105386
Abstract: dek 1.5 47346-0001 WDK 2.5 105366 105396 105446 WDK 4N 10-588 102260
Text: Feed Through Terminals WDK 2.5 D WDK 2.5 D Diode terminal for lamp test circuits Diode terminal for lamp test circuits Branch with Diode Branch with Diode WDK 2.5 LD WDK 2.5 LD Branch with LED Branch with LED Terminal Block Selection Data Available Options
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4N/10
4N/41
105386
dek 1.5
47346-0001
WDK 2.5
105366
105396
105446
WDK 4N
10-588
102260
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UA 741 SMD
Abstract: uA 741 automatic laser power control 6 pin laser diode capacitor 475 laser diode driver circuit automatic power control SMD-Ferrit MS-026 VSC7938 VSC7939
Text: VITESSE SEMICONDUCTOR CORPORATION Preliminary Data Sheet SONET/SDH 3.125Gb/s Laser Diode Driver with Automatic Power Control VSC7939 Features Applications • Power Supply: 3.3V or 5V ±5% • AC-Coupled to Laser Diode • SONET/SDH at 622Mb/s, 1.244Gb/s,
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125Gb/s
VSC7939
622Mb/s,
244Gb/s,
488Gb/s,
062Gb/s)
100mA
VSC7939
125Gb/s.
UA 741 SMD
uA 741
automatic laser power control
6 pin laser diode
capacitor 475
laser diode driver circuit automatic power control
SMD-Ferrit
MS-026
VSC7938
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82952
Abstract: smd 4-pin
Text: VITESSE SEMICONDUCTOR CORPORATION Preliminary Data Sheet SONET/SDH 3.125Gb/s Laser Diode Driver with Automatic Power Control VSC7939 Features Applications • Power Supply: 3.3V or 5V ±5% • AC-Coupled to Laser Diode • SONET/SDH at 155Mb/s, 622Mb/s, 1.244Gb/s,
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VSC7939
125Gb/s
155Mb/s,
622Mb/s,
244Gb/s,
488Gb/s,
125Gb/s
OC-12,
OC-48)
062Gb/s/2
82952
smd 4-pin
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MIP51
Abstract: MIP806 MIP803 MIP501 MIP704 MIP805 MIP824 MIP825 MIP826 MIP2
Text: New EL Display Driving IPD Series with Built-in Diode MIP824/MIP825/MIP826 Overview Unit : mm This series of IPDs Intelligent Power Devices incorporates a diode which formerly was connected externally. It can drive an EL display with high brightness and low power consumption.
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MIP824/MIP825/MIP826
MIP824
MIP825)
MIP501
MIP511
MIP704
MIP709
MIP805
MIP13*
MIP14*
MIP51
MIP806
MIP803
MIP805
MIP825
MIP826
MIP2
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uA 741
Abstract: RF resistor 32-1059 SMD resistor 805 capacitor 475 MS-026 VSC7938 VSC7939 VSC7940 CD 741
Text: VITESSE SEMICONDUCTOR CORPORATION Preliminary Data Sheet SONET/SDH 3.125Gb/s Laser Diode Driver with Automatic Power Control VSC7938 Features Applications • SDH/SONET at 622Mb/s, 1.244Gb/s, 2.488Gb/s, 3.125Gb/s • Power Supply: 3.3V or 5V ±5% • AC-Coupled to Laser Diode
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125Gb/s
VSC7938
622Mb/s,
244Gb/s,
488Gb/s,
100mA
062Gb/s)
VSC7938
125Gb/s.
uA 741
RF resistor 32-1059
SMD resistor 805
capacitor 475
MS-026
VSC7939
VSC7940
CD 741
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Power MOSFET, toshiba
Abstract: MOSFET TOSHIBA HIGH POWER MOSFET TOSHIBA MOSFET NOTEBOOK MOSFET dual SOP-8 BEE0022A TPC8A01 Power MOSFET, P, toshiba N and P MOSFET
Text: 2003-3 News New Product Guide Power MOSFETs with Schottky Barrier Diode for DC/DC converters General Description Appearance To meet requirements for smaller MOSFETs used for DC switches, Toshiba has developed MOSBDs by integrating a power MOSFET and a Schottky barrier diode into a single die. As shown
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TUNNEL DIODE
Abstract: No abstract text available
Text: ACTM-1058 Tunnel Diode Detector Modules Features: • Contains hermetically sealed modules, internal RF matching, DC return, and RF bypass capacitor. • The video port is protected from static or transient charges. • Input impedance matching. • Models may be chosen for broadband RF
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ACTM-1058
TUNNEL DIODE
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Untitled
Abstract: No abstract text available
Text: ACTM-1058 Tunnel Diode Detector Modules Features: • Contains hermetically sealed modules, internal RF matching, DC return, and RF bypass capacitor. • The video port is protected from static or transient charges. • Input impedance matching. • Models may be chosen for broadband RF
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ACTM-1058
14dBm
17dBm
-20dBm
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ACTM-1058
Abstract: No abstract text available
Text: ACTM-1058 TUNNEL DIODE DETECTOR MODULES Frequency Range min Sensitivity (min) Flatness vs. Frequency (max) Typical TSS Typical VSWR Nominal Video Capacitance 6 – 18 700 1.0 -49 2.5:1 9 GHz mV/mW ±dB dBm Ratio pF NOTES: Maximum input power: +14dBm (3dB guardband for +17dBm possible burnout)
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ACTM-1058
14dBm
17dBm
-20dBm
MIL-E-5400,
MIL-STD-202,
MIL-E-16400
MIL-STD-202
MIL-STD-883,
ACTM-1058
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diode 1058
Abstract: ACTM-1058 M107 M103 M105
Text: ACTM-1058 TUNNEL DIODE DETECTOR MODULES Frequency Range min Sensitivity (min) Flatness vs. Frequency (max) Typical TSS Typical VSWR Nominal Video Capacitance 6 – 18 700 1.0 -49 2.5:1 9 GHz mV/mW ±dB dBm Ratio pF NOTES: Maximum input power: +14dBm (3dB guardband for +17dBm possible burnout)
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ACTM-1058
14dBm
17dBm
-20dBm
MIL-E-5400,
MIL-STD-202,
MIL-E-16400
MIL-STD-202F,
M103-STD-883,
MIL-STD-883,
diode 1058
ACTM-1058
M107
M103
M105
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diode 348
Abstract: 105800
Text: Technische Information / Technical Information Schnelle Gleichrichterdiode Fast Diode D 348 S 16.20 S Elektrische Eigenschften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung repetitive peak forward reverse voltage
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SR 4600 A
Abstract: No abstract text available
Text: Technische Information / Technical Information Schnelle Gleichrichterdiode Fast Diode D 348 S 16.20 S Elektrische Eigenschften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung repetitive peak forward reverse voltage
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Untitled
Abstract: No abstract text available
Text: Technische Information / Technical Information Schnelle Gleichrichterdiode Fast Diode D 348 S 16.20 S Elektrische Eigenschften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung repetitive peak forward reverse voltage
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DRD5150H65
Abstract: No abstract text available
Text: DRD5150H65 Rectifier Diode DS6059 – 1 April 2011 LN28299 FEATURES KEY PARAMETERS • Double Side Cooling High Surge Capability VRRM IF(AV) IFSM 6500V 5150A 82500A VOLTAGE RATINGS Part and Ordering Number DRD5150H65 DRD5150H62 DRD5150H58 DRD5150H54
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DRD5150H65
DS6059
LN28299)
2500A
DRD5150H62
DRD5150H58
DRD5150H54
DRD5150H65
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xb15a308
Abstract: 1E01 HIGH POWER ANTENNA SWITCH PIN DIODE r065
Text: PIN DIODE ◆High Power Handling •Applications ◆Small Capacitance at Zero Bias, Extremely ●High Power Antenna Switch 10W output two-way radio Small Reverse Bias ◆Small Series Order Resistance ◆Small Insertion Loss, High Isolation ◆Extremely Small Wave Distortion
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-80dBc,
-73dBc
XB15A308
DO-35
470MHz,
100MHz,
1E01
HIGH POWER ANTENNA SWITCH PIN DIODE
r065
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Untitled
Abstract: No abstract text available
Text: A Business Partner of Renesas Electronics Corporation. PS2801C-1, PS2801C-4 HIGH ISOLATION VOLTAGE SSOP PHOTOCOUPLER Data Sheet R08DS0072EJ0400 Rev.4.00 Jan 9, 2013 DESCRIPTION These products are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon
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PS2801C-1,
PS2801C-4
R08DS0072EJ0400
16-pin
PS2801C-1-F3,
PS2801C-4-F3
PS2801C-1-F4
PS2801C-4-F4
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GPDR4460
Abstract: GPDR4460T001
Text: Green Power Solutions srl Via Greto di Cornigliano 6R - 16152 Genova , Italy Phone: +39-010-659 1869 Fax: +39-010-659 1870 Web: www.gpsemi.it E-mail: info@gpsemi.it GPDR4460 RECTIFIER DIODE PRELIMINARY VOLTAGE UP TO 4000 V AVERAGE CURRENT 4600 A SURGE CURRENT
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GPDR4460
GPDR4460T001
GPDR4460
GPDR4460T001
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PMD9010D
Abstract: tsop6 marking 312
Text: PMD9010D MOSFET driver Rev. 01 — 20 November 2006 Product data sheet 1. Product profile 1.1 General description Two NPN transistors and high-speed switching diode connected in totem pole configuration in a small SOT457 SC-74 Surface-Mounted Device (SMD) plastic
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PMD9010D
OT457
SC-74)
PMD9010D
tsop6 marking 312
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RLT1060-10MG
Abstract: laserdiode
Text: ROITHNER LASERTECHNIK SCHOENBRUNNER STRASSE 7, VIENNA, AUSTRIA TEL: +43 -1- 586 52 43-0 FAX: +43 -1- 586 52 43-44 office@roithner-laser.com www.roithner-laser.com RLT1060-10MG TECHNICAL DATA Infrared Laser Diode NOTE! Structure: double heterostructure Lasing wavelength: 1063 nm typ.
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RLT1060-10MG
RLT1060-10MG
laserdiode
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1058760000
Abstract: 1011100000 1011180000 1011120000 9537550000 0338000000
Text: WTR 2.5 D WTR 2.5 Disconnect Terminals with 2 test sockets StB 2.3 with diode plug and with diode plug 2.3 test socket (StB) 9 / i \ 'A it Polarity base from view of closed side P lu g Lever Lever Polarity base from view of closed side P lu g Terminal Block Selection Data
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diode 1n4007
Abstract: 1N4007 diodes 1n4007 FAH diode diode,1N4007 Diode -1N4007 1a 1000v 47146 I-26366 DIODE1N4007
Text: Diode Plugs D LS 2 DLS 2 for SAKR-D for SAKR-D WSD 2.5 WTR 2.5 D DQS 2 for 6mm-wide terminus mm SAKR-D SAKR-D WTR 2.5 D JB ^ with diode plug with test sockets m p Term, width +.2 assy. tol. mm Insulation stripping length mm C onnection data Screw connection, solid
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1N4007
I--------26366
1N4007,
1N4007
diode 1n4007
diodes 1n4007
FAH diode
diode,1N4007
Diode -1N4007
1a 1000v
47146
I-26366
DIODE1N4007
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10-5846
Abstract: No abstract text available
Text: WTR 2.5 Screw Clamp 35 mm DIN-Rail Terminals Disconnect WTR 2.5 D WTR 2.5 D WTR 2.5 with diode plug with StB without plug with diode plug and A mji JUi 2.3 test socket D im en sions W idth/Length/Height mm in. With TS 35 x 7.5 ^ With TS 32 c_j mm (in.) Insulation stripping length
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diode IN 4007
Abstract: diode 4007 1N4007 IN 4007 diodes in 4007 diode diode N 4007 n 4007 KH 4007 diode diode "IN 4007"
Text: Diode Plug DLS 2 DLS 2 for SAKR-D for SAKR-D DQS 2 *W WSD 2.5 n DLS 2 WTR 2.5 D n li SAKR-D WTR 2.5 D SAKR-D with diode plug with test sockets » ' ci \ I * ’ » : k- n T Dimensions Terminal width (+ assembly tolerance 0.2 mm (in.) 6.5 (.26) 6.5 (.26)
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-w05477
diode IN 4007
diode 4007
1N4007
IN 4007 diodes
in 4007 diode
diode N 4007
n 4007
KH 4007
diode
diode "IN 4007"
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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