side + free wheeling Diode Part number Backside: isolated 17 15 12 18 16 13 10 / 11 19 / 20 2/3 4/5 6/7 21 / 22


    Original     		PDF MCMA120UJ1800ED 60747and 20120402a 2768-T1-m MCMA120UJ1800ED

    Untitled

    Abstract: No abstract text available
    Text: 40 V, 26 A, 6.9 mΩ Low RDS ON N ch Trench Power MOSFET GKI04076 Features Package  V(BR)DSS - 40 V (ID = 100 µA)  ID - 26 A  RDS(ON) - 8.9 mΩ max. (VGS = 10 V, ID = 23.3 A)


    Original     		PDF GKI04076 GKI04076-DS

    Untitled

    Abstract: No abstract text available
    Text: 60 V, 40 A, 4.8 mΩ Low RDS ON N ch Trench Power MOSFET GKI06071 Features Package  V(BR)DSS - 60 V (ID = 100 µA)  ID - 40 A  RDS(ON) - 6.5 mΩ max. (VGS = 10 V, ID = 34.0 A)


    Original     		PDF GKI06071 GKI06071-DS

    Untitled

    Abstract: No abstract text available
    Text: 40 V, 26 A, 6.9 mΩ Low RDS ON N ch Trench Power MOSFET GKI04076 Features Package  V(BR)DSS - 40 V (ID = 100 µA)  ID - 26 A  RDS(ON) - 8.9 mΩ max. (VGS = 10 V, ID = 23.3 A)


    Original     		PDF GKI04076 GKI04076-DS

    Untitled

    Abstract: No abstract text available
    Text: 60 V, 40 A, 4.8 mΩ Low RDS ON N ch Trench Power MOSFET GKI06071 Features Package  V(BR)DSS - 60 V (ID = 100 µA)  ID - 40 A  RDS(ON) - 6.5 mΩ max. (VGS = 10 V, ID = 34.0 A)


    Original     		PDF GKI06071 GKI06071-DS

    5 pins relay pin diagram

    Abstract: 5 pin relay 12v 5 V DC RELAY 5 pin relay data sheet specifications of 12v relay 5v 12v relay relay 5v relay 12v 3a datasheet relay 12v dc 5 pin 12v relay
    Text: AGK2 ULTRA-SMALL PACKAGE 2 FORM A POLARIZED RELAY GK-RELAYS FEATURES 6.00 .236 5.20 .205 5.50 .217 mm inch • Compact body saves space Thanks to the small surface area of 6.0 mm x 5.2 mm .236 inchx.205 inch and low height of 5.5 mm .217 inch, the packaging


    Original     		PDF

    DIN 933

    Abstract: GDML 3011 LED 24 RG LG diode 831 GDME 311 228-G1 GDML GDML 211 GDML 2011 GE1 G gdml 2011 DIN 43650-A
    Text: GDM Series DIN 43650-A/ISO 4400 Cable socket, self-assembly Product description • in appliances and equipment subject to vibrations, e.g. track-bound vehicles, building machinery, conveying systems, using the crimp connection method GDMC Further information


    Original     		PDF 3650-A/ISO 0722/DIN com62 DIN 933 GDML 3011 LED 24 RG LG diode 831 GDME 311 228-G1 GDML GDML 211 GDML 2011 GE1 G gdml 2011 DIN 43650-A

    RTL 602 W

    Abstract: IC802 transistor T1J K40 fet IC-221 CN602 transistor k38 w7 transistor k79 VC175 DFJP050ZA002
    Text: ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! "#$%#!&"'! $*+*,*-(,! ! ./012341! (567893:! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! (;<),!


    Original     		PDF I/08/4! 65134B 086C3 9E73B 518D9' I5134! M0934N 58D2BD RTL 602 W IC802 transistor T1J K40 fet IC-221 CN602 transistor k38 w7 transistor k79 VC175 DFJP050ZA002

    Untitled

    Abstract: No abstract text available
    Text: / I T S C S -1H 0 M S 0 N ^ 7 1 , [10 gK [l[L[I(gîœMÔ©i L6201 0.3Q DMOS FULL BRIDGE DRIVER ADVANCE DATA to 48V and e ffic ie n tly at high sw itching speeds. A ll the logic inputs are T T L , CMOS and fjtC com patible. Each channel (half-bridge o f the


    OCR Scan     		PDF L6201 L6201 100ns 8BL6201-01

    74LCX74

    Abstract: No abstract text available
    Text: s = 7 ^7# S G S -T H O M S O N Kl gKLiM(s iO(gS 74LCX74 LOW VOLTAGE CMOS DUAL D-TYPE FLIP FLOP WITH 5V TOLERANT INPUTS PRELIMINARY DATA . 5VTOLERAr\TT INPUTS . HIGHSPEED: fM A X = 150 MHz (MAX.) at VCc =3V . POWER-DOWN PROTECTION ON INPUTS AND OUTPUTS . SYMMETRICAL OUTPUT IMPEDANCE:


    OCR Scan     		PDF 74LCX74 74LCX74M 74LCX74T 74LCX74

    TSS0P16

    Abstract: No abstract text available
    Text: s= 7 SGS-THOMSON ^7# Kl gKLiM(s iO(gS 74LVQ157 LOW VOLTAGE QUAD 2 CHANNEL MULTIPLEXER . HIGHSPEED: tpD = 5 ns (TYP.) at Vcc = 3.3V . INPUT & OUTPUT TTL COMPATIBLE LEVELS . LOW POWER DISSIPATION: Ice = 4 pA (MAX.) at T a = 25 °C . LOW NOISE: V o l p = 0.2V (TYP.) at Vcc = 3.3V


    OCR Scan     		PDF 74LVQ157 74LVQ157M 74LVQ157T LVQ157 TSS0P16

    Untitled

    Abstract: No abstract text available
    Text: s = 7 SGS-THOMSON ^7# Kl gKLiM(s iO(gS STD4NB40 N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET PRELIMINARY DATA TYPE STD4NB40 V dss RDS(on) Id 400 V < 1 .8 a 3.7 A • TYPICAL RDS(on) = 1.47 Q. m EXTREMELY HIGH dv/dt CAPABILITY . 100% AVALANCHE TESTED . VERY LOW INTRINSIC CAPACITANCES


    OCR Scan     		PDF STD4NB40 STD4NB40

    smd 27E

    Abstract: MCP3041 smd TRANSISTOR 27e c2075 transistor C2078 MCP3040 MOC3041 optocoupler S7E SMD TRANSISTOR transistor C2075 optocoupler moc3031
    Text: DUALITY- TE CHNOLOG IES CÔRP VDE APPROVED ZERO-CROSSING TRIACS QUALITY TECHNOLOGIES 7non ranee,ur 30 mA MCP3030* MCP3040/0Z* ZEHO-GKUaaiNU 15mAMCP3031 MCP3041/1Z MCP3032 MCP3042/2Z ’ bVE ' DESCRIPTION PACKAGE DIMENSIONS These devices are optically isolated zero-crossing triac


    OCR Scan     		PDF MCP3030* MCP3040/0Z* 15mAMCP3031 MCP3041/1Z MCP3032 MCP3042/2Z MCP3031 MCP303Z smd 27E MCP3041 smd TRANSISTOR 27e c2075 transistor C2078 MCP3040 MOC3041 optocoupler S7E SMD TRANSISTOR transistor C2075 optocoupler moc3031

    Untitled

    Abstract: No abstract text available
    Text: s = 7 SGS-THOMSON ^7# Kl gKLiM(s iO(gS STB9NB65 N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET TYPE STB9NB 65 V dss RDS(on) Id 650 V < 0 .7 5 Q 9A . TYPICAL R DS(on) = 0.62 Q m EXTREMELY HIGH dv/dt CAPABILITY . . . . 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES


    OCR Scan     		PDF STB9NB65 O-263

    LCX574

    Abstract: SC1036 74LCX574
    Text: s = 7 S G ^7# S - T H O M S O N Kl gKLiM(s iO(gS 74LCX574 OCTAL D-TYPE FLIP FLOP NON INVERTING WITH 5V TOLERANT INPUTS AND OUTPUTS PRELIMINARY DATA . 5VTOLERAr\TT INPUTS AND OUTPUTS . HIGHSPEED: fMAX = 150 MHz (MIN.) at Vcc = 3V . POWER-DOWN PROTECTION ON INPUTS


    OCR Scan     		PDF 74LCX574 500mA 74LCX574M 74LCX574T LCX574 SC1036 74LCX574

    Untitled

    Abstract: No abstract text available
    Text: s = 7 S G S -T H O M S O N ^7# Kl gKLiM(s iO(gS 74LCX573 OCTAL D-TYPE LATCH NON INVERTING WITH 5V TOLERANT INPUTS AND OUTPUTS PRELIMINARY DATA . 5VTOLERAr\TT INPUTS AND OUTPUTS . HIGH SPEED: tPD= 8 ns (MAX.) at V cc=3V . POWER-DOWN PROTECTION ON INPUTS AND OUTPUTS


    OCR Scan     		PDF 74LCX573 500mA LCX573

    74LCX374

    Abstract: No abstract text available
    Text: s = 7 ^7# S G S -T H O M S O N Kl gKLiM(s iO(gS 74LCX374 OCTAL D-TYPE FLIP FLOP NON INVERTING WITH 5V TOLERANT INPUTS AND OUTPUTS PRELIMINARY DATA . 5VTOLERAr\TT INPUTS AND OUTPUTS . HIGHSPEED: fMAX = 150 MHz (MIN.) at VCc = 3V . POWER-DOWN PROTECTION ON INPUTS


    OCR Scan     		PDF 74LCX374 74LCX374M 74LCX374T 74LCX374

    Untitled

    Abstract: No abstract text available
    Text: Gate T u rn -o ff T hyristors ~ All types Symmetrical Types ^DRM V gk= -2V ^RRM V GK Note 1 (Note 1) (Note 2) (V) (V) (V) 1200-2500 100-2000 600-1800 100-1400 Type WG5012Rxx to 25Rxx WG6006RXX to 18Rxx WG9006Rxx to 14Rxx WG10026Rxx to 36Rxx WG10037Rxx to 45Rxx


    OCR Scan     		PDF WG5012Rxx 25Rxx WG6006RXX 18Rxx WG9006Rxx 14Rxx WG10026Rxx 36Rxx WG10037Rxx 45Rxx

    WG25008SM

    Abstract: WG5018 WG5026S westcode wg WG15026R WG6006RXX WG7008S Diode Westcode Gate Turn-Off Thyristors all types of thyristors
    Text: Gate Turn-off Thyristors ~ All types Symmetrical Types V DRM Type V RRM V6K ^TGQM @ CS Note 1 WG5012Rxx to 25Rxx T(AV) t V GK = -2V (Note 1) (Note 2) -w r (Note 3) I 2t •^T(RMS) ■^TSM(l) ^TSM(2) Tmse = 25°C 10ms 2 ms (Note 3) (Note 4) (Note 4) (A2s)


    OCR Scan     		PDF WG5012Rxx 25Rxx WG6006RXX 18Rxx WG9006Rxx 14Rxx WG10026RXX 36Rxx WG10037Rxxto 45Rxx WG25008SM WG5018 WG5026S westcode wg WG15026R WG7008S Diode Westcode Gate Turn-Off Thyristors all types of thyristors

    WG5026S

    Abstract: WG6006RXX X103 westcode diodes westcode wg
    Text: Gate T urn-off Thyristors ~ All types Symmetrical Types V R RM ^TGQM@ C S CO ^DRM > Type V GK = -2V I t AV T « =55°C •^TSM(2) 2ms I2t (Note 4) (kA) (Note 4) (Note 4) (kA) (A 2s) 4 7.2 80 x 103 9 130 x 1 0 3 9-8 18 500 x 103 •^T(RMS) W ^ T SM (1) 10ms


    OCR Scan     		PDF W25-C WG5012Rxx 25Rxx WG6006RXX 18Rxx WG9006Rxx 14Rxx WG10026Rxx 36Rxx WG10037RXX WG5026S X103 westcode diodes westcode wg

    Untitled

    Abstract: No abstract text available
    Text: IRF340 A d van ced Power MOSFET FEATURES B V DSS - 400 V ^D S o n = 0 .5 5 Î2 ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 11 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-3P ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 400V


    OCR Scan     		PDF IRF340

    Untitled

    Abstract: No abstract text available
    Text: IRFP340A A d van ced Power MOSFET FEATURES B V DSS - 400 V ^D S o n = 0 .5 5 Î2 ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 11 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-3P ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 400V


    OCR Scan     		PDF IRFP340A

    PN channel MOSFET 10A

    Abstract: 1S71 1S74 C035 STD20N06 TJ50D NMOS depletion pspice model diode 935 lg
    Text: S G S -T H O M S O N HUSCTIiMOÛS STD20N06 N - CHANNEL ENHANCEMENT MODE ’’ULTRA HIGH DENSITY” POWER MOS TRANSISTOR TYPE V dss RDS on Id STD20N06 60 V < 0.03 n 20 A (*) . . • . . . . ■ TYPICAL RDS(on) = 0.026 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    OCR Scan     		PDF STD20N06 STD20N06 O-251) O-252) O-251 O-252 0068771-E 0068772-B PN channel MOSFET 10A 1S71 1S74 C035 TJ50D NMOS depletion pspice model diode 935 lg