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    DIODE, 6A05 Search Results

    DIODE, 6A05 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
    CUZ16V Toshiba Electronic Devices & Storage Corporation Zener Diode, 16 V, USC Visit Toshiba Electronic Devices & Storage Corporation
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    DIODE, 6A05 Price and Stock

    Rectron Semiconductor 6A05

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 6A05
    • 1 -
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    • 10000 $0.0986
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    Rectron Semiconductor 6A05-T

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 6A05-T
    • 1 -
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    • 10000 $0.0986
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    Puls Gmbh YR2.DIODE

    Redundancy Module, 10-60VDC, 20A, Dual Input
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com YR2.DIODE 6
    • 1 $126
    • 10 $126
    • 100 $126
    • 1000 $126
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    Puls Gmbh YRM2.DIODE

    Dual Redundancy Module, 20A, 24-48VDC, 2 Inputs, 1 Output, Screw Terminals, IP20
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com YRM2.DIODE 5
    • 1 $162
    • 10 $162
    • 100 $162
    • 1000 $162
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    Phoenix Contact QUINT-DIODE/40

    Redundancy module QUINT-DIODE/40
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com QUINT-DIODE/40
    • 1 $132.14
    • 10 $110.06
    • 100 $102.47
    • 1000 $102.47
    • 10000 $102.47
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    Find more DIODE, 6A05 price and stock on Findchips.com

    DIODE, 6A05 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SR506 Diode

    Abstract: diode 6A 1000v SM4007 Diode Diode SR360 diode her307
    Text: Room I, Floor 4, 13 Yip Fung Street, Hong Kong Tel: +86 769 8118 8110 or +852 8106 7033 Fax: +852 8106 7099 Kingtronics Diode & Rectifier List Diode Rectifier Diode Rectifier M7 SMD4001-4007 Diode SR560 (5A 60V) Bulk RoHS. DO-27 S1A -S1M Diode UF4004 (1А 400V) Bulk RoHS. DO-41


    Original     		PDF SMD4001-4007) SR560 DO-27 UF4004 DO-41 UF4007 10A10 LL4148 FR101-FR107 SR506 Diode diode 6A 1000v SM4007 Diode Diode SR360 diode her307

    2510W

    Abstract: RS1M diode
    Text: Email: info@kingtronics.com Web: www.kingtronics.com Tel: +86 769 81188110 or +852 8106 7033 Fax: +852 8106 7099 Kingtronics Diode & Bridge Rectifier List UL ISO Manufacturer since 1990 Diode Recitifer M7 DO-214AC (1A 1000V)SMA Bridge Rectifier ABS2-ABS6; ABS8; ABS10


    Original     		PDF DO-214AC ABS10 LL4148 MB10S SM4007 MB10M DB101-DB107; DB151-DB157 DB101S-DB107S; 2510W RS1M diode

    6A10 DIODE

    Abstract: 6A4 DIODE diode rl207 diode P600A diode RL205 p600m DIODE diode 6a6 diode 6a4 p600b diode DIODE 6A10
    Text: Axial Diode Series DIODE RECTIFIERS GENERAL PURPOSE Maximum Peak TYPE Reverse Maximum Average Rectified Maximum Maximum Forward Peak Reverse Current at Half-wave Resistive Surge Current Current at load 50HZ Voltage 50HZ PRV and Maximum Forward Voltage at TA=25°C


    Original     		PDF 1N4001 DO-41 1N4002 1N4003 1N4004 1N4005 DO-15 6A10 DIODE 6A4 DIODE diode rl207 diode P600A diode RL205 p600m DIODE diode 6a6 diode 6a4 p600b diode DIODE 6A10

    OZ 9983

    Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
    Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —


    Original     		PDF MBRB3030CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 OZ 9983 mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45

    1n5822 trr

    Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
    Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50

    mur1650

    Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
    Text: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and


    Original     		PDF MBRB1045 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 mur1650 T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount

    FE16B

    Abstract: mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent
    Text: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —


    Original     		PDF MBRP60035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 FE16B mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent

    PK MUR 460

    Abstract: pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360
    Text: MBR340 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,


    Original     		PDF MBR340 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 PK MUR 460 pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360

    MR2835S equivalent

    Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
    Text: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


    Original     		PDF MBR6045PT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MR2835S equivalent A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502

    equivalent components of diode 1N5399

    Abstract: diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode
    Text: MBR6045WT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


    Original     		PDF MBR6045WT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 equivalent components of diode 1N5399 diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode

    Untitled

    Abstract: No abstract text available
    Text: Formosa MS Axial Leaded General Purpose Rectifiers 6A05 THRU 6A10 List List. 1 Package outline. 2


    Original     		PDF MIL-STD-750D METHOD-1036 JESD22-A102 METHOD-1051 METHOD-4066-2 1000hrs. METHOD-1021

    6A10 DIODE

    Abstract: diode 6a10 6A4 DIODE diode 6A4 diode 6a6 6A4 rectifier diode 6A05 DIODE P600 diode 1038 6a1 marking+6a2+smd
    Text: Formosa MS Silicon Rectifier 6A05 THRU 6A10 List List. 1 Package outline. 2 Features. 2


    Original     		PDF MIL-STD-750D METHOD-1036 JESD22-A102 METHOD-1051 METHOD-1056 METHOD-4066-2 6A10 DIODE diode 6a10 6A4 DIODE diode 6A4 diode 6a6 6A4 rectifier diode 6A05 DIODE P600 diode 1038 6a1 marking+6a2+smd

    6A1 diode

    Abstract: No abstract text available
    Text: Silicon Rectifier Formosa MS 6A05 THRU 6A10 List List. 1 Package outline. 2 Features. 2


    Original     		PDF MIL-STD-750D METHOD-1051 METHOD-1056 METHOD-4066-2 1000hrs. METHOD-1038 6A1 diode

    Untitled

    Abstract: No abstract text available
    Text: Formosa MS Axial Leaded General Purpose Rectifiers 6A05 THRU 6A10 List List. 1 Package outline. 2


    Original     		PDF -A102 MIL-STD-750D METHOD-1051 METHOD-1056 METHOD-4066-2 1000hrs. METHOD-1021

    U840 diode motorola

    Abstract: motorola u860 diode DIODE u1560 b2045 aka u1560 DIODE u860 diode u1560 diode U3J U820 diode fast recovery diode ses5001
    Text: DL151/D Rev. 3, Nov-2000 Rectifier Device Data Rectifier Device Data DL151/D Rev. 3, Oct–2000  SCILLC, 2000 Previous Edition  1995 “All Rights Reserved’’ This book presents technical data for ON Semiconductor’s broad line of rectifiers. Complete specifications are provided in


    Original     		PDF DL151/D Nov-2000 r14525 U840 diode motorola motorola u860 diode DIODE u1560 b2045 aka u1560 DIODE u860 diode u1560 diode U3J U820 diode fast recovery diode ses5001

    n539

    Abstract: 6A10 DIODE diode 2a05 FRI57 diode 6A10 Diode IN5398 N4003 diode k5 10-16 diode 1n5392 N5398
    Text: DIODE RECTIFIERS GENERAL PURPOSE /1A • 1.SA • 2A • 3A • 8A MAXIMUN Peak Reverse Voltage PRV Max Avg Rect Current @ Half-Wave Res Load 60Hz L @Ta 1N4001 1N4002 ÌN4003 1N4004 1N4005 1N400Ó 1N4007 50 100 200 400 600 800 1000 10 1.0 1.0 Ì0 1.0 1.0


    OCR Scan     		PDF 1N4001 1N4002 N4003 1N4004 1N4005 1N400Ó 1N4007 1N5392 1N5393 1N5394 n539 6A10 DIODE diode 2a05 FRI57 diode 6A10 Diode IN5398 diode k5 10-16 diode 1n5392 N5398

    6A4 DIODE

    Abstract: AX-52 diode diode 6a4 diode 6a6 diode rL257 A106 6A1 diode 6A6 DIODE diode 6A2 1N4002
    Text: DIODE RECTIFIERS • 1.0A THRU 6.0A • 50V THRU 1000V CURRENT A 1.0 1.5 3.0 3.0 6.0 @ TEMP "C 25 25 25 25 25 SURGE (A) 50 50 200 150 400 50V 1N4001 J-05 RL251 1N5400 6A-05 100 V 1N4002 0-1 RL252 1N5401 6A-1 200V 1N4003 J-2 RL253 1N5402 6A-2 400V 1N4004


    OCR Scan     		PDF 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 DO-41 DO-15 RL251 6A4 DIODE AX-52 diode diode 6a4 diode 6a6 diode rL257 A106 6A1 diode 6A6 DIODE diode 6A2

    SDL-5401-G1

    Abstract: SDL-5422-H1 SDL laser dbr SDL-5421-G1 SDL 5700 SDL-5431-G1 sdl 5400 SDL laser diode sdl-5400 SDL-5400-G1
    Text: « ê-' •e cu E c£ S E R I E f i I • ■■■■':• 2 S ca Hw *oos %£ UP TO 200 mW CW SINGLE MODE GaAIAs LASER DIODES High power in a diffraction limited, single spatial mode beam is provided by the SDL-5400 Series laser diode. The index guided laser emits in a


    OCR Scan     		PDF TEM00 SDL-5400 SDL-543le 6A05A: SDL-5401-G1 SDL-5422-H1 SDL laser dbr SDL-5421-G1 SDL 5700 SDL-5431-G1 sdl 5400 SDL laser diode SDL-5400-G1

    1N540I

    Abstract: No abstract text available
    Text: CRI MSON SEMI CONDUCTOR INC ^ D Ejssm O Tb 000D343 2514096 C R Ï M S O N SEMI C O N D U C T O R INC • 99D 00343 ~— D T - à f ~ f r r ! ' . i DIODE RECTIFIERS • 1.0A THRU6.0A • 50V THRU 1000V CURRENT A 1.0 1.5 3.0 3.0 6,0 @ TEMP *C 25 25 25 25 25


    OCR Scan     		PDF 000D343 1N40O1 RL251 1N5400 1N4002 RL252 1N540I 1N4003 RL253 1N5402 1N540I

    DIODE IN4007

    Abstract: IN4005 IN5406 diode IN4007 Diode IN4006 DIODE in4005 IN4006 IN5406 IN4007 DIODE diode in5406
    Text: CRIMSON SEMI CON DUCTOR INC ' ^ 2 5 1 4 0 9 6 C R I M S O N S E M I C O N D U C T O R INC _ 99D 00343 — d DE | SSlMGTb □□0D343 0 "J- - r - à f r i . ' i ' • DIODE R E C T IF IE R S • 1.0ATHRU 6.0A • 50V THRU 1000V CURRENT A 1.0 1.5 3 .0 3 .0


    OCR Scan     		PDF 55mmb 000D3M3 1N4Q01 RL251 1N5400 1N4002 RL252 1N540I 1N4003 RL253 DIODE IN4007 IN4005 IN5406 diode IN4007 Diode IN4006 DIODE in4005 IN4006 IN5406 IN4007 DIODE diode in5406

    SDL laser diode manual

    Abstract: SDL-3470-S SDL-3490-S sdl 3450 SDL-3450-S SDL-3450 SDL-3490 SDL3450S SDL3470S SDL LASER
    Text: 20/15/10WCW GaAIAs LINEAR ARRAY LASER DIODES I l l Features Up to 20 W cw Optical Power Monolithic Linear Array High Efficiency Quantum Well Structure < 3 nm Spectral W idth 797-810 nm Wavelength The high cw optical power and linear array form at provided by the SDL-3400 Series


    OCR Scan     		PDF 20/15/10WCW SDL-3400 SDL-3490 SDL-3450 SDL-3470 6A05A; SDL laser diode manual SDL-3470-S SDL-3490-S sdl 3450 SDL-3450-S SDL-3450 SDL-3490 SDL3450S SDL3470S SDL LASER

    Laser SDL 980

    Abstract: Laser SDL
    Text: M Ë ¡3 m S E R I E S t 03 980 nmr 150 mW CW InGaAs LASER DIODES 3 le y Features 980 nm Output Single Transverse Mode 150 mW cw Power Proven High Reliability Demonstrated High Coupling Effciency Erbium-Doped Fiber Amplifier Pumps Diffraction Limited Beam


    OCR Scan     		PDF SDL-6500 6A05A; Laser SDL 980 Laser SDL

    SDL-3450

    Abstract: sdl 3450 SDL-3460-P6 SDL laser diode manual SDL3460P6 SDL-3450-P5 SDL-7470-P5 SDL3450P5 SDL-3460 SDL3450P6
    Text: 5 E 3» « E 26 S E R I E jlj 1 “* D c. - W B » [CO HIGH POWER FIBER-COUPLED LINEAR ARRAY LASER DIODES Key Features « The high c w pow er, high brig htne ss and fiber ou tput o f the S D L -34 00/6 400 /740 0 Series enables Up to 16 W cw Optical Power


    OCR Scan     		PDF SDL-3490-P5 SDL-7470-P5 6A05A; 3203B SDL-3400/6480 0GG03 SDL-3450 sdl 3450 SDL-3460-P6 SDL laser diode manual SDL3460P6 SDL-3450-P5 SDL-7470-P5 SDL3450P5 SDL-3460 SDL3450P6

    SDL-3245-J5

    Abstract: SDL-3231-G7 SDL-3230 SDL-3235-J5 L-3245 sdl 3000 series SDL-3233-HD L-3253-H SDL3231G7 SDL3235
    Text: 50/60/100 WQCW LINEAR ARRAYS, 100-5000 W QCW STACKED ARRAYS Up to 2000 mJ Energy/Pulse 10 ¡j s -1 ms Pulse Width Monolithic Linear or Multi-Layer 2-D Stack High Efficiency MOCVD Quantum Well Design 20% Duty Factor Versions Lensed Versions Ideal as efficient optical pumps for solid state la­


    OCR Scan     		PDF L-3200 A4733T4 SDL-3245-J5 SDL-3231-G7 SDL-3230 SDL-3235-J5 L-3245 sdl 3000 series SDL-3233-HD L-3253-H SDL3231G7 SDL3235