Untitled
Abstract: No abstract text available
Text: DIM400NSM33-F000 Single Switch IGBT Module Replaces DS5883-3 DS5883-4 October 2011 LN28811 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand High Thermal Cycling Capability Soft Punch Through Silicon VCES VCE(sat) * (typ) IC (max) IC(PK)
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DIM400NSM33-F000
DS5883-3
DS5883-4
LN28811)
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Untitled
Abstract: No abstract text available
Text: DIM400NSM33-F000 Single Switch IGBT Module DS5883-1.0 March 2006 FEATURES • 10µs Short Circuit Withstand • Soft Punch Through Silicon • Lead Free construction • Isolated MMC Base with AlN Substrates • High Thermal Cycling Capability KEY PARAMETERS
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DIM400NSM33-F000
DS5883-1
LN24535)
6500nsibility
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DIM400NSM33-F000
Abstract: 60749
Text: DIM400NSM33-F000 Single Switch IGBT Module DS5883-2.1 November 2008 LN26439 FEATURES 10µs Short Circuit Withstand Soft Punch Through Silicon Lead Free construction KEY PARAMETERS V CES V CE(sat) * (typ) IC (max) I C(PK) (max) 3300V 2.8 V 400A 800A *(measured at the power busbars and not the auxiliary terminals)
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DIM400NSM33-F000
DS5883-2
LN26439)
DIM400NSM33-F000
60749
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ge traction motor
Abstract: DIM400NSM33-F000 DIM400NSM33 DIM400N dim400nsm33-f
Text: DIM400NSM33-F000 Single Switch IGBT Module DS5883-2.0 April 2007 FEATURES • 10µs Short Circuit Withstand • Soft Punch Through Silicon • Lead Free construction • Isolated MMC Base with AlN Substrates • High Thermal Cycling Capability KEY PARAMETERS
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DIM400NSM33-F000
DS5883-2
LN25241)
ge traction motor
DIM400NSM33-F000
DIM400NSM33
DIM400N
dim400nsm33-f
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DIM400NSM33-F000
Abstract: DIM400NSM33-F DIM400NSM33
Text: DIM400NSM33-F000 Single Switch IGBT Module Replaces DS5883-3 DS5883-4 October 2011 LN28811 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand High Thermal Cycling Capability Soft Punch Through Silicon VCES VCE(sat) * (typ) IC (max) IC(PK)
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Original
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DIM400NSM33-F000
DS5883-3
DS5883-4
LN28811)
DIM400NSM33-F000
DIM400NSM33-F
DIM400NSM33
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DCR370T
Abstract: DCR370T18 DCR1560F26 DCR1560F drd2960y40 alsic 105 DCR1710F18 DCR650G34 DCR2760V DRD850D34
Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors Choppers, dual switches, half bridges and single switches 2 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half bridges and single switches
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4500Vee
DS5766-4.
DCR370T
DCR370T18
DCR1560F26
DCR1560F
drd2960y40
alsic 105
DCR1710F18
DCR650G34
DCR2760V
DRD850D34
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2sd315ai
Abstract: 2sc0108t bi-directional switch IGBT driver 2SC0435T 2SD106AI 2SD106Ai-17 2sc0108 2sc0435 CT-Concept igbt trafo drivers
Text: AN 5946 Driving Dynex High Power IGBT modules with Concept Gate Drives Application Note AN5946-2.0 September 2009 LN26854 Author: Dinesh Chamund Introduction Dynex Semiconductor manufactures a variety of IGBT modules ranging from 1200V to 6500V and 100A to 2400A.
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AN5946-2
LN26854
2sd315ai
2sc0108t
bi-directional switch IGBT driver
2SC0435T
2SD106AI
2SD106Ai-17
2sc0108
2sc0435
CT-Concept
igbt trafo drivers
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