IR 92 0151
Abstract: DMV1500M DMV1500MF5
Text: DMV1500M DAMPER + MODULATION DIODE FOR VIDEO DAMPER MODULATION MAIN PRODUCT CHARACTERISTICS MODUL DAMPER IF AV 3A 6A VRRM 600 V 1500 V trr (max) 50 ns 135 ns VF (max) 1.4 V 1.65 V 1 2 3 1 • ■ ■ ■ ■ ■ ■ 3 Insulated TO-220AB (Bending option F5 available)
|
Original
|
PDF
|
DMV1500M
O-220AB
IR 92 0151
DMV1500M
DMV1500MF5
|
DMV1500H
Abstract: DMV1500HF5
Text: DMV1500H DAMPER + MODULATION DIODE FOR VIDEO DAMPER MODULATION MAIN PRODUCT CHARACTERISTICS MODUL DAMPER IF AV 3A 6A VRRM 600 V 1500 V trr (max) 50 ns 125 ns VF (max) 1.4 V 1.7 V 1 2 3 1 • ■ ■ ■ ■ ■ ■ 3 Insulated TO-220AB (Bending option F5 available)
|
Original
|
PDF
|
DMV1500H
O-220AB
DMV1500H
DMV1500HF5
|
IR 92 0151
Abstract: DMV1500M DMV1500MF5 damper
Text: DMV1500M DAMPER + MODULATION DIODE FOR VIDEO DAMPER MODULATION MAIN PRODUCT CHARACTERISTICS MODUL DAMPER IF AV 3A 6A VRRM 600 V 1500 V Trr (max) 50 ns 135 ns VF (max) 1.4 V 1.65 V 1 2 3 1 • ■ ■ ■ ■ ■ ■ 3 Insulated TO-220AB (Bending option F5 available)
|
Original
|
PDF
|
DMV1500M
O-220AB
IR 92 0151
DMV1500M
DMV1500MF5
damper
|
IR 92 0151
Abstract: DMV1500H DMV1500HF5
Text: DMV1500H DAMPER + MODULATION DIODE FOR VIDEO DAMPER MODULATION MAIN PRODUCT CHARACTERISTICS MODUL DAMPER IF AV 3A 6A VRRM 600 V 1500 V Trr (max) 50 ns 125 ns VF (max) 1.4 V 1.7 V 1 2 3 1 • ■ ■ ■ ■ ■ ■ 3 Insulated TO-220AB (Bending option F5 available)
|
Original
|
PDF
|
DMV1500H
O-220AB
IR 92 0151
DMV1500H
DMV1500HF5
|
702 TRANSISTOR smd
Abstract: SIEMENS AVR GENERATOR fire alarm abstract using thermistor and op-amp Phycomp 2238 Laser power supply abstract 2238 916 15636 3006p 205 Variable Resistor 2238-787-15636 phycomp 2322-702-60102 capacitor 0402 X7R 100NF 50V 10
Text: APPLICATION NOTE OM5811 minidil demo board for TZA3010/11/47 laser drivers covering 30-3200 Mb/s AN10191-01 TP97036.2/F5.5 Philips Semiconductors OM5811 minidil demo board for TZA3010/11/47 laser drivers covering 30-3200 Mb/s Application Note AN10191-01 Abstract
|
Original
|
PDF
|
OM5811
TZA3010/11/47
AN10191-01
TP97036
TZA3010/11/47
OM5811.
TZA3010,
TZA3011and
702 TRANSISTOR smd
SIEMENS AVR GENERATOR
fire alarm abstract using thermistor and op-amp
Phycomp 2238
Laser power supply abstract
2238 916 15636
3006p 205 Variable Resistor
2238-787-15636
phycomp 2322-702-60102
capacitor 0402 X7R 100NF 50V 10
|
Untitled
Abstract: No abstract text available
Text: DMV56 DAMPER + MODULATION DIODE FOR VIDEO MAIN PRODUCT CHARACTERISTICS DAMPER MODUL DAMPER IF AV 6A 6A VRRM 600 V 1500 V trr 50 ns 135 ns VF (max) 1.5 V 1.5 V 1 1 MODULATION 2 3 3 2 TO-220I (Bending option F5 available) FEATURES AND BENEFITS FULLKITIN ONE PACKAGE
|
Original
|
PDF
|
DMV56
O-220I
DMV56
56kHZ
DTV56
O-220I
|
IR 92 0151
Abstract: DMV1500L DMV1500LF5
Text: DMV1500L DAMPER + MODULATION DIODE FOR VIDEO DAMPER MODULATION MAIN PRODUCT CHARACTERISTICS MODUL DAMPER IF AV 3A 4A VRRM 600 V 1500 V trr (max) 50 ns 170 ns VF (max) 1.4 V 1.5 V 1 2 3 1 • ■ ■ ■ ■ ■ ■ 3 Insulated TO-220AB (Bending option F5 available)
|
Original
|
PDF
|
DMV1500L
O-220AB
IR 92 0151
DMV1500L
DMV1500LF5
|
DMV1500M
Abstract: IR 92 0151 DMV1500M7 DMV1500M7F5
Text: DMV1500M7 DAMPER + MODULATION DIODE FOR VIDEO DAMPER MODULATION MAIN PRODUCT CHARACTERISTICS MODUL DAMPER IF AV 3A 6A VRRM 700 V 1500 V trr (max) 55 ns 135 ns VF (max) 1.55 V 1.65 V 1 2 3 1 • ■ ■ ■ ■ ■ ■ ■ 3 Insulated TO-220AB (Bending option F5 available)
|
Original
|
PDF
|
DMV1500M7
O-220AB
DMV1500M
IR 92 0151
DMV1500M7
DMV1500M7F5
|
Untitled
Abstract: No abstract text available
Text: BSZ440N10NS3 G 3 Power-Transistor Product Summary Features V 9H J R 9H"[Z#$YMd , Y Q(@D9=9J546?B43 433?>F5BC9?> I9 )0 6 Q' 381>>5<>?B=1<<5F5< E=%IH9HDC%0
|
Original
|
PDF
|
BSZ440N10NS3
381B75à
931D9?
D1B75Dà
|
Untitled
Abstract: No abstract text available
Text: IPB031NE7N3 G TM 3 Power-Transistor Product Summary Features ?> Q#451<6?B89786B5AE5>3ICG9D389>71>4 3?>F5BD5BC V 9H /- J R 9H"[Z#$YMd +& Y I9 ) 6 QH35<<5>D71D5381B75HR 9H"[Z#@B?4E3D (&
|
Original
|
PDF
|
IPB031NE7N3
B53D96931D9?
CG9D389
381B75à
D5CD54
D1B75Dà
931D9?
|
Untitled
Abstract: No abstract text available
Text: IPB036N12N3 G 3 Power-Transistor Product Summary Features Q#451<6?B89786B5AE5>3ICG9D389>71>4 3?>F5BD5BC QH35<<5>D71D5381B75HR 9H"[Z#@B?4E3D & V 9H *( J R 9H"[Z#$YMd +&. Y I9 )0( 6 Q.5BI<?G?> B5C9CD1>35+9H"[Z#
|
Original
|
PDF
|
IPB036N12N3
381B75à
CG9D389
D5CD54
D1B75Dà
931D9?
D85BG9C5à
|
Untitled
Abstract: No abstract text available
Text: IPP037N08N3 G IPI037N08N3 G IPB035N08N3 G 3 Power-Transistor Product Summary Features Q#451<6?B89786B5AE5>3ICG9D389>71>4CI>3 B53 Q @D9=9J54D538>?<?7I6?B 3?>F5BD5BC V 9H 0( J R 9H"[Z#$YMd +&- Y I9 (
|
Original
|
PDF
|
IPP037N08N3
IPI037N08N3
IPB035N08N3
CG9D389
381B75à
D5CD54
D1B75Dà
931D9?
|
aK 9AA diode
Abstract: No abstract text available
Text: IPP100N08N3 G IPI100N08N3 G IPB097N08N3 G 3 Power-Transistor Product Summary Features Q#451<6?B89786B5AE5>3ICG9D389>71>4CI>3 B53 Q @D9=9J54D538>?<?7I6?B 3?>F5BD5BC V 9H 0( J R ,?>=1H,& 1&/ Y
|
Original
|
PDF
|
IPP100N08N3
IPI100N08N3
IPB097N08N3
CG9D389
381B75à
D5CD54
D1B75Dà
931D9?
aK 9AA diode
|
IPI024N06N3 G
Abstract: No abstract text available
Text: IPB021N06N3 G Ie\Q IPI024N06N3 G IPP024N06N3 G 3 Power-Transistor Product Summary Features Q#451<6?B89786B5AE5>3ICG9D389>71>4CI>3 B53 Q @D9=9J54D538>?<?7I6?B 3?>F5BD5BC V 9H .( J R ,?>=1H,& *&
|
Original
|
PDF
|
IPB021N06N3
IPI024N06N3
IPP024N06N3
CG9D389
381B75à
D5CD54
D1B75Dà
931D9?
IPI024N06N3 G
|
|
Untitled
Abstract: No abstract text available
Text: IPP139N08N3 G IPI139N08N3 G IPB136N08N3 G 3 Power-Transistor Product Summary Features V 9H Q#451<6?B89786B5AE5>3ICG9D389>7 0 R ,?>=1H,& Q(@D9=9J54D538>?<?7I6?B 3?>F5BD5BC J +&. I9 Y ,- 6 QH35<<5>D71D5381B75HR 9H"[Z#@B?4E3D (&
|
Original
|
PDF
|
IPP139N08N3
IPI139N08N3
IPB136N08N3
CG9D389
381B75à
D5CD54
D1B75Dà
931D9?
|
Untitled
Abstract: No abstract text available
Text: IPP070N08N3 G IPI070N08N3 G IPB067N08N3 G 3 Power-Transistor Product Summary Features Q#451<6?B89786B5AE5>3ICG9D389>71>4CI>3 B53 Q @D9=9J54D538>?<?7I6?B 3?>F5BD5BC V 9H 0( J R ,?>=1H,& .&/ Y
|
Original
|
PDF
|
IPP070N08N3
IPI070N08N3
IPB067N08N3
CG9D389
381B75à
D5CD54
D1B75Dà
931D9?
|
Untitled
Abstract: No abstract text available
Text: IPB054N06N3 G IPP057N06N3 G Ie\Q 3 Power-Transistor Product Summary Features Q#451<6?B89786B5AE5>3ICG9D389>71>4CI>3 B53 Q @D9=9J54D538>?<?7I6?B 3?>F5BD5BC V 9H .( J R ,?>=1H,& -&, Y I9 0( 6
|
Original
|
PDF
|
IPB054N06N3
IPP057N06N3
CG9D389
381B75à
D5CD54
D1B75Dà
931D9?
|
Untitled
Abstract: No abstract text available
Text: AIGaAs INFRARED EMITTING DIODE OPTOELECTRONICS F5G1 PACKAGE DIMENSIONS •—D—• w ' i— I— i E ! — !— The F5G1 is an 880nm LED en capsulated in a clear, wide angle, sidelooker package. T ± 1 s P a i l t i . Ç A G re e n C o lo r -.¿w: - 4 p e s c w p t io n
|
OCR Scan
|
PDF
|
880nm
ST1046
ST1042
ST1045
ST1043
ST1044
|
ST1036
Abstract: No abstract text available
Text: EU GaAs INFRARED EMITTING DIODE OPTOELECTRONICS F5F1 DESCRIPTION PA CKA G E DIMENSIONS E| * 1 E f The F5F1 is a 940nm LED encapsulated in a clear, wide angle, sidelooker package. i— 1— i — !— , rii rt II Black Color * Code -¡¡gF - J 2 . 61 SECTION X-X
|
OCR Scan
|
PDF
|
940nm
ST1037
ST1Q35
ST1036
ST1036
|
laser rise time
Abstract: lens laser diode NEC DIODE LASER nec laser diode CQF51
Text: Philips Components cqfsi _ J v_ BURIED HETEROJUNCTION InGaAsP LASER DIODE W ITH SINGLE MODE FIBRE PIGTAIL The C Q F51 is an InG aAsP buried heterojunction semiconductor laser diode. The device is designed for high-speed long distance, optical communication and data transmission.
|
OCR Scan
|
PDF
|
CQF51
laser rise time
lens laser diode
NEC DIODE LASER
nec laser diode
|
f5210s
Abstract: No abstract text available
Text: International IOR Rectifier pd-9.i 4o5b IR F5210S preliminary HEXFET Power MOSFET • Advanced Process Technology • Ultra Low On-Resistance • Surface Mount • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • P-Channel • Fully Avalanche Rated
|
OCR Scan
|
PDF
|
F5210S
-100V
4A55452
00253fci
f5210s
|
f5lc20u
Abstract: F5LC20 SF5LC20U C137C A45A
Text: □ -□ 3 . V'CX-Y- Super Fast Recovery Diode Twin Diode OUTLINE DIMENSIONS SF5LC20U Unit • mm Package I FTO-220 10 4>3.2- 200V 5A Date code na%i_ Type No. M i_ Polarity 4.5±a: 2.7±a ±0- 0181 F5LC20U 2.7±a: •trr3 5 n s 1 o u”3 m
|
OCR Scan
|
PDF
|
SF5LC20U
FTO-220
F5LC20U
J515-5
f5lc20u
F5LC20
SF5LC20U
C137C
A45A
|
Untitled
Abstract: No abstract text available
Text: E U AIGaAs INFRARED EMITTING DIODE F5G1 - t î Ef P - » The F5Q1 is an 880nm LED encapsulated in a clear, wide angle, sideiooker package. [-f- G re e n fri Color ¿fc- 3 I P Code T SCCÎION x -x LEAD PROFILE * Good apücaf to mechanical alignment SEATING
|
OCR Scan
|
PDF
|
880nm
ST1334
100mA
|
1RF530
Abstract: LA 4289 530-R
Text: 33 H ARRIS IR F530/531/532/533 1RF530R/531R/532R/533R N-Channel Power MOSFETs Avalanche Energy Rated* May 1992 Package Features T 0 -2 2 0 A B TOP VIEW • 12A and 14A, 80V - 100V • rDs on = 0.160 and 0.23fl • Single Pulse Avalanche Energy Rated* DRAIN
|
OCR Scan
|
PDF
|
F530/531/532/533
1RF530R/531R
IRF530,
IRF531,
IRF532,
IRF533
IRF530R,
IRF531R,
IRF532R
IRF533R
1RF530
LA 4289
530-R
|