IXTH110
Abstract: 851 36 RG 16 26 ixth110n25t IXTD110N25T-8W as001 A114B dimensions
Text: Preliminary Technical Information Trench Gate Power MOSFET Die IXTD110N25T-8W VDSS = 250V N-Channel Enhancement Mode Die Outline Notes: 1. Die Thickness: 200 ± 25 m 2. Die Size Tolerance: ± 50 μm 3. Top Bonding Pad Metal: 30 KÅ nominally thick Al 4. Back Metal: 3 layers of Ti, Ni & Au;
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IXTD110N25T-8W
22-A114-B
AS0011.
110N25T
1-08-A
IXTH110
851 36 RG 16 26
ixth110n25t
IXTD110N25T-8W
as001
A114B dimensions
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Die Attach epoxy stamping
Abstract: 60022 pressure low die attach coefficient of thermal expansion of thermal conductive pressure sensitive adhesive
Text: Application Note Handling Gallium Arsenide Die Rev 2 INTRODUCTION Gallium arsenide die have physical properties that require special care in assembly to ensure high yields and good reliability. A few simple precautions in the die mounting and wire bonding operations
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LP0701
Abstract: No abstract text available
Text: Supertex inc. LP0701 Die Specification Pad Layout 1 2 3 0,0 Backside: Drain Die Specifications Die Dimensions Device Length1 Width1 Thickness (mils) Back Side Metal 50 70 11 ± 1.5 None (mils) LP0701 (mils) Back Side Bonding Pad Material Drain Al/Cu/Si
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LP0701
LP0701
A031110
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MAX3970
Abstract: No abstract text available
Text: Application Note: HFAN-8.0.1 Rev.1; 04/08 Understanding Bonding Coordinates and Physical Die Size Maxim Integrated Products Understanding Bonding Coordinates and Physical Die Size MAX3970 3 1 Introduction When calculating pad coordinates, there is often confusion between the die size specified in the data
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MAX3970
HF98Z
MAX3970
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LND150
Abstract: No abstract text available
Text: Supertex inc. LND150 Die Specification Pad Layout 2 3 1 0,0 Backside: Source Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 30 30 11 ± 1.5 None 1 (mils) LND150 1 (mils) Back Side Bonding Pad Material Source Voltage
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LND150
LND150
A031110
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siemens matsua kondensator
Abstract: Siemens gleichrichter MKK-DC
Text: Leistungselektronik wird zunehmend integriert Mehr Power im System Die elektronische Revolution findet nicht nur in der digitalen Welt statt; für die Zukunft mindestens genauso wichtig sind die Herausforderungen beispielsweise an die Leistungselektronik. Das beweist der derzeitige Boom im Power-Bereich. Einer der
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Untitled
Abstract: No abstract text available
Text: Application Note Switch Die Measurement Fixture Rev 0 RELEVANT PRODUCTS • calibration structure and the other 24 elements are used to measure die. Figure 1 illustrates a measurement element for a single pole, double throw SPDT switch die. All ANADIGICS Switch Die
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leistungs dioden siemens
Abstract: Siemens Electromechanical Components Siemens gleichrichter ferritkerne thyristor eupec
Text: Leistungselektronik wird zunehmend integriert Mehr Power im System Die elektronische Revolution findet nicht nur in der digitalen Welt statt; für die Zukunft mindestens genauso wichtig sind die Herausforderungen beispielsweise an die Leistungselektronik. Das beweist der derzeitige Boom im Power-Bereich. Einer der
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2N6660
Abstract: 2N6660-1
Text: 2N6660 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 30 30 8.0 ± 1.0 Au 1 (mils) 2N6660 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain
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2N6660
2N6660
A022009
2N6660-1
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VN2222NC
Abstract: a0513
Text: VN2222NC Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness (mils) Back Side Metal 70 85 11 ± 1.5 Au 1 (mils) VN2222NC 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain
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VN2222NC
VN2222NC
A051309
a0513
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VN2224
Abstract: No abstract text available
Text: VN2224 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness (mils) Back Side Metal 70 85 11 ± 1.5 Au 1 (mils) VN2224 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain
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VN2224
VN2224
A040609
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TN0604
Abstract: No abstract text available
Text: TN0604 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 65 50 11.0 ± 1.5 Au 1 (mils) TN0604 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain
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TN0604
TN0604
A050409
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VN0808
Abstract: No abstract text available
Text: VN0808 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 30 30 8.0 ± 1.0 Au 1 (mils) VN0808 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain
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VN0808
VN0808
A022009
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VN0550
Abstract: No abstract text available
Text: VN0550 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness (mils) Back Side Metal 37 37 11 ± 1.5 Au 1 (mils) VN0550 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain
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VN0550
VN0550
A020309
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LP0701
Abstract: No abstract text available
Text: LP0701 Die Specification Pad Layout 1 2 3 0,0 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness (mils) Back Side Metal 50 70 11 ± 1.5 None 1 (mils) LP0701 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain
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LP0701
LP0701
A013009
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TP5322
Abstract: No abstract text available
Text: TP5322 Die Specification Pad Layout 1 2 0,0 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 30 56 8.0 ± 1.0 Au 1 (mils) TP5322 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain
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TP5322
TP5322
A020309
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TN2130
Abstract: No abstract text available
Text: TN2130 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 30 30 8.0 ± 1.0 Au 1 (mils) TN2130 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain
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TN2130
TN2130
A022009
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VP2106
Abstract: No abstract text available
Text: VP2106 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 30 30 8.0 ± 1.0 Au 1 (mils) VP2106 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain
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VP2106
VP2106
A022009
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MPF 39VF512
Abstract: sst mpf 39vf512 39SF512 39SF010 sst mpf 39vf040 28sf040a 39VF010 39VF512 f0114 39vf020
Text: Die Sales Specifications INTRODUCTION TO UNENCAPSULATED DIE This document provides the user with guidelines for processing, testing, and resolving applications issues associated with purchasing unencapsulated SST flash EEPROM die. Product electrical specifications, functional descriptions, and bonding diagrams are not included. This information is available in the appropriate
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Untitled
Abstract: No abstract text available
Text: Packaging - Handling Gallium Arsenide Die Handling Gallium Arsenide Die Gallium arsenide die have physical properties that require special care in assembly to ensure high yields and good reliability. A few simple precautions in the die mounting and wire bonding
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Untitled
Abstract: No abstract text available
Text: Chip Mounting and Handling of GaAs MMIC Chips CHIP DIE DOWN BONDING TECHNIQUES Die Attach The important considerations for die attach are to have low thermal resistance, strong mechanical bond over the desired temperature range, and no damage occurring to the chip
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Untitled
Abstract: No abstract text available
Text: /= T SGS-THOMSON * 7 # . iMnaoiiLiCTisiMnei_ BUZ11A c h ip N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 156x156 mils METALLIZATION: Top Back Al A u /C r/N i/A u BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION: BONDING PAD SIZE:
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BUZ11A
156x156
C-0071.
19source
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PVAPOX
Abstract: No abstract text available
Text: /=T SGS-THOMSON ^7#» ÄMILtKgTOOMlgi BUZ11A CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 156x156 mils METALLIZATION: Top Back Al A u /C r/N i/A u BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION: BONDING PAD SIZE: Source Gate
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BUZ11A
156x156
MC-0074
PVAPOX
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Untitled
Abstract: No abstract text available
Text: /= T SGS-THOMSON * 71 HD g»I[Lli(gTIS iD(gi IRF520 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: METALLIZATION: Top Back BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION: BONDING PAD SIZE: Source Gate 9 5 x 9 5 mils SCHEMATIC DIAGRAM
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71TMHD
IRF520
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