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    1E01 Search Results

    1E01 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD1E01B04DPYT Texas Instruments 1-channel ESD protection diode for USB Type-C and Thunderbolt 3 2-X1SON -40 to 125 Visit Texas Instruments Buy
    LMK61E0-155M52SIAR Texas Instruments Ultra-Low Jitter Standard Differential Oscillator - 155M52 6-QFM -40 to 85 Visit Texas Instruments Buy
    LMK61E0-156M25SIAT Texas Instruments Ultra-Low Jitter Standard Differential Oscillator - 156M25 6-QFM -40 to 85 Visit Texas Instruments Buy
    TPD1E01B04DPLR Texas Instruments 1-channel ESD protection diode for USB Type-C and Thunderbolt 3 2-X2SON -40 to 125 Visit Texas Instruments Buy
    TPD1E01B04DPYR Texas Instruments 1-channel ESD protection diode for USB Type-C and Thunderbolt 3 2-X1SON -40 to 125 Visit Texas Instruments Buy
    SF Impression Pixel

    1E01 Price and Stock

    Taoglas Antenna Solutions RECE.20279.001E.01

    CONN UMC RCPT STR 50 OHM SMD
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    DigiKey RECE.20279.001E.01 Reel 30,000 5,000
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    Mouser Electronics RECE.20279.001E.01 30,978
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    Newark RECE.20279.001E.01 Bulk 1,718 1
    • 1 $0.884
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    Bristol Electronics RECE.20279.001E.01 10,864
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    RECE.20279.001E.01 449 3
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    Richardson RFPD RECE.20279.001E.01 100 1
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    Avnet Asia RECE.20279.001E.01 20 Weeks 5,000
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    Chip1Stop RECE.20279.001E.01 100
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    EBV Elektronik RECE.20279.001E.01 21 Weeks 5,000
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    IBS Electronics RECE.20279.001E.01 1,093
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    Symmetry Electronics RECE.20279.001E.01 5,000
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    Texas Instruments TPD1E01B04DPYT

    TVS DIODE 3.6VWM 15VC 2X1SON
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    DigiKey TPD1E01B04DPYT Reel 13,000 250
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    TPD1E01B04DPYT Cut Tape 364 1
    • 1 $0.94
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    Mouser Electronics TPD1E01B04DPYT 13,238
    • 1 $0.72
    • 10 $0.545
    • 100 $0.423
    • 1000 $0.361
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    Bristol Electronics TPD1E01B04DPYT 110
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    Win Source Electronics TPD1E01B04DPYT 18,000
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    Texas Instruments TPD1E01B04DPYRQ1

    AUTOMOTIVE 0.18-PF, 3.6-V, 15-KV
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    DigiKey TPD1E01B04DPYRQ1 Cut Tape 12,491 1
    • 1 $0.47
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    TPD1E01B04DPYRQ1 Reel 10,000 10,000
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    Mouser Electronics TPD1E01B04DPYRQ1 5,365
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    Win Source Electronics TPD1E01B04DPYRQ1 172,624
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    I-PEX Co Ltd 20566-001E-01

    MHF 5 RECEPTACLE
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    DigiKey 20566-001E-01 Cut Tape 7,512 1
    • 1 $1.77
    • 10 $1.543
    • 100 $1.3786
    • 1000 $0.98475
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    Chip1Stop 20566-001E-01 Cut Tape 201
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    New Advantage Corporation 20566-001E-01 20,000 1
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    I-PEX Co Ltd 20599-031E-01

    MINIFLEX 3-BFNH LK 31P
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    DigiKey 20599-031E-01 Cut Tape 4,737 1
    • 1 $1.85
    • 10 $1.408
    • 100 $1.0836
    • 1000 $0.84709
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    1E01 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MBR0540T1G, NRVB0540T1G, MBR0540T3G, NRVB0540T3G Surface Mount Schottky Power Rectifier SOD−123 Power Surface Mount Package The Schottky Power Rectifier employs the Schottky Barrier principle with a barrier metal that produces optimal forward voltage drop−reverse current tradeoff. Ideally suited for low voltage, high


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    PDF MBR0540T1G, NRVB0540T1G, MBR0540T3G, NRVB0540T3G OD-123 MBR0540T1/D

    Untitled

    Abstract: No abstract text available
    Text: Doc No. TT4-EA-14292 Revision. 6 Product Standards MOS FET FJ3P02100L FJ3P02100L Unit: mm • Package dimension Silicon P-channel MOSFET 2.0 For Load-switching 0.2 3 2.0 0.25  Features 1  Low drain-source ON resistance:RDS(on)typ. = 12.0m (VGS = -2.5 V)


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    PDF TT4-EA-14292 FJ3P02100L

    Untitled

    Abstract: No abstract text available
    Text: VSKDS400/045 www.vishay.com Vishay Semiconductors ADD-A-PAK Generation VII Power Modules Schottky Rectifier, 200 A FEATURES • 150 °C TJ operation • Low forward voltage drop • High frequency operation • Low thermal resistance • UL approved file E78996


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    PDF VSKDS400/045 E78996 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    JEDEC-JESD47

    Abstract: vs-30pt100
    Text: VS-30PT100 www.vishay.com Vishay Semiconductors High Performance Generation 5.0 Schottky Rectifier, 30 A FEATURES Base cathode • 175 °C high performance Schottky diode • Very low forward voltage drop 2 • Extremely low reverse leakage • Optimized VF vs. IR trade off for high efficiency


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    PDF VS-30PT100 O-247AC 2002/95/EC JEDEC-JESD47 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 JEDEC-JESD47 vs-30pt100

    Untitled

    Abstract: No abstract text available
    Text: Doc No. TT4-EA-14765 Revision. 1 Product Standards MOS FET FJ3P01130L FJ3P01130L Unit: mm • Package dimension Silicon P-channel MOSFET 2.0  Application 0.2 3  Battery FET  Load switch 2.0 0.25  Features Low drain-source ON resistance:RDS(on)max. = 10.0mΩ (VGS = -3.5 V)


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    PDF TT4-EA-14765 FJ3P01130L

    transil diode

    Abstract: No abstract text available
    Text: ITA6V1U1 Application Specific Discretes A.S.D.TM TRANSILTM ARRAY FOR DATALINE PROTECTION APPLICATIONS Data transmission lines protection : - Unipolar signal up to 5.5V - Bipolar signal in the +/- 2.5V range FEATURES HIGH SURGE CAPABILITY TRANSIL ARRAY IPP = 40 A 8/20µs


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    PDF

    EM78458

    Abstract: EM78459 78459
    Text: EM78458/459 8-Bit Microcontroller with MASK ROM Product Specification DOC. VERSION 1.4 ELAN MICROELECTRONICS CORP. May 2005 Trademark Acknowledgments: IBM is a registered trademark and PS/2 is a trademark of IBM. Windows is a trademark of Microsoft Corporation.


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    PDF EM78458/459 EM78458AP 300mil EM78459AK EM78459AM EM78458AM EM78458 EM78459 78459

    in4577

    Abstract: CLM2950 CLM2950ACN-X CLM2950CN-X CLM2951 CLM2951ACP-X CLM2951ACS-X CLM2951CP-X CLM2951CS-X
    Text: 150mA Low Dropout Voltage Regulators CORPORATION CLM2950 / CLM2951 FEATURES • 5V, 3.3V, and 3.0V Versions at 150mA Output • Very Low Quiescent Current Dropout Voltage • Low • Extremely Tight Load and Line Regulation • Very Low Temperature Coefficient


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    PDF 150mA CLM2950 CLM2951 LP2950/LP2951 CLM2951 1E-28 in4577 CLM2950ACN-X CLM2950CN-X CLM2951ACP-X CLM2951ACS-X CLM2951CP-X CLM2951CS-X

    SE 7889

    Abstract: st 9514 C360N AN3636 e500 Core Family Reference Manual an363 MPC8560 73cd6 MPC8560ADS 0x007B0000
    Text: Freescale Semiconductor Application Note Document Number: AN3636 Rev. 1, 08/2008 PowerQUICC III Performance Monitors Using the Core and System Performance Monitors This application note describes aspects of utilizing the core and device-level performance monitors on


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    PDF AN3636 SE 7889 st 9514 C360N AN3636 e500 Core Family Reference Manual an363 MPC8560 73cd6 MPC8560ADS 0x007B0000

    EM78156EAS

    Abstract: EM78156EP EM78P156E EM78156E EM78156EKM EM78156EM
    Text: EM78156E 8-Bit Microcontroller with MASK ROM Product Specification DOC. VERSION 1.3 ELAN MICROELECTRONICS CORP. July 2004 Trademark Acknowledgments: IBM is a registered trademark and PS/2 is a trademark of IBM. Windows is a trademark of Microsoft Corporation.


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    PDF EM78156E EM78156EP EM78156EM EM78156EAS EM78156EKM 18-Lead 20-Lead EM78156EAS EM78156EP EM78P156E EM78156E EM78156EKM EM78156EM

    Oscilloquartz

    Abstract: OCXO8673 Crystal 8.672 OSCILLOQUARTZ S.A OCXO 406 oscilloquartz 4.096
    Text: SC-cut Product Description The modular design offers the flexibility to accomodate 3rd overtone crystal resonator to enhance long term stability few parts in 10-10 per day and features a sine or TTL-compatible output. Furthermore, industry standard footprint


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    PDF 1E-10/day CH-2002 \XO\SPECOSA\DATA\OCXO8673 Oscilloquartz OCXO8673 Crystal 8.672 OSCILLOQUARTZ S.A OCXO 406 oscilloquartz 4.096

    diode b1c SMD

    Abstract: EM78P159NAS R3F SMD EM78P159N XTAL 8MHZ SMD EM78P157N EM78P159NM EM78P159NP DIODE C63
    Text: EM78P159N 8-Bit Microcontroller with OTP ROM Product Specification DOC. VERSION 1.0 ELAN MICROELECTRONICS CORP. March 2006 Trademark Acknowledgments: IBM is a registered trademark and PS/2 is a trademark of IBM. Windows is a trademark of Microsoft Corporation.


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    PDF EM78P159N EM78P159N diode b1c SMD EM78P159NAS R3F SMD XTAL 8MHZ SMD EM78P157N EM78P159NM EM78P159NP DIODE C63

    crystal oscillator clock 3.579MHZ

    Abstract: EM785830AA EM785830AAM EM78P5830AA EM78P5830AAM EM78P5830AM EM78P5830AP ICE5830 SPIB6 ph76
    Text: EM785830AA 8-BIT MICRO-CONTROLLER Version 1.6 ELAN MICROELECTRONICS CORP. No. 12, Innovation 1st RD., Science-Based Industrial Park Hsin Chu City, Taiwan TEL: 03 5639977 FAX: (03)5630118 Version History Specification Revision History Version EM785830AA 1.0


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    PDF EM785830AA eFHP5830A, eFHP5830AA, eFHP5830BA eFH5830A" eFH5830AA EM785830AA, EM78P5830A/AA crystal oscillator clock 3.579MHZ EM785830AA EM785830AAM EM78P5830AA EM78P5830AAM EM78P5830AM EM78P5830AP ICE5830 SPIB6 ph76

    PD2111

    Abstract: 403CNQ100PBF 403CNQ 40HF P460
    Text: Bulletin PD-21111 12/05 403CNQ100PbF SCHOTTKY RECTIFIER 400 Amp LUG TERMINAL ANODE 1 LUG TERMINAL ANODE 2 BASE COMMON CATHODE Major Ratings and Characteristics Characteristics Description/ Features Values Units IF AV Rectangular 400 A VRRM 100 V 25,500 A


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    PDF PD-21111 403CNQ100PbF 200Apk, 403CNQ. PD2111 403CNQ100PBF 403CNQ 40HF P460

    MIC5232

    Abstract: MIC5232-3.3YD5
    Text: MIC5232 10mA Ultra-Low Quiescent Current µCap LDO General Description Features • • • • • • The MIC5232 is an ultra-low quiescent current, lowdropout linear regulator that is capable of operating from a single-cell lithium ion battery. Consuming only


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    PDF MIC5232 MIC5232 M9999-112006-B MIC5232-3.3YD5

    BUK456-100A

    Abstract: BUK456 BUK456-100 BUK456-100B
    Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


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    PDF O220AB BUK456-100A/B BUK456 -100A -100B BUK456-100A BUK456 BUK456-100 BUK456-100B

    BUK542

    Abstract: BUK542-100A BUK542-100B
    Text: PHILIPS INTERNATIONAL bSE ]> • 711QSSb ODbmfll Tbfl ■ PHIN Philips Semiconductors Product Specification PowerMOS transistor BUK542-100A/B Logic level GENERAL DESCRIPTION PINNING -SO T186 PIN SYMBOL


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    PDF 711QSSb BUK542-100A/B -SOT186 BUK542 -100A -100B BUK542-100A BUK542-100B

    8uk453

    Abstract: BUK453-60A BUK453-60B T0220AB
    Text: PHILIPS IN T E R NA TI ON AL bSE D B 711Dfl2b D D m O B L Philips Semiconductors PowerMOS transistor G EN ERA L DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


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    PDF 7110fi2b BUK453-60A/B T0220AB BUK453 8uk453 BUK453-60A BUK453-60B

    BUK426-100B

    Abstract: transistor BU 110 BUK426-100A
    Text: Philips Components Data sheet status Product specification date of issue March 1991 PHILIPS 7 - 3 ^ -/ / B U K 4 2 6 - 1OOA/B PowerMOS transistor 5bE T> INTERNATIONAL 7110fl2t 0044120 flSD I_ I GENERAL DESCRIPTION N-channel enhancement mode


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    PDF BUK426-1OOA/B 7110fl2t D0441EG OT199 -100A -100B BUK426-100B transistor BU 110 BUK426-100A

    BUK543

    Abstract: BUK543-60A BUK543-60B TTA10
    Text: PHILIPS INTERNATIONAL bSE D • 711DflSb ODbMlflb 54T ■ PHIN Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic Kill-pack


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    PDF BUK543-60A/B -SOT186 BUK543 DS10NÃ BUK543-60A BUK543-60B TTA10

    BUK452-100B

    Abstract: BUK452-100A T0220AB
    Text: PHILIPS INTERNATIONAL bSE D • 7110fl2b DDbHOBl SSI « P H I N Philips Semiconductors Product Specification PowerMOS transistor GEN ERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


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    PDF 7110fl2b BUK452-100A/B T0220AB BUK452-100B BUK452-100A T0220AB

    BUK443

    Abstract: BUK443-60A BUK443-60B TRANSISTOR C 557 B
    Text: PHILIPS INTERNATIONAL bSE ]> 711002b OObB^l Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies


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    PDF 711Dfi2b BUK443-60A/B OT186 BUK443 BUK443-60A BUK443-60B TRANSISTOR C 557 B

    TRANSISTOR P3

    Abstract: BUK427-400B philips kt
    Text: Philips Components D ata sheet status Product specification date of issue March 1991 PowerMOS transistor SbE PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channe! enhancem ent mode field-effect pow er transistor in a plastic full pack envelope. The device is intended fo r use in


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    PDF BUK427-400B DD44ma OT199 TRANSISTOR P3 BUK427-400B philips kt

    k 246 transistor fet

    Abstract: 100-P BUK571 BUK571-60A BUK571-60B K571 1e43
    Text: PHILIPS INTERNATIONAL 5fc,E D Philips Components • 711Dfi2b 324 ■ PHIN Data sheet B status Preliminary specification date of issue March 1991 Replaces BUK541-60A/B GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack


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    PDF BUK541-60A/B BUK571-60A/B BUK571 k 246 transistor fet 100-P BUK571-60A BUK571-60B K571 1e43