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    DIODE 100 6T Search Results

    DIODE 100 6T Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE 100 6T Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PD - 97759 IRG7RC10FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V IC = 9.0A, TC = 100°C Features • • • • • Low VCE on Zero VCE(on) temperature coefficient 3µs Short Circuit Capability Ultra Fast Soft Recovery Co-pak Diode


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    PDF IRG7RC10FDPbF EIA-481 EIA-541. EIA-481.

    GE Refrigerator Compressor

    Abstract: 400v 20A ultra fast recovery diode 2245-2
    Text: PD - 97759 IRG7RC10FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V IC = 9.0A, TC = 100°C Features • • • • • Low VCE on Zero VCE(on) temperature coefficient 3µs Short Circuit Capability Ultra Fast Soft Recovery Co-pak Diode


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    PDF IRG7RC10FDPbF EIA-481 EIA-541. EIA-481. GE Refrigerator Compressor 400v 20A ultra fast recovery diode 2245-2

    irg7ic

    Abstract: transistor IC 12A 400v IRG7
    Text: IRG7IC20FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V C IC = 8.0A, TC = 100°C tsc > 3 s, Tjmax = 150°C G VCE on typ. = 1.60V @ IC = 12A G E • • • • Air Conditioner Compressor Refrigerator Vacuum Cleaner


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    PDF IRG7IC20FDPbF O-220AB irg7ic transistor IC 12A 400v IRG7

    irg7ic

    Abstract: No abstract text available
    Text: IRG7IC23FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V C IC = 9.0A, TC = 100°C tsc > 3 s, Tjmax = 150°C G VCE on typ. = 1.60V @ IC = 18A G E • • • • Air Conditioner Compressor Refrigerator Vacuum Cleaner


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    PDF IRG7IC23FDPbF O-220AB irg7ic

    ci 4946

    Abstract: IRG7PH42UDPBF 4946 irg7ph42ud C-150 IRG7PH42UD-EP irg7ph42ud-e
    Text: PD - 97391B INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE ON trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM  Positive VCE (ON) temperature co-efficient


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    PDF 97391B IRG7PH42UDPbF IRG7PH42UD-EP O-247AD ci 4946 IRG7PH42UDPBF 4946 irg7ph42ud C-150 IRG7PH42UD-EP irg7ph42ud-e

    irg7ph35udpbf

    Abstract: irg7ph35 400v 20A ultra fast recovery diode 600v 20a IGBT 600v 20a IGBT driver ir igbt 1200V 40A P channel 600v 20a IGBT ultrafast n channel 600v 20a IGBT C-150 IRG7PH35UD
    Text: PD-96288 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE ON trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM  Positive VCE (ON) temperature co-efficient


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    PDF PD-96288 IRG7PH35UDPbF IRG7PH35UD-EP O-247AD irg7ph35udpbf irg7ph35 400v 20A ultra fast recovery diode 600v 20a IGBT 600v 20a IGBT driver ir igbt 1200V 40A P channel 600v 20a IGBT ultrafast n channel 600v 20a IGBT C-150 IRG7PH35UD

    ci 4946

    Abstract: IRG7PH42UD-EP irg7ph42ud-e IRG7PH42UDPBF
    Text: PD - 97391B INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE ON trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM  Positive VCE (ON) temperature co-efficient


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    PDF 97391B IRG7PH42UDPbF IRG7PH42UD-EP O-247AD ci 4946 IRG7PH42UD-EP irg7ph42ud-e

    IRGP4650D

    Abstract: IRGP4650DPBF irgp4650dp
    Text: IRGP4650DPbF IRGP4650D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V C C C IC = 50A, TC = 100°C tSC 5 s, TJ max = 175°C G VCE(on) typ. = 1.60V @ IC = 35A E n-channel Applications • Industrial Motor Drive


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    PDF IRGP4650DPbF IRGP4650D-EPbF O-247AC IRGP4650DPbF O-247AD IRGP4650D-EP IRGP4650DPbF/IRGP4650D-EPbF IRGP4650D irgp4650dp

    qmv695-1af5

    Abstract: qmv695 laser diode symbol schematic "low cost laser diode driver" NORTEL laser 120R A0685475 YA07 C33031 QMV6
    Text: YA07 Laser Diode Driver with Mean Power Control Data Sheet Features Mean power control Highly integrated; Minimal external components needed Bias current range: 5 mA to 100 mA Modulation current range: 5 mA to 80 mA Fully differential data input, PECL and CML compatible


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    PDF OC-12 qmv695-1af5 qmv695 laser diode symbol schematic "low cost laser diode driver" NORTEL laser 120R A0685475 YA07 C33031 QMV6

    ci 4946

    Abstract: CT4-200 irg7ph42udpbf C-150 IRG7PH42UD-EP
    Text: PD - 97391A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE ON trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM  Positive VCE (ON) temperature co-efficient


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    PDF 7391A IRG7PH42UDPbF IRG7PH42UD-EP O-247AD ci 4946 CT4-200 irg7ph42udpbf C-150 IRG7PH42UD-EP

    Untitled

    Abstract: No abstract text available
    Text: PD - 97391B INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE ON trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM  Positive VCE (ON) temperature co-efficient


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    PDF 97391B IRG7PH42UDPbF IRG7PH42UD-EP O-247AD

    IRGR4045D

    Abstract: No abstract text available
    Text: IRGR4045DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features •          IC  6.0A, TC = 100°C Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C


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    PDF IRGR4045DPbF Pa641 EIA-481 EIA-541. EIA-481. IRGR4045D

    IRG7PH46UDPBF

    Abstract: 600v 20a IGBT driver igbt 40A 600V P channel 600v 20a IGBT C-150
    Text: PD - 97498 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE ON trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM  Positive VCE (ON) temperature co-efficient


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    PDF IRG7PH46UDPbF IRG7PH46UD-EP O-247AD IRG7PH46UDPBF 600v 20a IGBT driver igbt 40A 600V P channel 600v 20a IGBT C-150

    IRGP4660

    Abstract: IRGP4660D-EPBF
    Text: IRGP4660DPbF IRGP4660D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V C IC = 60A, TC = 100°C C C tSC 5 s, TJ max = 175°C G VCE(on) typ. = 1.60V @ IC = 48A E n-channel Applications • Industrial Motor Drive


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    PDF IRGP4660DPbF IRGP4660D-EPbF O-247AC IRGP4660DPbF O-247AD IRGP4660D-EP IRGP4660DPbF/IRGP4660D-EPbF JESD22-A114) IRGP4660 IRGP4660D-EPBF

    Untitled

    Abstract: No abstract text available
    Text: PD - 97498A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE ON trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM  Positive VCE (ON) temperature co-efficient


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    PDF 7498A IRG7PH46UDPbF IRG7PH46UD-EP O-247AD

    Untitled

    Abstract: No abstract text available
    Text: PD-96288 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE ON trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM  Positive VCE (ON) temperature co-efficient


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    PDF PD-96288 IRG7PH35UDPbF IRG7PH35UD-EP O-247AD

    IRG7PH46UDPBF

    Abstract: 028005
    Text: PD - 97498A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE ON trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM  Positive VCE (ON) temperature co-efficient


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    PDF 7498A IRG7PH46UDPbF IRG7PH46UD-EP O-247AD 028005

    Untitled

    Abstract: No abstract text available
    Text: PD - 97269A IRGB4045DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • IC = 6.0A, TC = 100°C Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C


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    PDF 7269A IRGB4045DPbF O-220AB

    Untitled

    Abstract: No abstract text available
    Text: PD - 97269A IRGB4045DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • IC = 6.0A, TC = 100°C Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C


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    PDF 7269A IRGB4045DPbF O-220AB

    Untitled

    Abstract: No abstract text available
    Text: PD - 97403 IRG7PH30K10DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • Low VCE ON Trench IGBT Technology Low switching losses 10 µS short circuit SOA Square RBSOA 100% of the parts tested for ILM


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    PDF IRG7PH30K10DPbF O-247AC

    C-150

    Abstract: transistor IC 12A 400v
    Text: PD - 97347 IRGI4062DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • C Low VCE ON Trench IGBT Technology Low switching losses 5 µS short circuit SOA Square RBSOA 100% of the parts tested for ILM


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    PDF IRGI4062DPbF O-220 C-150 transistor IC 12A 400v

    Untitled

    Abstract: No abstract text available
    Text: PD - 97397 IRGI4064DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • Low VCE ON Trench IGBT Technology Low switching losses 5 µS short circuit SOA Square RBSOA 100% of the parts tested for ILM 


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    PDF IRGI4064DPbF O-220

    C-150

    Abstract: 80uh
    Text: PD - 97396 IRGI4056DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • Low VCE ON trench IGBT technology Low switching losses 5 µS short circuit SOA Square RBSOA 100% of the parts tested for ILM 


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    PDF IRGI4056DPbF O-220 C-150 80uh

    Untitled

    Abstract: No abstract text available
    Text: IRG7PH46UDPbF IRG7PH46UD-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE ON trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM  Positive VCE (ON) temperature co-efficient


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    PDF IRG7PH46UDPbF IRG7PH46UD-EP O-247AD