ST diod
Abstract: Diode IOR 10 dc
Text: | . I PD- 5041 In terna tional TOR Rectifier preliminary CPV364M4 U IGBT SIP MODULE UltraFast IGBT Features • • • • Fully isolated printed circu it board m ount package S w itch in g-lo ss rating includes all "tail" losses HEXFRED so ft u ltra fa st diod es
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CPV364M4
ST diod
Diode IOR 10 dc
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10SC4M
Abstract: d10s
Text: S 'a v S * — / V J T v o m K Schottky Barrier Diode Twin Diod • O U T L IN E D IM E N S IO N S D10SC4MCR 40V 10A ■ R A TIN G S A bsolute Maximum R atings II g mn Item f ' o ' ci|j ?jm/It Operating Junction Temperature -tt A M M W :!±. Maximum Reverse Voltage
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D10SC4MCR)
10SC4M
d10s
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Untitled
Abstract: No abstract text available
Text: 2SJ543 Silicon P Channel MOS FET High Speed Power Switching HITACHI Features • Low on-resistance Rds oii = 0.042i2 typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline T O -2 2 0 A B 1. G ate 2. Drain (Flange) 3. S ource
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2SJ543
042i2
ADE-208-652B
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Untitled
Abstract: No abstract text available
Text: 2SJ529 L ,2SJ529(S) Silicon P Channel MOS FET High Speed Power Switching HITACHI ADE-208-654A (Z) 2nd. Edition June 1, 1998 Features • Low on-resistance R ds(oii) = 0.12 £2 typ. • 4 V gete drive devices • High speed switching Outline D P A K -2 I I
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2SJ529
ADE-208-654A
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PDF
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Untitled
Abstract: No abstract text available
Text: CA3140, CA3140A h a r ® J S E M I C O N D U C T O R • M M ■ 4 .5 MHz, BiMOS Operational Amplifier November 1996 with M OSFET Input/Bipolar Output Features Description • MOSFET Input Stage The CA3140A and CA3140 are integrated circuit operational ampli
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CA3140,
CA3140A
CA3140A
CA3140
-10pA
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Untitled
Abstract: No abstract text available
Text: HbflbBEb G0Dlb77 OS'i H I X Y d ix y s Thyristor Modules MCC132 iTAV= 2 x 130 A Thyristor/Diode Modules MCD132 vRRM= 600-1800 v Vr w V o *. V Vm Vmm V Type Version 1 Version 1 700 900 1300 1500 1700 1900 600 800 1200 1400 1600 1800* M C C 132-06io1 M C C 132-06io1
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G0Dlb77
MCC132
MCD132
132-06io1
132-12io1
132-14io1
132-16io1
MCD132-06Â
MCD132-06Ã
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t25000
Abstract: QM10HB-2H
Text: MITSUBISHI TRANSISTOR MODULES QM10HB-2H DRIVE USE FOR HIGH POWER TRANSISTOR _ INSULATED TYPE 1 j j QM10HB-2H • lc Collector c u rre n t. 10A • V cex Collector-em itter v o lta g e . 1000V j
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QM10HB-2H
E80276
E80271
t25000
QM10HB-2H
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PDF
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baco 23e01
Abstract: C21AH20 23E01D CEE24 baco IEC 947 EN60947 23E10D BX0500 23E01 S20SA10
Text: Leverantör • Beläget i Strasbourg, Frankrike • Grundat 1919 • Ca. 800 anställda www.oemautomatic.se 12:2 Strömställare Ø22,5 mm sid 12:4 Kontaktmoduler sid 12:9 Joystick sid 12:10 Signallampor sid 12:12 Märkskyltar sid 12:14 Tryckknappslådor
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A/400V
A/24V
22L10
22L01
22P10
22P01
baco 23e01
C21AH20
23E01D
CEE24
baco
IEC 947 EN60947
23E10D
BX0500
23E01
S20SA10
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PDF
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LB27
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES QM200DY-2HB HIGH POWER SWITCHING USE INSULATED TYPE QM200DY-2HB • 1C Collector cu rre n t. 200A • V cex Collector-em itter vo lta g e • hFE DC current g a in . 750
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QM200DY-2HB
E80276
E80271
125cC
LB27
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MBRF1045/D SEMICONDUCTOR TECHNICAL DATA SW ITCH MODE Schottky Power R ectifier M BRF1045 The S W IT C H M O D E P ow er R ectifier em p lo ys the S cho ttky B arrier p rincip le in a large area m e ta l-to -s ilic o n po w e r diode. S ta te - o f- th e - a r t ge o m e try fea tu res
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MBRF1045/D
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM10MD-12H MEDIUM POWER SWITCHING USE INSULATED TYPE CM10MD-12H t/ • ' X lili — li, W sm * \ mM 1 '1C. 10A 1V c e s . 600V
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CM10MD-12H
E80276
E80271
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CA3080T
Abstract: ed 3b diod a 3140 12 diod full wave bridge rectifier ic BA 10B FULL WAVE RECTIFIER a3140 CA3130 ica ca3130 ca 3140a a3140 equivalent
Text: CA3140, CA3140A Semiconductor September 1998 4.5MHz, BiMOS Operational Amplifier with MOSFET Input/Bipolar Output The CA3140A and CA3140 are integrated circuit operational am plifiers that com bine the advantages of high voltage PM O S transistors with high voltage bipolar transistors on a single
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CA3140,
CA3140A
CA3140A
CA3140
CA3080T
ed 3b diod
a 3140
12 diod full wave bridge rectifier ic
BA 10B FULL WAVE RECTIFIER
a3140
CA3130
ica ca3130
ca 3140a
a3140 equivalent
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dkt4
Abstract: No abstract text available
Text: SAKR-D SAKR Screw Clamp 32/35 mm DIN-Rail Terminals Disconnect DKT 4 DKT 4 V w ith S tB te s t p o in ts DLS 2 # H B \W . É 1 r £T TS Dimensions W id th /L e n g th /H e ig h t m m in. W ith TS 3 5 x 7 .5 w W ith TS 32 m m (in.) Insulation s trip p in g length
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1N4007
dkt4
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PDF
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2SK1818-MR
Abstract: No abstract text available
Text: 2SK1818-MR FUJI POWER MOS-FET N-CHANNEL ENHANCEMENT TYPE MOS-FET F-Y SERIES I Features • O utline Draw ings Include fast recovery diode >Hign voltage Low driving power I A pp licatio n s Motor controllers Inverters Chcppors I Max. Ratings and Characteristics
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2SK1818-MR
SC-67
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Untitled
Abstract: No abstract text available
Text: International ¡^Rectifier_ HEXFET Power MOSFET P D -9.1271 IRFD214 Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements V d ss = 2 5 0 V ^ D S o n = 2 . 0 ß
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IRFD214
DQ2244S
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DN007
Abstract: 15KV IEC1000-4-2 IFC1000-4-2 Zener Diode LF marking vp130
Text: C A L I F O R N I A M IC R O D E V IC E S ►► ► ► ► PAC DN007 18 C H A N N EL ESD PROTECTION ARRAY F eatu res A p p lic a tio n s • • • • Parallel printer port protection • ESD protection for sensitive electronic equipment. 18-channel ESD protection
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DN007
18-channel
24-pin
DN007â
DN007
15KV
IEC1000-4-2
IFC1000-4-2
Zener Diode LF marking
vp130
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PDF
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A0651
Abstract: MA2401 AX. A431
Text: HYBRID I.C.s “H i-Net” Diode Arrays im H ig h - s p e e d s w it c h i n g d io d e arrays a n d h ig h v o lt a g e - w it h s l a n d C O N ' s s t a n d a n d se ries. T h e y are c o m b i n e d d e c im a l s yste m s H ig h -s p e e d general e le c tro n ic
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LA0656
LA0657
A0432
ZHMA2401
MA2401
ZHMA2402
MA2402
A0651
MA2401
AX. A431
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PDF
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Untitled
Abstract: No abstract text available
Text: HIP6017 Semiconductor Advanced PWM and Dual Linear Power Control April 1998 Features Description • Provides 3 Regulated Voltages T he H IP 60 17 provides the po w e r con tro l and protection for th re e o u tp u t volta ge s in high -perform a nce m icro proce ssor
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HIP6017
HIP6017
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ML8204AE
Abstract: ML8205 ML8204 CM3215
Text: « • V H T E M L 8 2 0 4 /M L8 2 0 5 L . T o n e R in g e r s APR IL 1983 Features Pin Connections • • • • • • Designed fo r tele ph on e bell replacem ent Low cu rre n t drain Sm all size “ m in id ip ” package A d ju sta b le 2-frequency tone
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ML8204)
ML8205)
ML8204
ML8205
ML8204
ML8205
ML8204.
ML8204/ML8205
ML8204/5
ML8204AE
CM3215
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PDF
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Untitled
Abstract: No abstract text available
Text: TRIPLE IN D E P E N D E N T LOGIC IN TER FAC ED HALF BRIDGES EB04 M I C R 0 T I C H N 0 L 0 6 V HTTP://WWW.APEXMICROTECH.COM 800 546-APEX (800) 546-2739 PRELIMINARY FEATURES • • • • • COMPATIBLE WITH PWM FREQUENCIES UP TO 50KHZ 10.8V TO 50V MOTOR SUPPLY
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546-APEX
50KHZ
EB04U
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PDF
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IC 723 voltage regulator
Abstract: CA723CE equivalent application IC 723 voltage regulator IC 723 voltage regulator applications CA723CE CA723CT voltage regulator IC 723
Text: S H A R R IS Voltage Regulators Adjustable from 2V to 37V at Output Currents Up to 150m A W ithout External Pass Transistors Features Description • Up to 150mA O utput Current The CA723 and CA723 are silicon monolithic integrated circuits designed for service as voltage regulators at output voltages
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150mA
CA723
100mA!
IC 723 voltage regulator
CA723CE equivalent
application IC 723 voltage regulator
IC 723 voltage regulator applications
CA723CE
CA723CT
voltage regulator IC 723
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PDF
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1000V diod
Abstract: irgph30k IRG4PH30K br a55 IRGPH30M
Text: PD -9.1580 IRG4PH30K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high
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IRG4PH30K
1000V diod
irgph30k
IRG4PH30K
br a55
IRGPH30M
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M-88128
Abstract: M8812 "isolated switching" circuit BY431F M2296 M3120
Text: Philips Components by43if _ v._ FAST-RECOVERY, ELECTRICALLY-ISOLATED RECTIFIER DIODES Glass-passivated, double-diffused re c tifie r diodes in full-p ack plastic envelopes, fea turin g fast reverse recovery tim es and non-snap o ff soft) recovery characteristics. T h e ir electrical isolation makes them
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by43if
OT-186
11-Tj
m3120
111in
M88-1281/CP
M-88128
M8812
"isolated switching" circuit
BY431F
M2296
M3120
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PDF
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irg4bc40u
Abstract: transistor IR 840 ED50I
Text: PD - 9.1456D IRG4BC40U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter
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1456D
IRG4BC40U
O-220AB
O-220AB
irg4bc40u
transistor IR 840
ED50I
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